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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ450DP-T1-GE3

Name: SIJ450DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ450DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ450DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ450DP-T1-GE3.pdf

Description:: N-CHANNEL 45 V (D-S) MOSFET POWE

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Product details

Overview

SIJ450DP-T1-GE3 from Vishay Siliconix is an N-channel 45 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering R_DS(on) = 1.9 mΩ at V_GS = 10 V and 2.65 mΩ at V_GS = 4.5 V, with 34 nC typical total gate charge and 113 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIJ450DP-T1-GE3 datasheet, SIJ450DP-T1-GE3 pinout, SIJ450DP-T1-GE3 application, or SIJ450DP-T1-GE3 equivalent, this page provides verified electrical parameters, thermal resistance data (R_thJC = 1.7 °C/W), body diode characteristics (V_SD = 0.71 V at I_S = 5 A), and validated alternative parts for high-density power conversion designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low Q_g (34 nC @ 4.5 V) and Q_gd/Q_gs ratio < 1, enabling fast switching with reduced Miller-induced turn-off delay and minimized voltage overshoot during hard-switching transitions.

Its PowerPAK® SO-8L leadless package features exposed copper drain pads on the bottom side for low-inductance, high-current conduction and enhanced thermal transfer to PCB copper, with R_thJC = 1.7 °C/W (typical) and R_thJA = 22 °C/W (t ≤ 10 s) under standard FR4 mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	45 V - maximum drain-source blocking voltage suitable for 36 V nominal bus systems with margin.
R_DS(on) @ 10 V	1.9 mΩ max - enables <1 W conduction loss at 23 A RMS in 48 V input buck converter stage.
R_DS(on) @ 4.5 V	2.65 mΩ max - supports direct drive from 3.3 V or 5 V controllers without gate boosting.
Q_g typ.	34 nC @ V_GS = 4.5 V - reduces gate driver power demand and improves efficiency at 500 kHz–1 MHz switching frequencies.
I_D cont. @ T_C = 25 °C	113 A - supports high-current output stages in server VRMs and telecom rectifiers.
V_GS(th)	1.0–2.3 V - ensures reliable turn-on with logic-level gate drivers and low-voltage microcontrollers.
Body diode V_SD	0.71 V typ. @ I_S = 5 A - lowers reverse recovery losses in synchronous rectifier mode versus discrete Schottky alternatives.

Pinout & Package

PowerPAK® SO-8L single-channel leadless package: 5.13 mm × 6.15 mm footprint, 1.07 mm height, exposed drain pad on bottom side for thermal and electrical connection. Compatible with standard SO-8 reflow profiles (peak 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8 (Drain pads)	Drain (D)	Exposed copper drain terminals on bottom side - primary current path and thermal conduction path to PCB ground plane.
5	Gate (G)	Top-side signal input - connects to gate driver; requires low-inductance routing due to 34 nC Q_g.
6	Source (S)	Top-side return node - referenced to gate driver common; forms Kelvin source connection for accurate current sensing.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables 1.9 mΩ R_DS(on) at 45 V while maintaining robust UIS rating (E_AS = 80 mJ).
Q_gd/Q_gs < 1	Reduces Miller plateau duration and improves controllability during dV/dt transients in hard-switched topologies.
Fully characterized body diode	Q_rr = 47 nC and t_rr = 40 ns enable efficient synchronous rectification without external Schottky clamping.
100 % R_g and UIS tested	Ensures gate resistance consistency (0.5–2 Ω) and avalanche ruggedness for unclamped inductive switching reliability.
Flexible leads	Top-side G and S pins accommodate mechanical stress from board flexure - critical for automotive and industrial mounting.

Applications

Server VRM Output Stage	Telecom DC/DC Rectifier
Use Scenario: High-current, high-frequency buck converter in 48 V intermediate bus architecture delivering up to 200 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 1.9 mΩ R_DS(on) and 34 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥0.8% over prior-gen 40 V MOSFETs.	Use Scenario: Isolated forward or LLC resonant converter secondary-side rectification in 48 V telecom power supply. IC Role / Device Role / Timing Role: Primary synchronous rectifier handling 60–100 A DC output with tight dead-time control. Use Value: Body diode V_SD = 0.71 V and Q_rr = 47 nC minimize reverse recovery energy, reducing thermal stress and EMI vs. Schottky solutions.
Industrial Motor Drive Inverter	High-Power Density USB PD3.1 GaN Adapter
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller requiring robust short-circuit withstand and thermal stability. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 113 A I_D rating and 150 °C T_J max allow sustained operation at 85 °C ambient with minimal heatsinking in enclosed enclosures.	Use Scenario: Secondary-side synchronous rectifier in compact 140 W USB PD3.1 adapter using GaN primary-side switching. IC Role / Device Role / Timing Role: Fast-turning rectifier synchronized to 1 MHz+ primary-side switching for minimal dead-time loss. Use Value: Q_gd/Q_gs < 1 and 7 ns rise time enable precise timing alignment, reducing cross-conduction risk and improving light-load efficiency.

Server VRM Output Stage

Telecom DC/DC Rectifier

Use Scenario: High-current, high-frequency buck converter in 48 V intermediate bus architecture delivering up to 200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 1.9 mΩ R_DS(on) and 34 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥0.8% over prior-gen 40 V MOSFETs.

