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Vishay Siliconix SIJ484DP-T1-GE3
- Part No.:
- SIJ484DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ484DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,265
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Product details
Overview
SIJ484DP-T1-GE3 from Vishay Siliconix is a N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® SO-8L Single package, with RDS(on) = 0.0063 Ω at VGS = 10 V, 35 A continuous drain current (package-limited), and 13.7 nC total gate charge. It serves as a high-side switch in DC/DC converters requiring low conduction loss and fast switching.
For engineers reviewing the SIJ484DP-T1-GE3 datasheet, SIJ484DP-T1-GE3 pinout, SIJ484DP-T1-GE3 application, or SIJ484DP-T1-GE3 equivalent, key selection criteria include its 30-V VDS, 0.0063 Ω on-resistance at 10 V drive, 3.4 °C/W junction-to-case thermal resistance, and halogen-free RoHS-compliant construction.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low RDS(on) and optimized gate charge for high-efficiency synchronous rectification and high-side switching. Its 100 % Rg and UIS testing ensures robustness in power conversion circuits under transient stress.
The device operates with VGS(th) between 1.2 V and 2.5 V and supports gate drive down to 4.5 V (RDS(on) = 0.0082 Ω), enabling compatibility with 5-V and 3.3-V controller outputs. Thermal performance is characterized by RthJC = 3.4 °C/W (typ.) and RthJA = 20 °C/W (t ≤ 10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12-V and 24-V input DC/DC stages |
| RDS(on) @ VGS = 10 V | 0.0063 Ω - Enables <19 mW conduction loss at 35 A, critical for high-current POL converters |
| ID (continuous) | 35 A - Package-limited rating; defines maximum steady-state current without heatsink |
| Qg (total) | 13.7 nC - Low gate charge reduces driver power and switching transition time in high-frequency operation |
| RthJC | 3.4 °C/W - Enables direct thermal coupling to PCB copper or heatsink for >20 W power dissipation |
| VGS(th) | 1.2–2.5 V - Ensures reliable turn-on with standard logic-level gate drivers |
| Ciss | 1600 pF - Input capacitance impacts gate drive loop stability and Miller effect in hard-switched topologies |
Pinout & Package
PowerPAK® SO-8L Single is a leadless surface-mount package measuring 6.15 mm × 5.13 mm × 1.0 mm, with exposed drain paddle on bottom for enhanced thermal performance. The package has 8 terminals, all on perimeter, with no leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; requires low-impedance path to minimize switching losses |
| 2 (S) | Source | Reference node for gate drive and current sensing; connects to power ground or low-side return path |
| 3 (S) | Source | Second source connection; paralleled internally to reduce source inductance and improve current sharing |
| 4 (S) | Source | Third source connection; provides additional low-inductance return path for high di/dt applications |
| 5 (D) | Drain | Main power output node; electrically connected to exposed copper paddle for thermal and current conduction |
| 6 (D) | Drain | Second drain connection; tied to same internal drain node and paddle for lower parasitic inductance |
| 7 (D) | Drain | Third drain connection; enhances current spreading and thermal transfer from die to PCB |
| 8 (G) | Gate | Secondary gate terminal; used for Kelvin gate sensing or dual-drive configurations to suppress Miller ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency DC/DC efficiency |
| 100 % Rg tested | Ensures consistent gate resistance across production lots, critical for predictable switching timing |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events common in buck converter freewheeling |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and automotive end equipment |
| Exposed drain paddle | Reduces RthJC to 3.4 °C/W, enabling >27 W power dissipation with minimal external heatsinking |
Applications
| High-Efficiency Synchronous Buck Converter | 12-V Automotive DC/DC Module |
|---|---|
Use Scenario: Primary high-side switch in a 400-kHz, 12-V input to 1.2-V/30-A output VRM for FPGA or ASIC core supply. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; duty cycle modulated by PWM controller. Use Value: 0.0063 Ω RDS(on) limits conduction loss to <6.6 W at full load, while 13.7 nC Qg enables clean 20-ns rise/fall times with 1-Ω gate resistor. | Use Scenario: High-side switch in a 12-V to 5-V/15-A automotive body control module power rail. IC Role / Device Role / Timing Role: Main switching element in a compact, thermally constrained buck regulator operating in ambient up to 85 °C. Use Value: 3.4 °C/W RthJC allows direct mounting to 2-oz copper thermal pad, maintaining TJ < 125 °C at full load without forced air. |
| Industrial PLC I/O Power Distribution | Server Point-of-Load Regulator |
