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Vishay Siliconix SIJ186DP-T1-GE3
- Part No.:
- SIJ186DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ186DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 23A/79.4A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,959
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Product details
Overview
SiJ186DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering RDS(on) = 4.5 mΩ at VGS = 10 V, Qg = 15.5 nC (typ.), and continuous drain current ID = 79.4 A (TC = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SiJ186DP-T1-GE3 datasheet, SiJ186DP-T1-GE3 pinout, SiJ186DP-T1-GE3 application, or SiJ186DP-T1-GE3 equivalent, this device offers verified low RDS(on)–Qoss figure-of-merit, 100 % Rg and UIS tested performance, and thermal resistance RthJC = 1.7 °C/W (typ.) - critical for high-power-density board-level design and thermal management validation.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low gate charge and output capacitance trade-offs, with Ciss = 1710 pF and Coss = 445 pF at VDS = 30 V, enabling fast switching in hard-switched and resonant topologies. Its body diode exhibits trr = 44 ns (typ.) and Qrr = 42 nC (typ.) at IF = 10 A, supporting efficient reverse recovery in synchronous buck and LLC configurations.
The device is characterized across temperature for stable threshold voltage (VGS(th) = 2.0–3.6 V at 25 °C, ΔVGS(th)/TJ = −6.7 mV/°C) and on-resistance (RDS(on) increases <2× from 25 °C to 125 °C at fixed VGS), ensuring predictable gate drive and conduction loss behavior under dynamic thermal conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V input systems and flyback primary switches. |
| RDS(on) @ VGS = 10 V | 4.5 mΩ max - Enables ≤0.36 W conduction loss at 30 A DC, critical for high-current power stages. |
| Qg | 15.5 nC typ. - Low gate charge reduces driver power and switching transition time, improving efficiency above 200 kHz. |
| ID (continuous, TC = 25 °C) | 79.4 A - Supports high-current output rails without parallel devices in compact PCB layouts. |
| RthJC | 1.7 °C/W typ. - Enables direct heatsink mounting for >50 W dissipation with minimal junction-to-case temperature rise. |
| VGS(th) | 2.0–3.6 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| tr/tf | 22/9 ns typ. - Fast edge rates minimize overlap loss in synchronous rectifiers and half-bridge drivers. |
Pinout & Package
SiJ186DP-T1-GE3 is housed in a leadless PowerPAK® SO-8L single-package (JEDEC MO-263AC), measuring 5.13 mm × 6.15 mm × 1.07 mm, with exposed copper drain pad on bottom side for enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; six pins tied internally to reduce source inductance and improve current sharing in high-di/dt operation. |
| 5 | Gate (G) | Control terminal; low Rg = 0.3–1.5 Ω supports fast, low-loss switching with minimal external gate resistor. |
| 6 | Drain (D) | Main power terminal; connected to large exposed copper pad on package underside for optimal thermal path to PCB ground plane or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on)–Qg and RDS(on)–Qoss FOMs for reduced conduction + switching losses in high-frequency SMPS. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress (EAS = 31.25 mJ). |
| PowerPAK® SO-8L package | Provides 3× lower RthJA vs. standard SO-8 and enables >50 % higher current density in same footprint. |
| Low VSD body diode | VSD = 0.77 V typ. at 5 A improves light-load efficiency in synchronous rectifier mode versus Schottky alternatives. |
Applications
| Server VRM Output Stage | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A per rail. IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 300–600 kHz with precise dead-time control. Use Value: 4.5 mΩ RDS(on) minimizes I²R loss at full load; low Qg enables clean gate drive with minimal overshoot and EMI. |
Use Scenario: 48 V to 12 V isolated DC/DC module for PLC I/O power distribution in factory automation. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or asymmetrical half-bridge topology. Use Value: 60 V VDS rating accommodates reflected voltage spikes; UIS-tested ruggedness ensures reliability under line transients. |
| Automotive On-Board Charger | Motor Drive Half-Bridge |
Use Scenario: Bidirectional AC/DC stage in 6.6 kW OBC, where MOSFET operates in both PFC boost and isolated DC/DC legs. IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC, requiring fast body diode recovery and low Qrr. Use Value: 44 ns trr and 42 nC Qrr reduce reverse recovery loss and EMI during zero-voltage switching transitions. |
Use Scenario: 24 V BLDC motor driver for HVAC blowers or power seats, operating at 20–40 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge, conducting peak currents up to 80 A. Use Value: 79.4 A ID rating eliminates need for paralleling; RthJC = 1.7 °C/W allows direct thermal coupling to metal-core PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 5.2 mΩ @ 10 V; Qg = 22 nC; TO-252 package; RthJC = 2.5 °C/W | Higher conduction + switching loss; larger footprint; less suitable for ultra-thin modules | Choose when legacy TO-252 layout compatibility is required and thermal budget allows ≥15 % higher loss. |
| DMTH6009LPS-13 | RDS(on) = 4.8 mΩ @ 10 V; Qg = 17.5 nC; PowerFLAT™ 5x6 package; RthJC = 1.9 °C/W | Slightly higher RDS(on) and Qg; comparable thermal performance; different pinout (G-D-S sequence) | Consider for designs needing alternate sourcing or where PowerFLAT™ assembly infrastructure exists. |
Compared with IRF7470PBF and DMTH6009LPS-13, SiJ186DP-T1-GE3 delivers the lowest combined RDS(on)–Qg FOM and best thermal resistance in its class, making it optimal for space-constrained, high-efficiency 60 V power stages where PCB area and thermal headroom are limited.
