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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ458DP-T1-GE3

Name: SIJ458DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ458DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ458DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ458DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 60A PPAK SO-8

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Product details

Overview

SIJ458DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Power MOSFET in PowerPAK® SO-8L Single package, delivering R_DS(on) = 0.0022 Ω at V_GS = 10 V, 60 A continuous drain current (package-limited), and 40.6 nC total gate charge. It serves as a high-efficiency synchronous rectifier or main switch in POL and VRM applications.

For engineers reviewing the SIJ458DP-T1-GE3 datasheet, SIJ458DP-T1-GE3 pinout, SIJ458DP-T1-GE3 application, or SIJ458DP-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, 100 % UIS testing, halogen-free and RoHS-compliant construction, and thermal performance validated for high-current DC/DC converter layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage switching. Its 30 V V_DS rating and 0.0026 Ω R_DS(on) at 4.5 V enable efficient operation in 5 V and 3.3 V gate-driven point-of-load stages.

The device features fully characterized dynamic parameters including C_iss = 4810 pF, Q_gd = 13.5 nC, and t_r/t_f ≤ 20 ns/18 ns (at 10 V drive), supporting high-frequency synchronous buck topologies with minimized switching loss and shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with margin for transients in POL/VRM systems.
R_DS(on) @ 10 V	0.0022 Ω - Enables <1.2 W conduction loss at 60 A, critical for thermally constrained board areas.
R_DS(on) @ 4.5 V	0.0026 Ω - Ensures robust on-state performance with standard logic-level or controller-driven gate signals.
Q_g @ 4.5 V	40.6 nC - Determines gate driver power requirement and switching speed in 300–1000 kHz DC/DC converters.
I_D (continuous)	60 A (TC = 25 °C) - Package-limited rating enables single-device use in high-current CPU/GPU VRMs without paralleling.
R_thJC	1.3 °C/W (typ.) - Allows direct heatsink attachment to exposed drain pad for >50 W power dissipation in compact designs.
V_GS(th)	1.0–2.5 V - Ensures reliable turn-on with standard PWM controller outputs and supports gate drive margin analysis.

Pinout & Package

SIJ458DP-T1-GE3 uses the PowerPAK® SO-8L Single surface-mount package (6.15 mm × 5.13 mm × 1.0 mm), featuring an exposed drain pad on the bottom side for enhanced thermal conduction. The leadless design requires controlled reflow per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Source (S)	Seven parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
6	Gate (G)	Single gate input with R_g = 0.4–2.2 Ω (typ./max); optimized for low-noise gate drive routing.
Exposed Pad	Drain (D)	Thermally and electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical integrity.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for 30 V class, reducing PCB footprint vs. planar alternatives.
100 % UIS tested	Guarantees ruggedness against inductive switching stress in hard-switched DC/DC converters without external snubbers.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and computing end equipment.
Exposed drain thermal pad	Enables junction-to-board thermal resistance as low as 1.3 °C/W, supporting >60 W continuous dissipation with 2 oz copper.
Low Q_gd/Q_g ratio	Q_gd = 13.5 nC / Q_g = 40.6 nC → 33 % - Improves Miller immunity and reduces risk of false turn-on during high dv/dt transitions.

Applications

Server VRM Phase Module	GPU Core Power Stage
Use Scenario: High-density, multi-phase buck converter supplying 0.8–1.2 V at up to 120 A to modern x86 CPUs. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–600 kHz with 4.5 V gate drive. Use Value: 0.0026 Ω R_DS(on) at 4.5 V minimizes conduction loss under load transient conditions while maintaining thermal headroom.	Use Scenario: Compact dual-phase 3.3 V input buck regulator powering GPU memory interface (GDDR6). IC Role / Device Role / Timing Role: High-side main switch with fast turn-on (t_d(on) = 38 ns @ 4.5 V) and low Q_g. Use Value: 40.6 nC Q_g at 4.5 V enables efficient drive with integrated controller gate drivers, reducing external component count.
Telecom POL Converter	Industrial FPGA Core Supply
Use Scenario: 48 V intermediate bus converted to 1.0 V/60 A for baseband processing units in 5G radio units. IC Role / Device Role / Timing Role: Low-side FET in interleaved two-phase buck with 1 MHz switching frequency. Use Value: 100 % UIS tested rating ensures reliability under repetitive load dump and line transient events common in telecom infrastructure.	Use Scenario: Programmable logic core supply requiring tight voltage regulation (±1 %) and fast transient response. IC Role / Device Role / Timing Role: Synchronous rectifier with body diode recovery t_rr = 35–70 ns and Q_rr = 32–64 nC. Use Value: Fast, low-charge body diode reduces reverse recovery loss and EMI in high-dV/dt FPGA load-step events.

Server VRM Phase Module

GPU Core Power Stage

Use Scenario: High-density, multi-phase buck converter supplying 0.8–1.2 V at up to 120 A to modern x86 CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–600 kHz with 4.5 V gate drive.

