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Vishay Siliconix SIJA52DP-T1-GE3
- Part No.:
- SIJA52DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJA52DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:200
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Product details
Overview
SIJA52DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L Single package, delivering RDS(on) = 1.7 mΩ at VGS = 10 V, Qg = 97.5 nC (typ), and 60 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and VRM load switching.
For engineers reviewing the SIJA52DP-T1-GE3 datasheet, SIJA52DP-T1-GE3 pinout, SIJA52DP-T1-GE3 application, or SIJA52DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure of merit, Qgd/Qgs ratio < 1 for fast switching, 100 % Rg and UIS testing, and lead-free/halogen-free PowerPAK SO-8L packaging.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon architecture with tuned gate charge distribution (Qgd/Qgs < 1) to minimize switching losses in hard-switched and synchronous rectifier topologies. Its 40 V VDS rating and 1.1–2.4 V gate threshold support 3.3 V and 5 V gate drive compatibility.
Thermal design leverages a low RthJC of 1.7 °C/W (typ) and PowerPAK SO-8L's exposed-drain thermal pad, enabling high-power-density operation up to 48 W at TC = 25 °C. The body diode exhibits trr = 53 ns (typ) and Qrr = 76 nC (typ) at IF = 10 A, dI/dt = 100 A/μs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - supports 12 V and 24 V input bus systems with margin for transient spikes |
| RDS(on) | 1.7 mΩ max at VGS = 10 V - enables ≤ 1.02 W conduction loss at 60 A |
| ID (cont) | 60 A at TC = 25 °C - suitable for high-current VRM phases and ORing rails |
| Qg | 97.5 nC typ at VGS = 10 V - determines gate driver sizing and switching speed in 100–500 kHz DC/DC converters |
| Qgd/Qgs | < 1 - reduces Miller-induced switching delay and improves turn-off controllability |
| RthJC | 1.7 °C/W typ - allows direct heatsinking via exposed drain pad for thermal management |
| trr | 53 ns typ - minimizes reverse recovery loss in synchronous rectifier applications |
Pinout & Package
SIJA52DP-T1-GE3 uses the PowerPAK® SO-8L Single package: leadless, surface-mount, with exposed copper drain pad on bottom side (no plating); dimensions 5.13 mm × 6.15 mm × 1.07 mm (L × W × H). Thermal pad must be soldered to PCB copper for rated power handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Source (S) | Common source connection; pins 1, 2, 3, 4, 6, 7, 8 are internally bonded to source - used for low-inductance return path and thermal conduction |
| 5 | Gate (G) | Control terminal; requires <100 nC gate charge drive; sensitive to ESD (±100 nA IGSS max) |
| Bottom Pad | Drain (D) | Primary power terminal and thermal interface; electrically and thermally connected to drain; must be soldered to large PCB copper area |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables lowest RDS(on) × Qoss FOM for reduced total switching + conduction loss in high-frequency DC/DC |
| Qgd/Qgs < 1 | Improves gate control during turn-off, reducing voltage overshoot and enabling tighter dead-time optimization |
| 100 % Rg tested | Ensures consistent gate resistance (0.4–2.0 Ω) across production lots for predictable drive requirements |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events common in motor drives and ORing circuits |
| Lead (Pb)-free & halogen-free | Meets RoHS 2011/65/EU and JEDEC JS709C material compliance without compromising thermal or electrical performance |
Applications
| Synchronous Rectification | ORing Circuit |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V LLC resonant converters for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated by controller with precise timing relative to primary switch. Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, enabling >96 % efficiency at full load with 1.7 mΩ RDS(on). | Use Scenario: Redundant 12 V power rail combining from dual hot-swap controllers in telecom shelf systems. IC Role / Device Role / Timing Role: Unidirectional power path switch; body diode blocks reverse current while MOSFET conducts forward current when enabled. Use Value: Eliminates 0.4–0.7 V diode drop, cutting power loss by ~5 W per rail at 10 A and improving thermal margin. |
| High-Density DC/DC Converter | VRM Load Switch |
Use Scenario: 30 A point-of-load converter in AI accelerator card with space-constrained layout. IC Role / Device Role / Timing Role: High-side or low-side power switch in multiphase buck topology; driven by integrated gate driver. Use Value: 47.5 nC Qg at 4.5 V enables efficient 500 kHz operation with minimal gate drive loss and compact driver IC selection. | Use Scenario: Inrush-limited 48 V to 1 V VRM output stage powering CPU cores in enterprise servers. IC Role / Device Role / Timing Role: Final-stage load switch controlling power delivery to core logic; sequenced with enable signal. Use Value: 60 A rating and 1.7 mΩ RDS(on) support peak currents >50 A with <100 mV drop, preserving voltage regulation accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 2.0 mΩ @ 10 V; Qg = 53 nC; PowerSO-8 package; higher RthJC (2.5 °C/W) | Lower gate charge but higher conduction loss; less effective thermal dissipation | Prefer for gate-drive-limited designs where switching loss dominates; avoid in thermally constrained VRMs |
| DMTH4007LPSQ-13 | RDS(on) = 1.8 mΩ @ 10 V; Qg = 105 nC; PowerDI 5060 package; no exposed drain pad | Similar RDS(on) but higher Qg; inferior thermal performance due to non-exposed-drain construction | Acceptable for lower-power ORing or load switch use; not recommended for >40 A continuous or high-duty-cycle sync rect |
Compared with IRF6642TRPBF and DMTH4007LPSQ-13, SIJA52DP-T1-GE3 delivers the lowest RDS(on) × Qoss FOM and best thermal resistance, making it optimal for high-current, high-efficiency synchronous rectification and VRM phase legs where both conduction and switching losses must be minimized.
