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Vishay Siliconix SIJ482DP-T1-GE3
- Part No.:
- SIJ482DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ482DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 80V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,482
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Product details
Overview
SIJ482DP-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8L package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 6.2 mΩ at VGS = 10 V and capable of operation with 5 V gate drive - used as primary-side switch in high-efficiency DC/DC converters.
For engineers reviewing the SIJ482DP-T1-GE3 datasheet, SIJ482DP-T1-GE3 pinout, SIJ482DP-T1-GE3 application, or SIJ482DP-T1-GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.3 °C/W), avalanche energy rating (EAS = 45 mJ), body diode reverse recovery time (trr = 46 ns), gate charge (Qg = 47 nC typ.), and lead-free/halogen-free compliance per ordering code.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its 80 V VDS rating supports 48 V input bus applications, while the 6.2 mΩ RDS(on) at 10 V enables high-current synchronous rectification without external gate drivers.
The PowerPAK® SO-8L package features exposed copper drain pads on the bottom side for enhanced thermal transfer to PCB copper planes, with RthJA = 20 °C/W (t ≤ 10 s) and RthJC = 1.3 °C/W under steady-state conditions - critical for thermally constrained industrial and telecom power designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports 48 V nominal input systems with 25 % voltage margin for transients and ripple. |
| RDS(on) max @ VGS = 10 V | 6.2 mΩ - enables <1.2 W conduction loss at 40 A, reducing heatsink requirements in high-current DC/DC stages. |
| ID continuous @ TC = 25 °C | 60 A - allows single-device implementation for >300 W isolated flyback or LLC primary switches. |
| Qg typ. | 47 nC - determines gate driver power requirement; compatible with standard 1 A peak gate drivers at 500 kHz switching. |
| EAS | 45 mJ - ensures robustness against inductive switching stress in non-resonant topologies without snubbers. |
| trr (body diode) | 46 ns - minimizes reverse recovery losses during synchronous rectification in secondary-side FETs. |
| RthJC | 1.3 °C/W - enables direct thermal coupling to inner-layer copper or thermal vias for junction temperature control below 125 °C. |
Pinout & Package
Package: PowerPAK® SO-8L - leadless surface-mount package with exposed copper drain pad on bottom side; dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H); RoHS-compliant, halogen-free, and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection for internal die; electrically tied to bottom-side thermal pad via internal metal layers. |
| 5 | Gate (G) | Control terminal; requires <2.7 V threshold voltage and 47 nC total charge for full enhancement. |
| 6 | Drain (D) | Main power terminal; connected directly to exposed copper pad on bottom for low-inductance, high-current return path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 6.2 mΩ RDS(on) in SO-8L footprint - 30 % lower on-resistance than planar equivalents at same voltage class. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (0.4–2.2 Ω) and unclamped inductive switching reliability up to 30 A, 80 V, 45 mJ. |
| 5 V gate drive capability | Enables direct interface with 5 V microcontrollers or logic-level PWM controllers without level-shifting circuitry. |
| Exposed drain pad | Provides <1.3 °C/W junction-to-case thermal path - reduces thermal impedance by 4× vs. standard SO-8. |
Applications
| DC/DC Primary Side Switch | Synchronous Rectification |
|---|---|
|
Use Scenario: High-efficiency 48 V-to-12 V isolated DC/DC converter in telecom power shelf. IC Role / Device Role / Timing Role: Primary-side switching FET in active-clamp forward or flyback topology operating at 200–500 kHz. Use Value: 6.2 mΩ RDS(on) and 47 nC Qg minimize combined conduction and switching losses, enabling >95 % efficiency at full load. |
Use Scenario: Secondary-side synchronous rectifier in 12 V output stage of server VRM. IC Role / Device Role / Timing Role: Low-VDS N-channel FET replacing Schottky diode in LLC resonant converter. Use Value: 46 ns trr and 0.73 V VSD reduce reverse recovery loss and forward drop, improving light-load efficiency by 1.2 %. |
| High-Current Switching | Industrial Motor Drive Half-Bridge |
|
Use Scenario: 24 V battery-powered industrial actuator with 40 A peak load current. IC Role / Device Role / Timing Role: Low-side switching FET in H-bridge configuration controlled by isolated gate driver. Use Value: 60 A ID rating and 100 A IDM pulsed current support enable robust short-circuit withstand without derating. |
Use Scenario: Compact BLDC motor controller for HVAC fan module with space-constrained PCB layout. IC Role / Device Role / Timing Role: Upper-leg FET in half-bridge stage requiring fast turn-off and low Miller capacitance. Use Value: Crss = 100 pF and td(off) = 36 ns minimize shoot-through risk and improve PWM fidelity at 20 kHz commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 7.5 mΩ @ 10 V; Qg = 52 nC; TO-252 package; higher RthJA (62 °C/W). | Requires larger PCB area and heatsinking; less suitable for ultra-thin power modules. | Prefer when legacy TO-252 layout exists and thermal budget allows 1.5× higher RthJA. |
| IXTP50N10T | RDS(on) = 10 mΩ @ 10 V; TO-220 package; no 5 V drive guarantee; EAS = 32 mJ. | Limited to lower-frequency (<100 kHz) switching due to higher Qg and slower tr/tf. | Select only for cost-sensitive, non-high-frequency applications where board space permits through-hole mounting. |
Compared with IRF7470PBF and IXTP50N10T, SIJ482DP-T1-GE3 offers superior thermal performance (RthJC = 1.3 °C/W), lower gate charge, and guaranteed 5 V drive - making it optimal for compact, high-frequency, high-current DC/DC and motor drive designs where PCB real estate and thermal management are critical.
