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Vishay Siliconix SIJA72ADP-T1-GE3
- Part No.:
- SIJA72ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJA72ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 27.9A/96A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,528
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Product details
Overview
SIJA72ADP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, delivering RDS(on) = 3.42 mΩ at VGS = 10 V and 4.78 mΩ at VGS = 4.5 V, with 14.8 nC total gate charge and 96 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification and DC/DC conversion.
For engineers reviewing the SIJA72ADP-T1-GE3 datasheet, SIJA72ADP-T1-GE3 pinout, SIJA72ADP-T1-GE3 application, or SIJA72ADP-T1-GE3 equivalent, key selection criteria include low RDS(on)-Qoss figure of merit, Qgd/Qgs ratio < 1 for fast switching, 100% Rg and UIS testing, and thermal resistance RthJC = 1.8 °C/W for high-power-density thermal management.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to minimize conduction and switching losses simultaneously. Its low RDS(on) at both 10 V and 4.5 V gate drive supports efficient operation across standard logic-level and higher-voltage gate drivers.
The device features a Qgd/Qgs ratio below 1, which reduces Miller plateau duration and improves turn-off control. It is fully characterized for avalanche energy (EAS = 11.25 mJ) and includes 100% gate resistance (Rg) and unclamped inductive switching (UIS) screening for robustness in hard-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V–24 V input systems with margin. |
| RDS(on) @ VGS = 10 V | 3.42 mΩ - Enables ≤ 3.3 W conduction loss at 100 A, critical for high-current synchronous rectifiers. |
| RDS(on) @ VGS = 4.5 V | 4.78 mΩ - Ensures stable on-resistance with 3.3 V or 5 V gate drive, supporting logic-level controller compatibility. |
| Qg typ. | 14.8 nC - Low gate charge enables fast switching with reduced driver power demand and lower Esw. |
| ID cont. (TC = 25 °C) | 96 A - Supports high-current power stages without parallel devices in compact DC/DC modules. |
| RthJC max. | 2.2 °C/W - Allows direct heatsinking to PCB copper or external heatsink for thermal management in >100 W designs. |
| EAS | 11.25 mJ - Rated single-pulse avalanche capability ensures reliability during transient overvoltage events in inductive loads. |
Pinout & Package
SIJA72ADP-T1-GE3 uses the leadless PowerPAK® SO-8L package (5.13 mm × 6.15 mm footprint), with exposed drain paddle on bottom side for low thermal resistance and high-current handling. The package is Pb-free and halogen-free per Vishay's material compliance standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1/2/3/4/7/8 are internally tied to source terminal and thermal pad - used for low-inductance source return and PCB thermal conduction. |
| 5 | Gate (G) | Control terminal; requires <2.6 Ω gate resistance (Rg) for optimal switching speed and oscillation suppression. |
| 6 | Drain (D) | Main power output node; connected to exposed copper drain paddle on bottom - must be soldered to large copper area for thermal and current path integrity. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers lowest RDS(on)-Qoss FOM among 40 V SO-8L MOSFETs, reducing combined conduction and switching losses. |
| Qgd/Qgs ratio < 1 | Minimizes Miller effect during turn-off, enabling clean, predictable switching in high-dV/dt environments like LLC resonant converters. |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates outliers in gate resistance that cause shoot-through risk in half-bridge configurations. |
| 100 % UIS tested | Guarantees ruggedness under unclamped inductive switching stress, critical for motor drives and DC/AC inverters without snubbers. |
| Optimized body diode | VSD = 0.74 V (typ.) and trr = 22 ns (typ.) enable efficient reverse recovery in synchronous rectifier mode with low reverse recovery loss. |
Applications
| Synchronous Rectification | High-Power-Density DC/DC |
|---|---|
|
Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived or forward converters for server VRMs and telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95%. Use Value: 3.42 mΩ RDS(on) cuts conduction loss by >60% vs. typical 40 V Schottky, directly enabling >100 A output in 10 mm × 10 mm footprint. |
Use Scenario: Primary- or secondary-side switch in 300–600 W quarter-brick or half-brick DC/DC modules targeting datacenter and AI accelerator power. IC Role / Device Role / Timing Role: High-current power switch in interleaved or phase-shifted full-bridge topologies operating up to 500 kHz. Use Value: 14.8 nC Qg and 2.2 °C/W RthJC allow high-frequency operation with minimal driver loss and direct thermal path to heatsink. |
| DC/AC Inverters | Battery & Load Switch |
|
Use Scenario: Half-bridge leg in 1–3 kW micro-inverters or UPS inverters converting 48 V battery or PV input to 120/230 V AC. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated power switch handling bidirectional current and inductive kickback. Use Value: 11.25 mJ EAS rating and 100% UIS screening ensure reliable operation during grid fault conditions without external clamping. |
Use Scenario: High-side or low-side load switch controlling power delivery to industrial sensors, actuators, or USB-C PD ports. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays or discrete FET arrays, providing controlled inrush and fault protection. Use Value: 4.78 mΩ RDS(on) at 4.5 V gate drive enables direct control from MCU GPIO or PMIC, eliminating level-shifter need. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8721PBF | RDS(on) = 3.8 mΩ @ 10 V; Qg = 22 nC; TO-220AB package; RthJC = 1.25 °C/W but larger footprint and through-hole mounting. | Higher thermal performance but unsuitable for space-constrained surface-mount designs; less optimized for high-frequency switching due to higher Qg. | Select when board-level heatsinking is available and layout allows through-hole assembly; avoid for ultra-thin or high-density DC/DC modules. |
| SIS890DN-T1-GE3 | RDS(on) = 3.2 mΩ @ 10 V; Qg = 16.5 nC; same PowerPAK SO-8L package; slightly lower RDS(on) but higher Qg and no Qgd/Qgs < 1 specification. | Marginally better conduction loss but slower switching edge control; not screened for UIS or Rg, limiting use in ruggedized inverters. | Prefer for pure low-RDS(on) priority in non-avalanche-critical applications; SIJA72ADP-T1-GE3 remains superior for synchronous rectification with tight timing control. |
Compared with IRL8721PBF and SIS890DN-T1-GE3, SIJA72ADP-T1-GE3 uniquely combines ultra-low RDS(on)-Qoss FOM, Qgd/Qgs < 1, and 100% UIS/Rg screening - making it the only option qualified for high-reliability, high-frequency synchronous rectification in thermally constrained, surface-mount power stages.
Availability
SIJA72ADP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC conversion, and battery/load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for SIJA72ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIJA72ADP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency power conversion in server, telecom, and industrial systems where low RDS(on)-Qoss and avalanche robustness are mandatory.
FAQ
What is the maximum continuous drain current for SIJA72ADP-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SIJA72ADP-T1-GE3 is 77 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package under sustained power dissipation; actual usable current depends on PCB copper area, airflow, and ambient temperature. SIJA72ADP-T1-GE3 maintains RDS(on) stability across this range due to its low RthJC of 1.8 °C/W.
Does SIJA72ADP-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, SIJA72ADP-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 4.78 mΩ (max), making it compatible with 3.3 V logic-level gate drivers when operated with sufficient gate drive strength. While not rated at exactly 3.3 V, its VGS(th) range (1.0–2.4 V) and low Qg (14.8 nC) ensure robust turn-on with margin. SIJA72ADP-T1-GE3 should be verified with actual driver rise time and layout parasitics in final design.
What is the significance of the Qgd/Qgs ratio being less than 1 for SIJA72ADP-T1-GE3?
A Qgd/Qgs ratio < 1 in SIJA72ADP-T1-GE3 reduces Miller plateau duration during turn-off, minimizing voltage overshoot and improving switching predictability in hard-switching topologies. This feature directly enhances reliability in synchronous rectifiers and half-bridges where precise timing control prevents shoot-through. SIJA72ADP-T1-GE3 achieves this via optimized trench cell geometry, distinguishing it from generic 40 V MOSFETs.
Is SIJA72ADP-T1-GE3 suitable for avalanche-prone circuits like motor drives?
Yes, SIJA72ADP-T1-GE3 is 100% unclamped inductive switching (UIS) tested and rated for 11.25 mJ single-pulse avalanche energy (EAS). This makes it suitable for motor drive half-bridges and DC/AC inverters where inductive load switching generates voltage spikes. SIJA72ADP-T1-GE3's avalanche rating is validated per JEDEC JESD24-1, ensuring robustness without external snubbers in properly designed layouts.
How does the PowerPAK SO-8L package of SIJA72ADP-T1-GE3 impact thermal design?
The PowerPAK SO-8L package of SIJA72ADP-T1-GE3 features an exposed drain paddle on the bottom side, enabling direct thermal conduction to PCB copper or external heatsinks. With RthJC = 1.8 °C/W (typ.), SIJA72ADP-T1-GE3 delivers superior junction-to-case thermal performance versus standard SO-8. Designers must follow Vishay's recommended pad pattern (Doc. #63818) and ensure full solder coverage of the drain paddle for optimal thermal and electrical performance.
SIJA72ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 27.9A (Ta), 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.42mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2530 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJA72ADP-T1-GE3 FAQ
1.How can I place an order for SIJA72ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJA72ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJA72ADP-T1-GE3 reliable?
The price and inventory of SIJA72ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA72ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJA72ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA72ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJA72ADP-T1-GE3?
SIJA72ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJA72ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJA72ADP-T1-GE3?
For technical support, including SIJA72ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA72ADP-T1-GE3 requirements.
6.How does Aetrix verify that SIJA72ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJA72ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA72ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJA72ADP-T1-GE3?
All SIJA72ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA72ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJA72ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJA72ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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