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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ478DP-T1-GE3

Name: SIJ478DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ478DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ478DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ478DP-T1-GE3.pdf

Description:: MOSFET N-CH 80V 60A PPAK SO-8

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Product details

Overview

SIJ478DP-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8L package, delivering R_DS(on) = 8.0 mΩ at V_GS = 10 V, 60 A continuous drain current at T_C = 25 °C, and 17.1 nC total gate charge - optimized for primary-side switching and synchronous rectification in high-efficiency DC/AC inverters and LED backlighting systems.

For engineers reviewing the SIJ478DP-T1-GE3 datasheet, SIJ478DP-T1-GE3 pinout, SIJ478DP-T1-GE3 application, or SIJ478DP-T1-GE3 equivalent, key selection criteria include its 80 V V_DS rating, low R_DS(on) at 4.5 V drive, 100 % R_g and UIS tested reliability, and thermal resistance of 1.5 °C/W (junct-to-case), critical for thermally constrained board-level designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: typical C_iss = 1855 pF, C_oss = 950 pF, and Q_gd = 7.3 nC enable efficient hard-switched operation up to 100 kHz. Its gate threshold voltage (V_GS(th) = 1.4–2.6 V) supports logic-level and standard 5–10 V gate drive compatibility.

The device integrates a robust body diode with t_rr = 38–75 ns and Q_rr = 36–70 nC, enabling reliable synchronous rectification without external Schottky diodes. Thermal design is supported by R_thJC = 1.5 °C/W (max 2.0 °C/W) and R_thJA = 20–25 °C/W (1" × 1" FR4), validated under pulsed and steady-state conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports primary-side switching in 48 V input DC/AC inverters and 60 V bus LED drivers without derating.
R_DS(on) max @ V_GS = 10 V	8.0 mΩ - enables <1 W conduction loss at 40 A, reducing heatsink requirements in high-current SMPS stages.
Continuous I_D @ T_C = 25 °C	60 A - sustains full-load operation in compact synchronous buck converters and half-bridge inverters with active cooling.
Q_g typ. @ V_GS = 4.5 V	17.1 nC - ensures fast turn-on with low gate drive power, compatible with common PWM controllers like UCC27531.
Body diode t_rr	38–75 ns - minimizes reverse recovery losses during commutation in synchronous rectifier topologies.
R_thJC max	2.0 °C/W - allows direct thermal coupling to copper planes or heatsinks for junction temperature control below 150 °C.
V_GS(th)	1.4–2.6 V - guarantees turn-on with 3.3 V or 5 V logic-level drivers, eliminating need for level-shifting circuitry.

Pinout & Package

SIJ478DP-T1-GE3 uses the leadless PowerPAK® SO-8L single-package (5.13 mm × 6.15 mm footprint), with exposed drain pad on bottom side for optimal thermal conduction. The package is RoHS-compliant, halogen-free, and rated for peak reflow at 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection - six parallel pins reduce source inductance and improve current sharing in high-di/dt applications.
5	Gate (G)	Control input - low R_g (0.5–2.0 Ω) enables stable gate drive with minimal ringing in hard-switched topologies.
6	Drain (D)	Main power output - large copper-exposed bottom pad serves as primary thermal and current path to PCB ground plane.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (≈137 mΩ·nC), optimizing efficiency in high-frequency switching.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy handling (E_AS = 45 mJ), critical for unclamped inductive loads.
Low V_GS(th) variation	ΔV_GS(th)/T_J = –6.1 mV/°C maintains stable turn-on timing across –55 to +150 °C operating range.
Optimized body diode	Q_rr = 36–70 nC and soft recovery minimize EMI and voltage overshoot during freewheeling in synchronous rectifiers.
PowerPAK® SO-8L thermal design	Exposed drain pad reduces R_thJC to 1.5 °C/W, enabling >50 W dissipation with minimal PCB copper area.

Applications

Primary Side Switching	Synchronous Rectification
Use Scenario: High-efficiency flyback or LLC resonant converter in telecom power supplies with 36–60 V input. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer primary winding. Use Value: Low R_DS(on) (8.0 mΩ) and fast switching (t_f = 7–14 ns) reduce conduction and switching losses, improving full-load efficiency by ≥1.2 % vs. legacy 12 mΩ MOSFETs.	Use Scenario: Secondary-side rectification in isolated DC/DC converters for server VRMs and industrial PLCs. IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing Schottky diode in forward/flyback secondary circuits. Use Value: Body diode t_rr ≤ 75 ns and low V_SD (0.76 V) cut reverse recovery losses and forward drop, raising light-load efficiency by up to 3.5 %.
DC/AC Inverters	LED Backlighting
Use Scenario: Half-bridge stage in solar microinverters converting 40–80 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-current, high-voltage switching element in bridge leg with gate-driven dead-time control. Use Value: 80 V V_DS rating and 150 A pulsed current (I_DM) support safe operation during grid-synchronization transients and overvoltage events.	Use Scenario: Constant-current dimming stage in LCD TV backlight drivers using boost+linear hybrid topology. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current up to 10 A per channel. Use Value: Logic-level V_GS(th) (1.4–2.6 V) enables direct drive from MCU GPIOs, eliminating gate driver ICs and reducing BOM count by one component.

Primary Side Switching

Synchronous Rectification

Use Scenario: High-efficiency flyback or LLC resonant converter in telecom power supplies with 36–60 V input.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer primary winding.

