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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHW73N60E-GE3

Name: SIHW73N60E-GE3
Brand: Vishay Siliconix
SKU: SIHW73N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHW73N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHW73N60E-GE3.pdf

Description:: MOSFET N-CH 600V 73A TO247AD

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Product details

Overview

SIHW73N60E-GE3 from Vishay Siliconix is a 600 V, 73 A N-channel enhancement-mode Power MOSFET in TO-247AD package, optimized for high-efficiency switch-mode power supplies and PFC stages with R_DS(on) = 0.039 Ω @ 10 V, Q_g = 362 nC, and avalanche-rated E_AS = 2030 mJ. It delivers low conduction and switching losses in industrial motor drives and solar PV inverters.

For engineers reviewing the SIHW73N60E-GE3 datasheet, SIHW73N60E-GE3 pinout, SIHW73N60E-GE3 application, or SIHW73N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, ultra-low gate charge, robust UIS capability, thermal resistance of 0.24 °C/W (junction-to-case), and lead-free/halogen-free compliance per JEDEC JS709A.

Technical Context

This device employs planar stripe silicon technology with optimized cell pitch and gate oxide design to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of ~14.1 Ω·nC. Its C_iss = 7700 pF and C_oss = 320 pF support fast, controlled switching at high bus voltages up to 480 V.

The integral body diode features t_rr = 657–1314 ns and Q_rr = 14.6–29.2 μC under specified conditions, enabling reliable operation in hard-switched topologies. The MOSFET is rated for repetitive dV/dt up to 60 V/ns and reverse diode dV/dt up to 8.4 V/ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified rails with 50 % margin in PFC and SMPS designs
R_DS(on) max	0.039 Ω @ V_GS = 10 V - enables <1.4 W conduction loss at 60 A, critical for thermal management in high-current converters
Q_g max	362 nC - determines gate driver power requirement and switching speed; impacts turn-on/turn-off delay and rise/fall times
E_AS	2030 mJ - specifies single-pulse unclamped inductive switching ruggedness, essential for reliability in motor drive fault conditions
R_thJC	0.24 °C/W - allows direct heatsink mounting with predictable junction temperature rise under 520 W dissipation
I_D continuous	73 A @ T_C = 25 °C - defines maximum DC current handling when case is actively cooled to 25 °C
V_GS(th)	2–4 V - ensures clean turn-on with standard 10 V gate drivers while avoiding spurious conduction near 0 V

Pinout & Package

SIHW73N60E-GE3 is housed in a TO-247AD package with isolated tab (drain-connected), offering high-power thermal performance and mechanical robustness for industrial applications. The package complies with RoHS and JEDEC JS709A halogen-free standards.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel formation; requires 10 V drive for full enhancement; Q_g = 362 nC dictates driver sizing
D	Drain	High-side switching node; connected to heatsink tab; withstands 600 V blocking and 236 A pulsed current
S	Source	Power return path and reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	~14.1 Ω·nC - reduces total switching + conduction loss, improving efficiency in 50–100 kHz PFC and inverter stages
Avalanche energy rating (E_AS)	2030 mJ - enables operation without external snubbers in inductive load switching, enhancing system ruggedness
Ultra-low gate charge (Q_g)	362 nC - lowers gate driver power consumption and enables use of cost-effective 1-A peak drivers
Low input capacitance (C_iss)	7700 pF - minimizes Miller effect and improves voltage transient immunity during commutation
Body diode Q_rr	14.6–29.2 μC - balances reverse recovery loss and EMI; suitable for non-synchronous rectification in flyback/PFC

Applications

Industrial Motor Drives	Solar PV Inverters
Use Scenario: Three-phase IGBT/MOSFET inverter stage converting DC from PV array to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side main switching device in 600 V DC-link half-bridge configuration, operating at 16–20 kHz. Use Value: 600 V V_DS and 2030 mJ E_AS ensure safe operation during grid faults and line transients; R_DS(on) = 0.039 Ω limits conduction loss at 50 A RMS output.	Use Scenario: Boost-stage switch in string-level PV inverter with 500–600 V DC input. IC Role / Device Role / Timing Role: Unidirectional power switch in continuous conduction mode (CCM) boost converter. Use Value: Low Q_g (362 nC) and C_iss (7700 pF) reduce switching loss at 30–50 kHz, directly improving inverter efficiency above 98 %.
Server/Telecom SMPS	Induction Heating Systems
Use Scenario: Primary-side switch in 3 kW telecom rectifier with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: Critical conduction mode (CrM) PFC switch handling 73 A peak current at 100 kHz. Use Value: 73 A continuous rating at T_C = 25 °C and R_thJC = 0.24 °C/W allow compact heatsinking; low V_SD = 0.9–1.2 V reduces body diode loss during zero-voltage switching transitions.	Use Scenario: Half-bridge switch in 20–50 kHz resonant tank for domestic induction cooktops. IC Role / Device Role / Timing Role: Hard-switched power switch subjected to high dI/dt and repetitive UIS stress. Use Value: Rated dV/dt = 60 V/ns and avalanche energy of 2030 mJ prevent failure during rapid load changes and coil detuning events.

