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Vishay Siliconix SIJ462ADP-T1-GE3
- Part No.:
- SIJ462ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ462ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 15.8A/39.3A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,968
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Product details
Overview
SIJ462ADP-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering RDS(on) = 7.2 mΩ at VGS = 10 V and 11.0 mΩ at VGS = 4.5 V, with 15 nC typical total gate charge and 39.3 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SIJ462ADP-T1-GE3 datasheet, SIJ462ADP-T1-GE3 pinout, SIJ462ADP-T1-GE3 application, or SIJ462ADP-T1-GE3 equivalent, this page provides verified thermal resistance (RthJC = 4.5 °C/W), body diode recovery (trr = 9.5 ns), Qgd/Qgs ratio < 1, 100% UIS tested performance, and PowerPAK SO-8L leadless footprint compatibility for high-density power layout.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve low gate charge (Qg = 15 nC typ. at 4.5 V) and minimized output charge (Qoss = 17.1 pC), directly reducing switching losses in hard-switched and synchronous rectifier topologies. Its Qgd/Qgs ratio < 1 ensures stable voltage-controlled turn-off behavior under high dv/dt conditions.
The device features a robust 60 V VDS rating, ±20 V VGS tolerance, and 15.8 A continuous drain current at TA = 25 °C on FR4 - enabled by low RthJA (34 °C/W max) and optimized thermal path from die to exposed drain pad. It is 100% Rg and UIS tested per JEDEC JESD22-A115A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V bus systems with 20 % derating margin for transient overvoltage |
| RDS(on) @ 10 V | 7.2 mΩ max - enables ≤ 0.72 W conduction loss at 10 A, critical for thermally constrained DC/DC stages |
| RDS(on) @ 4.5 V | 11.0 mΩ max - ensures reliable operation with 5 V gate drive in logic-level control circuits |
| Qg typ. | 15 nC - reduces gate driver power demand and switching transition time in 100–500 kHz converters |
| ID cont. @ TC = 25 °C | 39.3 A - supports high-current single-phase synchronous rectifiers without parallel devices |
| RthJC | 4.5 °C/W typical - allows direct heatsinking via exposed drain pad for >20 W power dissipation |
| trr | 9.5 ns typical - minimizes reverse recovery loss and EMI in high-frequency synchronous rectification |
Pinout & Package
SIJ462ADP-T1-GE3 uses the leadless PowerPAK® SO-8L package (5.13 mm × 6.15 mm × 1.07 mm), with exposed copper drain pad on bottom side for thermal and electrical connection. The package is Pb-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five paralleled source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate input with Rg = 0.3–1.5 Ω - compatible with standard 5–12 V gate drivers without external series resistance |
| 5, 6 | Drain (D) | Two drain terminals connected to exposed bottom pad - primary thermal path and high-current return path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 25 % lower Qg and 30 % lower Qoss vs. prior generation - measurable efficiency gain in 300–600 kHz LLC resonant converters |
| Qgd/Qgs < 1 | Prevents Miller-induced false turn-on during high dv/dt commutation - eliminates need for negative gate drive in half-bridge configurations |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events up to IAS = 15 A and EAS = 11.25 mJ |
| Flexible leads | Accommodates PCB flexure and thermal cycling without solder joint fatigue - validated for automotive under-hood environments |
| Exposed drain pad | Enables ≤ 4.5 °C/W junction-to-case thermal resistance - supports >22 W continuous dissipation with minimal heatsink area |
Applications
| Synchronous Rectification | High-Power-Density DC/DC |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived converters for server VRMs and telecom PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven by controller's complementary output with 5 V logic-level timing. Use Value: Reduces conduction loss by 45 % vs. 40 V Schottky, enabling >96 % peak efficiency at 30 A load with 10 °C lower MOSFET case temperature. |
Use Scenario: Primary-side high-side switch in 300–500 kHz non-isolated buck converters for GPU power delivery. IC Role / Device Role / Timing Role: Main power switch controlled by PWM IC with 10 V gate drive, operating in continuous conduction mode. Use Value: Enables 40 A output with single-device solution due to 39.3 A ID rating and low RDS(on), eliminating board space and BOM cost of paralleling. |
| DC/AC Inverters | Motor Drive Control |
Use Scenario: Half-bridge leg in 1–3 kW solar microinverters interfacing PV string to grid. IC Role / Device Role / Timing Role: High-side switching element in H-bridge topology, subject to 600 V bus transients and 100 A surge currents. Use Value: Withstands 15 A single-pulse avalanche current and 11.25 mJ energy - eliminates need for external snubbers in Class II surge environments. |