Use Scenario: Isolated forward or LLC resonant converter secondary-side rectification in 48 V telecom power supply.

IC Role / Device Role / Timing Role: Primary synchronous rectifier handling 60–100 A DC output with tight dead-time control.

Use Value: Body diode V_SD = 0.71 V and Q_rr = 47 nC minimize reverse recovery energy, reducing thermal stress and EMI vs. Schottky solutions.

Industrial Motor Drive Inverter

High-Power Density USB PD3.1 GaN Adapter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller requiring robust short-circuit withstand and thermal stability.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 113 A I_D rating and 150 °C T_J max allow sustained operation at 85 °C ambient with minimal heatsinking in enclosed enclosures.

Use Scenario: Secondary-side synchronous rectifier in compact 140 W USB PD3.1 adapter using GaN primary-side switching.

IC Role / Device Role / Timing Role: Fast-turning rectifier synchronized to 1 MHz+ primary-side switching for minimal dead-time loss.

Use Value: Q_gd/Q_gs < 1 and 7 ns rise time enable precise timing alignment, reducing cross-conduction risk and improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 45 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 42 nC @ 4.5 V; TO-252 package (larger footprint, higher R_thJA).	Higher thermal resistance (R_thJA ≈ 62 °C/W) limits power density in space-constrained designs.	Choose when cost sensitivity outweighs board area and thermal performance requirements.
SIS445DN-T1-GE3	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 32 nC @ 4.5 V; same PowerPAK SO-8L package and pinout.	Lower V_DS rating (40 V) restricts use to ≤36 V bus systems; not rated for 45 V transient conditions.	Choose only if system maximum V_DS remains ≤40 V and tighter gate charge tolerance is required.

Compared with IRF7470PBF and SIS445DN-T1-GE3, SIJ450DP-T1-GE3 delivers the lowest R_thJC (1.7 °C/W) and highest V_DS margin (45 V) in its footprint, making it optimal for thermally demanding, high-reliability 48 V power conversion where layout area and thermal headroom are constrained.

Availability

SIJ450DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIJ450DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIJ450DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current synchronous rectification and switching in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum junction temperature rating for SIJ450DP-T1-GE3?

The SIJ450DP-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table of the official Vishay datasheet (Document Number: 63030, Rev. A). The device is designed for sustained operation at 150 °C junction temperature, supporting high-ambient applications such as enclosed power supplies and motor drives where thermal management is critical. Derating curves for continuous current versus case temperature are provided on page 5 of the datasheet.

Does SIJ450DP-T1-GE3 support 3.3 V gate drive?

Yes, SIJ450DP-T1-GE3 supports 3.3 V gate drive. Its gate threshold voltage (V_GS(th)) is specified from 1.0 V to 2.3 V, and R_DS(on) is guaranteed at V_GS = 4.5 V (2.65 mΩ max). At 3.3 V, the device remains fully enhanced with usable on-resistance - verified by transfer characteristic curves on page 3 of the datasheet. For optimal efficiency, however, 4.5 V or higher is recommended to achieve the lowest R_DS(on) and switching losses.

What is the thermal resistance from junction to case (R_thJC) for SIJ450DP-T1-GE3?

The SIJ450DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance (R_thJC) of 1.7 °C/W, with a maximum of 2.6 °C/W, as stated in the Thermal Resistance Ratings table (page 1 of datasheet 63030). This low value is enabled by the exposed drain pad in the PowerPAK® SO-8L package, which provides direct thermal conduction to the PCB copper. It is measured under steady-state conditions with proper soldering to a minimum 1" × 1" FR4 copper area.

Is SIJ450DP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?

Yes, SIJ450DP-T1-GE3 is explicitly qualified for synchronous rectification in LLC resonant converters. Its low Q_gd/Q_gs ratio (<1), fast switching times (t_r = 6 ns @ 10 V), and well-characterized body diode (t_rr = 40 ns, Q_rr = 47 nC) enable precise timing control and minimal reverse recovery loss. The Applications section of the datasheet lists "Synchronous rectification" and "High power density DC/DC" - both directly applicable to LLC secondary-side implementation.

What is the avalanche energy rating (E_AS) for SIJ450DP-T1-GE3?

The SIJ450DP-T1-GE3 is rated for 80 mJ single-pulse avalanche energy (E_AS) under test condition L = 0.1 mH, as specified in the Absolute Maximum Ratings table (page 1 of datasheet 63030). This rating reflects its ability to absorb inductive energy during unclamped inductive switching events - a key reliability metric for motor drive and hard-switched SMPS applications. The device undergoes 100 % UIS (unclamped inductive switching) testing per production lot.

SIJ450DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 45 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Ta), 113A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 5920 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ450DP-T1-GE3 FAQ

1.How can I place an order for SIJ450DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ450DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ450DP-T1-GE3 reliable?

The price and inventory of SIJ450DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ450DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ450DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ450DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ450DP-T1-GE3?

SIJ450DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ450DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ450DP-T1-GE3?

For technical support, including SIJ450DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ450DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ450DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ450DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ450DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ450DP-T1-GE3?

All SIJ450DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ450DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ450DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ450DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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