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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJH400E-T1-GE3

Name: SIJH400E-T1-GE3
Brand: Vishay Siliconix
SKU: SIJH400E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJH400E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 8 x 8

Datasheet:: SIJH400E-T1-GE3.pdf

Description:: N-CHANNEL 40 V (D-S) 175 C MOSFE

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Product details

Overview

SIJH400E-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® 8 × 8L package, delivering R_DS(on) = 0.52 mΩ at V_GS = 10 V and 0.74 mΩ at 4.5 V, rated for 608 A continuous drain current at T_C = 25 °C, and optimized for high-efficiency synchronous rectification in server VRMs and battery management systems.

For engineers reviewing the SIJH400E-T1-GE3 datasheet, SIJH400E-T1-GE3 pinout, SIJH400E-T1-GE3 application, or SIJH400E-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on) × Q_g figure of merit, 175 °C junction rating, leadless PowerPAK 8 × 8L thermal performance, and 100 % R_g and UIS testing for robustness in high-current switching.

Technical Context

This MOSFET employs trench gate architecture with optimized cell pitch and deep-trench isolation to achieve sub-1 mΩ on-resistance while maintaining fast switching (Q_g = 99 nC typ. at 4.5 V) and low C_iss = 15,050 pF. Its body diode exhibits t_rr = 75 ns and Q_rr = 155 nC, enabling efficient hard-switched OR-ing and synchronous rectification.

The device is characterized for operation up to 175 °C junction temperature, with R_thJC = 0.28 °C/W (typ.) and R_thJA = 36 °C/W (typ.), supporting high-power density designs where thermal management relies on direct PCB copper conduction and heatsink interface via exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 48 V intermediate bus architectures.
R_DS(on) max @ 10 V	0.52 mΩ - Enables <1 W conduction loss at 45 A, critical for high-current VRM output stages.
R_DS(on) max @ 4.5 V	0.74 mΩ - Ensures robust turn-on under low-voltage gate drive (e.g., from integrated controllers).
Q_g typ. @ 4.5 V	99 nC - Balances switching speed and gate driver power demand in 100–500 kHz applications.
I_D cont. @ T_C = 25 °C	608 A - Supports single-device use in high-current power stages without paralleling.
R_thJC typ.	0.28 °C/W - Allows >300 W dissipation with ≤85 °C case-to-ambient delta, enabling compact heatsinking.
E_AS	338 mJ - Withstands single-pulse avalanche energy during inductive turn-off transients.

Pinout & Package

SIJH400E-T1-GE3 uses the leadless PowerPAK® 8 × 8L package with bottom-side thermal pad (exposed drain), requiring solder reflow per IPC-J-STD-020 profile. The package footprint is 8 mm × 8 mm, offering 50 % smaller area than D2PAK (TO-263) while maintaining superior thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V drive; R_g = 0.2–2.2 Ω ensures stable switching with minimal ringing.
2, 3, 4 (S)	Source	Power return path; three parallel terminals reduce source inductance and improve current sharing.
Top-side K / Bottom pad (D)	Drain	Main power terminal and thermal interface; exposed copper pad enables direct PCB heat spreading.

Key Features

Feature	Design Value
TrenchFET® Gen IV architecture	Delivers industry-leading R_DS(on) × Q_g FOM for reduced total power loss in high-frequency switching.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
PowerPAK 8 × 8L package	Provides 0.28 °C/W typical R_thJC, enabling >300 W power handling with minimal thermal derating.
175 °C maximum junction temperature	Supports operation in high-ambient environments (e.g., telecom rectifiers, EV battery modules) without derating.
Low Q_rr and fast t_rr	Q_rr = 155 nC and t_rr = 75 ns minimize reverse recovery losses in synchronous rectifier topologies.

Applications

Synchronous Rectification	OR-ing Circuit
Use Scenario: High-current DC/DC converter output stage in server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: Achieves >98 % efficiency at 400 A due to 0.52 mΩ R_DS(on) and fast body diode recovery.	Use Scenario: Redundant 48 V power supply backplane in telecom infrastructure. IC Role / Device Role / Timing Role: Active OR-ing switch controlling power path selection between supplies. Use Value: Eliminates 0.4–0.7 V forward drop of diodes, reducing heat generation by >70 % at 200 A.
Motor Drive Control	Battery Management System
Use Scenario: Half-bridge high-side switch in industrial BLDC motor inverters. IC Role / Device Role / Timing Role: High-current switching element in 20–100 kHz PWM-driven H-bridge leg. Use Value: Sustains 608 A pulsed current (I_DM = 800 A) and absorbs 338 mJ avalanche energy during fault events.	Use Scenario: Cell-balancing and main contactor switch in 48 V Li-ion battery packs for ESS and e-mobility. IC Role / Device Role / Timing Role: High-reliability power switch for pack isolation and active balancing paths. Use Value: 175 °C rating and 100 % UIS test ensure long-term reliability under repeated short-circuit and hot-swap stress.

Synchronous Rectification

OR-ing Circuit

Use Scenario: High-current DC/DC converter output stage in server VRMs and AI accelerators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss.