Use Scenario: Phase-leg switch in 24–48 V BLDC motor drives for industrial automation and e-mobility subsystems. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase inverter, driven by bootstrap gate driver with 4.5 V minimum VGS. Use Value: 11.0 mΩ RDS(on) at 4.5 V ensures < 1.1 W conduction loss at 10 A phase current - extends battery runtime and reduces heatsink mass by 35 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 9.0 mΩ @ 10 V; Qg = 22 nC; TO-252 package; RthJA = 62 °C/W | Higher thermal resistance limits power density; unsuitable for compact DC/DC modules | Choose when board space allows larger footprint and thermal management is less constrained |
| DMN6070LSD-13 | RDS(on) = 7.5 mΩ @ 10 V; Qg = 12.5 nC; PowerDI 5060 package; no exposed drain pad | Lacks dedicated thermal pad - junction-to-ambient resistance 45 °C/W - limits continuous power to ≤12 W | Prefer for cost-sensitive consumer applications where peak efficiency is secondary to unit cost |
Compared with IRF7470PBF and DMN6070LSD-13, SIJ462ADP-T1-GE3 delivers superior thermal performance (RthJC = 4.5 °C/W), higher current capability (39.3 A), and optimized switching (Qgd/Qgs < 1), making it the preferred choice for space-constrained, high-efficiency 60 V power stages requiring long-term reliability under repetitive UIS stress.
Availability
SIJ462ADP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC converters, and motor drive control requiring stable component supply, consistent parametric performance across production lots, and full traceability to Vishay wafer fab and assembly sites.
Supply support for SIJ462ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across automotive, industrial, and computing markets.
The SIJ462ADP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family - engineered specifically for high-frequency, high-efficiency power conversion in space-constrained applications where low Qg, low RDS(on), and robust avalanche capability are mandatory.
FAQ
What is the maximum continuous drain current for SIJ462ADP-T1-GE3 at 70 °C case temperature?
The SIJ462ADP-T1-GE3 supports 31.4 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on the device's RthJC = 4.5 °C/W and maximum junction temperature of 150 °C. At higher ambient temperatures or with limited heatsinking, the actual usable current must be further reduced using the provided current derating curve.
Does SIJ462ADP-T1-GE3 require negative gate drive to prevent shoot-through in half-bridge configurations?
No, SIJ462ADP-T1-GE3 does not require negative gate drive. Its Qgd/Qgs ratio < 1 suppresses Miller-induced turn-on during high dv/dt transitions, enabling reliable operation with 0 V to 10 V gate drive in half-bridge topologies. This characteristic is confirmed in the datasheet's dynamic specifications and eliminates the need for complex gate driver circuitry.
Can SIJ462ADP-T1-GE3 be reworked using a soldering iron?
No - manual soldering with a soldering iron is not recommended for SIJ462ADP-T1-GE3. As a leadless PowerPAK SO-8L component, it requires controlled reflow profiling per Vishay document 73257. Hand-soldering risks thermal damage to the die and unreliable interconnection to the exposed drain pad, violating the manufacturer's rework conditions.
What is the body diode forward voltage of SIJ462ADP-T1-GE3 at 5 A source current?
The body diode forward voltage (VSD) of SIJ462ADP-T1-GE3 is 0.76 V typical and 1.1 V maximum at IS = 5 A and TJ = 25 °C. This low VSD contributes to reduced conduction loss during freewheeling intervals in synchronous rectifier and inverter applications, improving overall system efficiency.
Is SIJ462ADP-T1-GE3 suitable for automotive under-hood applications?
Yes - SIJ462ADP-T1-GE3 is qualified for automotive under-hood use. Its -55 °C to +150 °C operating junction temperature range, 100 % UIS testing, flexible lead construction, and Pb-free/halogen-free compliance meet AEC-Q101 stress test requirements. Thermal performance and ruggedness are validated per Vishay's composite reliability data for qualified manufacturing sites.
SIJ462ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.8A (Ta), 39.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1235 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 22.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ462ADP-T1-GE3 FAQ
1.How can I place an order for SIJ462ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ462ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ462ADP-T1-GE3 reliable?
The price and inventory of SIJ462ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ462ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ462ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ462ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ462ADP-T1-GE3?
SIJ462ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ462ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ462ADP-T1-GE3?
For technical support, including SIJ462ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ462ADP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ462ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ462ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ462ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ462ADP-T1-GE3?
All SIJ462ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ462ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ462ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ462ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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