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Vishay Siliconix SIJ5623DP-T1-GE3
- Part No.:
- SIJ5623DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJ5623DP-T1-GE3.pdf
- Description:
- P-CHANNEL 60 V (D-S) MOSFET 150C
- Quantity:
- Payment:
- Shipping:
Inventory:8,975
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Product details
Overview
SIJ5623DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching and battery protection circuits, featuring -60 V VDS, 0.024 Ω RDS(on) at VGS = -10 V, 10.1 nC Qg (typ.), -26.1 A continuous drain current (TC = 25 °C), and PowerPAK® SO-8L package with exposed drain pad for thermal performance.
For engineers reviewing the SIJ5623DP-T1-GE3 datasheet, SIJ5623DP-T1-GE3 pinout, SIJ5623DP-T1-GE3 application, or SIJ5623DP-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance data (RthJC = 3.0 °C/W max), body diode characteristics (VSD = -0.81 V typ. at IS = -5 A), and validated alternative parts for industrial power management designs.
Technical Context
This device operates as a single P-channel MOSFET in enhancement mode, requiring negative gate drive relative to source. Its low RDS(on) × Qg figure-of-merit enables fast switching with minimal conduction and gate-drive losses in DC-DC converters and hot-swap circuits.
The PowerPAK® SO-8L package integrates an exposed copper drain pad on the bottom surface for direct thermal coupling to PCB copper, supporting junction-to-case thermal resistance of 3.0 °C/W (typical) and enabling high-current operation without external heatsinks under controlled board layout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum drain-source blocking voltage; supports 48 V system bus protection and reverse polarity safeguarding. |
| RDS(on) @ VGS = -10 V | 0.024 Ω max - Enables ≤0.65 W conduction loss at -26.1 A, critical for thermally constrained battery disconnect applications. |
| RDS(on) @ VGS = -4.5 V | 0.046 Ω max - Ensures reliable turn-on with standard logic-level gate drivers (e.g., microcontroller GPIOs). |
| Qg @ VGS = -4.5 V | 10.1 nC typ. - Low gate charge reduces driver power demand and switching transition time in high-frequency load switches. |
| ID (continuous, TC = 25 °C) | -26.1 A - Sustains full-rated current when mounted on ≥1"×1" FR4 with 2 oz copper and thermal vias under steady-state conditions. |
| VGS(th) | -1.4 V to -2.6 V - Tight threshold range ensures predictable turn-on behavior across temperature and process variation. |
| RthJC | 3.0 °C/W typical - Confirms efficient heat transfer from die to PCB via exposed drain pad, enabling compact thermal design. |
Pinout & Package
Package: PowerPAK® SO-8L - leadless, surface-mount package with 5.13 mm × 6.15 mm footprint and exposed drain pad on bottom side for enhanced thermal dissipation. Compliant with JEDEC MO-263AB outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Internally connected source terminals; provide low-inductance return path and parallel current handling for high-current switching. |
| 5 | Gate (G) | Control input; requires negative voltage relative to source to turn on; gate resistance Rg = 0.4–1.7 Ω limits ringing during fast switching. |
| 6 | Drain (D) | Main power terminal; electrically tied to exposed copper pad on bottom surface-must be soldered to large PCB copper area for thermal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × Qg FOM | 0.242 Ω·nC (0.024 Ω × 10.1 nC) - minimizes combined conduction and switching losses in high-duty-cycle load switches. |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| Exposed drain pad | Enables direct thermal path to PCB; achieves RthJC = 3.0 °C/W typical-critical for maintaining TJ < 150 °C in space-constrained designs. |
| VSD = -0.81 V (typ.) | Low forward voltage of integrated body diode reduces reverse recovery losses and improves efficiency in bidirectional current paths. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709E requirements-ensures compliance in consumer, industrial, and automotive supply chains. |
Applications
| Battery Protection Circuit | Hot-Swap Controller |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in portable medical devices and handheld test equipment using Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power rail; activated only when battery voltage and polarity are valid. Use Value: -60 V rating withstands load-dump transients; 0.024 Ω RDS(on) limits voltage drop to <0.63 V at 26 A, preserving runtime and minimizing thermal rise. |
Use Scenario: Controlled insertion of pluggable modules into backplane systems with live power rails (e.g., telecom line cards). IC Role / Device Role / Timing Role: Inrush current limiter placed between input supply and downstream capacitance; soft-start enabled via gate resistor network. Use Value: Low Qg (10.1 nC) allows precise gate timing control; -26.1 A rating handles peak inrush without derating under 70 °C ambient. |
| Motor Drive Half-Bridge | Power OR'ing Circuit |
Use Scenario: High-side switch in brushed DC motor H-bridge for robotics and industrial actuators operating from 24–48 V supplies. IC Role / Device Role / Timing Role: Upper-leg switch in complementary pair; synchronized with N-channel low-side to prevent shoot-through. Use Value: Fast turn-off delay (21 ns typ. at VGS = -10 V) and low Ciss (1575 pF) enable clean commutation at >100 kHz PWM frequencies. |
