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Vishay Siliconix SIJ4108DP-T1-GE3
- Part No.:
- SIJ4108DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ4108DP-T1-GE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) MOSFET POW
- Quantity:
- Payment:
- Shipping:
Inventory:11,722
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Product details
Overview
SiJ4108DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 56.7 A (TC = 25 °C) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, featuring RDS(on) = 7.5 mΩ at VGS = 10 V and Qg = 26.5 nC (typ.), optimized for high-efficiency synchronous rectification and DC/DC conversion.
For engineers reviewing the SiJ4108DP-T1-GE3 datasheet, SiJ4108DP-T1-GE3 pinout, SiJ4108DP-T1-GE3 application, or SiJ4108DP-T1-GE3 equivalent, this device supports critical design decisions in high-power-density power supplies, inverters, and LED backlighting where low conduction loss, fast switching, and thermal robustness are required.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low Qgd/Qgs ratio (< 1) and minimized Qoss, directly improving hard-switching efficiency and reducing voltage overshoot during turn-off. Its gate charge profile enables precise control of dv/dt and di/dt in high-frequency topologies.
The PowerPAK SO-8L leadless package delivers low thermal resistance (RthJC = 1.3 °C/W typ.) and enhanced power density versus SO-8, with exposed copper drain pad for efficient heat transfer to PCB. The device is 100 % Rg and UIS tested per JEDEC JESD22-A115.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for use in 48 V–96 V bus systems and boost stages. |
| RDS(on) @ 10 V | 7.5 mΩ (typ.) - Enables <1.2 W conduction loss at 15 A, critical for thermally constrained DC/DC designs. |
| Qg @ 7.5 V | 26.5 nC (typ.) - Reduces gate drive power and allows use with lower-current drivers in high-frequency (>500 kHz) operation. |
| ID (TC = 25 °C) | 56.7 A - Supports high-current output rails without parallel devices in compact industrial power modules. |
| RthJC | 1.3 °C/W (typ.) - Enables >60 W continuous dissipation with minimal heatsink, suitable for sealed enclosures. |
| VGS(th) | 2–4 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| Qgd/Qgs | < 1 - Optimizes Miller plateau timing to suppress parasitic turn-on and improve EMI performance. |
Pinout & Package
SiJ4108DP-T1-GE3 is housed in a leadless PowerPAK® SO-8L single-die package (5.13 mm × 6.15 mm × 1.07 mm), with exposed copper drain pad on bottom side for direct thermal coupling to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; six pins paralleled for low-inductance, high-current return path and thermal spreading. |
| 5 | Gate (G) | Single gate input; low Rg (0.3–1.4 Ω) minimizes gate loop inductance and ringing in fast-switching applications. |
| 6 | Drain (D) | Exposed copper drain pad - primary thermal and current path; requires soldered thermal pad area per Vishay Doc. #63818. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 15 % lower RDS(on) × Qg figure-of-merit vs. prior generation, directly improving system efficiency at 300–1000 kHz. |
| Qgd/Qgs < 1 | Reduces risk of false turn-on during high dv/dt commutation, eliminating need for negative gate drive in half-bridge configurations. |
| 100 % Rg and UIS tested | Guarantees gate robustness and avalanche energy handling (EAS = 31.25 mJ) for unclamped inductive switching reliability. |
| Flexible leads | Accommodates board flex and thermal expansion mismatch without solder joint fatigue in automotive and industrial environments. |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's Material Declaration (Doc. #99912), supporting green manufacturing requirements. |
Applications
| Synchronous Rectification | High-Power-Density DC/DC |
|---|---|
|
Use Scenario: Secondary-side switch in isolated 48 V–60 V output LLC resonant converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; operates in phase with transformer secondary voltage. Use Value: Cuts conduction losses by >40 % vs. 100 V Schottky, enabling >97 % peak efficiency at 2 kW with 2-layer PCB thermal management. |
Use Scenario: High-current buck converter stage in 12 V intermediate bus architecture for AI accelerators. IC Role / Device Role / Timing Role: High-side main switch operating at 600 kHz with 30 ns dead-time control. Use Value: 7.5 mΩ RDS(on) and 26.5 nC Qg allow full-load operation at 50 A with <1.5 °C/W effective thermal resistance via copper-filled vias. |
| DC/AC Inverters | LED Backlighting |
|
Use Scenario: H-bridge leg in 1–3 kVA solar microinverters interfacing string voltages up to 1000 V DC. IC Role / Device Role / Timing Role: Half-bridge low-side switch in unidirectional current path; handles bidirectional body diode conduction during freewheeling. Use Value: 63.1 A IS rating and 0.75–1.1 V VSD enable low-loss reverse recovery in 50 kHz PWM, reducing diode heating by 3× vs. discrete FET+diode solutions. |
