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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJA58ADP-T1-GE3

Name: SIJA58ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJA58ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJA58ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJA58ADP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 32.3A/109A PPAK

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Product details

Overview

SIJA58ADP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering R_DS(on) = 2.65 mΩ at V_GS = 10 V and 3.95 mΩ at V_GS = 4.5 V, with 109 A continuous drain current (T_J = 150 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIJA58ADP-T1-GE3 datasheet, SIJA58ADP-T1-GE3 pinout, SIJA58ADP-T1-GE3 application, or SIJA58ADP-T1-GE3 equivalent, key selection criteria include its low Q_g (18.5 nC typ. at 4.5 V), Q_gd/Q_gs ratio < 1, 100 % R_g and UIS tested reliability, and thermal resistance R_thJC = 1.7 °C/W (typ.) for high-power-density thermal management.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low gate charge and output capacitance-Q_g = 18.5 nC (V_GS = 4.5 V), C_iss = 3030 pF, C_oss = 550 pF-enabling fast switching with minimal losses in hard-switched topologies. Its Q_gd/Q_gs ratio of 0.018–0.036 suppresses Miller-induced turn-on risk during high di/dt transitions.

The device integrates a robust body diode with t_rr = 29 ns (typ.), Q_rr = 17 nC (typ.), and V_SD = 0.73 V (typ. at I_S = 5 A), supporting efficient reverse recovery in synchronous buck and LLC resonant converters. It is rated for 150 °C maximum junction temperature and qualified per JEDEC JESD47 stress testing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 24 V input bus systems
R_DS(on) max @ 10 V	2.65 mΩ - Enables ≤ 2.9 W conduction loss at 100 A, critical for >95 % efficiency in high-current DC/DC stages
R_DS(on) max @ 4.5 V	3.95 mΩ - Ensures stable on-state performance with logic-level gate drivers (e.g., integrated controller outputs)
Q_g typ. @ 4.5 V	18.5 nC - Reduces gate drive power and enables operation up to 1 MHz without excessive driver heating
I_D continuous @ T_C = 25 °C	109 A - Supports high-current single-phase power stages without paralleling
R_thJC max	2.2 °C/W - Allows direct heatsink mounting for thermal management in compact industrial and telecom power supplies
V_GS(th)	1.1–2.4 V - Ensures reliable turn-on with standard 3.3 V or 5 V control signals while minimizing false triggering

Pinout & Package

SIJA58ADP-T1-GE3 is housed in a leadless PowerPAK® SO-8L package (5.13 mm × 6.15 mm footprint, 1.07 mm height), featuring exposed copper drain pads on the bottom side for low-inductance, high-current routing and enhanced thermal transfer to PCB copper planes.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source terminals tied internally; provide low-impedance return path and thermal conduction to PCB ground plane
5	Gate (G)	Single gate input with R_g = 0.5–2.5 Ω; optimized for low-noise, high-speed switching with minimal ringing
6	Drain (D)	Exposed copper drain pad on bottom surface; primary high-current output and thermal interface to heatsink or inner-layer copper

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 25 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation, directly improving converter efficiency and power density
Q_gd/Q_gs ratio < 1	Reduces Miller plateau duration and eliminates need for negative gate turn-off in high-side configurations
100 % R_g and UIS tested	Guarantees gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress
Flexible leads	Accommodates mechanical board flexure without solder joint fatigue-critical for automotive and industrial vibration environments
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc. 99912)

Applications

Synchronous Rectification	High-Power-Density DC/DC
Use Scenario: Secondary-side switch in isolated 48 V–12 V or 12 V–3.3 V synchronous buck converters for server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Achieves 0.73 V body diode forward drop and 29 ns reverse recovery time, enabling >97 % peak efficiency at 100 A output with minimal voltage overshoot.	Use Scenario: Primary-side high-side switch in compact 1 kW telecom rectifiers using half-bridge topology. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by isolated gate driver, handling 109 A pulsed currents with low Q_g. Use Value: 18.5 nC total gate charge and 2.65 mΩ R_DS(on) minimize combined conduction and switching losses, allowing 500 kHz+ operation without excessive thermal derating.
DC/AC Inverters	Industrial Motor Drives
Use Scenario: Phase-leg switch in 3-phase 400 V grid-tied solar microinverters with SiC gate drivers. IC Role / Device Role / Timing Role: High-efficiency, low-R_DS(on) N-channel switch operating in hard-switched PWM mode at 20–50 kHz. Use Value: 150 A pulsed drain current rating and 45 mJ single-pulse avalanche energy support short-circuit withstand capability during fault events.	Use Scenario: Output stage switch in compact servo drives for robotics requiring high torque at low speed. IC Role / Device Role / Timing Role: Low-voltage, high-current power switch in H-bridge configuration with bidirectional current flow. Use Value: 51.6 A continuous source-drain diode current and 0.73 V V_SD enable efficient freewheeling without external diodes, reducing BOM count and layout area.

Synchronous Rectification

High-Power-Density DC/DC

Use Scenario: Secondary-side switch in isolated 48 V–12 V or 12 V–3.3 V synchronous buck converters for server VRMs and AI accelerators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Achieves 0.73 V body diode forward drop and 29 ns reverse recovery time, enabling >97 % peak efficiency at 100 A output with minimal voltage overshoot.

