My Inquiry
My Account
Vishay Siliconix SIJ4106DP-T1-GE3
- Part No.:
- SIJ4106DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ4106DP-T1-GE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) MOSFET POW
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIJ4106DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering RDS(on) = 8.3 mΩ at VGS = 10 V, Qg = 32 nC (typ.), and continuous drain current ID = 59 A at TC = 25 °C. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC/DC converters and inverters.
For engineers reviewing the SIJ4106DP-T1-GE3 datasheet, SIJ4106DP-T1-GE3 pinout, SIJ4106DP-T1-GE3 application, or SIJ4106DP-T1-GE3 equivalent, this page provides verified thermal resistance (RthJC = 1.3 °C/W typ.), body diode recovery (trr = 50 ns typ., Qrr = 100 nC), gate charge ratio (Qgd/Qgs < 1), 100% UIS tested reliability, and leadless PowerPAK SO-8L mechanical resilience for high-reliability power designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology optimized for low conduction and switching losses. Its Qgd/Qgs ratio < 1 ensures controlled dV/dt and reduced risk of false turn-on during hard switching, while the 100% UIS-tested ruggedness supports reliable operation under inductive load transients.
The PowerPAK® SO-8L package features exposed copper drain pads on the bottom side for low-inductance, high-current paths and enhanced thermal transfer to PCB copper. Thermal resistance RthJC = 1.3 °C/W (typ.) enables high-power density layouts without external heatsinks in many applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input rails up to 80 V DC with robust 20 % safety margin for voltage spikes in industrial and automotive DC/DC systems. |
| RDS(on) @ 10 V | 8.3 mΩ max - Enables ≤ 7.4 W conduction loss at 30 A, critical for high-efficiency synchronous rectification in 48 V telecom supplies. |
| Qg @ 7.5 V | 32 nC typ. - Reduces gate drive power and allows use of lower-cost, lower-current gate drivers in high-frequency (>500 kHz) SMPS designs. |
| ID (TC = 25 °C) | 59 A - Sustains full-load current in compact 1" × 1" FR4 layouts without forced air, supporting high-power-density board-level integration. |
| trr / Qrr | 50 ns / 100 nC typ. - Minimizes reverse recovery loss and EMI in synchronous rectifier configurations, especially in LLC resonant converters. |
| RthJC | 1.3 °C/W typ. - Allows direct thermal coupling to inner-layer copper pours, enabling junction temperatures ≤ 125 °C at 40 W dissipation with minimal PCB area. |
| VGS(th) | 2.0–3.8 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers, eliminating need for level-shifting in low-voltage control circuits. |
Pinout & Package
SIJ4106DP-T1-GE3 uses the leadless PowerPAK® SO-8L single-die package (5.13 mm × 6.15 mm footprint), with exposed copper drain terminals on the bottom side for optimal thermal and electrical performance. The top-side terminals are arranged in a standard SO-8L layout with source, gate, and drain connections clearly defined.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection tied to internal die source metallization; electrically and thermally connected to large bottom-side copper pad for low-inductance return path and heat spreading. |
| 4 | Gate (G) | Control terminal with Rg = 0.8 Ω (max); requires < 1 Ω series gate resistor to damp ringing due to low Crss (16.5 pF) and fast switching capability. |
| 5, 6 | Drain (D) | Main high-side power terminal; connects directly to exposed bottom copper drain pad-must be routed to high-current PCB planes with ≥ 2 oz copper and thermal vias for RthJA optimization. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 15 % lower RDS(on) × Qg figure-of-merit vs. prior generation, directly improving efficiency in 300–1000 kHz switching applications. |
| Qgd/Qgs < 1 | Reduces Miller plateau duration and improves controllability during turn-off, lowering risk of shoot-through in half-bridge configurations. |
| 100 % UIS tested | Guarantees survivability under unclamped inductive switching events up to IAS = 30 A and EAS = 45 mJ-no derating needed for motor drive or solenoid control. |
| Flexible leads | Top-side terminations accommodate ±0.1 mm placement tolerance and absorb PCB flex stress, preventing solder joint fatigue in vibration-prone environments. |
| Lead (Pb)-free & halogen-free | Meets RoHS 2011/65/EU and JEDEC JS709E requirements; compatible with standard SnAgCu reflow profiles up to 260 °C peak. |
Applications
| Synchronous Rectification | High-Power-Density DC/DC |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived converters for server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve light-load efficiency. Use Value: Achieves >96 % efficiency at 40 A output with RDS(on) = 8.3 mΩ and trr = 50 ns, cutting thermal load by 3.2 W vs. 40 V Schottky alternatives. |
Use Scenario: Primary-side high-side switch in 1 kW, 500 kHz interleaved boost PFC stage for telecom rectifiers. IC Role / Device Role / Timing Role: Fast-switching, low-Qg power switch handling 15 A RMS current with minimal gate drive loss. Use Value: Qg = 32 nC (at 7.5 V) reduces driver IC power consumption by 40 % versus comparable 100 V MOSFETs, enabling smaller driver solutions. |
| DC/AC Inverters | LED Backlighting |
Use Scenario: Half-bridge leg in 3 kW solar microinverter output stage operating at 16 kHz PWM frequency. IC Role / Device Role / Timing Role: High-reliability switching device subjected to repetitive UIS stress from grid-reactive loads. Use Value: 100 % UIS testing to 30 A/45 mJ eliminates need for snubbers or overdesign, reducing BOM count and layout area by 12 %. |
Use Scenario: Boost converter switch driving 120-string, 120 mA LED arrays in commercial signage with dimming via PWM. IC Role / Device Role / Timing Role: High-duty-cycle, low-RDS(on) switch sustaining 10 A pulsed current with minimal self-heating. Use Value: RDS(on) = 8.3 mΩ limits temperature rise to < 25 °C above ambient at 10 A, ensuring stable forward voltage and color consistency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 44 mΩ @ 10 V; Qg = 71 nC; TO-220 package; RthJC = 1.5 °C/W | Higher conduction loss and slower switching limit use to ≤ 100 kHz, non-compact designs; unsuitable for high-density PCBs. | Select only when legacy TO-220 mounting or higher surge rating (IDM = 160 A) is required; not drop-in for PowerPAK SO-8L footprints. |
| IXTP110N10T | RDS(on) = 9.2 mΩ @ 10 V; Qg = 52 nC; TO-220AB package; no UIS rating specified | Larger package increases layout area and thermal impedance; lack of UIS test data requires external clamping for inductive loads. | Consider for cost-sensitive, lower-frequency (< 200 kHz) applications where ruggedness is less critical and PCB space is unconstrained. |
Compared with IRF540NPBF and IXTP110N10T, SIJ4106DP-T1-GE3 delivers 5× lower RDS(on), 2.2× lower Qg, and guaranteed UIS robustness in a surface-mount package that cuts thermal resistance by 13 %-making it the preferred choice for space-constrained, high-efficiency, high-reliability 100 V power stages.