Use Scenario: Redundant power path selection in server PSUs and industrial PLCs where two independent 12 V or 24 V inputs feed common bus. IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET acting as ideal diode replacement; blocks reverse current while conducting forward. Use Value: Body diode VSD = -0.81 V (typ.) reduces forward drop vs. Schottky; RDS(on) = 0.046 Ω at -4.5 V enables logic-level control without auxiliary bias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package; higher RDS(on) (0.3 Ω @ -10 V); slower switching (Qg = 52 nC); no exposed thermal pad. | Requires heatsink; unsuitable for space-constrained PCBs; limited to ≤100 kHz switching. | Select when legacy through-hole mounting or ultra-low-cost prototyping is required; not recommended for new high-density designs. |
| DMTH6016LKQ-13 | PowerDI™ 5060 package; lower VDS (-40 V); similar RDS(on) (0.022 Ω @ -10 V); slightly higher Qg (12.5 nC). | Better suited for 24 V systems; less margin for 48 V surge events; same thermal interface capability via exposed drain. | Prefer for cost-sensitive 24 V battery systems where 60 V rating is unnecessary; verify avalanche energy (EAS = 12 mJ) meets system requirements. |
Compared with IRF9530NPBF and DMTH6016LKQ-13, SIJ5623DP-T1-GE3 delivers superior thermal performance (RthJC = 3.0 °C/W), tighter VGS(th) distribution, and optimized FOM for high-frequency load switching-making it the preferred choice for compact, high-reliability 48 V industrial power rails.
Availability
SIJ5623DP-T1-GE3 is available at Aetrix Electronics and suitable for battery protection, hot-swap control, motor drive half-bridges, and power OR'ing circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIJ5623DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.
The SIJ5623DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8L P-channel MOSFET family, engineered for high-current, low-loss switching in space-constrained industrial and battery-powered systems.
FAQ
What is the maximum continuous drain current rating for SIJ5623DP-T1-GE3 at 70 °C case temperature?
The SIJ5623DP-T1-GE3 supports -20.9 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package under sustained power dissipation; designers must ensure adequate PCB copper area and thermal vias to maintain case temperature within this limit during operation.
Does SIJ5623DP-T1-GE3 include integrated ESD protection on the gate?
SIJ5623DP-T1-GE3 does not specify integrated gate ESD protection in its datasheet. The device features 100 % Rg testing but relies on external gate resistors and layout practices (e.g., short gate traces, local decoupling) for ESD robustness. System-level ESD protection should be implemented per IEC 61000-4-2 requirements using TVS diodes or RC networks external to the SIJ5623DP-T1-GE3.
Can SIJ5623DP-T1-GE3 be used in linear regulation mode?
SIJ5623DP-T1-GE3 is not characterized or rated for linear (saturation) operation. Its Safe Operating Area (SOA) curve shows pulsed limits only, and continuous linear use risks thermal runaway due to positive RDS(on) temperature coefficient and lack of SOA derating data. It must be operated in switching mode with defined duty cycle and thermal management per the datasheet's junction temperature limits (TJ ≤ 150 °C).
What is the body diode reverse recovery charge (Qrr) of SIJ5623DP-T1-GE3?
The SIJ5623DP-T1-GE3 has a body diode reverse recovery charge Qrr of 37 nC (typ.) and 74 nC (max) at IF = -10 A, dI/dt = 100 A/μs, and TJ = 25 °C. This value directly impacts switching losses in synchronous rectification and bidirectional current paths; designers should account for Qrr in gate driver sizing and snubber design for high-frequency operation.
Is SIJ5623DP-T1-GE3 suitable for automotive applications per AEC-Q101?
SIJ5623DP-T1-GE3 is not qualified to AEC-Q101. While Vishay offers AEC-Q101-qualified variants in the same PowerPAK® SO-8L family (e.g., SIJ5623DP-T1-GE3's automotive-grade sibling), this specific part number lacks qualification documentation, failure rate data, and extended temperature validation required for automotive use. For automotive designs, consult Vishay's AEC-Q101 product matrix before selection.
SIJ5623DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.3A (Ta), 26.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1575 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.1W (Ta), 32.9W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJ5623DP-T1-GE3 FAQ
1.How can I place an order for SIJ5623DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJ5623DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJ5623DP-T1-GE3 reliable?
The price and inventory of SIJ5623DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ5623DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJ5623DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ5623DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJ5623DP-T1-GE3?
SIJ5623DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJ5623DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJ5623DP-T1-GE3?
For technical support, including SIJ5623DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ5623DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJ5623DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJ5623DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ5623DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJ5623DP-T1-GE3?
All SIJ5623DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ5623DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJ5623DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJ5623DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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