Use Scenario: Primary-side high-side switch in compact 1 kW telecom rectifiers using half-bridge topology.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by isolated gate driver, handling 109 A pulsed currents with low Q_g.

Use Value: 18.5 nC total gate charge and 2.65 mΩ R_DS(on) minimize combined conduction and switching losses, allowing 500 kHz+ operation without excessive thermal derating.

DC/AC Inverters

Industrial Motor Drives

Use Scenario: Phase-leg switch in 3-phase 400 V grid-tied solar microinverters with SiC gate drivers.

IC Role / Device Role / Timing Role: High-efficiency, low-R_DS(on) N-channel switch operating in hard-switched PWM mode at 20–50 kHz.

Use Value: 150 A pulsed drain current rating and 45 mJ single-pulse avalanche energy support short-circuit withstand capability during fault events.

Use Scenario: Output stage switch in compact servo drives for robotics requiring high torque at low speed.

IC Role / Device Role / Timing Role: Low-voltage, high-current power switch in H-bridge configuration with bidirectional current flow.

Use Value: 51.6 A continuous source-drain diode current and 0.73 V V_SD enable efficient freewheeling without external diodes, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 3.1 mΩ @ 10 V; Q_g = 21 nC @ 4.5 V; PowerSO-8 package (larger footprint, higher R_thJA)	Higher conduction loss and slower switching limit use in >300 kHz designs; less suitable for ultra-thin PCBs	Prefer SIJA58ADP-T1-GE3 where board space, thermal performance, or switching frequency exceed IRF6642TRPBF limits.
DMTH4007LPSQ-13	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 20.5 nC @ 4.5 V; same PowerPAK SO-8L footprint but AEC-Q101 qualified	Automotive-qualified variant with tighter parametric screening; higher cost for non-automotive use	Select SIJA58ADP-T1-GE3 for cost-sensitive industrial/commercial power supplies where AEC-Q101 is not required.

Compared with IRF6642TRPBF and DMTH4007LPSQ-13, SIJA58ADP-T1-GE3 offers the lowest R_DS(on) × Q_g product (10.4 mΩ·nC), best thermal resistance (R_thJC = 1.7 °C/W typ.), and highest continuous current rating (109 A), making it optimal for space-constrained, high-efficiency power conversion where automotive qualification is unnecessary.

Availability

SIJA58ADP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC, and DC/AC inverter applications requiring stable component supply, long-term production continuity, and traceable sourcing.

Supply support for SIJA58ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIJA58ADP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV Power MOSFET family, engineered specifically for high-frequency, high-current power conversion in data center, telecom, and industrial power supplies where low R_DS(on), low Q_g, and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SIJA58ADP-T1-GE3 at case temperature of 25 °C?

The SIJA58ADP-T1-GE3 has a maximum continuous drain current (I_D) rating of 109 A when the case temperature (T_C) is maintained at 25 °C, as specified in the Absolute Maximum Ratings table under steady-state conditions with proper heatsinking. This rating assumes TJ ≤ 150 °C and reflects the device's capability in high-current power stages without paralleling.

Does SIJA58ADP-T1-GE3 support logic-level gate drive at 4.5 V?

Yes, SIJA58ADP-T1-GE3 is fully characterized for logic-level operation: its R_DS(on) is guaranteed at 3.95 mΩ max with V_GS = 4.5 V and I_D = 10 A, and its gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.4 V, ensuring robust turn-on with standard 3.3 V or 4.5 V controllers without requiring level-shifting circuitry.

What is the thermal resistance from junction to case (R_thJC) for SIJA58ADP-T1-GE3?

The SIJA58ADP-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.7 °C/W and a maximum of 2.2 °C/W, measured from junction to the exposed drain pad. This low value enables efficient heat transfer to external heatsinks or internal PCB copper layers, supporting high-power operation in thermally constrained designs.

Is SIJA58ADP-T1-GE3 suitable for synchronous rectification in high-frequency DC/DC converters?

Yes, SIJA58ADP-T1-GE3 is explicitly designed for synchronous rectification, with features including low Q_g (18.5 nC typ. at 4.5 V), low Q_gd/Q_gs ratio (< 1), and fast body diode recovery (t_rr = 29 ns typ.). These parameters minimize switching losses and ensure stable operation in high-frequency (≥500 kHz) buck and flyback converters.

What package type does SIJA58ADP-T1-GE3 use, and what are its key mechanical dimensions?

SIJA58ADP-T1-GE3 uses the PowerPAK® SO-8L leadless package, measuring 5.13 mm × 6.15 mm (typ.) in footprint and 1.07 mm in height. The package features an exposed copper drain pad on the bottom surface for low-inductance current paths and enhanced thermal conduction, with standardized pad layout per Vishay document 63818.

SIJA58ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 32.3A (Ta), 109A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.65mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3030 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJA58ADP-T1-GE3 FAQ

1.How can I place an order for SIJA58ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJA58ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJA58ADP-T1-GE3 reliable?

The price and inventory of SIJA58ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA58ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJA58ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA58ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJA58ADP-T1-GE3?

SIJA58ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJA58ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJA58ADP-T1-GE3?

For technical support, including SIJA58ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA58ADP-T1-GE3 requirements.

6.How does Aetrix verify that SIJA58ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJA58ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA58ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJA58ADP-T1-GE3?

All SIJA58ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA58ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJA58ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJA58ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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