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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ4409DP-T1-GE3

Name: SIJ4409DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ4409DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ4409DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ4409DP-T1-GE3.pdf

Description:: P-CHANNEL 40 V (D-S) MOSFET 150C

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Product details

Overview

SIJ4409DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching and battery protection circuits, featuring -40 V V_DS, 0.0096 Ω R_DS(on) at -10 V V_GS, 38.1 nC Q_g, -43.6 A continuous drain current (T_C = 25 °C), and PowerPAK® SO-8L package. It operates in motor drive control and reverse-polarity protection applications where low conduction loss and fast switching are critical.

For engineers reviewing the SIJ4409DP-T1-GE3 datasheet, SIJ4409DP-T1-GE3 pinout, SIJ4409DP-T1-GE3 application, or SIJ4409DP-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 3.0 °C/W), body diode characteristics (V_SD = -0.75 V at -5 A), avalanche energy rating (E_AS = 45 mJ), and package mechanical dimensions to support layout, thermal design, and reliability validation.

Technical Context

This device uses a trench-gate silicon process optimized for ultra-low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency operation in 12 V and 24 V DC systems. Its gate threshold voltage range (-1.0 V to -2.3 V) ensures robust turn-on with standard logic-level drivers while maintaining low leakage (I_DSS ≤ -1 μA at -40 V).

The integrated source-drain body diode supports synchronous rectification and freewheeling in H-bridge motor drives, with t_rr = 19 ns and Q_rr = 12 nC at 25 °C. Thermal performance is defined by R_thJC = 3.0 °C/W (max 3.8 °C/W) and R_thJA = 24 °C/W (t ≤ 10 s), validated on 1" × 1" FR4 board per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus protection
R_DS(on) @ -10 V	0.0096 Ω - Enables <1 W conduction loss at 32 A, supporting compact thermal design
Q_g @ -4.5 V	38.1 nC - Low gate charge reduces driver power demand and switching losses in PWM control
I_D (continuous)	-43.6 A @ T_C = 25 °C - Supports high-current load switching without external heatsink under case-cooled conditions
E_AS	45 mJ - Rated single-pulse avalanche energy ensures robustness during inductive load turn-off transients
R_thJC	3.0 °C/W - Confirmed junction-to-case thermal resistance enables accurate heatsink sizing
V_GS(th)	-1.0 to -2.3 V - Logic-compatible gate threshold allows direct interface with 3.3 V/5 V microcontrollers

Pinout & Package

SIJ4409DP-T1-GE3 is housed in a leadless PowerPAK® SO-8L package (5.13 mm × 6.15 mm × 1.07 mm), with exposed copper drain paddle on bottom side for enhanced thermal conduction. The package is RoHS-compliant, halogen-free, and qualified per JEDEC J-STD-020 moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1–4 and 7–8 are internally bonded to reduce source inductance
5	Gate (G)	Control terminal; requires ≤ ±20 V gate drive; R_g = 1.0–4.0 Ω typical for optimal switching
6	Drain (D)	Main power output; connected to exposed copper paddle for low thermal resistance path to PCB

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	Enables >95 % efficiency in 12 V load switches operating at 100 kHz–1 MHz
100 % R_g and UIS tested	Guarantees gate resistance consistency and unclamped inductive switching ruggedness across production lots
Body diode t_rr = 19 ns	Reduces reverse recovery losses in half-bridge configurations, minimizing shoot-through risk
V_SD = -0.75 V @ -5 A	Low forward voltage drop improves efficiency in freewheeling paths without external Schottky diodes
PowerPAK® SO-8L footprint	Drop-in replacement for SO-8 packages with 3× higher current density and 50 % lower R_thJA

Applications

Battery Protection Circuit	Motor Drive Half-Bridge
Use Scenario: Reverse-polarity and overcurrent protection in 12 V Li-ion battery packs for portable tools and medical devices. IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power path; activated/deactivated by system controller GPIO. Use Value: 0.0096 Ω R_DS(on) limits voltage drop to <0.3 V at 30 A, preserving battery runtime and reducing thermal stress on PCB traces.	Use Scenario: Low-side switching in brushed DC motor H-bridge for automotive HVAC actuators and industrial valves. IC Role / Device Role / Timing Role: Synchronous rectifier in freewheeling phase; body diode conducts return current during PWM off-time. Use Value: 19 ns t_rr and 12 nC Q_rr minimize switching losses and EMI generation compared to discrete Schottky solutions.
Load Switch for Industrial PLC I/O	Hot-Swap Controller Backplane
Use Scenario: Controlled power-up of field modules in programmable logic controllers with surge current limiting. IC Role / Device Role / Timing Role: Main pass element in soft-start load switch; gate driven via RC network for controlled dV/dt. Use Value: -43.6 A I_D rating and 45 mJ E_AS withstand capacitor inrush and cable fault transients without failure.	Use Scenario: Redundant power rail isolation in telecom backplanes during live insertion/removal of line cards. IC Role / Device Role / Timing Role: OR-ing FET in hot-swap circuit; blocks reverse current flow when primary supply fails. Use Value: -40 V V_DS and -1.0 V V_GS(th) ensure reliable turn-on with minimal gate drive overhead in dual-supply architectures.

Battery Protection Circuit

Motor Drive Half-Bridge

Use Scenario: Reverse-polarity and overcurrent protection in 12 V Li-ion battery packs for portable tools and medical devices.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power path; activated/deactivated by system controller GPIO.

Use Value: 0.0096 Ω R_DS(on) limits voltage drop to <0.3 V at 30 A, preserving battery runtime and reducing thermal stress on PCB traces.