Availability
SIJ4106DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC conversion, and DC/AC inverter applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for SIJ4106DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.
The SIJ4106DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-efficiency power conversion in telecom, industrial, and renewable energy systems where low RDS(on) × Qg and UIS reliability are mandatory.
FAQ
What is the maximum continuous drain current for SIJ4106DP-T1-GE3 at case temperature 70 °C?
The maximum continuous drain current for SIJ4106DP-T1-GE3 is 47.2 A when the case temperature (TC) is maintained at 70 °C. This rating is derived from thermal limits and RDS(on) derating curves in the official Vishay datasheet (S23-0247-Rev. A). Operation at this current requires adequate PCB copper area and thermal vias to sustain TC ≤ 70 °C; exceeding this value risks thermal runaway or accelerated wear-out. SIJ4106DP-T1-GE3 must be mounted per the recommended PowerPAK SO-8L pad layout (Doc. #63818) to achieve this rating.
Does SIJ4106DP-T1-GE3 support logic-level gate drive?
Yes, SIJ4106DP-T1-GE3 supports logic-level gate drive with a gate-source threshold voltage (VGS(th)) range of 2.0 V to 3.8 V, allowing full enhancement using standard 3.3 V or 5 V microcontroller outputs. At VGS = 4.5 V, RDS(on) remains ≤ 12.5 mΩ (typ.), enabling efficient operation in low-voltage gate drive architectures. However, for minimum RDS(on) (8.3 mΩ), a 10 V gate drive is recommended. SIJ4106DP-T1-GE3 does not require external level shifters in most digital-control SMPS designs.
What is the thermal resistance from junction to case (RthJC) for SIJ4106DP-T1-GE3?
The typical junction-to-case thermal resistance (RthJC) for SIJ4106DP-T1-GE3 is 1.3 °C/W, with a maximum of 1.8 °C/W, measured under steady-state conditions with the drain pad soldered to a 1" × 1" FR4 board per JEDEC standards. This low value is enabled by the PowerPAK® SO-8L's exposed copper drain pad, which must be connected to ≥ 2 oz internal copper layers via ≥ 6 thermal vias (0.3 mm diameter) for optimal performance. SIJ4106DP-T1-GE3 achieves this RthJC without requiring external heatsinks in many 40–50 W applications.
Is SIJ4106DP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?
Yes, SIJ4106DP-T1-GE3 is well-suited for synchronous rectification in LLC resonant converters due to its low Qrr (100 nC typ.), fast trr (50 ns typ.), and low RDS(on) (8.3 mΩ). These parameters minimize reverse recovery loss and conduction loss during zero-voltage switching transitions, directly improving system efficiency and reducing EMI. The Qgd/Qgs ratio < 1 further enhances timing control during body-diode commutation. SIJ4106DP-T1-GE3 has been validated in such topologies per Vishay application note AN840.
What packaging and compliance certifications apply to SIJ4106DP-T1-GE3?
SIJ4106DP-T1-GE3 is supplied in tape-and-reel format (T1) with Pb-free (RoHS-compliant) and halogen-free construction per JEDEC JS709E and Vishay document #99912. The "GE3" suffix denotes green, lead-free, halogen-free packaging with NiPdAu plating on terminations. It meets J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for reflow up to 260 °C peak per IPC/JEDEC J-STD-020. SIJ4106DP-T1-GE3 is not intended for life-support applications unless explicitly qualified in writing by Vishay.
SIJ4106DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.8A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3610 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 69.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ4106DP-T1-GE3 FAQ
1.How can I place an order for SIJ4106DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ4106DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ4106DP-T1-GE3 reliable?
The price and inventory of SIJ4106DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ4106DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ4106DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ4106DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ4106DP-T1-GE3?
SIJ4106DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ4106DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ4106DP-T1-GE3?
For technical support, including SIJ4106DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ4106DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ4106DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ4106DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ4106DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ4106DP-T1-GE3?
All SIJ4106DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ4106DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ4106DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ4106DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIJ4106DP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
