Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJA54ADP-T1-GE3

Name: SIJA54ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJA54ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIJA54ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJA54ADP-T1-GE3.pdf

Description:: N-CHANNEL 40 V (D-S) MOSFET POWE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,923

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIJA54ADP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering R_DS(on) = 2.3 mΩ at V_GS = 10 V and 3.35 mΩ at V_GS = 4.5 V, with 126 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification and high-power-density DC/DC converters.

For engineers reviewing the SIJA54ADP-T1-GE3 datasheet, SIJA54ADP-T1-GE3 pinout, SIJA54ADP-T1-GE3 application, or SIJA54ADP-T1-GE3 equivalent, this device supports critical design decisions in high-current switching nodes where low Q_g (21.5 nC typ. at 4.5 V), low Q_oss, and robust UIS testing are essential for thermal stability and efficiency in compact power stages.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance and optimized gate charge ratio (Q_gd/Q_gs < 1), enabling fast, low-loss switching with reduced voltage overshoot during hard commutation. Its 100 % R_g and UIS tested construction ensures reliability under repetitive avalanche stress.

The PowerPAK® SO-8L leadless package provides enhanced thermal performance (R_thJC = 1.5 °C/W typ.) and mechanical resilience via flexible leads, supporting high-current PCB layouts without solder fillet dependency at exposed copper terminals per Vishay's singulation process specification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V–24 V input bus applications
R_DS(on) max @ 10 V	2.3 mΩ - Enables ≤ 3 W conduction loss at 85 A in high-current synchronous rectifiers
R_DS(on) max @ 4.5 V	3.35 mΩ - Supports logic-level gate drive in 5 V control systems without level-shifting
Q_g typ. @ 4.5 V	21.5 nC - Reduces gate drive power and enables >1 MHz switching in LLC resonant converters
I_D cont. @ T_C = 25 °C	126 A - Sustains high output current in server VRMs and telecom DC/DC modules
R_thJC max	1.9 °C/W - Allows direct heatsink attachment for thermal management in high-power density designs
Q_gd/Q_gs ratio	< 1 - Minimizes Miller-induced shoot-through risk and improves EMI behavior in half-bridge topologies

Pinout & Package

Package: PowerPAK® SO-8L - leadless, surface-mount, thermally enhanced single-die package with exposed drain paddle (topside view: D at pins 1, 2, 3, 4; G at pin 6; S at pins 5, 7, 8). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Internally connected to exposed copper paddle - primary thermal path to PCB copper pour or heatsink
5, 7, 8	Source (S)	Low-inductance source return path; pins 5/7/8 share common internal connection for reduced loop inductance
6	Gate (G)	Control terminal with 1.1 Ω typical gate resistance - compatible with standard gate drivers without external series R

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 2.3 mΩ R_DS(on) at 10 V in SO-8L footprint - 30 % lower on-resistance than prior-gen equivalents
Flexible leads	Accommodates ±0.15 mm PCB warpage and thermal cycling without solder joint fatigue in industrial environments
100 % R_g and UIS tested	Guarantees gate resistance consistency and single-pulse avalanche energy rating of 31.25 mJ for robustness in inductive load switching
Q_gd/Q_gs < 1	Reduces Miller plateau duration and improves controllability during turn-off - critical for ZVS operation in resonant topologies
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc# 99912)

Applications

Server Voltage Regulator Modules (VRMs)	Telecom DC/DC Converters
Use Scenario: High-current (≥100 A), multiphase buck converter supplying CPU/GPU core voltage from 12 V input bus. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by ≥1.8 W vs. 3.5 mΩ alternatives at 85 A, improving VRM efficiency by 0.4–0.6 %.	Use Scenario: 48 V–12 V intermediate bus converter in 5G base station power supply with strict thermal envelope. IC Role / Device Role / Timing Role: Primary-side high-current switch in phase-shifted full-bridge topology with 100 ns dead-time constraints. Use Value: 21.5 nC Q_g at 4.5 V enables clean turn-on with minimal gate driver loss, reducing total switching loss by 12 % over 35 nC competitors.
Solar Microinverters	Industrial Motor Drives
Use Scenario: DC/AC inverter stage converting PV panel output (30–60 V) to grid-synchronized AC using H-bridge configuration. IC Role / Device Role / Timing Role: High-side and low-side switching element in bidirectional power flow architecture with 20 V gate drive margin. Use Value: 40 V V_DS rating accommodates 1.2× PV open-circuit voltage spikes; 31.25 mJ E_AS withstands line transients without snubbers.	Use Scenario: 24 V–48 V BLDC motor controller for factory automation actuators requiring high peak torque and thermal durability. IC Role / Device Role / Timing Role: Half-bridge leg switch handling 100 A pulsed currents with <10 μs switching transitions. Use Value: 126 A I_D rating and 1.5 °C/W R_thJC enable sustained 80 A RMS operation at T_C = 85 °C without forced air cooling.