Availability
SIJ482DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial motor drives, and battery-powered actuators requiring stable component supply across multi-year production cycles.
Supply support for SIJ482DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIJ482DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8L family, engineered specifically for high-current, high-frequency DC/DC conversion and synchronous rectification in space-constrained industrial and communications equipment.
FAQ
What is the maximum continuous drain current rating for SIJ482DP-T1-GE3 at case temperature of 70 °C?
The SIJ482DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under sustained thermal conditions and assumes adequate PCB copper area for heat spreading. The device maintains RDS(on) stability across its full operating temperature range, ensuring predictable performance in thermally demanding environments.
Does SIJ482DP-T1-GE3 support gate drive voltages below 5 V?
The SIJ482DP-T1-GE3 is characterized for operation with 4.5 V gate drive (RDS(on) = 9.5 mΩ max), but its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.7 V - meaning partial enhancement occurs below 4.5 V. However, full saturation and minimal RDS(on) require ≥4.5 V; using <4.5 V risks increased conduction loss and thermal stress. SIJ482DP-T1-GE3 is not recommended for 3.3 V-only gate drive without validation.
What is the thermal resistance from junction to ambient for SIJ482DP-T1-GE3 under transient conditions?
For pulse durations ≤10 seconds, the SIJ482DP-T1-GE3 exhibits a typical junction-to-ambient thermal resistance (RthJA) of 20 °C/W, with a maximum of 25 °C/W. This value assumes mounting on a 1" × 1" FR4 board with 2 oz copper and standard soldering profile. The transient thermal impedance curve shows rapid improvement under short pulses - e.g., 5.2 °C/W effective impedance at 1 ms - enabling high peak power handling in burst-mode operation.
Is SIJ482DP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?
Yes, SIJ482DP-T1-GE3 is well-suited for synchronous rectification in LLC resonant converters due to its low RDS(on) (6.2 mΩ), fast body diode recovery (trr = 46 ns), and low Qgd/Qgs ratio (10.2 nC / 6.6 nC). These characteristics minimize dead-time losses and improve light-load efficiency. Its 80 V VDS rating provides sufficient margin for reflected output voltage spikes in 12 V and 24 V output designs using SIJ482DP-T1-GE3.
How does the PowerPAK® SO-8L package of SIJ482DP-T1-GE3 differ from standard SO-8 in thermal performance?
The PowerPAK® SO-8L package of SIJ482DP-T1-GE3 replaces the plastic mold compound on the bottom side with an exposed copper drain pad, reducing junction-to-case thermal resistance to 1.3 °C/W - over 4× better than standard SO-8 (typically 5–6 °C/W). This design eliminates thermal bottlenecks, allowing direct conduction into PCB copper planes. Unlike standard SO-8, SIJ482DP-T1-GE3 requires no thermal pad cutout and achieves lower steady-state junction temperatures under identical power dissipation.
SIJ482DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2425 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 69.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ482DP-T1-GE3 FAQ
1.How can I place an order for SIJ482DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ482DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ482DP-T1-GE3 reliable?
The price and inventory of SIJ482DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ482DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ482DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ482DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ482DP-T1-GE3?
SIJ482DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ482DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ482DP-T1-GE3?
For technical support, including SIJ482DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ482DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ482DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ482DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ482DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ482DP-T1-GE3?
All SIJ482DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ482DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ482DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ482DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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