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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ128LDP-T1-GE3

Name: SIJ128LDP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ128LDP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ128LDP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ128LDP-T1-GE3.pdf

Description:: MOSFET N-CH 80V 10.2A/25.5A PPAK

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Product details

Overview

SIJ128LDP-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering R_DS(on) = 0.0156 Ω at V_GS = 10 V and 0.0203 Ω at V_GS = 4.5 V, with 9.5 nC typical total gate charge and 25.5 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC conversion.

For engineers reviewing the SIJ128LDP-T1-GE3 datasheet, SIJ128LDP-T1-GE3 pinout, SIJ128LDP-T1-GE3 application, or SIJ128LDP-T1-GE3 equivalent, key selection criteria include its low Q_gd/Q_gs ratio (<1), 100% R_g and UIS testing, flexible lead design for mechanical stress resilience, and verified performance in boost converters and LED backlighting circuits.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to minimize conduction and switching losses, with a Q_gd/Q_gs ratio below 1 that improves hard-switching robustness and reduces voltage overshoot during turn-off. Its gate charge profile (Q_g = 9.5 nC typ. at V_GS = 4.5 V) enables efficient operation in high-frequency DC/DC topologies.

The device features a thermally enhanced PowerPAK® SO-8L leadless package with exposed copper drain pad, achieving R_thJC = 4.5 °C/W (typ.) and supporting high-power density layouts. Body diode characteristics - including t_rr = 30 ns (typ.), Q_rr = 26 nC (typ.), and V_SD = 0.77 V (typ. at I_S = 5 A) - are specified for synchronous rectifier duty cycles and reverse recovery management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports input rails up to 60 V DC/DC and 400 V DC-link in inverter half-bridges with margin
R_DS(on) max @ 10 V	0.0156 Ω - enables ≤1.6 W conduction loss at 10 A, critical for thermal management in compact converters
R_DS(on) max @ 4.5 V	0.0203 Ω - ensures stable on-state performance with 5 V gate drivers and logic-level control
Q_g typ.	9.5 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in >500 kHz designs
I_D cont. @ T_C = 25 °C	25.5 A - supports high-current output stages in server VRMs and telecom power supplies
Q_gd/Q_gs ratio	< 1 - suppresses Miller-induced shoot-through and improves EMI behavior in hard-switched topologies
R_thJC max	5.6 °C/W - enables direct heatsinking via PCB copper or external thermal pads for >15 W dissipation

Pinout & Package

SIJ128LDP-T1-GE3 uses the PowerPAK® SO-8L single-die leadless package (5.13 mm × 6.15 mm footprint), with exposed copper drain pad on bottom side for thermal conduction and three source terminals (pins 1, 2, 3), one gate (pin 4), and drain connected to the bottom thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Three parallel source connections reduce source inductance and improve current sharing in high-di/dt applications
4 (G)	Gate	Single gate input with R_g = 0.87 Ω (typ.) - compatible with standard 5–12 V gate drivers without external series resistance
Bottom Pad (D)	Drain	Exposed copper drain terminal - requires solder mask defined thermal pad (4.061 mm × 3.630 mm min.) for optimal thermal transfer

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 20 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation - directly improves converter efficiency at 300–1000 kHz
Flexible leads	Accommodates ±0.15 mm PCB warpage and thermal cycling without solder joint fatigue - validated for automotive under-hood environments
100 % R_g and UIS tested	Guarantees gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress
Q_gd/Q_gs < 1	Reduces risk of false turn-on during high dv/dt commutation - eliminates need for negative gate drive in critical half-bridge nodes
Lead (Pb)-free and halogen-free	Meets RoHS 2011/65/EU and JEDEC JS709C - suitable for consumer, industrial, and medical end equipment without exemption requests

