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Vishay Siliconix SIHW70N60EF-GE3
- Part No.:
- SIHW70N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHW70N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 70A TO247AD
- Quantity:
- Payment:
- Shipping:
Inventory:4,562
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Product details
Overview
SIHW70N60EF-GE3 from Vishay Siliconix is a 600 V, 70 A N-channel enhancement-mode power MOSFET in TO-247AD package, featuring ultra-low gate charge (Qg max 380 nC), fast body diode (trr typ 213 ns), and avalanche-rated ruggedness (EAS 1706 mJ). It is engineered for high-efficiency LLC resonant and phase-shifted bridge topologies in telecom and solar inverters.
For engineers reviewing the SIHW70N60EF-GE3 datasheet, SIHW70N60EF-GE3 pinout, SIHW70N60EF-GE3 application, or SIHW70N60EF-GE3 equivalent, key selection criteria include RDS(on) at 10 V (0.033 Ω typ), dV/dt immunity (70 V/ns), reverse recovery performance (Qrr 1.6–3.2 μC), and thermal resistance (RthJC 0.24 °C/W).
Technical Context
This MOSFET employs Vishay's EF-series fast-body-diode technology to reduce reverse recovery charge and improve ZVS capability in soft-switching converters. Its low Ciss (7500 pF typ) and optimized Crss/Coss ratio support stable high-frequency operation up to 500 kHz in resonant topologies.
The device integrates an integral body diode rated for 70 A continuous source-drain current and 229 A pulsed current, with controlled dI/dt (750 A/μs) and reverse dV/dt (50 V/ns) behavior-critical for minimizing voltage overshoot in bridge-leg commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PV inverters and telecom rectifiers |
| RDS(on) typ @ 10 V | 0.033 Ω - enables <1.2 W conduction loss at 60 A, reducing heatsink requirements in high-power SMPS |
| Qg max | 380 nC - lowers gate drive power and allows use of smaller, cost-effective drivers in 100–300 kHz applications |
| trr typ | 213 ns - minimizes dead-time losses and improves efficiency in phase-shifted full-bridge and LLC converters |
| EAS | 1706 mJ - ensures single-pulse unclamped inductive switching robustness without external snubbers in welder and charger designs |
| RthJC | 0.24 °C/W - enables direct mounting to cold plates for >500 W continuous output in industrial power modules |
| dV/dt rating | 70 V/ns - suppresses false turn-on during high dv/dt commutation in multi-level inverters and motor drives |
Pinout & Package
SIHW70N60EF-GE3 is housed in a TO-247AD package with isolated tab (drain-connected), standard three-terminal layout, and Pb-free/halogen-free construction per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 10 V logic-level drive; low input capacitance (Ciss = 7500 pF) reduces driver loading |
| D | Drain | Main high-side power terminal; electrically connected to metal tab for low-inductance heat sinking and EMI control |
| S | Source | Power return and reference node for gate drive; used as common connection point for current sensing and feedback |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 213 ns (typ) and Qrr = 1.6 μC (typ) enable reliable ZVS in LLC and PSFB topologies without external diodes |
| Low FOM (RDS(on) × Qg) | 12.5 Ω·nC - balances switching and conduction losses for optimal efficiency across 100–500 kHz operating range |
| Avalanche energy rating | EAS = 1706 mJ - eliminates need for external clamping circuits in inductive load switching (e.g., welding, battery charging) |
| High dV/dt immunity | 70 V/ns at TJ = 125 °C - prevents spurious turn-on during fast voltage transients in multi-kW bridge configurations |
| Thermal robustness | RthJC = 0.24 °C/W and TJ max = +150 °C - supports sustained 70 A operation with active cooling in compact industrial enclosures |
Applications
| Telecom Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: High-density 3 kW server rectifier using interleaved PFC + LLC resonant DC/DC stage. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in LLC half-bridge power stage, operating at 250 kHz with zero-voltage switching. Use Value: Low Qrr and fast trr minimize body-diode conduction loss during dead time, improving full-load efficiency by 0.8 % vs. standard superjunction MOSFETs. |
Use Scenario: 5 kW string inverter with three-level NPC topology handling 1000 V DC input and grid-synchronized AC output. IC Role / Device Role / Timing Role: Upper-leg switching device in NPC leg, requiring high dV/dt immunity and bidirectional conduction capability. Use Value: 70 V/ns dV/dt rating and 50 V/ns reverse diode dV/dt prevent false triggering during bus voltage transitions, enabling stable 16 kHz modulation. |
| Industrial Battery Charger | HID Lighting Ballast |
Use Scenario: 10 kW lithium-ion battery charger with phase-shifted full-bridge (PSFB) isolation stage and adaptive ZVS control. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement via active clamp forward topology, leveraging body diode conduction during freewheeling. Use Value: Low VSD (0.9 V typ at 35 A) and high ISM (229 A pulsed) reduce conduction loss and support peak-current surge during constant-current charging phases. |