Server Voltage Regulator Modules (VRMs)

Telecom DC/DC Converters

Use Scenario: High-current (≥100 A), multiphase buck converter supplying CPU/GPU core voltage from 12 V input bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by ≥1.8 W vs. 3.5 mΩ alternatives at 85 A, improving VRM efficiency by 0.4–0.6 %.

Use Scenario: 48 V–12 V intermediate bus converter in 5G base station power supply with strict thermal envelope.

IC Role / Device Role / Timing Role: Primary-side high-current switch in phase-shifted full-bridge topology with 100 ns dead-time constraints.

Use Value: 21.5 nC Q_g at 4.5 V enables clean turn-on with minimal gate driver loss, reducing total switching loss by 12 % over 35 nC competitors.

Solar Microinverters

Industrial Motor Drives

Use Scenario: DC/AC inverter stage converting PV panel output (30–60 V) to grid-synchronized AC using H-bridge configuration.

IC Role / Device Role / Timing Role: High-side and low-side switching element in bidirectional power flow architecture with 20 V gate drive margin.

Use Value: 40 V V_DS rating accommodates 1.2× PV open-circuit voltage spikes; 31.25 mJ E_AS withstands line transients without snubbers.

Use Scenario: 24 V–48 V BLDC motor controller for factory automation actuators requiring high peak torque and thermal durability.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 100 A pulsed currents with <10 μs switching transitions.

Use Value: 126 A I_D rating and 1.5 °C/W R_thJC enable sustained 80 A RMS operation at T_C = 85 °C without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 31 nC; TO-252 package; higher R_thJA (62.5 °C/W)	Lower current density; unsuitable for >70 A continuous PCB-mounted designs without heatsink	Prefer SIJA54ADP-T1-GE3 when board space and thermal performance are constrained
DMTH4007LPS-13	R_DS(on) = 2.6 mΩ @ 10 V; Q_g = 24.5 nC; PowerPAK 8x8 package; larger footprint (8 mm × 8 mm)	Higher thermal mass but requires 2.5× PCB area; better for >150 A parallel configurations	Choose SIJA54ADP-T1-GE3 for compact 100–126 A single-device solutions with SO-8L layout compatibility

Compared with IRF7470PBF and DMTH4007LPS-13, SIJA54ADP-T1-GE3 delivers the lowest R_DS(on) in the smallest thermally optimized SO-8L form factor, making it optimal for space-constrained, high-efficiency 40 V synchronous rectifiers where gate drive simplicity and PCB thermal relief are prioritized.

Availability

SIJA54ADP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for SIJA54ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIJA54ADP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and DC/DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIJA54ADP-T1-GE3 at case temperature of 70 °C?

The SIJA54ADP-T1-GE3 supports 100 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 126 A value at 25 °C due to thermal resistance limits and junction temperature constraints (T_J ≤ 150 °C). Designers must verify PCB copper area and airflow to sustain this current in production.

Does SIJA54ADP-T1-GE3 require a gate resistor for standard 12 V gate drivers?

SIJA54ADP-T1-GE3 has a typical gate resistance (R_g) of 1.1 Ω, which provides inherent damping for most gate drivers. While no external gate resistor is mandatory, a 2–5 Ω series resistor is recommended to suppress ringing in high-di/dt layouts. The device's Q_gd/Q_gs < 1 ratio further reduces sensitivity to gate drive impedance variations.

Can SIJA54ADP-T1-GE3 be used in 48 V input DC/AC inverters?

No - SIJA54ADP-T1-GE3 has a 40 V V_DS rating and is not rated for 48 V nominal bus applications. It is suitable only for 30–40 V systems such as 36 V battery-powered equipment or 12/24 V intermediate buses. For 48 V inverters, a 60 V or 75 V rated MOSFET like SIJA64ADP-T1-GE3 is required to maintain safe voltage margin.

Is SIJA54ADP-T1-GE3 qualified for automotive applications?

SIJA54ADP-T1-GE3 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications. Its -55 °C to +150 °C operating range meets extended industrial requirements, but automotive-grade validation (e.g., PPAP, stress testing per AEC standards) is not performed or documented for this part number.

What is the body diode forward voltage of SIJA54ADP-T1-GE3 at 5 A source current?

The body diode forward voltage (V_SD) of SIJA54ADP-T1-GE3 is 0.72 V (typical) at I_S = 5 A and T_J = 25 °C, with a maximum of 1.1 V. This low V_SD contributes to reduced reverse conduction loss during synchronous rectification dead-time intervals, improving overall converter efficiency.

SIJA54ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 35.4A (Ta), 126A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3850 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJA54ADP-T1-GE3 FAQ

1.How can I place an order for SIJA54ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJA54ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJA54ADP-T1-GE3 reliable?

The price and inventory of SIJA54ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA54ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJA54ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA54ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJA54ADP-T1-GE3?

SIJA54ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJA54ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJA54ADP-T1-GE3?

For technical support, including SIJA54ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA54ADP-T1-GE3 requirements.

6.How does Aetrix verify that SIJA54ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJA54ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA54ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJA54ADP-T1-GE3?

All SIJA54ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA54ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJA54ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJA54ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …