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Vishay Siliconix SIJA58DP-T1-GE3
- Part No.:
- SIJA58DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJA58DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,863
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Product details
Overview
SIJA58DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, rated for 109 A continuous drain current at TC = 25 °C, with RDS(on) = 2.65 mΩ at VGS = 10 V and 3.60 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIJA58DP-T1-GE3 datasheet, SIJA58DP-T1-GE3 pinout, SIJA58DP-T1-GE3 application, or SIJA58DP-T1-GE3 equivalent, this device delivers low RDS(on)-Qoss figure-of-merit, Qgd/Qgs < 1 for fast switching, 100 % Rg and UIS testing, and operation up to +150 °C junction temperature - critical for high-power-density industrial and automotive power stages.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology with tuned gate charge distribution (Qgd = 4.3 nC, Qgs = 10.3 nC) to minimize switching losses in hard-switched and synchronous rectifier topologies. Its low output capacitance (Coss = 560 pF at VDS = 20 V) and fast body diode recovery (trr = 38 ns, Qrr = 33 nC) support high-frequency operation in isolated and non-isolated DC/DC converters.
The PowerPAK® SO-8L leadless package provides low thermal resistance (RthJC = 1.7 °C/W typical) and high current capability via exposed copper drain pad. It requires reflow-only assembly per JEDEC J-STD-020, with peak solder temperature of 260 °C - manual iron soldering is not recommended due to thermal mass and solder fillet uncertainty at exposed copper terminations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum blocking voltage for 12 V–24 V input bus applications with margin against transients |
| RDS(on) @ 10 V | 2.65 mΩ max - enables <1.5 W conduction loss at 80 A, supporting high-current synchronous rectifiers |
| RDS(on) @ 4.5 V | 3.60 mΩ max - ensures robust turn-on with 5 V gate drive in logic-level control circuits |
| Qg | 23 nC typ. at 4.5 V - low total gate charge reduces driver power and enables >1 MHz switching in LLC resonant converters |
| ID (cont.) | 109 A at TC = 25 °C - supports high-current single-phase outputs without paralleling |
| TJ range | −55 to +150 °C - qualified for under-hood automotive and industrial environments requiring extended thermal operation |
| EAS | 45 mJ - avalanche-rated for unclamped inductive switching stress in motor drives and power supplies |
Pinout & Package
SIJA58DP-T1-GE3 uses the PowerPAK® SO-8L single-die leadless package (5.13 mm × 6.15 mm footprint), featuring an exposed copper drain pad on the bottom side for thermal and electrical connection. The top-side terminals are arranged in a standard SO-8L layout with three source pins (1, 2, 3), one gate pin (4), and one drain pad (bottom-side only).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (Top-side) | Source | Three parallel source connections reduce package inductance and improve current sharing in high-di/dt applications |
| 4 (Top-side) | Gate | Single gate input with Rg = 0.5–2.4 Ω - compatible with standard gate drivers without external series resistance |
| Bottom-side copper area | Drain | Exposed drain pad serves as primary thermal path to PCB copper; no plated finish - solder fillet not required for reliability |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Optimized for lowest RDS(on)–Qoss FOM, enabling higher efficiency than prior generations at 40 V class |
| Qgd/Qgs < 1 | Reduces Miller plateau duration and improves controllability during hard switching transitions |
| 100 % Rg and UIS tested | Ensures gate robustness and ruggedness against overvoltage and short-circuit events in production systems |
| Body diode trr = 38 ns | Minimizes reverse recovery loss and EMI in synchronous rectifier mode, especially at >300 kHz |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912) |
Applications
| Synchronous Rectifier in Isolated DC/DC | High-Power-Density Telecom PSU |
|---|---|
|
Use Scenario: Secondary-side switch in 48 V–12 V isolated buck-derived converter delivering 100+ A at 96 % efficiency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop and reduce conduction loss. Use Value: 2.65 mΩ RDS(on) cuts conduction loss by >60 % vs. 40 V Schottky, enabling >100 A output without forced air cooling. |
Use Scenario: Primary-side high-side switch in 3 kW telecom rectifier with interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-current, high-frequency switching element in LLC half-bridge resonant tank. Use Value: 23 nC Qg at 4.5 V allows efficient drive with integrated gate drivers, supporting >500 kHz operation while maintaining ZVS. |
| DC/AC Inverter for Energy Storage | Industrial Motor Drive Half-Bridge |
|
Use Scenario: Low-side switch in 400 V battery-fed string inverter stage converting DC to 230 V AC grid output. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in bidirectional energy flow path with active freewheeling. Use Value: 45 mJ EAS rating withstands unclamped inductive turn-off during fault conditions, improving system safety margin. |