Use Scenario: Low-side switching in brushed DC motor H-bridge for automotive HVAC actuators and industrial valves.

IC Role / Device Role / Timing Role: Synchronous rectifier in freewheeling phase; body diode conducts return current during PWM off-time.

Use Value: 19 ns t_rr and 12 nC Q_rr minimize switching losses and EMI generation compared to discrete Schottky solutions.

Load Switch for Industrial PLC I/O

Hot-Swap Controller Backplane

Use Scenario: Controlled power-up of field modules in programmable logic controllers with surge current limiting.

IC Role / Device Role / Timing Role: Main pass element in soft-start load switch; gate driven via RC network for controlled dV/dt.

Use Value: -43.6 A I_D rating and 45 mJ E_AS withstand capacitor inrush and cable fault transients without failure.

Use Scenario: Redundant power rail isolation in telecom backplanes during live insertion/removal of line cards.

IC Role / Device Role / Timing Role: OR-ing FET in hot-swap circuit; blocks reverse current flow when primary supply fails.

Use Value: -40 V V_DS and -1.0 V V_GS(th) ensure reliable turn-on with minimal gate drive overhead in dual-supply architectures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PbF	R_DS(on) = 0.012 Ω @ -10 V; Q_g = 42 nC; TO-252 package	Higher R_thJA (62 °C/W) requires larger PCB copper area; no exposed drain pad	Choose for legacy TO-252 layouts where footprint compatibility outweighs thermal performance
DMG2307L-7	R_DS(on) = 0.022 Ω @ -4.5 V; Q_g = 12 nC; SOT-23-6 package	Lower current rating (-2.8 A); suited for signal-level switching, not power loads	Choose only for space-constrained low-power bias rails where <5 A load current suffices

Compared with IRF7425PbF and DMG2307L-7, SIJ4409DP-T1-GE3 delivers superior power density (32.8 W PD), lowest R_DS(on) × Q_g FOM, and best thermal coupling via PowerPAK® SO-8L's exposed drain, making it optimal for high-current, thermally constrained industrial and automotive load switching.

Availability

SIJ4409DP-T1-GE3 is available at Aetrix Electronics and suitable for battery protection, motor drive control, and industrial load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIJ4409DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIJ4409DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8L P-channel MOSFET family, engineered specifically for high-current, low-voltage DC power management in automotive, industrial, and computing systems where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for SIJ4409DP-T1-GE3 at 70 °C case temperature?

The SIJ4409DP-T1-GE3 supports -34.9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal constraints and must be used with appropriate heatsinking or airflow to maintain junction temperature below 150 °C. Designers should verify actual power dissipation using R_DS(on) = 0.0096 Ω and ambient conditions before finalizing thermal solution.

Does SIJ4409DP-T1-GE3 require a gate resistor for safe operation?

Yes, SIJ4409DP-T1-GE3 benefits from an external gate resistor (R_g) to control switching speed and suppress ringing. The datasheet specifies R_g = 1.0–4.0 Ω typical, and using R_g ≈ 2.2 Ω balances turn-on/turn-off times (t_d(on) = 31 ns, t_d(off) = 41 ns at -4.5 V drive) while minimizing EMI and voltage overshoot. Omitting R_g may cause oscillation or excessive dv/dt stress on the gate oxide.

Can SIJ4409DP-T1-GE3 be used in avalanche mode repeatedly?

No, SIJ4409DP-T1-GE3 is rated for single-pulse avalanche only (E_AS = 45 mJ). While 100 % UIS testing ensures robustness against one-time inductive energy dump, repeated avalanche operation degrades the device and is not guaranteed by specification. For circuits with frequent inductive switching, use snubbers or clamp circuits to limit V_DS spikes below -40 V, ensuring SIJ4409DP-T1-GE3 remains within its safe operating area.

What is the recommended PCB pad layout for SIJ4409DP-T1-GE3's PowerPAK® SO-8L package?

The recommended minimum pad layout for SIJ4409DP-T1-GE3 is defined in Vishay document 63818: a 4.061 mm × 2.715 mm thermal pad for the exposed drain (Pin 6), with 0.510 mm wide source/gate traces and 0.710 mm solder mask openings. Use at least 2 oz copper and multiple thermal vias (≥8 × 0.3 mm) under the drain pad to achieve R_thJA ≤ 30 °C/W. Avoid solder fillet requirements at the exposed copper tip-bottom-side interconnection is ensured by solder volume, not fillet formation.

Is SIJ4409DP-T1-GE3 suitable for 3.3 V microcontroller gate drive?

Yes, SIJ4409DP-T1-GE3 is fully compatible with 3.3 V logic-level gate drive. Its V_GS(th) range (-1.0 V to -2.3 V) ensures strong enhancement at -3.3 V, delivering R_DS(on) = 0.0122 Ω (max) at -4.5 V and -15 A. At -3.3 V, R_DS(on) increases moderately but remains usable for moderate-current applications (<10 A); for full -43.6 A capability, -10 V drive is required. Always verify gate drive strength and rise/fall time in the target MCU's GPIO spec.

SIJ4409DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 15.5A (Ta), 43.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 126 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5670 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.6W (Ta), 32.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ4409DP-T1-GE3 FAQ

1.How can I place an order for SIJ4409DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ4409DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ4409DP-T1-GE3 reliable?

The price and inventory of SIJ4409DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ4409DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ4409DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ4409DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ4409DP-T1-GE3?

SIJ4409DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ4409DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ4409DP-T1-GE3?

For technical support, including SIJ4409DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ4409DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ4409DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ4409DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ4409DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ4409DP-T1-GE3?

All SIJ4409DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ4409DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ4409DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ4409DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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