Use Scenario: Hot-swap and overcurrent protection switch for 24-V fieldbus I/O channel in programmable logic controller. IC Role / Device Role / Timing Role: Load switch enabling controlled inrush limiting and fault isolation via gate-controlled turn-on/turn-off. Use Value: 30-V VDS headroom accommodates 24-V nominal + transients; 100 % UIS rating ensures survival during cable-disconnect events. | Use Scenario: High-current phase in a multiphase 48-V to 0.8-V server CPU VR with >100-A total output. IC Role / Device Role / Timing Role: One of multiple paralleled high-side switches per phase, driven synchronously for interleaved operation. Use Value: Multiple source/drain terminals reduce package parasitics, improving current sharing accuracy and reducing EMI in multi-phase layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0055 Ω @ 10 V, but larger SO-8 package (RthJA = 62 °C/W); no Kelvin gate terminals | Higher thermal resistance limits usable current in space-constrained PCBs; less suitable for >200 kHz switching | Choose IRF7470PBF only if board layout allows larger thermal pad area and lower switching frequency suffices. |
| DMN3025LSD-13 | Same PowerPAK SO-8L footprint; RDS(on) = 0.0025 Ω @ 10 V but rated only for 25 A continuous (package-limited) | Lower on-resistance improves efficiency at light loads, but 25-A limit restricts peak current capability vs. SIJ484DP-T1-GE3's 35-A rating | Prefer DMN3025LSD-13 when ultra-low RDS(on) dominates over current capacity; verify thermal margin at full load. |
Compared with IRF7470PBF and DMN3025LSD-13, SIJ484DP-T1-GE3 uniquely balances 35-A current capability, 0.0063 Ω on-resistance, and Kelvin-source/gate terminals in a thermally optimized 6.15 mm × 5.13 mm footprint-making it optimal for high-density, high-current DC/DC phases where layout area and thermal management are co-constrained.
Availability
SIJ484DP-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, automotive body electronics, and industrial PLC power distribution requiring stable component supply and long-term manufacturability.
Supply support for SIJ484DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiJ484DP product line delivers high-current, low-RDS(on) TrenchFET® MOSFETs optimized for high-frequency, high-density DC/DC conversion in computing, automotive, and industrial systems.
FAQ
What is the maximum continuous drain current rating for SIJ484DP-T1-GE3?
The SIJ484DP-T1-GE3 has a continuous drain current rating of 35 A at TC = 25 °C, limited by package thermal capacity-not silicon die capability. At TC = 70 °C, the rating remains 35 A, but at TA = 25 °C it drops to 21.5 A due to higher junction-to-ambient thermal resistance. This package-limited rating is confirmed in the Absolute Maximum Ratings table of Vishay document 64812.
Does SIJ484DP-T1-GE3 support 4.5-V gate drive?
Yes, SIJ484DP-T1-GE3 is fully specified for 4.5-V gate drive: RDS(on) = 0.0082 Ω (max) at VGS = 4.5 V and ID = 7 A, and VGS(th) ranges from 1.2 V to 2.5 V. Its trench-gate design ensures strong enhancement-mode behavior and low threshold variation across temperature, making it compatible with 5-V and 3.3-V controller outputs without level-shifting.
What is the thermal resistance from junction to case for SIJ484DP-T1-GE3?
The SIJ484DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance RthJC of 3.4 °C/W, with a maximum of 4.5 °C/W under steady-state conditions. This value is measured from the silicon junction to the exposed drain paddle and is critical for calculating maximum power dissipation when mounted to a heatsink or thermal pad-enabling >27 W dissipation with proper PCB copper area.
Is SIJ484DP-T1-GE3 suitable for synchronous rectification?
Yes, SIJ484DP-T1-GE3 is well-suited for synchronous rectification due to its low RDS(on) (0.0063 Ω @ 10 V), fast switching parameters (tr = 9 ns, tf = 8 ns), and integrated body diode with VSD = 0.75–1.1 V at IS = 3 A. Its 100 % UIS testing further validates robustness during reverse recovery transitions in buck and LLC topologies.
What does the "-GE3" suffix indicate in SIJ484DP-T1-GE3?
Per Vishay's ordering nomenclature, the "-GE3" suffix in SIJ484DP-T1-GE3 denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. It also specifies tape-and-reel packaging (T1) and confirms the part meets Vishay's green material standards without compromising electrical or thermal performance.
SIJ484DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 27.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ484DP-T1-GE3 FAQ
1.How can I place an order for SIJ484DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ484DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ484DP-T1-GE3 reliable?
The price and inventory of SIJ484DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ484DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ484DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ484DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ484DP-T1-GE3?
SIJ484DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ484DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ484DP-T1-GE3?
For technical support, including SIJ484DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ484DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ484DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ484DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ484DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ484DP-T1-GE3?
All SIJ484DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ484DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ484DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ484DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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