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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHW47N60E-GE3

Name: SIHW47N60E-GE3
Brand: Vishay Siliconix
SKU: SIHW47N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHW47N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-3P-3 Full Pack

Datasheet:: SIHW47N60E-GE3.pdf

Description:: MOSFET N-CH 600V 47A TO247AD

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Product details

Overview

SIHW47N60E-GE3 from Vishay Siliconix is a 600 V, 47 A N-channel enhancement-mode Power MOSFET in TO-247AD package, featuring 0.064 Ω R_DS(on) at V_GS = 10 V, 220 nC total gate charge, and 1800 mJ single-pulse avalanche energy - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHW47N60E-GE3 datasheet, SIHW47N60E-GE3 pinout, SIHW47N60E-GE3 application, or SIHW47N60E-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, body diode recovery characteristics, and real-world design context for industrial and renewable energy power conversion systems.

Technical Context

This device employs planar stripe silicon technology with optimized gate oxide and cell pitch to achieve low figure-of-merit (R_DS(on) × Q_g = 14.1 Ω·nC), enabling reduced conduction and switching losses in hard-switched topologies. Its 600 V V_DS rating supports 400 V DC bus applications with margin, and its 150 °C maximum junction temperature enables operation in thermally constrained environments.

The integrated body diode exhibits 696 ns reverse recovery time (t_rr) and 16 μC reverse recovery charge (Q_rr) at T_J = 25 °C, IS = 24 A, dI/dt = 100 A/μs - critical for ZVS-assisted converters and PFC boost stages where diode recovery behavior directly impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC-link designs with 50 % voltage margin for transient overvoltage handling
R_DS(on) max @ 25 °C	0.064 Ω - enables <1.5 W conduction loss at 24 A continuous drain current
Q_g max	220 nC - determines gate driver power requirement and switching speed in 100 kHz–300 kHz SMPS
E_AS	1800 mJ - rated unclamped inductive switching capability without failure under specified test conditions
t_rr & Q_rr	696 ns / 16 μC - defines diode recovery stress on synchronous rectification and boost diode selection
R_thJC	0.33 °C/W - allows 357 W power dissipation with ≤105 °C case-to-ambient ΔT using standard heatsink mounting
I_D cont @ T_C = 100 °C	30 A - derated current limit for sustained operation in high-temperature industrial enclosures

Pinout & Package

SIHW47N60E-GE3 is housed in a TO-247AD package - a through-hole, high-power plastic package with isolated tab (drain-connected), 3-pin layout, and 0.33 °C/W junction-to-case thermal resistance. The package complies with JEDEC TO-247 mechanical standards and supports lead (Pb)-free and halogen-free assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode for channel formation	Accepts 10 V drive for full enhancement; threshold voltage 2.5–3.5 V ensures robust noise immunity
D (Drain)	Main high-voltage power terminal	Connected to internal die backside; electrically tied to metal tab - requires isolation from heatsink unless referenced to same potential
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	14.1 Ω·nC - reduces combined conduction + switching loss in high-frequency PFC and LLC converters
Avalanche-rated operation	1800 mJ E_AS - enables reliable operation in inductive load switching without external snubbers
Fast body diode recovery	t_rr = 696 ns, Q_rr = 16 μC - minimizes commutation loss and voltage overshoot during hard-switched turn-on
High dV/dt immunity	37 V/ns (T_J = 125 °C) - suppresses false turn-on in high-noise bridge-leg configurations
Thermal robustness	R_thJC = 0.33 °C/W - supports >300 W continuous power dissipation with practical heatsinking

Applications

Industrial Motor Drives	Solar PV Inverters
Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 3–10 kW AC induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: High-side and low-side switching element in 6–12 kHz PWM inverter leg, handling bidirectional current and regenerative braking energy. Use Value: 600 V rating accommodates 550 V DC bus with safety margin; 30 A continuous current at 100 °C case supports compact thermal design.	Use Scenario: DC–AC two-stage conversion in string inverters, where the first stage uses a boost converter to regulate MPPT voltage before feeding the H-bridge inverter. IC Role / Device Role / Timing Role: Primary switching device in interleaved boost PFC stage operating at 50–100 kHz. Use Value: Low Q_g (220 nC) and C_iss (4810 pF) reduce gate drive losses; avalanche rating handles inductor saturation faults.
Fluorescent Ballast Lighting	Welding Power Supplies
Use Scenario: Resonant half-bridge driver in electronic ballasts for T5/T8 lamps, operating at 25–60 kHz with soft-start and lamp ignition pulses. IC Role / Device Role / Timing Role: Switching transistor in resonant tank circuit, subjected to high dv/dt and repetitive avalanche stress during lamp strike. Use Value: 37 V/ns dV/dt rating prevents spurious turn-on; 1800 mJ E_AS withstands repeated lamp ignition surges without degradation.	Use Scenario: Primary-side switch in IGBT- or MOSFET-based inverter welders delivering 100–300 A output with rapid duty cycling. IC Role / Device Role / Timing Role: Hard-switched main power switch in 20–50 kHz inverter topology, managing high peak currents and thermal transients. Use Value: 145 A pulsed drain current (I_DM) supports 300 A arc current peaks; 0.33 °C/W R_thJC enables stable thermal response during 60 % duty cycle bursts.