Use Value: 0.0026 Ω R_DS(on) at 4.5 V minimizes conduction loss under load transient conditions while maintaining thermal headroom.

Use Scenario: Compact dual-phase 3.3 V input buck regulator powering GPU memory interface (GDDR6).

IC Role / Device Role / Timing Role: High-side main switch with fast turn-on (t_d(on) = 38 ns @ 4.5 V) and low Q_g.

Use Value: 40.6 nC Q_g at 4.5 V enables efficient drive with integrated controller gate drivers, reducing external component count.

Telecom POL Converter

Industrial FPGA Core Supply

Use Scenario: 48 V intermediate bus converted to 1.0 V/60 A for baseband processing units in 5G radio units.

IC Role / Device Role / Timing Role: Low-side FET in interleaved two-phase buck with 1 MHz switching frequency.

Use Value: 100 % UIS tested rating ensures reliability under repetitive load dump and line transient events common in telecom infrastructure.

Use Scenario: Programmable logic core supply requiring tight voltage regulation (±1 %) and fast transient response.

IC Role / Device Role / Timing Role: Synchronous rectifier with body diode recovery t_rr = 35–70 ns and Q_rr = 32–64 nC.

Use Value: Fast, low-charge body diode reduces reverse recovery loss and EMI in high-dV/dt FPGA load-step events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 0.0027 Ω @ 4.5 V; Q_g = 42 nC; PowerPAK® 1212-8 package (smaller footprint, higher R_thJA)	Higher thermal resistance (R_thJA = 50 °C/W vs. 25 °C/W) limits power handling in high-ambient environments.	Prefer when board space is constrained and peak current ≤ 45 A; verify thermal derating at 70 °C ambient.
DMTH3006LPSQ-13	R_DS(on) = 0.0024 Ω @ 4.5 V; Q_g = 45.5 nC; TSOP-8 package with gull-wing leads (R_thJC = 2.0 °C/W)	Lead-based package offers easier visual inspection and rework but lower thermal performance than exposed-pad SO-8L.	Select when manual rework capability is required or when JEDEC moisture sensitivity level (MSL) handling is a constraint.

Compared with IRLHS6342TRPBF and DMTH3006LPSQ-13, SIJ458DP-T1-GE3 provides the lowest R_DS(on) at 4.5 V and best thermal path via its exposed drain pad, making it optimal for high-power density, thermally demanding VRM and POL designs where layout space permits the PowerPAK® SO-8L footprint.

Availability

SIJ458DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM modules, GPU power stages, and telecom POL converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIJ458DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SiJ458DP belongs to Vishay's TrenchFET® Gen IV Power MOSFET family, engineered specifically for high-current, low-voltage DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIJ458DP-T1-GE3 at 70 °C case temperature?

The SIJ458DP-T1-GE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area and thermal vias under the exposed drain pad to maintain case temperature at or below 70 °C.

Does SIJ458DP-T1-GE3 require a gate resistor for stability in high-frequency buck converters?

Yes - while the SIJ458DP-T1-GE3 has a typical gate resistance of 0.4 Ω, a discrete gate resistor (typically 1–5 Ω) is recommended to dampen ringing, control dV/dt, and prevent false turn-on due to Miller coupling. The datasheet confirms t_d(on) and t_f test conditions assume R_g = 1 Ω, validating this practice.

Is SIJ458DP-T1-GE3 suitable for synchronous rectification in a 3.3 V input buck converter?

Yes - SIJ458DP-T1-GE3 is explicitly rated for R_DS(on) = 0.0026 Ω at V_GS = 4.5 V, making it well-suited for synchronous rectification in 3.3 V input stages. Its low threshold voltage (1.0–2.5 V) ensures full enhancement with standard controller gate drive outputs.

How does the PowerPAK® SO-8L package of SIJ458DP-T1-GE3 affect PCB assembly and reliability?

The PowerPAK® SO-8L package of SIJ458DP-T1-GE3 uses a leadless design with an exposed copper drain pad. It requires precise stencil aperture design and reflow profiling per JEDEC J-STD-020. While manual rework is not recommended, the package delivers superior thermal performance and reduced parasitic inductance versus gull-wing alternatives.

What is the body diode reverse recovery charge (Q_rr) specification for SIJ458DP-T1-GE3?

The SIJ458DP-T1-GE3 specifies Q_rr = 32–64 nC under conditions of I_F = 10 A, dI/dt = 100 A/µs, and T_J = 25 °C. This parameter is critical for estimating commutation loss in synchronous buck topologies and is measured directly on the device per the datasheet test methodology.

SIJ458DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4810 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 69.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ458DP-T1-GE3 FAQ

1.How can I place an order for SIJ458DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ458DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ458DP-T1-GE3 reliable?

The price and inventory of SIJ458DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ458DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ458DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ458DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ458DP-T1-GE3?

SIJ458DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ458DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ458DP-T1-GE3?

For technical support, including SIJ458DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ458DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ458DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ458DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ458DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ458DP-T1-GE3?

All SIJ458DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ458DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ458DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ458DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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