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Vishay Siliconix SIHW61N65EF-GE3
- Part No.:
- SIHW61N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHW61N65EF-GE3.pdf
- Description:
- MOSFET N-CH 650V 64A TO247AD
- Quantity:
- Payment:
- Shipping:
Inventory:3,037
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Product details
Overview
SIHW61N65EF-GE3 from Vishay Siliconix is a 650 V, 64 A N-channel enhancement-mode Power MOSFET in TO-247AD package, featuring ultra-low gate charge (Qg max 371 nC), fast body diode (trr typ 212 ns), and low RDS(on) of 0.041 Ω at VGS = 10 V - optimized for high-efficiency LLC resonant and phase-shifted bridge power supplies in telecom and solar inverters.
For engineers reviewing the SIHW61N65EF-GE3 datasheet, SIHW61N65EF-GE3 pinout, SIHW61N65EF-GE3 application, or SIHW61N65EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (1142 mJ), reduced Qrr (2.1–3.8 μC), low Ciss (7407 pF), and thermal resistance RthJC of 0.24 °C/W - critical for high-power density SMPS designs requiring robust hard-switching capability.
Technical Context
This E-series MOSFET employs optimized trench-gate silicon technology to simultaneously reduce conduction loss (RDS(on) = 0.041 Ω) and switching loss via minimized Qg (247 nC typ), Qgd (93 nC), and reverse recovery charge (Qrr). Its fast intrinsic body diode enables reliable operation in ZVS topologies without external SiC diodes.
The device supports high dV/dt immunity (70 V/ns at TJ = 125 °C) and is rated for unclamped inductive switching (UIS) up to 1142 mJ, enabling robustness in hard-switched converters with parasitic inductance. Thermal design is facilitated by low junction-to-case resistance (0.24 °C/W) and TO-247AD's copper-tab construction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC bus with 1.6× safety margin for PV inverter and telecom rectifier applications |
| RDS(on) typ @ 10 V | 0.041 Ω - enables <1.3 W conduction loss at 64 A continuous drain current (TC = 25 °C) |
| Qg max | 371 nC - reduces gate drive power and allows use of lower-cost drivers in high-frequency (>100 kHz) LLC designs |
| trr typ | 212 ns - minimizes diode recovery loss and EMI in phase-shifted full-bridge converters |
| EAS | 1142 mJ - provides single-pulse avalanche ruggedness for overvoltage transients in industrial SMPS |
| RthJC | 0.24 °C/W - enables >500 W dissipation with ≤120 °C case temperature using standard heatsink mounting |
| Ciss | 7407 pF - balances Miller effect suppression and switching speed for stable 3-level inverter operation |
Pinout & Package
SIHW61N65EF-GE3 is housed in a TO-247AD package with isolated tab (drain-connected), standardized for high-voltage power stage mounting and thermal management. The package features 3.51 mm diameter mounting hole and 20.8–21.46 mm length per Vishay drawing 6010.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; low input capacitance (Ciss = 7407 pF) reduces driver loading |
| D (Drain) | High-side power terminal | Connected to internal die backside; electrically tied to metal tab - requires isolation from heatsink |
| S (Source) | Power return and reference node | Serves as local ground for gate drive; low-inductance Kelvin source connection improves switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 212 ns (typ), Qrr = 2.1 μC - eliminates need for parallel SiC diode in ZVS LLC half-bridge |
| Low FOM (RDS(on) × Qg) | 0.041 Ω × 247 nC = 10.1 nΩ·F - benchmark efficiency for 650 V MOSFETs in 100–300 kHz SMPS |
| Avalanche energy rating | EAS = 1142 mJ - withstands repetitive line surges and transformer leakage spikes without derating |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912 |
| High dV/dt immunity | 70 V/ns at TJ = 125 °C - ensures noise-immune operation in high-di/dt motor drive and welding inverters |
Applications
| Telecom Server PSU | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier with phase-shifted full-bridge topology operating at 100–150 kHz. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus and 64 A peak current; body diode conducts during ZVS dead-time. Use Value: Low Qrr (2.1 μC) and fast trr (212 ns) reduce turn-on loss by >35% vs. standard 650 V MOSFETs, improving system efficiency to >96.2%. |
Use Scenario: DC-link switching in string-level 5 kW solar inverter using three-level NPC topology with 1000 V DC input. IC Role / Device Role / Timing Role: Upper-leg switch in T-type inverter leg; blocks 650 V while conducting bidirectional current during modulation. Use Value: Avalanche rating (1142 mJ) absorbs voltage overshoot from IGBT-like switching transitions, eliminating snubber circuits and reducing BOM cost. |
| Industrial Welding Inverter | HID Lighting Ballast |
Use Scenario: Output H-bridge switch in 12 kW IGBT-replacement arc welding inverter operating at 20–50 kHz with high di/dt. IC Role / Device Role / Timing Role: Main power switch subjected to 500 A/μs di/dt and repetitive 199 A pulsed drain current (IDM). Use Value: 70 V/ns dV/dt rating and 0.24 °C/W RthJC enable stable operation without oscillation or thermal runaway under extreme load transients. |