Availability
SiJ186DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.
Supply support for SiJ186DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.
The SiJ186DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current power conversion applications demanding ultra-low FOM and robust avalanche capability.
FAQ
What is the maximum continuous drain current rating for SiJ186DP-T1-GE3 at 70 °C case temperature?
The SiJ186DP-T1-GE3 supports 63.5 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limits under sustained high-power operation and must be validated against actual board-level thermal performance using the device's RthJC = 1.7 °C/W (typ.) and system heatsinking capability. The SiJ186DP-T1-GE3 maintains stable RDS(on) up to 150 °C junction temperature.
Does SiJ186DP-T1-GE3 support logic-level gate drive?
Yes, SiJ186DP-T1-GE3 has a gate threshold voltage VGS(th) of 2.0–3.6 V at 25 °C, enabling full enhancement with standard 3.3 V or 5 V microcontroller outputs or gate drivers. Its RDS(on) remains low at 5.4 mΩ max at VGS = 7.5 V, making it suitable for systems where gate drive voltage is constrained. The SiJ186DP-T1-GE3 does not require 10 V gate drive for functional operation, though RDS(on) is minimized at 10 V.
What is the avalanche energy rating of SiJ186DP-T1-GE3, and how is it tested?
The SiJ186DP-T1-GE3 is rated for single-pulse avalanche energy EAS = 31.25 mJ with L = 0.1 mH, and is 100 % tested for unclamped inductive switching (UIS) during production. This ensures robustness against inductive kickback in motor drives and relay snubbers. The SiJ186DP-T1-GE3 also supports IAS = 25 A single-pulse avalanche current, verified under standardized test conditions per JEDEC guidelines.
Can SiJ186DP-T1-GE3 be used in synchronous rectification for 48 V input converters?
Yes, SiJ186DP-T1-GE3 is explicitly recommended for synchronous rectification in DC/DC converters, including 48 V input topologies. Its 60 V VDS, low RDS(on) = 4.5 mΩ, and fast body diode (trr = 44 ns) enable high efficiency and low voltage drop in secondary-side synchronous rectifiers. The SiJ186DP-T1-GE3's low Qrr = 42 nC further reduces switching loss during body diode conduction intervals.
What is the thermal resistance from junction to ambient for SiJ186DP-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board (2 oz copper, 2-layer), SiJ186DP-T1-GE3 has RthJA = 20–25 °C/W (typ./max), per its Thermal Resistance Ratings table. This value assumes surface-mount conditions defined in Vishay's solder profile documentation (doc# 73257). For improved thermal performance, the SiJ186DP-T1-GE3's exposed drain pad should be connected to a large internal ground plane or external heatsink to leverage its RthJC = 1.7 °C/W.
SIJ186DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Ta), 79.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1710 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ186DP-T1-GE3 FAQ
1.How can I place an order for SIJ186DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ186DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ186DP-T1-GE3 reliable?
The price and inventory of SIJ186DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ186DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ186DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ186DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ186DP-T1-GE3?
SIJ186DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ186DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ186DP-T1-GE3?
For technical support, including SIJ186DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ186DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ186DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ186DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ186DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ186DP-T1-GE3?
All SIJ186DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ186DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ186DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ186DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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