Use Value: Achieves >98 % efficiency at 400 A due to 0.52 mΩ R_DS(on) and fast body diode recovery.

Use Scenario: Redundant 48 V power supply backplane in telecom infrastructure.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling power path selection between supplies.

Use Value: Eliminates 0.4–0.7 V forward drop of diodes, reducing heat generation by >70 % at 200 A.

Motor Drive Control

Battery Management System

Use Scenario: Half-bridge high-side switch in industrial BLDC motor inverters.

IC Role / Device Role / Timing Role: High-current switching element in 20–100 kHz PWM-driven H-bridge leg.

Use Value: Sustains 608 A pulsed current (I_DM = 800 A) and absorbs 338 mJ avalanche energy during fault events.

Use Scenario: Cell-balancing and main contactor switch in 48 V Li-ion battery packs for ESS and e-mobility.

IC Role / Device Role / Timing Role: High-reliability power switch for pack isolation and active balancing paths.

Use Value: 175 °C rating and 100 % UIS test ensure long-term reliability under repeated short-circuit and hot-swap stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 0.62 mΩ @ 10 V; Q_g = 110 nC; PowerSO-10 package (R_thJC = 0.45 °C/W).	Higher thermal resistance limits power density; suitable for lower-current (<400 A) designs with less aggressive cooling.	Choose when legacy PowerSO-10 footprint compatibility is required and thermal margin allows higher R_thJC.
IXTH30N40X2	R_DS(on) = 0.032 Ω @ 10 V; TO-247 package; 40 V rating but significantly higher on-resistance.	Not a direct replacement-designed for lower-current, higher-voltage hybrid applications; lacks 600+ A rating.	Select only if TO-247 mechanical fit is mandatory and system current is ≤30 A; otherwise not functionally comparable.

Compared with IRFH7107TRPBF and IXTH30N40X2, SIJH400E-T1-GE3 delivers the lowest R_DS(on) × Q_g FOM and highest current capability in a thermally optimized 8 × 8 mm footprint-making it uniquely suited for next-gen high-density 48 V power systems where conduction loss and thermal management dominate design constraints.

Availability

SIJH400E-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom OR-ing circuits, and EV battery contactor control requiring stable component supply, high-volume traceability, and extended lifecycle support.

Supply support for SIJH400E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIJH400E-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for ultra-high-current, high-frequency power conversion in datacenter, industrial, and automotive electrification applications.

FAQ

What is the maximum continuous drain current rating for SIJH400E-T1-GE3 at 70 °C case temperature?

The SIJH400E-T1-GE3 supports 509 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 8 × 8L package under real-world heatsink conditions and must be validated against actual board layout and airflow in the target application. SIJH400E-T1-GE3 maintains full 175 °C junction capability across this range.

Does SIJH400E-T1-GE3 have a fully lead (Pb)-free and halogen-free construction?

Yes, SIJH400E-T1-GE3 is fully lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard (document #99912). The device uses matte tin plating on terminals and lead-free solder-compatible metallization, verified per JEDEC J-STD-020 moisture sensitivity level (MSL) 3 reflow profile.

Can SIJH400E-T1-GE3 be used in avalanche-rated applications?

Yes, SIJH400E-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 338 mJ at T_J = 25 °C. This makes SIJH400E-T1-GE3 suitable for applications involving inductive load switching where voltage spikes exceed V_DS, such as motor drives and relay drivers-provided peak current and energy remain within datasheet limits.

What is the gate threshold voltage range for SIJH400E-T1-GE3, and how does it vary with temperature?

The gate-source threshold voltage V_GS(th) for SIJH400E-T1-GE3 is specified from 1.1 V to 2.4 V at T_J = 25 °C, with a negative temperature coefficient of −7.8 mV/°C. As junction temperature rises, V_GS(th) decreases linearly-ensuring reliable turn-on at elevated temperatures but requiring gate drive margin above 2.4 V for worst-case cold-start conditions.

Is manual rework recommended for SIJH400E-T1-GE3 due to its PowerPAK 8 × 8L package?

No, manual soldering with a soldering iron is not recommended for SIJH400E-T1-GE3. The PowerPAK 8 × 8L is a leadless package with an exposed copper thermal pad; proper interconnection requires controlled reflow per IPC-J-STD-020, including preheat, soak, and peak (260 °C max) profiles. Rework attempts using hand tools risk pad delamination and thermal damage to SIJH400E-T1-GE3.

SIJH400E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 8 x 8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Ta), 608A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.52mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 15050 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 385W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIJH400E-T1-GE3 FAQ

1.How can I place an order for SIJH400E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJH400E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJH400E-T1-GE3 reliable?

The price and inventory of SIJH400E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJH400E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJH400E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJH400E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJH400E-T1-GE3?

SIJH400E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJH400E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJH400E-T1-GE3?

For technical support, including SIJH400E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJH400E-T1-GE3 requirements.

6.How does Aetrix verify that SIJH400E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJH400E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJH400E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJH400E-T1-GE3?

All SIJH400E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJH400E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJH400E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJH400E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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