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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ4819DP-T1-GE3

Name: SIJ4819DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ4819DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ4819DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ4819DP-T1-GE3.pdf

Description:: P-CHANNEL 80-V (D-S) MOSFET POWE

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Product details

Overview

SIJ4819DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in PowerPAK® SO-8L package, rated for -80 V drain-source voltage, 0.0207 Ω R_DS(on) at V_GS = -10 V, and -46 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch or OR-ing device in battery-powered systems requiring low conduction loss and gate-drive simplicity without charge pump support.

For engineers reviewing the SIJ4819DP-T1-GE3 datasheet, SIJ4819DP-T1-GE3 pinout, SIJ4819DP-T1-GE3 application, or SIJ4819DP-T1-GE3 equivalent, key selection criteria include its -80 V rating, 0.0296 Ω R_DS(on) at -4.5 V gate drive, 19.3 nC total gate charge, junction-to-case thermal resistance of 1.4 °C/W, and suitability for adapter/charger switching and battery protection circuits.

Technical Context

This MOSFET uses Vishay's TrenchFET® Gen IV process to achieve low R_DS(on) with robust avalanche capability (E_AS = 80 mJ) and 100 % R_g and UIS testing. Its gate threshold voltage range (-1.4 V to -2.6 V) enables reliable turn-on with standard logic-level negative gate drive.

The PowerPAK SO-8L leadless package provides enhanced thermal performance over SO-8: R_thJC = 1.4 °C/W (typical), enabling high-current operation with minimal heatsinking. The exposed-drain copper pad on the bottom surface ensures efficient heat transfer to the PCB ground plane.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-80 V - Maximum blocking voltage for high-side or reverse-polarity protection in 48 V and 60 V systems
R_DS(on) @ V_GS = -10 V	0.0207 Ω - Enables <1 W conduction loss at 7 A, reducing thermal stress in compact adapters
R_DS(on) @ V_GS = -4.5 V	0.0296 Ω - Supports direct microcontroller-driven switching without level-shifting or charge pump circuitry
Q_g (typ.)	19.3 nC - Low gate charge allows fast switching with modest driver strength, minimizing switching loss
I_D (continuous, T_C = 25 °C)	-46 A - Sustains high pulsed loads in motor drive control and OR-ing applications
R_thJC (max.)	1.7 °C/W - Enables >70 W power dissipation with moderate case-to-heatsink thermal interface
E_AS	80 mJ - Withstands single-pulse inductive energy during fault events in motor or solenoid drivers

Pinout & Package

SIJ4819DP-T1-GE3 is housed in a PowerPAK® SO-8L (leadless) surface-mount package measuring 5.13 mm × 6.15 mm × 1.07 mm, with an exposed drain pad on the bottom side for thermal and electrical connection to PCB ground.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source terminals tied internally; provide low-inductance return path and thermal conduction to PCB
5	Gate (G)	Control input; requires negative voltage relative to source to turn on; 0.6–2.7 Ω gate resistance limits ringing
6	Drain (D)	High-side switching node; connected to exposed copper pad on bottom for thermal management and current handling

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-efficiency switching at 100 kHz–1 MHz frequencies
No charge pump required	Enables direct -4.5 V gate drive from microcontrollers or PMICs, simplifying layout and reducing BOM count
100 % R_g and UIS tested	Guarantees gate robustness and unclamped inductive switching reliability across production lots
Exposed drain thermal pad	Reduces R_thJC to 1.4 °C/W (typ.), allowing >73 W power dissipation with adequate PCB copper area
Pb-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting environmentally aligned manufacturing

Applications

Adapter and Charger Switch	Battery Protection Circuit
Use Scenario: High-side switching in USB-C PD adapters and multi-voltage laptop chargers to enable/disconnect output rails. IC Role / Device Role / Timing Role: P-channel load switch controlling power delivery path between AC/DC converter and output connector. Use Value: Low 0.0296 Ω R_DS(on) at -4.5 V gate drive minimizes dropout and thermal rise under 5–10 A load conditions.	Use Scenario: Reverse-polarity and overcurrent protection in portable medical devices and power tools with removable Li-ion packs. IC Role / Device Role / Timing Role: Back-to-back configuration with another P-MOSFET to block reverse current and isolate faulty cells. Use Value: -80 V V_DS rating accommodates 20-cell Li-ion stacks (up to ~84 V), while 80 mJ E_AS withstands fuseless short-circuit transients.
OR-ing Controller	Motor Drive Control
Use Scenario: Redundant power supply OR-ing in telecom rectifiers and server PSUs to maintain uptime during single-rail failure. IC Role / Device Role / Timing Role: Active diode replacement in ideal diode controllers, replacing Schottky diodes to reduce forward drop. Use Value: 0.0207 Ω R_DS(on) cuts conduction loss by >75 % vs. 40 V Schottky, improving system efficiency by 1–2 % at full load.	Use Scenario: H-bridge high-side switch in 24 V BLDC motor drivers for industrial automation and robotics. IC Role / Device Role / Timing Role: Upper-leg switching element in half-bridge topology, commutated with synchronous gate drivers. Use Value: 19.3 nC Q_g supports 200 kHz PWM with <1 μs dead-time, minimizing shoot-through risk and torque ripple.

Adapter and Charger Switch

Battery Protection Circuit

Use Scenario: High-side switching in USB-C PD adapters and multi-voltage laptop chargers to enable/disconnect output rails.

IC Role / Device Role / Timing Role: P-channel load switch controlling power delivery path between AC/DC converter and output connector.

