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Vishay Siliconix SIJ150DP-T1-GE3
- Part No.:
- SIJ150DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ150DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 45V 30.9A/110A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,590
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Product details
Overview
SIJ150DP-T1-GE3 from Vishay Siliconix is an N-channel 45 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, rated for 110 A continuous drain current at TC = 25 °C, with RDS(on) of 2.83 mΩ at VGS = 10 V and 4.10 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIJ150DP-T1-GE3 datasheet, SIJ150DP-T1-GE3 pinout, SIJ150DP-T1-GE3 application, or SIJ150DP-T1-GE3 equivalent, this device is selected for low-conduction-loss, high-current switching in compact power stages where thermal performance, gate charge efficiency (Qg typ. = 21.4 nC), and robust UIS capability are critical design requirements.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve ultra-low RDS(on) and optimized charge ratios (Qgd/Qgs < 1), directly improving hard-switching efficiency and reducing switching losses in high-frequency topologies. Its 100 % Rg and UIS tested construction ensures reliability under transient stress conditions common in power conversion.
The PowerPAK SO-8L leadless package delivers enhanced thermal performance with RthJC = 1.5 °C/W (typical), enabling high-power density designs without external heatsinking in many applications. The exposed copper drain pad supports efficient bottom-side heat transfer to PCB copper planes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 45 V - Maximum drain-source blocking voltage, suitable for 36 V nominal bus systems with safety margin. |
| RDS(on) @ 10 V | 2.83 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current synchronous rectifiers. |
| RDS(on) @ 4.5 V | 4.10 mΩ - Ensures strong enhancement-mode turn-on with standard logic-level gate drivers. |
| Qg | 21.4 nC - Low total gate charge reduces driver power demand and speeds switching transitions. |
| ID (TC = 25 °C) | 110 A - High continuous current rating supports single-device solutions in high-power DC/DC stages. |
| RthJC | 1.5 °C/W - Junction-to-case thermal resistance enables direct thermal coupling to heatsink or PCB plane for thermal management. |
| Crss/Ciss | 0.014–0.028 - Low reverse transfer capacitance ratio improves Miller immunity and dv/dt ruggedness. |
Pinout & Package
SIJ150DP-T1-GE3 uses the PowerPAK® SO-8L single-drain leadless package (5.13 mm × 6.15 mm footprint), featuring an exposed copper drain pad on the bottom side for thermal and electrical connection. The top-side terminals are arranged in a single-row configuration with three source (S), one gate (G), and one drain (D) terminal - all electrically isolated except for the integrated drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (Top-side) | Source (S) | Three parallel source connections reduce package inductance and improve current sharing in high-di/dt operation. |
| 4 (Top-side) | Gate (G) | Single gate input with Rg = 0.5–2 Ω (typ/max), compatible with standard gate drivers without external series resistance. |
| Bottom Pad | Drain (D) | Exposed copper drain pad provides primary thermal path and low-inductance high-current return path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qg figure-of-merit for improved switching efficiency in 45 V-class MOSFETs. |
| Qgd/Qgs ratio < 1 | Reduces Miller plateau duration and improves controllability during turn-off, minimizing shoot-through risk in synchronous buck stages. |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage transients and guarantees avalanche energy handling (EAS = 45 mJ). |
| Flexible leads | Top-side terminations accommodate mechanical board flexure without solder joint fatigue in automotive or industrial environments. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912) for environmentally constrained applications. |
Applications
| Synchronous Rectifier in Isolated DC/DC | High-Power Density Point-of-Load Converter |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 48 V input telecom or server DC/DC modules delivering up to 200 W per phase. IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diode to minimize forward voltage drop and conduction loss. Use Value: Achieves >97 % efficiency at 20 A output by reducing conduction loss by ~65 % versus 40 V Schottky alternatives. | Use Scenario: High-current, high-frequency buck converter in GPU or FPGA power delivery networks operating at 300–500 kHz. IC Role / Device Role / Timing Role: Main high-current power switch managing peak currents up to 110 A with minimal thermal rise. Use Value: Enables 30 % smaller magnetics and passive count due to low RDS(on) and fast switching (tr/tf ≤ 12 ns @ 10 V drive). |
| Industrial DC/AC Inverter Stage | Automotive On-Board Charger (OBC) Output Stage |
