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Vishay Siliconix SIHW47N60EF-GE3
- Part No.:
- SIHW47N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHW47N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 47A TO247AD
- Quantity:
- Payment:
- Shipping:
Inventory:7,153
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Product details
Overview
SIHW47N60EF-GE3 from Vishay Siliconix is a 600 V, 47 A N-channel enhancement-mode power MOSFET in TO-247AD package, featuring ultra-low gate charge (152–228 nC), fast body diode (trr ≤ 398 ns), and avalanche-rated ruggedness (EAS = 1500 mJ). It delivers low RDS(on) of 0.056 Ω (typ.) at VGS = 10 V and is optimized for high-efficiency LLC resonant and phase-shifted bridge converters in solar inverters and telecom PSUs.
For engineers reviewing the SIHW47N60EF-GE3 datasheet, SIHW47N60EF-GE3 pinout, SIHW47N60EF-GE3 application, or SIHW47N60EF-GE3 equivalent, key selection criteria include its 600 V blocking voltage, 0.065 Ω max RDS(on) at 25 °C, 228 nC max Qg, fast body diode recovery (Qrr ≤ 2.8 μC), and TO-247AD thermal performance (RthJC = 0.33 °C/W).
Technical Context
This EF-series MOSFET employs silicon-based planar vertical DMOS technology with optimized charge balancing to reduce Qrr and trr while maintaining low Ciss (5000 pF typ.) and Co(er) (172 pF). Its gate threshold voltage (2.0–4.0 V) ensures robust noise immunity in high-dV/dt environments up to 70 V/ns.
The device integrates an integral fast-recovery body diode rated for 47 A continuous source-drain current and 138 A pulsed operation, enabling bidirectional conduction in synchronous rectification and ZVS topologies without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports primary-side switching in 400 V DC bus systems with 50 % margin for transient overvoltage |
| RDS(on) max @ 25 °C | 0.065 Ω - enables <1.5 W conduction loss at 24 A, critical for thermally constrained SMPS designs |
| Qg max | 228 nC - reduces gate drive power and allows use of lower-cost drivers in high-frequency (>100 kHz) applications |
| trr max | 398 ns - minimizes reverse recovery losses and EMI in hard-switched and resonant topologies |
| EAS | 1500 mJ - provides single-pulse unclamped inductive switching robustness without snubbers in motor drives |
| RthJC | 0.33 °C/W - enables >300 W dissipation with standard heatsink mounting, supporting high-power density layouts |
| Qrr max | 2.8 μC - lowers diode switching loss and dI/dt stress on gate driver during commutation |
Pinout & Package
SIHW47N60EF-GE3 is housed in a TO-247AD package - a through-hole, isolated-tab, 3-lead power package with 0.33 °C/W junction-to-case thermal resistance and creepage/clearance compliant with IEC 60664-1 for 600 V systems.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; low input capacitance (Ciss = 5000 pF) eases high-speed switching |
| D (Drain) | High-voltage output terminal | Connected to heat sink via isolated tab; handles 600 V blocking and 138 A pulsed drain current |
| S (Source) | Reference node / return path | Serves as common reference for gate drive and current sensing; carries full load current and body diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr ≤ 398 ns and Qrr ≤ 2.8 μC - cuts diode switching loss by >40 % vs. standard MOSFETs in ZVS LLC converters |
| Low FOM (RDS(on) × Qg) | ≤ 14.7 Ω·nC (0.065 Ω × 228 nC) - balances conduction and switching loss for optimal efficiency at 100–300 kHz |
| Avalanche energy rating | EAS = 1500 mJ - eliminates need for external clamping in inductive load switching and fault conditions |
| Ultra-low Qg | 152–228 nC - permits gate drive with <1 W dissipation using 5 V/1 A drivers, reducing BOM cost |
| High dV/dt immunity | 70 V/ns (TJ = 125 °C) - prevents false turn-on in high-noise industrial and solar inverter environments |
Applications
| Telecom Power Supplies | Solar PV Inverters |
|---|---|
Use Scenario: Primary-side switch in 3.5 kW server PSU using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 100–200 kHz with zero-voltage switching. Use Value: Fast body diode enables reliable ZVS transition; low Qg reduces gate drive losses by 35 % vs. legacy 650 V MOSFETs. | Use Scenario: DC-link switching stage in string inverters handling 600–1000 V DC input. IC Role / Device Role / Timing Role: Main switching device in three-level NPC or T-type inverter legs. Use Value: 600 V rating with 50 % safety margin accommodates PV array overvoltage; avalanche rating protects against grid fault transients. |
| LED Street Lighting Drivers | Industrial Battery Chargers |
