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Vishay Siliconix SIJ494DP-T1-GE3
- Part No.:
- SIJ494DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ494DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 150V 36.8A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,350
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Product details
Overview
SIJ494DP-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) MOSFET in PowerPAK® SO-8L Single package, delivering RDS(on) = 0.0232 Ω at VGS = 10 V, 36.8 A continuous drain current at TC = 25 °C, and 16.1 nC total gate charge - optimized for high-efficiency primary-side switching in DC/AC inverters and synchronous rectification.
For engineers reviewing the SIJ494DP-T1-GE3 datasheet, SIJ494DP-T1-GE3 pinout, SIJ494DP-T1-GE3 application, or SIJ494DP-T1-GE3 equivalent, this part supports critical design decisions involving high-current, high-voltage switching with ThunderFET®-optimized RDS(on)/Qg/Qoss trade-offs, 100% Rg and UIS testing, and lead-free/halogen-free compliance.
Technical Context
This MOSFET employs ThunderFET® technology to balance conduction loss (RDS(on) = 0.0232 Ω @ 10 V), switching speed (Qg = 16.1 nC, Qgd = 6.7 nC), and output capacitance (Coss = 250 pF @ 75 V), enabling efficient operation in hard-switched topologies up to 150 V.
It features a robust body diode with trr = 103 ns (typ.) and Qrr = 370 nC (typ.) at IF = 15 A, dI/dt = 100 A/μs, and is rated for single-pulse avalanche energy EAS = 45 mJ - supporting reliable operation under transient overvoltage conditions in inverter and SMPS primary stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports primary-side switching in 100–120 VAC and 200–300 VDC bus applications without derating. |
| RDS(on) | 0.0232 Ω @ VGS = 10 V - enables <1 W conduction loss at 20 A, reducing thermal load in compact power stages. |
| ID (cont.) | 36.8 A @ TC = 25 °C - sustains high-current loads in LED backlighting drivers and motor control half-bridges. |
| Qg | 16.1 nC @ VGS = 7.5 V - allows fast turn-on with low gate drive power, suitable for 100–500 kHz PWM operation. |
| RthJC | 1.3 °C/W (typ.) - enables direct heatsinking to PCB copper or external heatsink, supporting >60 W power dissipation. |
| VGS(th) | 2.5–4.5 V - ensures clean logic-level turn-on with standard 5 V or 3.3 V gate drivers, avoiding partial enhancement. |
| EAS | 45 mJ - withstands inductive switching surges in DC/AC inverters without avalanche failure. |
Pinout & Package
SIJ494DP-T1-GE3 is housed in a surface-mount PowerPAK® SO-8L Single package (5.13 mm × 6.15 mm, 1.07 mm height), featuring exposed-drain thermal pad on bottom side for enhanced heat transfer. The package is leadless with copper-exposed drain terminals; solder fillet at tip not required for reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Source (S) | Common source connection across seven pins - lowers source inductance and improves current sharing in high-di/dt switching. |
| 5 | Gate (G) | Single gate input - compatible with standard MOSFET gate drivers; Rg = 0.4–2 Ω supports controlled edge rates. |
| Drain (D) | Exposed copper pad (bottom) | Primary thermal path and high-current drain node - must be connected to large PCB copper pour or heatsink for RthJC = 1.3 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® optimization | Simultaneous minimization of RDS(on), Qg, Qsw, and Qoss - delivers higher efficiency than standard TrenchFET® at 150 V class. |
| 100% Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress - critical for inverter reliability. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C - compliant for industrial, lighting, and consumer end equipment. |
| Low Qgd/Qg ratio | 6.7 nC / 16.1 nC ≈ 42% - reduces Miller plateau duration and improves immunity to dv/dt-induced false turn-on. |
| Body diode trr | 103 ns (typ.) - enables use in synchronous rectification without excessive reverse recovery loss or ringing. |
Applications
| Primary Side Switching | Synchronous Rectification |
|---|---|
Use Scenario: High-frequency flyback or LLC resonant converter primary switch operating from 300–400 VDC bus. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into transformer primary winding during PWM on-time. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >94% efficiency at 200 kHz. |
Use Scenario: Secondary-side rectification in isolated DC/DC converters replacing Schottky diodes. IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing passive diode during transformer reset phase. Use Value: Body diode trr = 103 ns and low VSD = 0.79 V minimize reverse recovery loss and forward drop, improving light-load efficiency. |
| DC/AC Inverters | LED Backlighting |
Use Scenario: Half-bridge leg in 1–5 kW solar microinverters or UPS output stage. IC Role / Device Role / Timing Role: High-current, high-voltage switching element in bridge topology handling bidirectional AC waveform synthesis. Use Value: 150 V rating and 36.8 A ID support 230 VAC RMS output with margin; EAS = 45 mJ handles inductive kickback. |
Use Scenario: Constant-current dimming switch in large-panel LCD TV or monitor LED backlight drivers. IC Role / Device Role / Timing Role: PWM-controlled series pass switch regulating current through LED strings. Use Value: Low RDS(on) limits thermal rise at 3–5 A per channel; PowerPAK SO-8L footprint fits tight board space constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6645TRPBF | RDS(on) = 0.022 Ω @ 10 V, but Qg = 22.5 nC - higher switching loss at >200 kHz. | Same PowerSO-8 package; slightly higher RthJA (28 °C/W vs. 25 °C/W). | Prefer SIJ494DP-T1-GE3 for high-frequency, low-Qg designs; IRF6645TRPBF suits lower-frequency, higher-current bias points. |
| DMTH1500UTS-13 | RDS(on) = 0.025 Ω @ 10 V, Qg = 15.2 nC - marginally higher RDS(on), slightly lower Qg. | PowerPAK 1212-8 package - larger footprint (3.1 mm × 3.1 mm) and different thermal pad layout. | Choose SIJ494DP-T1-GE3 for SO-8L compatibility and tighter thermal resistance; DMTH1500UTS-13 offers alternative sourcing if SO-8L supply is constrained. |
Compared with IRF6645TRPBF and DMTH1500UTS-13, SIJ494DP-T1-GE3 provides the best combination of low RDS(on), moderate Qg, and industry-standard SO-8L footprint - making it optimal for space-constrained, high-efficiency 150 V switching where thermal management and gate drive simplicity are prioritized.
