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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ462DP-T1-GE3

Name: SIJ462DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ462DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ462DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ462DP-T1-GE3.pdf

Description:: MOSFET N-CH 60V 46.5A PPAK SO-8

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Product details

Overview

SIJ462DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8L package, rated for 46.5 A continuous drain current at TC = 25 °C, with R_DS(on) of 6.5 mΩ at V_GS = 10 V and 12.5 mΩ at V_GS = 4.5 V, used in primary-side switching and synchronous rectification in high-efficiency DC/DC converters.

For engineers reviewing the SIJ462DP-T1-GE3 datasheet, SIJ462DP-T1-GE3 pinout, SIJ462DP-T1-GE3 application, or SIJ462DP-T1-GE3 equivalent, this page delivers verified thermal resistance (R_thJC = 3 °C/W max), gate charge (Q_g = 9.3 nC typ. at 4.5 V), avalanche energy rating (E_AS = 20 mJ), body diode recovery (t_rr = 25 ns typ.), and lead-free/halogen-free compliance - all critical for high-frequency, high-current power stage design.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g/Q_gd ratio (9.3 nC / 2.3 nC), enabling efficient operation in hard-switched topologies. Its 60 V V_DS rating supports 48 V bus and 36 V automotive input applications.

The device features 100 % R_g and UIS tested units, guaranteed avalanche capability (I_AS = 20 A, E_AS = 20 mJ), and a robust body diode with V_SD = 0.77 V (typ.) at I_S = 5 A and t_rr = 25 ns (typ.) - essential for synchronous rectifier reliability under reverse recovery stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V nominal input systems with 20 % margin for transients
R_DS(on) @ V_GS = 10 V	6.5 mΩ (typ.) - enables <1 W conduction loss at 40 A in TO-220-equivalent thermal footprint
R_DS(on) @ V_GS = 4.5 V	10.0 mΩ (typ.) - ensures stable turn-on with 5 V gate drivers in logic-level designs
Q_g	9.3 nC (typ. at 4.5 V) - allows <100 ns turn-on with 100 Ω gate resistor at 5 V drive
I_D (continuous, T_C = 25 °C)	46.5 A - delivers >95 % efficiency in 12 V → 1 V, 40 A buck converters
R_thJC	3 °C/W (max.) - enables direct heatsink mounting for >20 W dissipation without derating
E_AS	20 mJ - withstands single-pulse inductive energy in flyback and LLC primary switches

Pinout & Package

SIJ462DP-T1-GE3 uses the PowerPAK® SO-8L surface-mount package (5.13 mm × 6.15 mm × 1.07 mm), featuring exposed-drain copper pad on bottom for enhanced thermal performance and no leads - soldering requires reflow only; manual iron rework is not recommended.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1–4 and 7–8 are internally paralleled for low-inductance, high-current return path
5	Gate (G)	Control terminal; low R_g (0.8–3.7 Ω) minimizes gate ringing in high-dV/dt environments
6	Drain (D)	Main power output; connected to large exposed copper pad on bottom for thermal and current conduction

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar MOSFETs at same die size, reducing conduction loss in space-constrained PCBs
100 % R_g and UIS tested	Ensures gate robustness against ESD and reliable unclamped inductive switching in production-grade power supplies
Lead (Pb)-free and halogen-free	Meets RoHS 2011/65/EU and JEDEC J-STD-020 reflow requirements without compromising thermal or electrical performance
Low Q_gd/Q_g ratio	24.7 % (2.3 nC / 9.3 nC) - improves Miller immunity and reduces switching loss in high-frequency (>500 kHz) converters
Body diode t_rr = 25 ns (typ.)	Minimizes reverse recovery loss and voltage overshoot during synchronous rectification in buck and forward converters

Applications

Primary-Side Switching	Synchronous Rectification
Use Scenario: High-efficiency flyback or LLC resonant converter primary switch in telecom and industrial SMPS. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer primary winding. Use Value: 60 V rating and 20 mJ E_AS enable reliable operation under 48 V input surges and leakage inductance spikes.	Use Scenario: Secondary-side synchronous rectifier in isolated DC/DC modules for server VRMs and PoE injectors. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode, driven by transformer-coupled or controller-synchronized gate signal. Use Value: 12.5 mΩ R_DS(on) at 4.5 V and 25 ns t_rr reduce conduction and recovery losses versus 40 V Schottky alternatives.
DC/DC Boost Converter	DC/AC Inverter Stage
Use Scenario: High-current boost stage in solar microinverters and battery management system pre-regulators. IC Role / Device Role / Timing Role: High-side switch in non-isolated boost topology, operating at 100–300 kHz switching frequency. Use Value: 9.3 nC Q_g and 0.8–3.7 Ω R_g allow clean, low-loss switching with standard gate drivers and minimal external components.	Use Scenario: Half-bridge leg in low-voltage (<60 V) grid-tie inverters and motor drives for HVAC and pumps. IC Role / Device Role / Timing Role: Low-side or high-side switching element in H-bridge configuration, handling bidirectional current flow. Use Value: 28.3 A continuous source current and 100 A pulsed rating support high peak currents during PWM dead-time transitions.