Use Value: Low R_DS(on) (8.0 mΩ) and fast switching (t_f = 7–14 ns) reduce conduction and switching losses, improving full-load efficiency by ≥1.2 % vs. legacy 12 mΩ MOSFETs.

Use Scenario: Secondary-side rectification in isolated DC/DC converters for server VRMs and industrial PLCs.

IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing Schottky diode in forward/flyback secondary circuits.

Use Value: Body diode t_rr ≤ 75 ns and low V_SD (0.76 V) cut reverse recovery losses and forward drop, raising light-load efficiency by up to 3.5 %.

DC/AC Inverters

LED Backlighting

Use Scenario: Half-bridge stage in solar microinverters converting 40–80 V DC to 230 V AC.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element in bridge leg with gate-driven dead-time control.

Use Value: 80 V V_DS rating and 150 A pulsed current (I_DM) support safe operation during grid-synchronization transients and overvoltage events.

Use Scenario: Constant-current dimming stage in LCD TV backlight drivers using boost+linear hybrid topology.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current up to 10 A per channel.

Use Value: Logic-level V_GS(th) (1.4–2.6 V) enables direct drive from MCU GPIOs, eliminating gate driver ICs and reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 9.0 mΩ @ 10 V; larger SO-8 package (R_thJA = 62 °C/W); no UIS testing.	Higher thermal resistance limits power density; unsuitable for space-constrained synchronous rectifiers.	Select only if legacy SO-8 footprint compatibility is mandatory and thermal margin exceeds 25 °C.
DMN6075SFG-13	R_DS(on) = 7.5 mΩ @ 10 V; same PowerPAK SO-8L; Q_g = 20.5 nC; V_GS(th) = 1.0–2.5 V.	Lower threshold improves 3.3 V drive margin but higher Q_g increases gate drive loss at >500 kHz.	Prefer for ultra-low-voltage gate drive systems where t_rr and E_AS are less critical than turn-on speed.

Compared with IRF7470PBF and DMN6075SFG-13, SIJ478DP-T1-GE3 offers superior thermal performance (R_thJC = 1.5 °C/W), guaranteed UIS ruggedness, and balanced Q_g/R_DS(on) for mid-frequency (100–300 kHz) industrial power stages requiring reliability and layout efficiency.

Availability

SIJ478DP-T1-GE3 is available at Aetrix Electronics and suitable for primary-side switching, synchronous rectification, and DC/AC inverter applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SIJ478DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and thermal optimization.

The SIJ478DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8L family, engineered for high-current, high-voltage switching in space-constrained industrial and renewable energy systems where thermal management and avalanche reliability are critical.

FAQ

What is the maximum continuous drain current for SIJ478DP-T1-GE3 at case temperature of 70 °C?

The maximum continuous drain current for SIJ478DP-T1-GE3 is 52.7 A when the case temperature (T_C) is maintained at 70 °C. This rating reflects thermal derating due to reduced heat dissipation capability at elevated temperatures and is validated per Vishay's absolute maximum ratings table. SIJ478DP-T1-GE3 must be mounted on a thermally adequate PCB with sufficient copper area to sustain this current without exceeding T_J = 150 °C.

Does SIJ478DP-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SIJ478DP-T1-GE3 is fully specified for 4.5 V gate drive: R_DS(on) is guaranteed at ≤11.5 mΩ under V_GS = 4.5 V, ID = 10 A conditions. Its V_GS(th) range (1.4–2.6 V) ensures robust turn-on with standard 4.5 V logic outputs, making SIJ478DP-T1-GE3 suitable for MCU- or ASIC-driven synchronous rectifiers without gate boosting.

What is the thermal resistance from junction to case (R_thJC) for SIJ478DP-T1-GE3?

The maximum junction-to-case thermal resistance (R_thJC) for SIJ478DP-T1-GE3 is 2.0 °C/W, with a typical value of 1.5 °C/W. This low value is enabled by the exposed drain pad in the PowerPAK® SO-8L package, allowing efficient heat transfer directly to the PCB ground plane or heatsink - a key advantage over standard SO-8 devices with R_thJC > 3.5 °C/W.

Is SIJ478DP-T1-GE3 suitable for synchronous rectification in flyback converters?

Yes, SIJ478DP-T1-GE3 is explicitly recommended for synchronous rectification, with a fast body diode (t_rr = 38–75 ns) and low V_SD (0.76 V at 5 A). Its low Q_g (17.1 nC) and tight V_GS(th) tolerance allow precise timing control in self-driven or controller-synchronized flyback secondaries, directly improving efficiency over Schottky solutions.

What does "100 % R_g and UIS tested" mean for SIJ478DP-T1-GE3?

"100 % R_g and UIS tested" means every SIJ478DP-T1-GE3 unit undergoes production screening for gate resistance (R_g = 0.5–2.0 Ω) and unclamped inductive switching (UIS) stress, verifying ability to absorb 45 mJ avalanche energy without failure. This ensures field reliability in inductive load switching - a critical requirement not applied to commodity MOSFETs.

SIJ478DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1855 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ478DP-T1-GE3 FAQ

1.How can I place an order for SIJ478DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ478DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ478DP-T1-GE3 reliable?

The price and inventory of SIJ478DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ478DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ478DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ478DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ478DP-T1-GE3?

SIJ478DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ478DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ478DP-T1-GE3?

For technical support, including SIJ478DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ478DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ478DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ478DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ478DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ478DP-T1-GE3?

All SIJ478DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ478DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ478DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ478DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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