Industrial Motor Drives

Solar PV Inverters

Use Scenario: Three-phase IGBT/MOSFET inverter stage converting DC from PV array to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side main switching device in 600 V DC-link half-bridge configuration, operating at 16–20 kHz.

Use Value: 600 V V_DS and 2030 mJ E_AS ensure safe operation during grid faults and line transients; R_DS(on) = 0.039 Ω limits conduction loss at 50 A RMS output.

Use Scenario: Boost-stage switch in string-level PV inverter with 500–600 V DC input.

IC Role / Device Role / Timing Role: Unidirectional power switch in continuous conduction mode (CCM) boost converter.

Use Value: Low Q_g (362 nC) and C_iss (7700 pF) reduce switching loss at 30–50 kHz, directly improving inverter efficiency above 98 %.

Server/Telecom SMPS

Induction Heating Systems

Use Scenario: Primary-side switch in 3 kW telecom rectifier with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Critical conduction mode (CrM) PFC switch handling 73 A peak current at 100 kHz.

Use Value: 73 A continuous rating at T_C = 25 °C and R_thJC = 0.24 °C/W allow compact heatsinking; low V_SD = 0.9–1.2 V reduces body diode loss during zero-voltage switching transitions.

Use Scenario: Half-bridge switch in 20–50 kHz resonant tank for domestic induction cooktops.

IC Role / Device Role / Timing Role: Hard-switched power switch subjected to high dI/dt and repetitive UIS stress.

Use Value: Rated dV/dt = 60 V/ns and avalanche energy of 2030 mJ prevent failure during rapid load changes and coil detuning events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW73N60M2	R_DS(on) = 0.033 Ω @ 10 V; Q_g = 220 nC; TO-247 long leads; lower gate charge but higher price	Better switching efficiency at >50 kHz; less suited for high-current linear-mode operation due to lower SOA	Prefer STW73N60M2 where gate drive loss dominates and layout allows tighter thermal coupling
IXFH73N60P	R_DS(on) = 0.036 Ω @ 10 V; Q_g = 310 nC; enhanced ruggedness; same TO-247AD package	Higher E_AS = 2300 mJ and improved dv/dt immunity; validated for welding equipment	Choose IXFH73N60P for mission-critical industrial systems requiring extended UIS margin beyond 2030 mJ

Compared with STW73N60M2 and IXFH73N60P, SIHW73N60E-GE3 offers balanced conduction-switching trade-off with industry-leading FOM and verified halogen-free compliance, making it optimal for cost-sensitive, high-volume PFC and inverter designs where thermal and avalanche margins are well-defined.

Availability

SIHW73N60E-GE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHW73N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHW73N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage power conversion in PFC, SMPS, and renewable energy systems where low FOM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHW73N60E-GE3 at 100 °C case temperature?

The SIHW73N60E-GE3 has a continuous drain current rating of 46 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AD package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 0.24 °C/W and actual power dissipation to ensure T_J ≤ 150 °C.

Does SIHW73N60E-GE3 support logic-level gate drive?

No, SIHW73N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but it requires V_GS = 10 V to achieve R_DS(on) = 0.039 Ω. Driving SIHW73N60E-GE3 with only 5 V may result in incomplete enhancement and excessive conduction loss. A dedicated 10–15 V gate driver is recommended for reliable operation.

What is the significance of the "-GE3" suffix in SIHW73N60E-GE3?

The "-GE3" suffix indicates that SIHW73N60E-GE3 is a lead (Pb)-free and halogen-free version compliant with JEDEC JS709A standards. It uses matte tin plating on the leads and meets Vishay's material categorization requirements for environmentally conscious manufacturing, without compromising electrical or thermal performance versus leaded variants.

Can SIHW73N60E-GE3 replace older Vishay 600 V MOSFETs like SIHP22N60E?

SIHW73N60E-GE3 is not a direct replacement for SIHP22N60E due to significant differences: SIHW73N60E-GE3 delivers 73 A vs. 22 A, has lower R_DS(on) (0.039 Ω vs. 0.22 Ω), and higher Q_g (362 nC vs. 52 nC). PCB layout, gate driver sizing, and thermal design must be re-evaluated. It is functionally compatible only in applications where higher current and lower on-resistance are acceptable and supported by system-level redesign.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHW73N60E-GE3?

The body diode of SIHW73N60E-GE3 has a reverse recovery charge Q_rr of 14.6–29.2 μC, measured at T_J = 25 °C, I_F = 24 A, dI/dt = 100 A/μs, and V_R = 25 V. This value directly impacts commutation loss and EMI in hard-switched topologies; designers should account for it in snubber design and efficiency calculations for the SIHW73N60E-GE3.

SIHW73N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 362 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

SIHW73N60E-GE3 FAQ

1.How can I place an order for SIHW73N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHW73N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHW73N60E-GE3 reliable?

The price and inventory of SIHW73N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHW73N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHW73N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHW73N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHW73N60E-GE3?

SIHW73N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHW73N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHW73N60E-GE3?

For technical support, including SIHW73N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHW73N60E-GE3 requirements.

6.How does Aetrix verify that SIHW73N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHW73N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHW73N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHW73N60E-GE3?

All SIHW73N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHW73N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHW73N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHW73N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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