Primary-Side Switching

Synchronous Rectification

Use Scenario: High-efficiency flyback or LLC resonant converter primary switch in telecom and industrial SMPS.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer primary winding.

Use Value: 60 V rating and 20 mJ E_AS enable reliable operation under 48 V input surges and leakage inductance spikes.

Use Scenario: Secondary-side synchronous rectifier in isolated DC/DC modules for server VRMs and PoE injectors.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode, driven by transformer-coupled or controller-synchronized gate signal.

Use Value: 12.5 mΩ R_DS(on) at 4.5 V and 25 ns t_rr reduce conduction and recovery losses versus 40 V Schottky alternatives.

DC/DC Boost Converter

DC/AC Inverter Stage

Use Scenario: High-current boost stage in solar microinverters and battery management system pre-regulators.

IC Role / Device Role / Timing Role: High-side switch in non-isolated boost topology, operating at 100–300 kHz switching frequency.

Use Value: 9.3 nC Q_g and 0.8–3.7 Ω R_g allow clean, low-loss switching with standard gate drivers and minimal external components.

Use Scenario: Half-bridge leg in low-voltage (<60 V) grid-tie inverters and motor drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Low-side or high-side switching element in H-bridge configuration, handling bidirectional current flow.

Use Value: 28.3 A continuous source current and 100 A pulsed rating support high peak currents during PWM dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR462DP-T1-GE3	Same die, identical R_DS(on), Q_g, and thermal specs; differs only in tape-and-reel packaging (SiR prefix denotes alternate reel spec)	No functional difference; suitable for identical use cases including synchronous rectification and DC/DC conversion	Select SiR462DP-T1-GE3 only if specific tape width or reel orientation is required by SMT line setup
IRF7470PBF	Higher R_DS(on) (11.5 mΩ @ 10 V), larger SO-8 package (R_thJA = 62 °C/W vs. 25 °C/W), no UIS rating	Lower efficiency and thermal headroom; unsuitable for high-current synchronous rectification or high-frequency boost	Use IRF7470PBF only in cost-sensitive, low-power (<10 A) linear-regulator bypass or low-frequency switching where thermal margin is ample

Compared with SIJ462DP-T1-GE3, SiR462DP-T1-GE3 offers identical electrical and thermal behavior with packaging variation only, while IRF7470PBF trades 40 % higher conduction loss and inferior thermal performance for legacy compatibility - making SIJ462DP-T1-GE3 the optimal choice for high-density, high-efficiency power stages.

Availability

SIJ462DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC/DC converters, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and full traceability.

Supply support for SIJ462DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIJ462DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8L family, engineered specifically for high-current, high-frequency switching in compact, thermally demanding power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIJ462DP-T1-GE3 at 70 °C case temperature?

The SIJ462DP-T1-GE3 is rated for 37.2 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits under sustained high-power operation and must be validated against actual board layout and heatsinking in the final design. The SIJ462DP-T1-GE3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIJ462DP-T1-GE3 support 5 V gate drive in logic-level applications?

Yes, SIJ462DP-T1-GE3 is fully compatible with 5 V gate drive: its R_DS(on) is specified at 12.5 mΩ (max.) at V_GS = 4.5 V and 10.0 mΩ (typ.) at that condition, ensuring strong enhancement-mode turn-on without requiring 10 V bias. The SIJ462DP-T1-GE3 gate threshold voltage range (1.4–2.5 V) further guarantees reliable switching with standard 5 V microcontroller outputs.

What is the thermal resistance from junction to case (R_thJC) for SIJ462DP-T1-GE3?

The SIJ462DP-T1-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 4 °C/W, with typical value of 3 °C/W, measured from junction to the exposed drain pad. This low value enables direct thermal coupling to PCB copper or external heatsinks - critical for maintaining T_J ≤ 150 °C in high-power applications like 48 V → 12 V DC/DC converters using the SIJ462DP-T1-GE3.

Is SIJ462DP-T1-GE3 suitable for synchronous rectification in a 12 V output buck converter?

Yes, SIJ462DP-T1-GE3 is well-suited for synchronous rectification in 12 V output buck converters due to its low R_DS(on) (10.0 mΩ typ. at 4.5 V), fast body diode recovery (t_rr = 25 ns typ.), and 28.3 A continuous source current rating. When used as the low-side switch in such a converter, the SIJ462DP-T1-GE3 reduces conduction loss by >50 % compared to a Schottky diode and eliminates reverse recovery loss entirely.

What does the "-GE3" suffix indicate in SIJ462DP-T1-GE3?

Within Vishay's part numbering system, the "-GE3" suffix in SIJ462DP-T1-GE3 denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). It confirms that the SIJ462DP-T1-GE3 uses matte tin plating and meets environmental compliance without altering electrical or thermal specifications.

SIJ462DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 46.5A(Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ462DP-T1-GE3 FAQ

1.How can I place an order for SIJ462DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ462DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ462DP-T1-GE3 reliable?

The price and inventory of SIJ462DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ462DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ462DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ462DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ462DP-T1-GE3?

SIJ462DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ462DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ462DP-T1-GE3?

For technical support, including SIJ462DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ462DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ462DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ462DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ462DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ462DP-T1-GE3?

All SIJ462DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ462DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ462DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ462DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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