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Vishay Siliconix SIJA74DP-T1-GE3
- Part No.:
- SIJA74DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIJA74DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 24A/81.2A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,121
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Product details
Overview
SIJA74DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, rated for 81.2 A continuous drain current at TC = 25 °C, with RDS(on) of 3.99 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIJA74DP-T1-GE3 datasheet, SIJA74DP-T1-GE3 pinout, SIJA74DP-T1-GE3 application, or SIJA74DP-T1-GE3 equivalent, this device supports high-power-density SMPS, inverters, and board-level thermal resilience via flexible leads and wave-soldering optimization - critical for industrial and telecom power systems requiring low RDS-Qoss FOM and 150 °C junction operation.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low on-resistance and optimized gate charge profile, with Qgd/Qgs ratio < 1 ensuring fast, low-loss switching transitions. Its 100 % Rg and UIS testing ensures robustness in hard-switching and avalanche-prone topologies.
The PowerPAK® SO-8L leadless package delivers low thermal resistance (RthJC = 2.1 °C/W typical) and enhanced board-level reliability under mechanical stress, while its exposed copper drain pad enables efficient heat transfer without requiring solder fillet at the terminal edge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V–24 V input bus applications |
| RDS(on) @ 10 V | 3.99 mΩ max - Enables <1 W conduction loss at 50 A in high-current synchronous rectifiers |
| RDS(on) @ 4.5 V | 6.0 mΩ max - Supports logic-level gate drive in compact, low-voltage control circuits |
| Qg | 12.4 nC typ. @ 4.5 V - Low total gate charge reduces driver power and switching energy |
| ID (TC = 25 °C) | 81.2 A - High continuous current rating suitable for primary-side switching in 300–500 W converters |
| RthJC | 2.1 °C/W typical - Enables direct heatsinking to PCB copper or external metal core for thermal management |
| Qgd/Qgs | < 1 - Minimizes Miller-induced switching delay and improves EMI behavior in hard-switched converters |
Pinout & Package
Package: PowerPAK® SO-8L - leadless surface-mount package with exposed copper drain pad (bottom side), 5.13 mm × 6.15 mm footprint, 1.07 mm height, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source terminals - parallel connection lowers effective source inductance and improves current sharing |
| 5 | Gate (G) | Single gate input - low Rg (0.8–2.5 Ω) minimizes gate ringing and driver loss |
| 6 | Drain (D) | Exposed copper drain pad - primary thermal path to PCB; no solder fillet required at edge per spec |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers lowest RDS-Qoss figure-of-merit for high-frequency, high-efficiency power conversion |
| Qgd/Qgs ratio < 1 | Reduces Miller plateau duration and improves controllability during turn-off in hard-switched topologies |
| Flexible leads | Increases mechanical resilience to board flexing and thermal cycling fatigue in automotive and industrial modules |
| 100 % Rg and UIS tested | Ensures gate robustness and single-pulse avalanche capability up to 20 mJ for reliable overvoltage handling |
| Optimized for wave soldering | Validated reflow profile eliminates voiding risk in high-volume manufacturing of power boards |
Applications
| Synchronous Rectification | High-Power-Density DC/DC |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived converters for server VRMs and telecom PSUs. IC Role / Device Role / Timing Role: N-channel synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95 %. Use Value: 3.99 mΩ RDS(on) at 10 V enables <0.5 W loss at 30 A, directly increasing system efficiency and reducing heatsink requirements. |
Use Scenario: Primary-side high-side switch in 300–500 W half-bridge or LLC resonant converters for data center power supplies. IC Role / Device Role / Timing Role: Fast-switching, low-RDS(on) power switch operating at 100–300 kHz with minimal switching loss. Use Value: 12.4 nC Qg at 4.5 V allows use with low-power gate drivers, reducing driver stage complexity and BOM count. |
| DC/AC Inverters | Switch Mode Power Supplies |
Use Scenario: H-bridge leg in 1–3 kVA solar microinverters and UPS output stages. IC Role / Device Role / Timing Role: High-current, 150 °C-rated MOSFET handling bidirectional current and repetitive avalanche stress. Use Value: 20 mJ single-pulse avalanche energy rating and 150 A IDM support safe operation during grid fault transients. |
Use Scenario: Main switch in industrial AC/DC front-end PFC stages and offline flyback converters. IC Role / Device Role / Timing Role: Robust, thermally stable switching element with 75 °C/W RthJA (t < 10 s) for natural-convection-cooled designs. Use Value: 150 °C TJ max and -55 °C to +150 °C operating range enable deployment in harsh ambient environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 4.5 mΩ @ 10 V; Qg = 29 nC; TO-252 package; higher RthJA (62 °C/W) | Lower current density, less suitable for space-constrained 50+ A designs | Prefer SIJA74DP-T1-GE3 where board area, thermal performance, and switching speed are critical |
| SiR626DP-T1-GE3 | RDS(on) = 3.7 mΩ @ 10 V; Qg = 13.5 nC; same PowerPAK SO-8L package; 40 V rating | Nearly identical footprint and performance; slightly lower RDS(on) but marginally higher Qg | Drop-in alternative if tighter RDS(on) tolerance or alternate supply chain is needed |
Compared with IRF7470PBF, SIJA74DP-T1-GE3 offers 15 % lower RDS(on), 57 % lower Qg, and 17 % better thermal resistance - enabling smaller heatsinks and higher frequency operation. Against SiR626DP-T1-GE3, it trades 0.2 mΩ higher RDS(on) for proven 100 % UIS testing and optimized Qgd/Qgs ratio, improving hard-switching reliability.
Availability
SIJA74DP-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, high-power-density DC/DC conversion, and industrial switch-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIJA74DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial, computing, and automotive markets.
The SIJA74DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency power conversion where low RDS-Qoss FOM and rugged avalanche performance are essential.
FAQ
What is the maximum continuous drain current rating for SIJA74DP-T1-GE3 at 70 °C case temperature?
The SIJA74DP-T1-GE3 supports 64.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures safe operation under sustained load conditions without exceeding 150 °C junction temperature. The SIJA74DP-T1-GE3 maintains full functionality across its entire -55 °C to +150 °C operating range.
Does SIJA74DP-T1-GE3 require a solder fillet at the exposed copper drain pad?
No, SIJA74DP-T1-GE3 does not require a solder fillet at the exposed copper drain pad. Per Vishay documentation (S20-0162-Rev. A), the end of the lead terminal is exposed copper due to singulation, and a fillet at that edge cannot be guaranteed nor is it necessary - adequate bottom-side solder interconnection is achieved through the full-pad contact area. The SIJA74DP-T1-GE3 is qualified for standard wave and reflow profiles per doc# 73257.
Is SIJA74DP-T1-GE3 suitable for avalanche-prone circuits like flyback snubbers?
Yes, SIJA74DP-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for 20 mJ single-pulse avalanche energy with 20 A IAS, making it suitable for controlled avalanche operation in flyback snubbers and other inductive switching applications. This ruggedness is confirmed in the Absolute Maximum Ratings section and validated per JEDEC JESD24-11. The SIJA74DP-T1-GE3 is designed for such stress conditions without degradation.
What is the gate-source threshold voltage range for SIJA74DP-T1-GE3?
The gate-source threshold voltage (VGS(th)) for SIJA74DP-T1-GE3 is specified from 1.0 V to 2.4 V at TJ = 25 °C, ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining noise immunity. The SIJA74DP-T1-GE3 exhibits a negative VGS(th) temperature coefficient (-6.1 mV/°C), meaning threshold decreases with rising temperature - a key factor in thermal runaway analysis.
Can SIJA74DP-T1-GE3 be used in synchronous rectification with 4.5 V gate drive?
Yes, SIJA74DP-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 6.0 mΩ max and Qg = 12.4 nC typ. at VGS = 4.5 V - enabling efficient synchronous rectification in 5 V and 3.3 V controller-based designs. Its Qgd/Qgs ratio < 1 further enhances switching control under low-VGS conditions. The SIJA74DP-T1-GE3 delivers predictable performance down to 4.5 V without compromising conduction or switching loss budgets.
SIJA74DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Ta), 81.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 3.99mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.1W (Ta), 46.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIJA74DP-T1-GE3 FAQ
1.How can I place an order for SIJA74DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJA74DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJA74DP-T1-GE3 reliable?
The price and inventory of SIJA74DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJA74DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJA74DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJA74DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJA74DP-T1-GE3?
SIJA74DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJA74DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJA74DP-T1-GE3?
For technical support, including SIJA74DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJA74DP-T1-GE3 requirements.
6.How does Aetrix verify that SIJA74DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJA74DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJA74DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJA74DP-T1-GE3?
All SIJA74DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJA74DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJA74DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJA74DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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