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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJA22DP-T1-GE3

Name: SIJA22DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJA22DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJA22DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJA22DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 64A/201A PPAK

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Product details

Overview

SIJA22DP-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering R_DS(on) = 0.74 mΩ at V_GS = 10 V and 1.40 mΩ at 4.5 V, with 39 nC total gate charge (V_GS = 4.5 V), rated for 201 A continuous drain current at T_C = 25 °C, and optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIJA22DP-T1-GE3 datasheet, SIJA22DP-T1-GE3 pinout, SIJA22DP-T1-GE3 application, or SIJA22DP-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on)-Q_oss figure of merit, Q_gd/Q_gs ratio < 1 for fast switching, 100% R_g and UIS testing, and suitability for high-power-density hot-swap and OR-ing FET designs requiring robust body diode performance (t_rr = 50–100 ns, Q_rr = 60–120 nC).

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture tuned specifically to minimize the R_DS(on)-Q_oss figure of merit-critical for reducing conduction and switching losses in high-frequency synchronous buck converters. Its gate charge profile (Q_g = 39 nC @ 4.5 V, Q_gd = 9.8 nC) and low Q_gd/Q_gs ratio (< 1) enable precise control of Miller plateau timing and reduced turn-off energy.

The device features a thermally enhanced PowerPAK® SO-8L leadless package with exposed copper drain pad, achieving R_thJC = 1.7 °C/W (typical) and supporting high-current operation up to 201 A at case temperature 25 °C. Its body diode exhibits V_SD = 0.74–1.1 V @ I_S = 10 A and t_rr = 50–100 ns under 100 A/μs di/dt, enabling reliable reverse recovery in OR-ing configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines use in ≤24 V input systems like server VRMs and telecom DC/DC.
R_DS(on) @ 10 V	0.74 mΩ max - Enables <1 W conduction loss at 40 A, critical for high-current power stages.
R_DS(on) @ 4.5 V	1.40 mΩ max - Ensures strong enhancement-mode drive compatibility with 5 V or 3.3 V logic-level gate drivers.
Q_g @ 4.5 V	39 nC typ - Low gate charge reduces driver power demand and enables efficient 500 kHz–1 MHz switching.
I_D (continuous)	201 A @ T_C = 25 °C - High current rating supports single-FET solutions in 100+ A POL converters.
t_rr	50–100 ns - Fast body diode recovery minimizes shoot-through risk and EMI in synchronous rectification.
R_thJC	1.7 °C/W typical - Enables direct heatsink mounting for thermal management in high-power density layouts.

Pinout & Package

SIJA22DP-T1-GE3 uses the PowerPAK® SO-8L single-drain leadless package (5.13 mm × 6.15 mm footprint), featuring an exposed copper drain pad on the bottom side for optimal thermal conduction and four source terminals (pins 1, 2, 3, and 7), one gate (pin 4), and one drain (bottom-side thermal pad). The top-side pins are arranged in standard SO-8L layout with no leads; soldering requires reflow per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7 (top-side)	Source	Four parallel source connections reduce package inductance and improve current sharing in high-di/dt applications.
4 (top-side)	Gate	Single gate terminal with R_g = 0.2–2.0 Ω; low impedance path enables fast, controlled turn-on/turn-off.
Bottom pad	Drain	Exposed copper drain pad serves as primary thermal path and high-current drain connection; no solder fillet required at edge.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)-Q_oss FOM for minimized combined conduction + switching loss in high-frequency DC/DC.
Q_gd/Q_gs ratio < 1	Reduces Miller-induced turn-off delay and improves controllability during hard-switching transitions.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress.
Optimized body diode	Low V_SD (0.74 V typ) and fast t_rr (50 ns typ) support efficient synchronous rectification without external Schottky.
PowerPAK® SO-8L package	Leadless construction with exposed drain pad achieves 1.7 °C/W R_thJC, enabling >200 A current handling in compact area.

