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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJA54DP-T1-GE3

Name: SIJA54DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJA54DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJA54DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJA54DP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 60A PPAK SO-8

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Product details

Overview

SIJA54DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L Single package, delivering R_DS(on) = 2.35 mΩ at V_GS = 10 V and 3.20 mΩ at V_GS = 4.5 V, with 60 A continuous drain current (T_J = 150 °C), optimized for high-efficiency synchronous rectification and VRM load switching.

For engineers reviewing the SIJA54DP-T1-GE3 datasheet, SIJA54DP-T1-GE3 pinout, SIJA54DP-T1-GE3 application, or SIJA54DP-T1-GE3 equivalent, this device is selected for low-R_DS(on)/Q_oss figure-of-merit, Q_gd/Q_gs < 1 for fast switching, and 100 % R_g and UIS testing - critical for high-density DC/DC and ORing designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture tuned for minimal R_DS(on) × Q_oss, enabling high-frequency operation in hard-switched topologies. Its gate charge profile (Q_g = 69 nC typ. at V_GS = 10 V; Q_gd = 6.9 nC) and low Q_gd/Q_gs ratio (< 1) reduce switching losses and improve controllability during turn-off transitions.

The PowerPAK® SO-8L Single package features exposed-drain thermal pad on bottom side, achieving R_thJC = 2.5 °C/W (typ.) and supporting high-power density layouts. It is rated for V_GS = ±20 V / –16 V and operates across T_J = –55 to +150 °C, with body diode t_rr = 44 ns (typ.) and Q_rr = 58 nC (typ.) at I_F = 10 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V–48 V input DC/DC stages
R_DS(on) @ 10 V	2.35 mΩ max - Enables ≤ 1.4 W conduction loss at 60 A, critical for VRM efficiency
R_DS(on) @ 4.5 V	3.20 mΩ max - Ensures robust operation with 5 V gate drive in logic-level control systems
I_D (continuous)	60 A @ T_J = 150 °C - Supports high-current load switch and ORing applications without derating
Q_g / Q_gd	69 nC / 6.9 nC typ. - Low Q_gd/Q_gs ratio improves Miller immunity and reduces switching energy
t_rr / Q_rr	44 ns / 58 nC typ. - Fast, low-charge body diode enables efficient synchronous rectification
R_thJC	2.5 °C/W typ. - High thermal conductivity to heatsink supports >36 W power dissipation at case

Pinout & Package

SIJA54DP-T1-GE3 uses the leadless PowerPAK® SO-8L Single package (5.13 mm × 6.15 mm footprint), with exposed copper drain pad on bottom side for enhanced thermal performance. The package is RoHS-compliant, halogen-free, and Pb-free per J-STD-020 reflow profile.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7, 8	Source (S)	Common source connection; six parallel pins minimize source inductance and resistive drop
4	Gate (G)	Single-point gate input; low R_g = 0.4–2.0 Ω ensures stable, low-noise switching
6	Drain (D)	Exposed copper drain pad on bottom - primary thermal path and high-current output node

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on) × Q_oss FOM in its voltage class, reducing total switching loss
Q_gd/Q_gs < 1	Minimizes Miller plateau duration and improves dV/dt immunity in high-side configurations
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch gate resistance variation
100 % UIS tested	Validates ruggedness under unclamped inductive switching stress, critical for motor and converter reliability
Low V_SD body diode	V_SD = 0.72 V typ. at I_S = 5 A - Reduces reverse conduction loss in ORing and bidirectional topologies

Applications

Synchronous Rectification	ORing Circuit
Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., LLC, phase-shifted full-bridge). IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: Achieves >98 % secondary efficiency at 48 V input / 12 V output due to 2.35 mΩ R_DS(on) and fast 44 ns t_rr.	Use Scenario: Redundant power supply combining in telecom or server backplanes. IC Role / Device Role / Timing Role: Ideal diode controller interface MOSFET; placed between redundant rails to prevent backfeed and enable hot-swap. Use Value: Enables <10 mV forward drop at 30 A using 4.5 V gate drive, minimizing power loss and thermal rise vs. discrete diodes.
High-Density VRM Load Switch	DC/AC Inverter Half-Bridge
Use Scenario: Point-of-load (POL) regulation in AI accelerators and high-performance computing boards. IC Role / Device Role / Timing Role: High-current, low-loss load switch controlled by PMIC or sequencer; handles up to 60 A steady-state current. Use Value: Delivers <1.5 W conduction loss at 60 A and supports rapid on/off cycling with 8 ns t_d(on) at 10 V drive.	Use Scenario: Low-voltage leg in 48 V–400 V bi-directional DC/AC inverters for energy storage systems. IC Role / Device Role / Timing Role: Hard-switched N-channel switch in half-bridge topology; paired with complementary high-side driver. Use Value: Withstands 30 A pulsed drain current (I_DM = 150 A) and 45 mJ single-pulse avalanche energy (E_AS), ensuring fault tolerance.

Synchronous Rectification

ORing Circuit

Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., LLC, phase-shifted full-bridge).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Achieves >98 % secondary efficiency at 48 V input / 12 V output due to 2.35 mΩ R_DS(on) and fast 44 ns t_rr.

Use Scenario: Redundant power supply combining in telecom or server backplanes.