Use Scenario: Phase-leg switch in 3-phase 400 V industrial servo drive delivering 30 A RMS per phase. IC Role / Device Role / Timing Role: N-channel MOSFET in high-side configuration with bootstrap gate drive. Use Value: 150 °C max TJ and 1.7 °C/W RthJC enable sustained 87.3 A at TC = 70 °C, reducing heatsink size by 35 % vs. legacy packages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7832TRPBF | RDS(on) = 2.8 mΩ @ 10 V; Qg = 32 nC; SO-8 package with gull-wing leads | Higher gate charge increases driver loss; leaded package limits thermal performance and high-frequency layout | Prefer SIJA58DP-T1-GE3 where board space, thermal density, or >300 kHz switching is required |
| DMTH4007LPS-13 | RDS(on) = 2.7 mΩ @ 10 V; Qg = 26 nC; PowerFLAT™ 5×6 package with dual-sided cooling | Similar RDS(on) but higher Qg; different footprint and thermal interface geometry | Choose SIJA58DP-T1-GE3 when leveraging existing PowerPAK® SO-8L layout or requiring lower Qgd/Qgs ratio |
Compared with IRF7832TRPBF and DMTH4007LPS-13, SIJA58DP-T1-GE3 offers the lowest RDS(on)–Qoss FOM and tightest Qgd/Qgs ratio among 40 V SO-8L-compatible devices, making it optimal for high-efficiency, high-frequency synchronous rectification where gate drive loss and Miller-induced shoot-through risk must be minimized.
Availability
SIJA58DP-T1-GE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, synchronous rectifier modules, and DC/AC inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.
Supply support for SIJA58DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across automotive, industrial, and computing markets.
The SIJA58DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for ultra-low RDS(on)–Qoss trade-offs in high-current, high-frequency power conversion stages where thermal density and switching loss dominate system design.
FAQ
What is the maximum continuous drain current rating for SIJA58DP-T1-GE3 at case temperature of 70 °C?
The SIJA58DP-T1-GE3 is rated for 87.3 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 109 A rating at TC = 25 °C and accounts for thermal resistance and safe operating area constraints. Designers must verify PCB copper area and airflow to maintain case temperature within this limit during full-load operation.
Does SIJA58DP-T1-GE3 support 5 V gate drive in logic-level applications?
Yes, SIJA58DP-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) guaranteed at 3.60 mΩ max. Its gate threshold voltage (VGS(th)) ranges from 1.1 V to 2.4 V, ensuring reliable enhancement-mode turn-on with standard 5 V microcontroller or gate driver outputs. The low Qg (23 nC typ. at 4.5 V) further supports efficient drive without excessive gate resistor sizing.
What is the thermal resistance from junction to case (RthJC) for SIJA58DP-T1-GE3?
The SIJA58DP-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.7 °C/W, with a maximum of 2.2 °C/W, measured from junction to the exposed drain pad. This low value is enabled by the PowerPAK® SO-8L's direct copper thermal path and is critical for high-power designs where heatsinking is applied to the PCB bottom layer beneath the device.
Is SIJA58DP-T1-GE3 suitable for avalanche energy handling in inductive switching applications?
Yes, SIJA58DP-T1-GE3 is rated for 30 A single-pulse avalanche current (IAS) and 45 mJ single-pulse avalanche energy (EAS) under specified test conditions (L = 0.1 mH). These values confirm its ability to safely absorb inductive energy during unclamped inductive switching events, such as those occurring in motor drive half-bridges or relay driving circuits.
What is the body diode forward voltage (VSD) of SIJA58DP-T1-GE3 at 5 A and room temperature?
The body diode forward voltage (VSD) of SIJA58DP-T1-GE3 is specified as 0.73 V typical and 1.1 V maximum at IS = 5 A and VGS = 0 V, measured at TJ = 25 °C. This low VSD contributes to reduced freewheeling loss in synchronous rectifier and H-bridge configurations where the intrinsic diode conducts during dead-time intervals.
SIJA58DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3750 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27.7W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJA58DP-T1-GE3 FAQ
1.How can I place an order for SIJA58DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJA58DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJA58DP-T1-GE3 reliable?
The price and inventory of SIJA58DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA58DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJA58DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA58DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJA58DP-T1-GE3?
SIJA58DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJA58DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJA58DP-T1-GE3?
For technical support, including SIJA58DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA58DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJA58DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJA58DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA58DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJA58DP-T1-GE3?
All SIJA58DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA58DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJA58DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJA58DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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