Use Scenario: Secondary-side synchronous rectifier in 200–400 W constant-current LED drivers. IC Role / Device Role / Timing Role: Low-side switch conducting 47 A continuously with forced-air cooling. Use Value: Low RDS(on) (0.056 Ω typ.) limits conduction loss to <0.6 W; TO-247AD package ensures stable thermal performance over -40 to +125 °C ambient. | Use Scenario: Isolated DC/DC stage in 10 kW EVSE battery charger using dual-active-bridge topology. IC Role / Device Role / Timing Role: High-frequency (150 kHz) bridge leg switch with bidirectional current capability. Use Value: Body diode Qrr ≤ 2.8 μC minimizes reverse recovery loss during soft-commutation; RthJC = 0.33 °C/W supports compact heatsink design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | 600 V, 48 A, RDS(on) = 0.065 Ω, Qg = 120 nC, no avalanche rating | Lacks UIS rating; requires external clamping in inductive switching | Preferred where gate drive power is critical and avalanche stress is absent |
| IXFH44N60P | 600 V, 44 A, RDS(on) = 0.075 Ω, Qg = 170 nC, EAS = 1200 mJ | Higher RDS(on) and lower EAS; slower body diode (trr ≈ 520 ns) | Suitable for lower-frequency (<75 kHz) hard-switched applications with relaxed thermal constraints |
Compared with STW48N60M2 and IXFH44N60P, SIHW47N60EF-GE3 offers superior avalanche ruggedness and faster body diode recovery-critical for ZVS and high-reliability solar and telecom systems-while maintaining competitive conduction and switching loss trade-offs.
Availability
SIHW47N60EF-GE3 is available at Aetrix Electronics and suitable for solar PV inverters, telecom power supplies, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHW47N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The EF Series, including SIHW47N60EF-GE3, was engineered specifically for high-efficiency resonant and soft-switching power converters demanding fast body diodes, low Qg, and robust avalanche capability.
FAQ
What is the maximum continuous drain current rating for SIHW47N60EF-GE3 at 100 °C case temperature?
The SIHW47N60EF-GE3 has a maximum continuous drain current (ID) of 29 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AD package and must be verified against actual board layout, heatsink interface, and ambient conditions in the final design.
Does SIHW47N60EF-GE3 support logic-level gate drive?
No, SIHW47N60EF-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, but it is characterized and optimized for 10 V gate drive. Full enhancement and guaranteed RDS(on) require VGS ≥ 10 V; operation below 8 V risks incomplete turn-on and excessive conduction loss.
What is the body diode forward voltage of SIHW47N60EF-GE3 at 24 A and 25 °C?
The body diode forward voltage (VSD) of SIHW47N60EF-GE3 is 0.9–1.2 V at IS = 24 A, TJ = 25 °C, and VGS = 0 V. This low VSD, combined with fast trr and low Qrr, makes the SIHW47N60EF-GE3 especially effective in synchronous rectification and bidirectional switching applications.
Is SIHW47N60EF-GE3 lead (Pb)-free and halogen-free?
Yes, SIHW47N60EF-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the datasheet. The "-GE3" suffix denotes Vishay's standard green packaging, compliant with RoHS Directive 2011/65/EU and halogen-free standards per IEC 61249-2-21.
Can SIHW47N60EF-GE3 be used in parallel configurations?
Yes, SIHW47N60EF-GE3 supports paralleling due to its positive RDS(on) temperature coefficient (confirmed in Fig. 4: Normalized On-Resistance vs. Temperature). However, careful attention to gate loop inductance, source inductance matching, and individual gate resistor selection is required to ensure current sharing stability across devices.
SIHW47N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 225 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4854 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 379W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
SIHW47N60EF-GE3 FAQ
1.How can I place an order for SIHW47N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHW47N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHW47N60EF-GE3 reliable?
The price and inventory of SIHW47N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHW47N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHW47N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHW47N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHW47N60EF-GE3?
SIHW47N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHW47N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHW47N60EF-GE3?
For technical support, including SIHW47N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHW47N60EF-GE3 requirements.
6.How does Aetrix verify that SIHW47N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHW47N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHW47N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHW47N60EF-GE3?
All SIHW47N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHW47N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHW47N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHW47N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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