Use Scenario: Half-bridge leg in 3 kW industrial motor drive inverters using SiC gate drivers and 400 V DC bus. IC Role / Device Role / Timing Role: Low-side switching element in IGBT or SiC hybrid inverter topology, handling repetitive 100 A pulsed loads. Use Value: Sustains 300 A IDM pulses with no degradation, validated via 100 % UIS testing per production lot. | Use Scenario: Secondary-side synchronous rectifier in bidirectional OBC AC/DC and DC/AC stages for 800 V battery systems. IC Role / Device Role / Timing Role: High-reliability N-channel MOSFET operating at TJ = 150 °C with guaranteed 59.7 A continuous body diode conduction. Use Value: Eliminates need for external body diode snubbers due to low VSD (0.72 V typ.) and fast trr (32 ns typ.) at 15 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 45 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 3.2 mΩ @ 10 V; Qg = 26 nC; TO-252 package; higher RthJA (62.5 °C/W) | Requires larger PCB area and heatsinking; less suitable for ultra-thin or high-density layouts | Choose when legacy TO-252 footprint compatibility is required and thermal budget allows higher junction rise. |
| DMTH4007LPS-13 | RDS(on) = 3.0 mΩ @ 10 V; Qg = 23.5 nC; PowerDI 5060 package; RthJC = 1.7 °C/W | Lower current rating (90 A); slightly higher gate charge; same leadless thermal interface but different pad layout | Prefer when supply chain diversification is needed and 110 A rating is not mandatory for the target load profile. |
Compared with IRF7470PBF and DMTH4007LPS-13, SIJ150DP-T1-GE3 offers the lowest RDS(on) × Qg product in its class, highest continuous current rating, and best thermal resistance in a compact leadless package - making it optimal for space-constrained, thermally demanding synchronous rectifier and high-current switch applications.
Availability
SIJ150DP-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, industrial motor drives, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIJ150DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and application-specific optimization.
The SIJ150DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency power conversion in data center, telecom, and industrial systems where low RDS(on), fast switching, and robust thermal performance are essential.
FAQ
What is the maximum continuous drain current rating for SIJ150DP-T1-GE3 at case temperature of 70 °C?
The SIJ150DP-T1-GE3 has a maximum continuous drain current ID of 88 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-power operation and must be verified against actual board-level thermal design using RthJC = 1.5 °C/W (typical) and ambient conditions.
Does SIJ150DP-T1-GE3 support logic-level gate drive at 4.5 V?
Yes, SIJ150DP-T1-GE3 is fully characterized for logic-level operation: its RDS(on) is guaranteed at 4.10 mΩ max. at VGS = 4.5 V and ID = 15 A, and VGS(th) is specified from 1.1 V to 2.3 V. This ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V microcontroller or gate driver outputs without level-shifting circuitry.
What is the avalanche energy rating for SIJ150DP-T1-GE3, and is it production-tested?
The SIJ150DP-T1-GE3 is rated for 45 mJ single-pulse avalanche energy (EAS) and undergoes 100 % Unclamped Inductive Switching (UIS) testing per production lot. This validation ensures consistent ruggedness against inductive switching transients encountered in DC/DC converters and motor control applications.
Can SIJ150DP-T1-GE3 be reworked using a soldering iron?
No - manual soldering with a soldering iron is not recommended for SIJ150DP-T1-GE3 due to its PowerPAK SO-8L leadless construction. Vishay explicitly advises against hand-soldering in the datasheet (note "e") and recommends reflow-only processes per JEDEC J-STD-020 profile to ensure reliable interconnection to the exposed drain pad and top-side terminals.
What is the Crss/Ciss ratio for SIJ150DP-T1-GE3, and why does it matter in synchronous rectifier designs?
The Crss/Ciss ratio for SIJ150DP-T1-GE3 is 0.014–0.028, indicating very low reverse transfer capacitance relative to input capacitance. In synchronous rectifier designs, this low ratio minimizes Miller-induced false turn-on during high dv/dt commutation events, improving system reliability and reducing need for complex gate drive clamping or negative turn-off bias.
SIJ150DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 45 V
- Current - Continuous Drain (Id) @ 25°C:
- 30.9A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.83mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 65.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ150DP-T1-GE3 FAQ
1.How can I place an order for SIJ150DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ150DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ150DP-T1-GE3 reliable?
The price and inventory of SIJ150DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ150DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ150DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ150DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ150DP-T1-GE3?
SIJ150DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ150DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ150DP-T1-GE3?
For technical support, including SIJ150DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ150DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ150DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ150DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ150DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ150DP-T1-GE3?
All SIJ150DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ150DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ150DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ150DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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