Applications

Server VRM Synchronous Rectifier	Telecom 48 V Input DC/DC Converter
Use Scenario: High-current output stage of a 48 V–12 V intermediate bus converter in AI accelerator servers, operating at 600 kHz with 150 A load. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Achieves <0.5 W conduction loss at 150 A due to 0.74 mΩ R_DS(on), improving system efficiency by 1.2% versus legacy MOSFETs.	Use Scenario: Primary-side high-side switch in a 48 V input, 12 V/100 A isolated forward converter for 5G base station power supplies. IC Role / Device Role / Timing Role: High-current, high-efficiency main switch with fast turn-off to minimize dead-time losses. Use Value: Q_gd/Q_gs < 1 and 39 nC Q_g @ 4.5 V enable clean, jitter-free switching at 300–500 kHz with minimal gate driver dissipation.
Hot-Swap Controller FET	OR-ing FET for Redundant Power Supplies
Use Scenario: Inrush-limiting and fault-isolation FET in a 12 V backplane hot-swap module protecting downstream FPGA and memory subsystems. IC Role / Device Role / Timing Role: Load switch with integrated current sensing and fast fault response via gate control. Use Value: 201 A continuous rating and 50 ns body diode t_rr allow rapid current interruption during overcurrent events without latch-up.	Use Scenario: OR-ing element connecting two 12 V redundant AC/DC supplies to a common 12 V bus in industrial PLC power architecture. IC Role / Device Role / Timing Role: Bidirectional current-handling FET used in active OR-ing topology with dedicated controller IC. Use Value: Low V_SD (0.74 V) and fast reverse recovery (t_rr = 50 ns) minimize forward drop and cross-conduction loss during supply switchover.

Server VRM Synchronous Rectifier

Telecom 48 V Input DC/DC Converter

Use Scenario: High-current output stage of a 48 V–12 V intermediate bus converter in AI accelerator servers, operating at 600 kHz with 150 A load.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves <0.5 W conduction loss at 150 A due to 0.74 mΩ R_DS(on), improving system efficiency by 1.2% versus legacy MOSFETs.

Use Scenario: Primary-side high-side switch in a 48 V input, 12 V/100 A isolated forward converter for 5G base station power supplies.

IC Role / Device Role / Timing Role: High-current, high-efficiency main switch with fast turn-off to minimize dead-time losses.

Use Value: Q_gd/Q_gs < 1 and 39 nC Q_g @ 4.5 V enable clean, jitter-free switching at 300–500 kHz with minimal gate driver dissipation.

Hot-Swap Controller FET

OR-ing FET for Redundant Power Supplies

Use Scenario: Inrush-limiting and fault-isolation FET in a 12 V backplane hot-swap module protecting downstream FPGA and memory subsystems.

IC Role / Device Role / Timing Role: Load switch with integrated current sensing and fast fault response via gate control.

Use Value: 201 A continuous rating and 50 ns body diode t_rr allow rapid current interruption during overcurrent events without latch-up.

Use Scenario: OR-ing element connecting two 12 V redundant AC/DC supplies to a common 12 V bus in industrial PLC power architecture.

IC Role / Device Role / Timing Role: Bidirectional current-handling FET used in active OR-ing topology with dedicated controller IC.

Use Value: Low V_SD (0.74 V) and fast reverse recovery (t_rr = 50 ns) minimize forward drop and cross-conduction loss during supply switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 0.95 mΩ @ 10 V; Q_g = 42 nC @ 4.5 V; same PowerSO-8 package but higher R_DS(on) and slower t_rr (75 ns).	Less suitable for >1 MHz synchronous rectification due to higher Q_gd/Q_gs and larger R_DS(on)-Q_oss FOM.	Select when cost sensitivity outweighs peak efficiency needs and thermal margin allows higher R_DS(on).
DMTH10H025LPSQ-13	R_DS(on) = 0.95 mΩ @ 10 V; Q_g = 34 nC @ 4.5 V; PowerPAK 8x8 package offers lower R_thJC (0.9 °C/W) but larger footprint (8 mm × 8 mm).	Better thermal performance but incompatible PCB layout; not drop-in due to different pad pattern and pinout.	Choose only when board redesign is possible and junction-to-case thermal resistance below 1.2 °C/W is mandatory.