Availability
SIJ494DP-T1-GE3 is available at Aetrix Electronics and suitable for DC/AC inverters, LED backlighting systems, and high-current switching applications requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.
Supply support for SIJ494DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.
The SIJ494DP-T1-GE3 belongs to Vishay's ThunderFET® family - engineered specifically for high-voltage, high-current switching in industrial power supplies, renewable energy inverters, and solid-state lighting drivers.
FAQ
What is the maximum continuous drain current for SIJ494DP-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SIJ494DP-T1-GE3 is 29.5 A when the case temperature (TC) is maintained at 70 °C. This rating reflects thermal derating due to reduced heat dissipation capability at elevated temperatures and is specified in the Absolute Maximum Ratings table. SIJ494DP-T1-GE3 maintains safe operation within its 150 °C junction limit under these conditions when mounted on appropriate PCB copper area or heatsink.
Does SIJ494DP-T1-GE3 support gate drive from a 5 V microcontroller?
Yes, SIJ494DP-T1-GE3 has a gate threshold voltage (VGS(th)) range of 2.5–4.5 V, ensuring full enhancement with a 5 V logic-level gate drive. Its RDS(on) remains low (0.0272 Ω @ VGS = 7.5 V), and the device is characterized for stable operation down to 5 V - making SIJ494DP-T1-GE3 suitable for direct MCU-driven switching in low-power inverters and LED drivers without level-shifting circuitry.
What is the thermal resistance from junction to case (RthJC) for SIJ494DP-T1-GE3?
The typical junction-to-case thermal resistance (RthJC) for SIJ494DP-T1-GE3 is 1.3 °C/W, with a maximum of 1.8 °C/W under steady-state conditions. This low value is enabled by the exposed-drain PowerPAK® SO-8L package, which provides a direct thermal path from the silicon die to the PCB copper or external heatsink - critical for managing >50 W power dissipation in compact layouts.
Is SIJ494DP-T1-GE3 suitable for synchronous rectification in isolated DC/DC converters?
Yes, SIJ494DP-T1-GE3 is explicitly listed for synchronous rectification in its Applications section. Its body diode exhibits trr = 103 ns (typ.) and Qrr = 370 nC (typ.), enabling clean commutation with minimal reverse recovery loss. Combined with low RDS(on) and fast turn-off (tf = 8 ns @ 10 V), SIJ494DP-T1-GE3 improves efficiency over Schottky diodes in 12–48 V output converters operating up to 500 kHz.
What does the "-GE3" suffix indicate in SIJ494DP-T1-GE3?
Within Vishay's ordering nomenclature, the "-GE3" suffix in SIJ494DP-T1-GE3 denotes lead (Pb)-free and halogen-free construction, compliant with RoHS Directive 2011/65/EU and JEDEC JS709C. It also indicates tape-and-reel packaging (T1) and green material formulation - confirming SIJ494DP-T1-GE3 meets environmental requirements for industrial, commercial, and consumer electronics without compromising electrical or thermal performance.
SIJ494DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 36.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 23.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1070 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 69.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ494DP-T1-GE3 FAQ
1.How can I place an order for SIJ494DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ494DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ494DP-T1-GE3 reliable?
The price and inventory of SIJ494DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ494DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ494DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ494DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ494DP-T1-GE3?
SIJ494DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ494DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ494DP-T1-GE3?
For technical support, including SIJ494DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ494DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ494DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ494DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ494DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ494DP-T1-GE3?
All SIJ494DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ494DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ494DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ494DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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