Use Value: Low 0.0296 Ω R_DS(on) at -4.5 V gate drive minimizes dropout and thermal rise under 5–10 A load conditions.

Use Scenario: Reverse-polarity and overcurrent protection in portable medical devices and power tools with removable Li-ion packs.

IC Role / Device Role / Timing Role: Back-to-back configuration with another P-MOSFET to block reverse current and isolate faulty cells.

Use Value: -80 V V_DS rating accommodates 20-cell Li-ion stacks (up to ~84 V), while 80 mJ E_AS withstands fuseless short-circuit transients.

OR-ing Controller

Motor Drive Control

Use Scenario: Redundant power supply OR-ing in telecom rectifiers and server PSUs to maintain uptime during single-rail failure.

IC Role / Device Role / Timing Role: Active diode replacement in ideal diode controllers, replacing Schottky diodes to reduce forward drop.

Use Value: 0.0207 Ω R_DS(on) cuts conduction loss by >75 % vs. 40 V Schottky, improving system efficiency by 1–2 % at full load.

Use Scenario: H-bridge high-side switch in 24 V BLDC motor drivers for industrial automation and robotics.

IC Role / Device Role / Timing Role: Upper-leg switching element in half-bridge topology, commutated with synchronous gate drivers.

Use Value: 19.3 nC Q_g supports 200 kHz PWM with <1 μs dead-time, minimizing shoot-through risk and torque ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 0.022 Ω @ -10 V; Q_g = 26 nC; TO-252 package; R_thJA = 62 °C/W	Higher thermal resistance limits power density; unsuitable for space-constrained adapter designs	Prefer SIJ4819DP-T1-GE3 where PCB area and thermal performance are critical
DMT6009LSD-13	R_DS(on) = 0.021 Ω @ -10 V; Q_g = 22.5 nC; PowerPAK 1212-8 package; R_thJC = 2.0 °C/W	Larger footprint (3.05 mm × 3.05 mm) and higher R_thJC reduce current density vs. PowerPAK SO-8L	SIJ4819DP-T1-GE3 offers superior thermal efficiency and smaller board area in high-current load switches

Compared with IRF7478PBF and DMT6009LSD-13, SIJ4819DP-T1-GE3 delivers the lowest R_DS(on) × R_thJC product (0.0296 Ω × 1.4 °C/W = 0.041), enabling higher sustained current in thermally constrained layouts without forced air cooling.

Availability

SIJ4819DP-T1-GE3 is available at Aetrix Electronics and suitable for adapter and charger switch, battery and circuit protection, and OR-ing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIJ4819DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and miniaturized packaging.

The SIJ4819DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV P-channel MOSFET family, engineered specifically for high-current, low-voltage-drop load switching in space- and thermally-constrained power systems.

FAQ

What is the maximum continuous drain current for SIJ4819DP-T1-GE3 at T_C = 70 °C?

The maximum continuous drain current for SIJ4819DP-T1-GE3 is -35.5 A when case temperature is maintained at 70 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and must be validated against actual PCB copper area and airflow. SIJ4819DP-T1-GE3 achieves this rating using its 1.4 °C/W typical junction-to-case thermal resistance.

Does SIJ4819DP-T1-GE3 require a charge pump for gate drive?

No, SIJ4819DP-T1-GE3 does not require a charge pump. Its gate threshold voltage range of -1.4 V to -2.6 V and low R_DS(on) of 0.0296 Ω at V_GS = -4.5 V allow full enhancement with standard negative logic-level drive. This eliminates external charge pump circuitry, reducing cost and board space in adapter and battery protection designs using SIJ4819DP-T1-GE3.

What is the safe operating area (SOA) limitation for SIJ4819DP-T1-GE3 at DC and 10 ms pulse widths?

At DC, SIJ4819DP-T1-GE3 SOA is limited by R_DS(on) and thermal resistance; at 10 ms, it is limited by peak current (I_DM = -125 A) and avalanche energy (E_AS = 80 mJ). The datasheet SOA curve shows V_DS ≤ 40 V at I_D = -46 A for DC, and V_DS ≤ 20 V at I_D = -100 A for 10 ms. These boundaries ensure reliable operation of SIJ4819DP-T1-GE3 under transient overload conditions.

How is thermal performance of SIJ4819DP-T1-GE3 affected by PCB layout?

Thermal performance of SIJ4819DP-T1-GE3 depends critically on PCB copper area under the exposed drain pad: minimum recommended pad size is 4.061 mm × 2.715 mm with thermal vias to inner ground planes. With optimal layout, R_thJA improves from 25 °C/W (typical) to <15 °C/W, enabling >5 A continuous current at ambient 70 °C. Poor layout degrades SIJ4819DP-T1-GE3 reliability and current capacity.

Is SIJ4819DP-T1-GE3 suitable for use in automotive applications?

SIJ4819DP-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. While its -55 °C to +150 °C operating temperature range meets under-hood ambient requirements, Vishay does not specify automotive-grade qualification, reliability testing, or PPAP documentation for SIJ4819DP-T1-GE3. For automotive use, consult Vishay's AEC-Q101-qualified P-channel alternatives.

SIJ4819DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Ta), 44.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3420 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 73.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ4819DP-T1-GE3 FAQ

1.How can I place an order for SIJ4819DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ4819DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ4819DP-T1-GE3 reliable?

The price and inventory of SIJ4819DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ4819DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ4819DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ4819DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ4819DP-T1-GE3?

SIJ4819DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ4819DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ4819DP-T1-GE3?

For technical support, including SIJ4819DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ4819DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ4819DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ4819DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ4819DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ4819DP-T1-GE3?

All SIJ4819DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ4819DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ4819DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ4819DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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