Industrial Motor Drives

Solar PV Inverters

Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 3–10 kW AC induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6–12 kHz PWM inverter leg, handling bidirectional current and regenerative braking energy.

Use Value: 600 V rating accommodates 550 V DC bus with safety margin; 30 A continuous current at 100 °C case supports compact thermal design.

Use Scenario: DC–AC two-stage conversion in string inverters, where the first stage uses a boost converter to regulate MPPT voltage before feeding the H-bridge inverter.

IC Role / Device Role / Timing Role: Primary switching device in interleaved boost PFC stage operating at 50–100 kHz.

Use Value: Low Q_g (220 nC) and C_iss (4810 pF) reduce gate drive losses; avalanche rating handles inductor saturation faults.

Fluorescent Ballast Lighting

Welding Power Supplies

Use Scenario: Resonant half-bridge driver in electronic ballasts for T5/T8 lamps, operating at 25–60 kHz with soft-start and lamp ignition pulses.

IC Role / Device Role / Timing Role: Switching transistor in resonant tank circuit, subjected to high dv/dt and repetitive avalanche stress during lamp strike.

Use Value: 37 V/ns dV/dt rating prevents spurious turn-on; 1800 mJ E_AS withstands repeated lamp ignition surges without degradation.

Use Scenario: Primary-side switch in IGBT- or MOSFET-based inverter welders delivering 100–300 A output with rapid duty cycling.

IC Role / Device Role / Timing Role: Hard-switched main power switch in 20–50 kHz inverter topology, managing high peak currents and thermal transients.

Use Value: 145 A pulsed drain current (I_DM) supports 300 A arc current peaks; 0.33 °C/W R_thJC enables stable thermal response during 60 % duty cycle bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω, Q_g = 150 nC, TO-247 package, 600 V rating	Lower gate charge improves switching efficiency but slightly higher R_DS(on) increases conduction loss at >20 A	Preferred for high-frequency (>150 kHz) PFC where gate drive loss dominates; less suitable for high-current motor drives
IPP60R099C7	650 V, R_DS(on) = 0.099 Ω, Q_g = 72 nC, TO-220FP package, CoolMOS™ superjunction	Higher voltage rating and lower Q_g, but significantly higher R_DS(on) and smaller package limits power handling	Appropriate for space-constrained 1–3 kW SMPS; not recommended for >10 A continuous loads due to thermal limitations

Compared with STW48N60M2 and IPP60R099C7, SIHW47N60E-GE3 offers superior thermal capability (TO-247AD vs. TO-220FP), balanced R_DS(on)/Q_g trade-off for 50–100 kHz industrial converters, and proven avalanche ruggedness for fault-prone lighting and welding applications.

Availability

SIHW47N60E-GE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIHW47N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHW47N60E-GE3 belongs to Vishay's E Series Power MOSFET family - engineered for high-efficiency, high-voltage switching in industrial, renewable energy, and lighting systems demanding ruggedness and consistent parametric performance.

FAQ

What is the maximum continuous drain current for SIHW47N60E-GE3 at 100 °C case temperature?

The SIHW47N60E-GE3 supports 30 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the TO-247AD package and ensures safe operation within the 150 °C maximum junction temperature limit when properly heatsinked.

Does SIHW47N60E-GE3 have an integrated body diode, and what are its key recovery parameters?

Yes, SIHW47N60E-GE3 includes an integral reverse p–n junction body diode. At T_J = 25 °C, IS = 24 A, dI/dt = 100 A/μs, and VR = 25 V, its reverse recovery time (t_rr) is 696 ns and reverse recovery charge (Q_rr) is 16 μC - values critical for designing snubberless PFC and resonant converters.

Is SIHW47N60E-GE3 RoHS-compliant and halogen-free?

Yes, SIHW47N60E-GE3 is both RoHS-compliant per Directive 2011/65/EU and halogen-free per JEDEC JS709A standards, as confirmed in Vishay's Material Category Policy documentation (doc?99912) and ordering information indicating "Lead (Pb)-free and Halogen-free" packaging.

What is the gate threshold voltage range for SIHW47N60E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHW47N60E-GE3 is specified as 2.5–3.5 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin against false triggering in electrically noisy industrial environments.

Can SIHW47N60E-GE3 be used in avalanche mode, and what is its rated energy?

Yes, SIHW47N60E-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 1800 mJ under defined test conditions (V_DD = 50 V, L = 73.5 mH, R_g = 25 Ω, I_AS = 7 A). This rating validates its use in circuits subject to inductive energy dump without external protection.

SIHW47N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-3P-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 357W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

SIHW47N60E-GE3 FAQ

1.How can I place an order for SIHW47N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHW47N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHW47N60E-GE3 reliable?

The price and inventory of SIHW47N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHW47N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHW47N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHW47N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHW47N60E-GE3?

SIHW47N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHW47N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHW47N60E-GE3?

For technical support, including SIHW47N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHW47N60E-GE3 requirements.

6.How does Aetrix verify that SIHW47N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHW47N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHW47N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHW47N60E-GE3?

All SIHW47N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHW47N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHW47N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHW47N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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