Availability
SIJA52DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, ORing circuits, and high-power-density DC/DC converters requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant packaging.
Supply support for SIJA52DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIJA52DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion in datacenter, telecom, and industrial power systems where low RDS(on) and optimized gate charge are critical.
FAQ
What is the maximum continuous drain current rating for SIJA52DP-T1-GE3 at 70 °C case temperature?
The SIJA52DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 60 A value at 25 °C case temperature and is limited by package thermal capability rather than silicon junction limits. The device maintains full 60 A capability up to TC = 70 °C due to its low RthJC of 1.7 °C/W (typ) and robust PowerPAK SO-8L construction.
Does SIJA52DP-T1-GE3 have a specified avalanche energy rating?
Yes, SIJA52DP-T1-GE3 has a single-pulse avalanche energy rating (EAS) of 61 mJ, measured with L = 0.1 mH. This rating is validated through 100 % UIS (unclamped inductive switching) testing per production lot, confirming ruggedness against transient overvoltage events in inductive load switching applications such as ORing and motor drive half-bridges.
What is the gate threshold voltage range for SIJA52DP-T1-GE3, and how does it affect 3.3 V logic-level drive?
The SIJA52DP-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.1 V to 2.4 V at ID = 250 μA. While it will turn on with 3.3 V gate drive, its RDS(on) is specified at 2.3 mΩ max at VGS = 4.5 V and 1.7 mΩ max at VGS = 10 V. For reliable low-loss operation under 3.3 V drive, system-level validation of actual RDS(on) and temperature rise is required - the device is not characterized as a true 3.3 V logic-level MOSFET.
Can SIJA52DP-T1-GE3 be used in parallel configurations, and what design considerations apply?
Yes, SIJA52DP-T1-GE3 can be paralleled for higher current capacity, but requires careful attention to gate loop inductance matching, source inductance balancing, and thermal coupling. Its positive RDS(on) temperature coefficient promotes current sharing, and 100 % Rg testing ensures consistent gate resistance. Layout must minimize asymmetry in gate drive paths and ensure uniform PCB copper area under each device's thermal pad to prevent thermal runaway.
What is the body diode forward voltage of SIJA52DP-T1-GE3 at 5 A, and how does it compare to Schottky alternatives?
The body diode forward voltage (VSD) of SIJA52DP-T1-GE3 is 0.71 V typical at IS = 5 A and TJ = 25 °C. While higher than a 40 V Schottky diode (~0.45 V), its use in synchronous rectification eliminates steady-state conduction loss entirely when actively switched - the body diode only conducts during dead time, where its 53 ns trr and low Qrr minimize associated energy loss.
SIJA52DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 20 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7150 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJA52DP-T1-GE3 FAQ
1.How can I place an order for SIJA52DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJA52DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJA52DP-T1-GE3 reliable?
The price and inventory of SIJA52DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA52DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJA52DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA52DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJA52DP-T1-GE3?
SIJA52DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJA52DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJA52DP-T1-GE3?
For technical support, including SIJA52DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA52DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJA52DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJA52DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA52DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJA52DP-T1-GE3?
All SIJA52DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA52DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJA52DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJA52DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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