IC Role / Device Role / Timing Role: Ideal diode controller interface MOSFET; placed between redundant rails to prevent backfeed and enable hot-swap.

Use Value: Enables <10 mV forward drop at 30 A using 4.5 V gate drive, minimizing power loss and thermal rise vs. discrete diodes.

High-Density VRM Load Switch

DC/AC Inverter Half-Bridge

Use Scenario: Point-of-load (POL) regulation in AI accelerators and high-performance computing boards.

IC Role / Device Role / Timing Role: High-current, low-loss load switch controlled by PMIC or sequencer; handles up to 60 A steady-state current.

Use Value: Delivers <1.5 W conduction loss at 60 A and supports rapid on/off cycling with 8 ns t_d(on) at 10 V drive.

Use Scenario: Low-voltage leg in 48 V–400 V bi-directional DC/AC inverters for energy storage systems.

IC Role / Device Role / Timing Role: Hard-switched N-channel switch in half-bridge topology; paired with complementary high-side driver.

Use Value: Withstands 30 A pulsed drain current (I_DM = 150 A) and 45 mJ single-pulse avalanche energy (E_AS), ensuring fault tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 82 nC; TO-252 package; higher R_thJA = 62 °C/W	Larger footprint and lower thermal performance limit usable current in compact layouts	Prefer SIJA54DP-T1-GE3 for space-constrained, high-current VRMs where thermal management is critical
NTMFS4C02PT1G	R_DS(on) = 2.4 mΩ @ 10 V; Q_g = 75 nC; PowerSO-8 package; no exposed drain pad	Higher R_thJC = 3.0 °C/W and no bottom-side thermal path reduces power handling in sustained loads	SIJA54DP-T1-GE3 offers superior thermal performance and lower Q_gd/Q_gs for faster switching in synchronous rectifiers

Compared with IRF7470PBF and NTMFS4C02PT1G, SIJA54DP-T1-GE3 provides the lowest R_DS(on) × Q_oss FOM, best junction-to-case thermal resistance (2.5 °C/W), and optimized Q_gd/Q_gs ratio - making it the preferred choice for high-efficiency, high-power-density 40 V switching applications requiring both low conduction loss and fast, controlled turn-off.

Availability

SIJA54DP-T1-GE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, VRM load switching, and ORing circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and computing applications.

Supply support for SIJA54DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, reliability, and thermal optimization.

The SIJA54DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current power conversion in data center, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIJA54DP-T1-GE3?

The SIJA54DP-T1-GE3 is rated for 60 A continuous drain current at T_J = 150 °C with proper heatsinking. At T_C = 25 °C, this rating remains 60 A, while at T_A = 25 °C it is 32.2 A (per FR4 board test condition). Derating curves confirm usable current up to 40 A at T_C = 70 °C, making SIJA54DP-T1-GE3 suitable for high-current load switches and VRMs where thermal design permits.

Does SIJA54DP-T1-GE3 support 4.5 V gate drive in logic-level applications?

Yes, SIJA54DP-T1-GE3 is fully specified for 4.5 V gate drive: R_DS(on) is guaranteed ≤ 3.20 mΩ at V_GS = 4.5 V and I_D = 10 A. Its gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.4 V, ensuring reliable enhancement-mode turn-on with standard 5 V logic or PWM controllers - a key advantage over older 10 V-only MOSFETs in modern low-voltage power systems.

What is the thermal resistance from junction to case (R_thJC) for SIJA54DP-T1-GE3?

The SIJA54DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 2.5 °C/W, with a maximum of 3.4 °C/W. This value is measured from junction to the exposed copper drain pad on the bottom of the PowerPAK® SO-8L package. That low R_thJC enables efficient heat transfer to PCB copper or external heatsinks - essential for maintaining T_J ≤ 150 °C under 36.7 W steady-state power dissipation.

Is SIJA54DP-T1-GE3 suitable for synchronous rectification with fast body diode recovery?

Yes, SIJA54DP-T1-GE3 is explicitly designed for synchronous rectification, featuring a fast, low-charge body diode with t_rr = 44 ns (typ.) and Q_rr = 58 nC (typ.) at I_F = 10 A and dI/dt = 100 A/μs. Its V_SD = 0.72 V (typ.) at I_S = 5 A further minimizes reverse conduction loss - confirmed in Vishay's application notes for LLC and phase-shifted full-bridge topologies using SIJA54DP-T1-GE3.

What packaging and environmental compliance does SIJA54DP-T1-GE3 meet?

SIJA54DP-T1-GE3 is supplied in tape-and-reel format (T1) as a lead (Pb)-free and halogen-free device, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912. The PowerPAK® SO-8L Single package uses matte tin (Sn) termination finish and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), with peak reflow temperature rated at 260 °C.

SIJA54DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.35mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 104 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 36.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJA54DP-T1-GE3 FAQ

1.How can I place an order for SIJA54DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJA54DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJA54DP-T1-GE3 reliable?

The price and inventory of SIJA54DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA54DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJA54DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA54DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJA54DP-T1-GE3?

SIJA54DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJA54DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJA54DP-T1-GE3?

For technical support, including SIJA54DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA54DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJA54DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJA54DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA54DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJA54DP-T1-GE3?

All SIJA54DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA54DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJA54DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJA54DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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