Use Scenario: Boost controller switch in large-panel LCD TV backlight drivers requiring 120 V output from 12 V input. IC Role / Device Role / Timing Role: Primary switching element in current-mode boost topology; duty cycle modulated for dimming control. Use Value: 100 V VDS margin accommodates 2× input surge transients while maintaining <10 mΩ on-resistance, minimizing thermal derating at 85 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 10.5 mΩ @ 10 V; Qg = 32 nC; TO-252 package; higher RthJA (62 °C/W). | Lower current rating (42 A) and larger footprint limit use in space-constrained 500 W+ designs. | Prefer when cost sensitivity outweighs thermal density needs and TO-252 layout is already established. |
| DMTH10H015LPS-13 | RDS(on) = 1.5 mΩ @ 10 V; PowerPAK 8x8 package; 3× larger footprint; 50 % higher Qg. | Designed for 100 A+ systems; over-specified for ≤60 A applications, increasing gate drive complexity and BOM cost. | Select only when >100 A peak current or <1 mΩ RDS(on) is mandatory; otherwise SiJ4108DP-T1-GE3 offers optimal balance. |
Compared with IRF7470PBF and DMTH10H015LPS-13, SiJ4108DP-T1-GE3 delivers best-in-class RDS(on) × Qg tradeoff in a compact 5.13 mm × 6.15 mm footprint, enabling higher power density without sacrificing gate drive simplicity or thermal headroom in 48–96 V systems.
Availability
SiJ4108DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC converters, and LED backlighting requiring stable component supply across industrial, telecom, and consumer electronics production programs.
Supply support for SiJ4108DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiJ4108DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-efficiency switching in compact power conversion systems where thermal and electrical performance are co-constrained.
FAQ
What is the maximum continuous drain current rating for SiJ4108DP-T1-GE3 at case temperature of 70 °C?
The SiJ4108DP-T1-GE3 has a continuous drain current rating of 45.3 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB copper area and airflow conditions in the target application.
Does SiJ4108DP-T1-GE3 support logic-level gate drive?
Yes, SiJ4108DP-T1-GE3 supports logic-level gate drive with a gate threshold voltage (VGS(th)) range of 2–4 V, ensuring full enhancement at standard 3.3 V or 5 V microcontroller outputs. Its RDS(on) remains below 10.6 mΩ even at VGS = 7.5 V, enabling robust operation without dedicated level-shifting circuitry.
What is the thermal resistance from junction to case (RthJC) for SiJ4108DP-T1-GE3?
The SiJ4108DP-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.3 °C/W, with a maximum of 1.8 °C/W, measured from junction to the exposed drain pad. This low value enables efficient heat transfer to the PCB thermal plane and supports >60 W steady-state power dissipation with appropriate copper pour design per Vishay Doc. #63818.
Is SiJ4108DP-T1-GE3 suitable for avalanche-rated applications?
Yes, SiJ4108DP-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested with a single-pulse avalanche energy rating of 31.25 mJ and a peak avalanche current of 25 A (L = 0.1 mH). These ratings confirm its capability to withstand repetitive inductive switching stress in flyback, boost, and motor drive topologies without external snubbers.
What is the gate-source leakage current specification for SiJ4108DP-T1-GE3?
The gate-source leakage current (IGSS) for SiJ4108DP-T1-GE3 is ±100 nA maximum at VGS = ±20 V and TJ = 25 °C, as specified in the Static Electrical Characteristics table. This low leakage ensures stable gate bias and minimal standby power loss in always-on control circuits.
SIJ4108DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.2A (Ta), 56.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 52mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 52 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2440 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 69.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ4108DP-T1-GE3 FAQ
1.How can I place an order for SIJ4108DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ4108DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ4108DP-T1-GE3 reliable?
The price and inventory of SIJ4108DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ4108DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ4108DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ4108DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ4108DP-T1-GE3?
SIJ4108DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ4108DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ4108DP-T1-GE3?
For technical support, including SIJ4108DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ4108DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ4108DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ4108DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ4108DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ4108DP-T1-GE3?
All SIJ4108DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ4108DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ4108DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ4108DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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