Use Scenario: 400 W electronic ballast for high-intensity discharge lamps, employing resonant ignition and regulated arc current control. IC Role / Device Role / Timing Role: Resonant tank switch in series-resonant half-bridge, cycling at 250–500 kHz during lamp warm-up and steady-state operation. Use Value: Ultra-low Coss (378 pF) and Co(tr) (926 pF) ensure precise timing control of resonant frequency shift, enabling reliable hot restrike within 100 ms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW70N60DM6 | Higher RDS(on) (0.036 Ω typ), lower Qg (320 nC), no specified EAS rating | Lacks avalanche energy spec; requires external clamping in inductive switching | Preferred where gate drive power is critical and avalanche stress is absent |
| IXFH70N60X3 | Lower Qrr (1.1 μC typ), higher VDS tempco (+0.75 V/°C), same package | Better reverse recovery but reduced breakdown voltage stability over temperature | Selected when trr/Qrr optimization outweighs VDS drift concerns in tightly regulated systems |
Compared with STW70N60DM6 and IXFH70N60X3, SIHW70N60EF-GE3 uniquely combines certified avalanche ruggedness, industry-leading Qrr/trr balance, and verified dV/dt immunity-making it the preferred choice for unclamped inductive loads and high-reliability telecom infrastructure.
Availability
SIHW70N60EF-GE3 is available at Aetrix Electronics and suitable for telecom rectifiers, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHW70N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power conversion and signal conditioning.
The EF Series, including SIHW70N60EF-GE3, was developed specifically for high-frequency soft-switching topologies-emphasizing fast body diode performance, low gate charge, and rugged avalanche operation in renewable energy and data center power systems.
FAQ
What is the maximum continuous drain current rating for SIHW70N60EF-GE3 at 100 °C case temperature?
The SIHW70N60EF-GE3 supports 45 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and must be validated against actual board layout, airflow, and ambient temperature in the final design. The SIHW70N60EF-GE3 maintains safe operation up to TJ = 150 °C with appropriate thermal management.
Does SIHW70N60EF-GE3 have a fully characterized body diode for synchronous rectification use?
Yes, SIHW70N60EF-GE3 includes a fully specified integral body diode with IS = 70 A continuous, ISM = 229 A pulsed, VSD = 0.9–1.2 V at 35 A, and trr = 213–426 ns. These parameters are measured under standardized conditions (TJ = 25 °C, IF = 35 A, dI/dt = 100 A/μs, VR = 400 V), making the SIHW70N60EF-GE3 suitable for body-diode-assisted or quasi-synchronous operation in LLC and PSFB topologies.
Is SIHW70N60EF-GE3 RoHS-compliant and halogen-free?
Yes, SIHW70N60EF-GE3 is lead (Pb)-free and halogen-free, conforming to RoHS Directive 2011/65/EU and Vishay's material categorization standards (see doc?99912). The "-GE3" suffix explicitly denotes green, Pb-free, and halogen-free packaging per JEDEC J-STD-020 moisture sensitivity level 1 requirements.
What is the typical gate-to-source threshold voltage range for SIHW70N60EF-GE3?
The SIHW70N60EF-GE3 has a VGS(th) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity. This threshold range remains stable across temperature, supporting consistent switching behavior in industrial environments where junction temperatures may reach 125 °C.
Can SIHW70N60EF-GE3 be used in hard-switched applications above 100 kHz?
While SIHW70N60EF-GE3 is optimized for soft-switching topologies, it can operate in hard-switched applications up to ~150 kHz with careful attention to gate drive strength, layout parasitics, and snubber design. Its low Qg (253 nC typ) and moderate Coss (378 pF) help limit switching loss, but hard-switched use above 100 kHz increases risk of voltage overshoot and thermal stress-validation with the SIHW70N60EF-GE3 in the target circuit is essential.
SIHW70N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 380 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7500 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
SIHW70N60EF-GE3 FAQ
1.How can I place an order for SIHW70N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHW70N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHW70N60EF-GE3 reliable?
The price and inventory of SIHW70N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHW70N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHW70N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHW70N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHW70N60EF-GE3?
SIHW70N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHW70N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHW70N60EF-GE3?
For technical support, including SIHW70N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHW70N60EF-GE3 requirements.
6.How does Aetrix verify that SIHW70N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHW70N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHW70N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHW70N60EF-GE3?
All SIHW70N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHW70N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHW70N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHW70N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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