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Vishay Siliconix SIJ470DP-T1-GE3
- Part No.:
- SIJ470DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ470DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 58.8A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:680
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Product details
Overview
SIJ470DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) MOSFET in PowerPAK® SO-8L Single package, optimized for high-current switching with RDS(on) = 0.0091 Ω at VGS = 10 V, 58.8 A continuous drain current at TC = 25 °C, and 28.5 nC total gate charge. It serves as a primary-side switch in DC/AC inverters and synchronous rectifier in high-efficiency power supplies.
For engineers reviewing the SIJ470DP-T1-GE3 datasheet, SIJ470DP-T1-GE3 pinout, SIJ470DP-T1-GE3 application, or SIJ470DP-T1-GE3 equivalent, key selection criteria include its 100 V VDS, low RDS(on) at 7.5 V and 10 V gate drive, robust UIS and Rg tested reliability, and thermal performance with RthJC = 1.8 °C/W.
Technical Context
This MOSFET employs ThunderFET® technology to balance conduction loss (RDS(on)), switching energy (Qg, Qoss), and dynamic behavior (Ciss = 2050 pF, Coss = 470 pF). Its gate threshold voltage (VGS(th) = 2.3–3.5 V) ensures stable turn-on under industrial temperature range (–55 to +150 °C).
The device features 100% Rg and UIS testing, integrated body diode with trr = 44–85 ns and Qrr = 67–130 nC, and is qualified for lead-free and halogen-free assembly per JEDEC J-STD-020. Its PowerPAK SO-8L package enables high power density with exposed-drain thermal pad and bottom-side solder interconnection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage for primary-side switching in 48 V–96 V bus systems. |
| RDS(on) Max | 0.0091 Ω at VGS = 10 V - Enables <1 W conduction loss at 33 A, critical for high-efficiency 1 kW+ inverters. |
| ID Continuous | 58.8 A at TC = 25 °C - Supports high-current synchronous rectification without external heatsink in compact layouts. |
| Qg Typ | 28.5 nC at VGS = 7.5 V - Low gate charge reduces driver power and enables efficient operation with standard gate drivers. |
| RthJC | 1.8 °C/W (typ) - Enables direct thermal coupling to PCB copper or heatsink, supporting >40 W dissipation at ΔT = 72 °C. |
| VGS(th) | 2.3–3.5 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drive. |
| EAS | 80 mJ - Rated single-pulse avalanche energy supports robustness against inductive switching transients. |
Pinout & Package
SIJ470DP-T1-GE3 uses the PowerPAK® SO-8L Single surface-mount package (6.15 mm × 5.13 mm × 1.07 mm), featuring an exposed drain pad on the bottom for enhanced thermal performance and four source terminals for low-inductance current return paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≤20 V drive; Rg = 0.5–2.2 Ω typical for optimal switching speed vs. ringing trade-off. |
| 2 (S) | Source | Power return path; pins 2, 3, 4, and 8 are internally connected to minimize source inductance in high-di/dt applications. |
| 3 (S) | Source | Parallel source connection; used for Kelvin sensing or low-impedance return in synchronous rectifier configurations. |
| 4 (S) | Source | Additional low-inductance source terminal; improves layout symmetry and reduces common-source inductance. |
| 5 (D) | Drain | Main power output; connected to exposed copper pad on bottom side for thermal conduction and high-current routing. |
| 6 (D) | Drain | Secondary drain connection; shares internal die connection with pin 5 and bottom pad for current sharing. |
| 7 (D) | Drain | Third drain terminal; provides redundant high-current path and mechanical stability for large power pads. |
| 8 (S) | Source | Fourth source terminal; completes symmetrical 4-source / 3-drain configuration for balanced PCB layout. |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® Technology | Optimized RDS(on)/Qg/Qoss ratio enables simultaneous reduction of conduction and switching losses in hard-switched topologies. |
| 100% Rg Tested | Ensures consistent gate drive timing and eliminates risk of gate oscillation due to out-of-spec gate resistance in production lots. |
| 100% UIS Tested | Guarantees ruggedness against unclamped inductive switching events-critical for motor drives and DC/AC inverters. |
| Lead (Pb)-free & Halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C, enabling use in environmentally regulated industrial and automotive supply chains. |
| Exposed Drain Thermal Pad | Bottom-side copper pad allows direct thermal interface to PCB ground plane or heatsink, reducing RthJA by up to 40 % vs. standard SO-8. |
Applications
| Primary Side Switching | Synchronous Rectification |
|---|---|
Use Scenario: High-frequency flyback or LLC resonant converter operating at 100–500 kHz in telecom power supplies. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer; handles full input voltage and peak currents. Use Value: Low Qg (28.5 nC) and fast switching (td(off) = 22 ns) reduce dead-time losses and improve efficiency above 92 % at full load. |
Use Scenario: Secondary-side rectification in isolated DC/DC converters for server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-VF replacement for Schottky diodes; body diode conducts during dead time, then channel conducts during active period. Use Value: RDS(on) = 0.0091 Ω cuts conduction loss by >60 % vs. 40 V Schottky, enabling >95 % efficiency at 50 A output. |
| DC/AC Inverters | LED Backlighting |