Compared with IRFH7107TRPBF and DMTH10H025LPSQ-13, SIJA22DP-T1-GE3 delivers the lowest R_DS(on)-Q_oss FOM in its class and best-in-class 0.74 mΩ conduction resistance, making it optimal for space-constrained, high-efficiency 25 V synchronous rectifiers where thermal resistance and gate drive simplicity are prioritized over absolute minimum package size or lowest gate charge alone.

Availability

SIJA22DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial hot-swap modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for high-volume production.

Supply support for SIJA22DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal optimization.

The SIJA22DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and load switching in datacenter, telecom, and industrial power systems where ultra-low R_DS(on) and fast switching are essential.

FAQ

What is the maximum continuous drain current rating for SIJA22DP-T1-GE3 at 70 °C case temperature?

The SIJA22DP-T1-GE3 is rated for 161 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package under sustained high-power operation and must be validated with actual board-level thermal design using R_thJC = 1.7 °C/W (typical) and system airflow conditions. SIJA22DP-T1-GE3 maintains full functionality across this range without parameter shift.

Does SIJA22DP-T1-GE3 support 3.3 V gate drive in logic-level applications?

Yes, SIJA22DP-T1-GE3 is fully characterized down to V_GS = 4.5 V, with R_DS(on) = 1.40 mΩ max at that voltage-making it compatible with 5 V and 3.3 V logic-level gate drivers when operated within safe SOA limits. Its gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.2 V, ensuring strong enhancement-mode turn-on at 3.3 V with adequate margin. SIJA22DP-T1-GE3 does not require 10 V for functional operation.

What is the body diode reverse recovery charge (Q_rr) specification for SIJA22DP-T1-GE3?

The body diode reverse recovery charge Q_rr for SIJA22DP-T1-GE3 is 60–120 nC, measured at I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. This value directly impacts switching loss and EMI in synchronous rectifier and OR-ing applications. SIJA22DP-T1-GE3's low Q_rr contributes to its optimized R_DS(on)-Q_oss FOM and supports clean commutation in high-frequency topologies.

Is SIJA22DP-T1-GE3 qualified for lead-free and halogen-free manufacturing processes?

Yes, SIJA22DP-T1-GE3 is explicitly marked "Lead (Pb)-free and halogen-free" in the Ordering Information section and complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912). It supports peak reflow temperatures up to 260 °C per J-STD-020, and the PowerPAK® SO-8L package is designed for compatibility with standard lead-free assembly processes. SIJA22DP-T1-GE3 meets all environmental compliance requirements for global industrial and telecom deployments.

How is thermal performance characterized for SIJA22DP-T1-GE3 in the absence of a heatsink?

SIJA22DP-T1-GE3's junction-to-ambient thermal resistance R_thJA is 22–26 °C/W (typical/max) when mounted on a 1" × 1" FR4 board with 2 oz copper, per note b in the datasheet. Without a heatsink, practical continuous current must be limited using this value and T_J(max) = 150 °C. For example, at T_A = 70 °C, max power dissipation is ~3.1 W, limiting I_D to ~57 A. SIJA22DP-T1-GE3 relies on PCB copper area and optional heatsinking for higher-power operation.

SIJA22DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Ta), 201A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 0.74mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJA22DP-T1-GE3 FAQ

1.How can I place an order for SIJA22DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJA22DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJA22DP-T1-GE3 reliable?

The price and inventory of SIJA22DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA22DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJA22DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA22DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJA22DP-T1-GE3?

SIJA22DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJA22DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJA22DP-T1-GE3?

For technical support, including SIJA22DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA22DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJA22DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJA22DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA22DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJA22DP-T1-GE3?

All SIJA22DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA22DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJA22DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJA22DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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