Use Scenario: Resonant half-bridge switch in 400 W electronic ballast for 150 V HID lamp ignition and regulation. IC Role / Device Role / Timing Role: High-frequency switching device driving LCC resonant tank; body diode sustains lamp current during zero-crossing. Use Value: Low VSD (0.9 V typ) and fast reverse recovery minimize conduction loss during lamp warm-up, extending electrode life by >20%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N65M5 | 650 V, 62 A, RDS(on) = 0.042 Ω, Qg = 125 nC (lower), trr = 280 ns (slower) | Optimized for lower gate drive power but higher diode loss in ZVS; less suitable for high-di/dt welding | Prefer when gate drive budget is constrained and diode recovery is less critical |
| IXFH60N65X2 | 650 V, 60 A, RDS(on) = 0.044 Ω, Qg = 210 nC, Qrr = 1.7 μC (lower), no UIS rating | Lacks avalanche energy rating; requires external clamping in inductive loads | Select only in well-clamped topologies where transient overvoltage is actively suppressed |
Compared with STW62N65M5 and IXFH60N65X2, SIHW61N65EF-GE3 delivers superior balance of low Qrr, high UIS, and high dV/dt immunity - making it the preferred choice for unclamped, high-di/dt industrial and renewable energy inverters where reliability under stress is non-negotiable.
Availability
SIHW61N65EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial welding equipment requiring stable component supply across multi-year production cycles.
Supply support for SIHW61N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.
The E Series Power MOSFET product line was engineered specifically for high-efficiency, high-reliability switched-mode power supplies - emphasizing fast body diode performance, low FOM, and rugged avalanche capability in 600–900 V voltage classes.
FAQ
What is the maximum continuous drain current rating for SIHW61N65EF-GE3 at TC = 100 °C?
The SIHW61N65EF-GE3 has a continuous drain current rating of 41 A at case temperature (TC) = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AD package and ensures safe operation within its 0.24 °C/W junction-to-case thermal resistance. At TC = 25 °C, the rating increases to 64 A.
Does SIHW61N65EF-GE3 have a fully rated avalanche capability, and what is the test condition?
Yes, SIHW61N65EF-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with EAS = 1142 mJ. Per the datasheet, this is measured at VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 9 A. The device is designed for robustness in hard-switched topologies where voltage transients occur.
What is the typical reverse recovery time (trr) of the body diode in SIHW61N65EF-GE3, and under what conditions is it measured?
The typical reverse recovery time (trr) of the body diode in SIHW61N65EF-GE3 is 212 ns, measured at TJ = 25 °C, IF = IS = 30.5 A, dI/dt = 100 A/μs, and VR = 400 V. This fast recovery enables efficient ZVS operation in LLC and phase-shifted bridge converters without external diode supplementation.
Is SIHW61N65EF-GE3 compatible with standard TO-247 heatsink mounting hardware?
Yes, SIHW61N65EF-GE3 uses the industry-standard TO-247AD package with a 3.51–3.66 mm diameter mounting hole and 20.8–21.46 mm length, fully compatible with common TO-247 heatsink clips and screw mounts. Note that the metal tab is internally connected to the drain, so electrical isolation (e.g., mica washer or silicone pad) is mandatory between tab and heatsink.
What gate voltage range is recommended for reliable operation of SIHW61N65EF-GE3?
The SIHW61N65EF-GE3 is specified for gate-source voltage (VGS) from ±30 V maximum, with optimal on-state performance achieved at VGS = 10 V. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and gate leakage remains below ±100 nA at ±20 V - supporting robust drive with standard 12 V gate drivers and ensuring noise immunity in noisy industrial environments.
SIHW61N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 47mOhm @ 30.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 371 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7407 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
SIHW61N65EF-GE3 FAQ
1.How can I place an order for SIHW61N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHW61N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHW61N65EF-GE3 reliable?
The price and inventory of SIHW61N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHW61N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHW61N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHW61N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHW61N65EF-GE3?
SIHW61N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHW61N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHW61N65EF-GE3?
For technical support, including SIHW61N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHW61N65EF-GE3 requirements.
6.How does Aetrix verify that SIHW61N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHW61N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHW61N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHW61N65EF-GE3?
All SIHW61N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHW61N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHW61N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHW61N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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