Applications

Synchronous Rectification	High Power Density DC/DC
Use Scenario: Secondary-side switching in isolated 48 V–12 V LLC resonant converters for AI accelerators and data center PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve full-load efficiency by ≥1.2 %. Use Value: R_DS(on) = 0.0203 Ω at 4.5 V gate drive enables direct control from LLC controller's SR output, eliminating auxiliary bias winding.	Use Scenario: High-current POL (point-of-load) buck converter supplying GPU core voltage in edge computing modules. IC Role / Device Role / Timing Role: High-side switch operating at 600 kHz with 30 A peak current and <10 ns dead-time requirements. Use Value: 9.5 nC Q_g and low Q_gd allow clean turn-on/turn-off edges without gate ringing, reducing EMI filter size by 30 %.
DC/AC Inverters	LED Backlighting
Use Scenario: Half-bridge leg in 1–3 kW solar microinverters interfacing string voltages up to 600 V DC. IC Role / Device Role / Timing Role: Low-side switch in unidirectional H-bridge topology handling 15 A RMS output current with 100 kHz PWM. Use Value: 15 A I_AS rating and 11.25 mJ E_AS withstand capability ensure reliability during grid fault transients and line surges.	Use Scenario: Boost-stage switch in automotive LCD instrument cluster backlight driver powering 12–24 white LEDs in series. IC Role / Device Role / Timing Role: Main energy-transfer switch in constant-current boost converter operating at 1.2 MHz with 2 A output. Use Value: 0.0156 Ω R_DS(on) limits thermal rise to <15 °C above ambient at 2 A, enabling ultra-thin 0.8 mm PCB construction.

Synchronous Rectification

High Power Density DC/DC

Use Scenario: Secondary-side switching in isolated 48 V–12 V LLC resonant converters for AI accelerators and data center PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve full-load efficiency by ≥1.2 %.

Use Value: R_DS(on) = 0.0203 Ω at 4.5 V gate drive enables direct control from LLC controller's SR output, eliminating auxiliary bias winding.

Use Scenario: High-current POL (point-of-load) buck converter supplying GPU core voltage in edge computing modules.

IC Role / Device Role / Timing Role: High-side switch operating at 600 kHz with 30 A peak current and <10 ns dead-time requirements.

Use Value: 9.5 nC Q_g and low Q_gd allow clean turn-on/turn-off edges without gate ringing, reducing EMI filter size by 30 %.

DC/AC Inverters

LED Backlighting

Use Scenario: Half-bridge leg in 1–3 kW solar microinverters interfacing string voltages up to 600 V DC.

IC Role / Device Role / Timing Role: Low-side switch in unidirectional H-bridge topology handling 15 A RMS output current with 100 kHz PWM.

Use Value: 15 A I_AS rating and 11.25 mJ E_AS withstand capability ensure reliability during grid fault transients and line surges.

Use Scenario: Boost-stage switch in automotive LCD instrument cluster backlight driver powering 12–24 white LEDs in series.

IC Role / Device Role / Timing Role: Main energy-transfer switch in constant-current boost converter operating at 1.2 MHz with 2 A output.

Use Value: 0.0156 Ω R_DS(on) limits thermal rise to <15 °C above ambient at 2 A, enabling ultra-thin 0.8 mm PCB construction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.022 Ω @ 10 V; Q_g = 12.5 nC; TO-252 package; higher R_thJA (62 °C/W)	Larger footprint and inferior thermal performance - requires larger heatsink area for same power level	Choose only if TO-252 layout compatibility is mandatory and board space permits 3× larger thermal pad
DMN6016LFG-7	R_DS(on) = 0.0165 Ω @ 10 V; Q_g = 11.2 nC; PowerDI 5060 package; no flexible leads	Higher gate charge increases driver loss; lacks mechanical stress resilience for vibration-prone environments	Select when cost sensitivity outweighs mechanical robustness and gate drive efficiency requirements

Compared with IRF7470PBF and DMN6016LFG-7, SIJ128LDP-T1-GE3 delivers superior R_DS(on) × Q_g figure-of-merit, verified flexible-lead reliability, and lowest junction-to-case thermal resistance - making it optimal for space-constrained, high-reliability, high-frequency power stages.