Use Scenario: Half-bridge stage in solar microinverters converting 40–60 V DC to 230 V AC grid-tied output. IC Role / Device Role / Timing Role: High-side or low-side switch in bridge leg; subjected to repetitive 100 V blocking and 50+ A pulsed current. Use Value: 100 V rating with 40 A IAS and 80 mJ EAS ensures safe operation during grid fault transients and startup surges. |
Use Scenario: Constant-current LED string driver in commercial signage with 36–72 V input and 2–5 A output. IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating LED brightness at 1–20 kHz. Use Value: Low RDS(on) minimizes thermal rise in sealed enclosures; 150 A IDM withstands inrush during cold-start LED arrays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | TO-220 package, RDS(on) = 0.044 Ω @ 10 V, Qg = 71 nC - higher conduction loss and slower switching. | Requires heatsink and larger PCB area; unsuitable for high-density SMT designs or >200 kHz operation. | Select only when through-hole mounting, legacy compatibility, or cost sensitivity outweighs efficiency and size requirements. |
| DMTH10H015LPS-13 | PowerDI 5060-8 package, RDS(on) = 0.0015 Ω @ 10 V, but rated only for 100 V with 40 A ID - lower RDS(on) but reduced current headroom. | Better for ultra-low-loss 12–24 V systems; less margin for 48 V+ bus transients and surge currents. | Prefer for 12–24 V synchronous buck stages where minimal RDS(on) dominates; avoid for 48 V+ primary-side or inverter legs. |
Compared with IRF540NPBF, SIJ470DP-T1-GE3 delivers 4.8× lower RDS(on) and 2.5× lower Qg in a surface-mount package, enabling smaller magnetics and passive components. Against DMTH10H015LPS-13, it trades 5.7× higher RDS(on) for 46 % higher continuous current rating and superior avalanche ruggedness-making it more suitable for 48–96 V industrial inverters.
Availability
SIJ470DP-T1-GE3 is available at Aetrix Electronics and suitable for DC/AC inverters, synchronous rectifiers, and LED backlighting systems requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.
Supply support for SIJ470DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIJ470DP-T1-GE3 belongs to Vishay's ThunderFET® PowerPAK SO-8L family, engineered for high-current, high-frequency switching in space-constrained industrial and computing power supplies.
FAQ
What is the maximum junction temperature rating for SIJ470DP-T1-GE3?
The SIJ470DP-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table and validated across thermal transient impedance curves. The device maintains specified RDS(on) and switching parameters within this full range, making SIJ470DP-T1-GE3 suitable for under-hood automotive auxiliary systems and industrial motor drives with ambient temperatures up to 105 °C.
Does SIJ470DP-T1-GE3 support logic-level gate drive?
Yes, SIJ470DP-T1-GE3 supports logic-level gate drive with a guaranteed VGS(th) range of 2.3–3.5 V and RDS(on) = 0.0100 Ω at VGS = 7.5 V. This allows direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry, while maintaining low conduction loss in battery-powered and low-voltage control applications.
What is the thermal resistance from junction to case (RthJC) for SIJ470DP-T1-GE3?
The SIJ470DP-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.8 °C/W, with a maximum of 2.2 °C/W, measured from junction to the exposed drain pad. This value is specified in the Thermal Resistance Ratings table and enables accurate thermal modeling when the drain pad is soldered to a 1-in² copper area or attached to an external heatsink-critical for predicting die temperature in high-power inverters.
Is SIJ470DP-T1-GE3 suitable for synchronous rectification in isolated DC/DC converters?
Yes, SIJ470DP-T1-GE3 is explicitly listed for synchronous rectification in its Applications section. Its low RDS(on), fast body diode (trr = 44–85 ns), and low Qrr (67–130 nC) minimize reverse recovery losses and enable efficient replacement of Schottky diodes in secondary-side regulation, especially in 12–48 V output converters delivering >30 A.
What does the "-GE3" suffix indicate in SIJ470DP-T1-GE3?
The "-GE3" suffix in SIJ470DP-T1-GE3 denotes Vishay's green, lead (Pb)-free, and halogen-free packaging standard compliant with RoHS Directive 2011/65/EU and JEDEC JS709C. It confirms that the PowerPAK SO-8L package uses matte tin plating and halogen-free molding compound, with no exemptions applied-ensuring full environmental compliance for export and industrial deployment.
SIJ470DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 58.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2050 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ470DP-T1-GE3 FAQ
1.How can I place an order for SIJ470DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ470DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ470DP-T1-GE3 reliable?
The price and inventory of SIJ470DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ470DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ470DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ470DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ470DP-T1-GE3?
SIJ470DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ470DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ470DP-T1-GE3?
For technical support, including SIJ470DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ470DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ470DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ470DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ470DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ470DP-T1-GE3?
All SIJ470DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ470DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ470DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ470DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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