Availability

SIJ128LDP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high power density DC/DC, and LED backlighting applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for SIJ128LDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across industrial, automotive, and computing markets.

The SIJ128LDP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8L family, engineered specifically for high-frequency, high-current switching in space-constrained power supplies where low Q_g, low R_DS(on), and mechanical robustness are critical.

FAQ

What is the maximum continuous drain current rating for SIJ128LDP-T1-GE3 at case temperature 70 °C?

The SIJ128LDP-T1-GE3 has a maximum continuous drain current of 20.4 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal constraints and assumes proper PCB copper area and airflow per Vishay's recommended layout guidelines. The SIJ128LDP-T1-GE3 maintains stable R_DS(on) performance across this range, supporting reliable operation in thermally demanding environments such as enclosed power modules.

Does SIJ128LDP-T1-GE3 support 4.5 V gate drive for full enhancement?

Yes, SIJ128LDP-T1-GE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) max = 0.0203 Ω and guaranteed turn-on behavior down to V_GS(th) = 1.0 V (min). Its low threshold voltage and strong transconductance (g_fs = 30 S typ.) ensure robust enhancement using standard 5 V logic or microcontroller GPIO outputs - making SIJ128LDP-T1-GE3 suitable for battery-powered and low-voltage control systems.

What is the body diode reverse recovery time (t_rr) of SIJ128LDP-T1-GE3, and how does it impact synchronous rectifier performance?

The SIJ128LDP-T1-GE3 has a typical body diode reverse recovery time t_rr of 30 ns (measured at I_F = 10 A, di/dt = 100 A/μs, T_J = 25 °C). This fast recovery minimizes reverse recovery loss and associated voltage spikes during freewheeling transitions, directly improving efficiency and EMI in synchronous rectifier configurations - especially critical in high-frequency LLC and ZVS topologies where SIJ128LDP-T1-GE3 is commonly deployed.

Is SIJ128LDP-T1-GE3 qualified for automotive applications?

SIJ128LDP-T1-GE3 is not AEC-Q101 qualified per its official Vishay documentation. While it meets industrial temperature range (–55 °C to +150 °C) and includes 100 % UIS testing, it lacks formal automotive qualification and stress test reporting. For automotive-grade alternatives, engineers should consult Vishay's AEC-Q101-certified PowerPAK SO-8L portfolio - SIJ128LDP-T1-GE3 remains appropriate for industrial, computing, and consumer power applications where AEC-Q101 is not mandated.

How does the flexible lead design of SIJ128LDP-T1-GE3 improve mechanical reliability?

The flexible leads on SIJ128LDP-T1-GE3 absorb PCB flexure and thermal expansion mismatch between the MOSFET and FR4 substrate, reducing solder joint stress during temperature cycling and mechanical shock. This design feature - confirmed in Vishay's reliability testing - extends field life in applications subject to vibration (e.g., motor drives, transportation electronics) and eliminates cracking failures observed with rigid-lead packages. SIJ128LDP-T1-GE3's flexible leads are integral to its qualification for harsh-environment industrial deployments.

SIJ128LDP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 10.2A (Ta), 25.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 22.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ128LDP-T1-GE3 FAQ

1.How can I place an order for SIJ128LDP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ128LDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ128LDP-T1-GE3 reliable?

The price and inventory of SIJ128LDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ128LDP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ128LDP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ128LDP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ128LDP-T1-GE3?

SIJ128LDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ128LDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ128LDP-T1-GE3?

For technical support, including SIJ128LDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ128LDP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ128LDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ128LDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ128LDP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ128LDP-T1-GE3?

All SIJ128LDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ128LDP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ128LDP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ128LDP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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