My Inquiry
My Account
Vishay Siliconix SIJH440E-T1-GE3
- Part No.:
- SIJH440E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SIJH440E-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 200A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:3,274
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIJH440E-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® 8 × 8L package, rated for 200 A continuous drain current at TC = 25 °C, with RDS(on) of 0.96 mΩ at VGS = 10 V and 1.15 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIJH440E-T1-GE3 datasheet, SIJH440E-T1-GE3 pinout, SIJH440E-T1-GE3 application, or SIJH440E-T1-GE3 equivalent, key selection criteria include its 175 °C junction temperature rating, low Qg (127 nC at 4.5 V), 0.95 °C/W max RthJC, and leadless PowerPAK 8 × 8L footprint-critical for high-power density industrial and battery management designs.
Technical Context
This MOSFET employs trench-based silicon architecture with optimized gate charge distribution (Qgd/Qgs ratio engineered to minimize switching loss), fully characterized for UIS and 100 % Rg tested. Its body diode exhibits trr = 92 ns and Qrr = 245 nC at IF = 20 A, supporting fast-recovery OR-ing and motor drive commutation.
The device operates across -55 °C to +175 °C junction range, with VGS(th) tightly specified from 1.0 V to 2.3 V and ΔVGS(th)/TJ = -6.6 mV/°C, enabling stable gate drive design over wide thermal conditions without external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V–36 V bus applications |
| RDS(on) @ 10 V | 0.96 mΩ - Enables <1 W conduction loss at 100 A in high-current power stages |
| RDS(on) @ 4.5 V | 1.15 mΩ - Supports logic-level gate drive in compact battery protection circuits |
| Qg @ 4.5 V | 127 nC - Determines gate driver power requirement and switching speed in 100–500 kHz converters |
| ID (continuous) | 200 A @ TC = 25 °C - Requires heatsink or PCB copper area ≥1"×1" FR4 per datasheet note b |
| RthJC | 0.95 °C/W max - Enables direct thermal path to heatsink for >100 W dissipation capability |
| Body diode VSD | 0.68 V typ @ IS = 5 A - Reduces forward drop in bidirectional current paths during dead-time conduction |
Pinout & Package
PowerPAK® 8 × 8L single-die leadless package (8.1 mm × 8.1 mm × 1.8 mm), with exposed drain paddle on bottom side for thermal and electrical connection. Top-side terminals are G (Gate), S (Source), S, S - three parallel source connections reduce source inductance and improve current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate input | Control terminal requiring ≤20 V drive; Rg = 1.7 Ω typical enables predictable turn-on/off timing |
| 2, 3, 4 (S) | Source return | Three parallel source pads minimize common-source inductance and improve EMI performance in hard-switching topologies |
| Drain (exposed paddle) | Main current output | Bottom-side copper pad serves as primary current and thermal path; no solder fillet required per note d |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Reduces Qgd by 30 % vs. prior generation, lowering Miller-induced switching loss in high-dV/dt environments |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy tolerance up to 180 mJ |
| 50 % smaller footprint than D2PAK | Enables 2× higher power density in space-constrained server VRMs and motor controllers |
| 175 °C TJ rating | Supports operation in sealed enclosures or high-ambient industrial environments without derating |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc?99912) |
Applications
| Synchronous Rectification | OR-ing Circuit |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V DC/DC converters for telecom and datacom systems. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95 %. Use Value: 0.68 V body diode forward voltage and 1.15 mΩ RDS(on) at 4.5 V enable >1.2 % efficiency gain at 60 A load vs. legacy MOSFETs. | Use Scenario: Redundant 12 V power supply inputs feeding a common bus in industrial PLC backplanes. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode controller interface for reverse-current blocking. Use Value: Ultra-low RDS(on) minimizes voltage drop (<15 mV at 50 A), preserving bus regulation while supporting hot-swap capability. |
| Motor Drive Control | Battery Management |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor drivers for HVAC blowers and power tools. IC Role / Device Role / Timing Role: High-current switching element handling PWM commutation at 20 kHz with minimal switching loss. Use Value: 200 A ID rating and 127 nC Qg allow full-load operation with gate drive ICs like Si8233, reducing thermal stress in compact motor modules. | Use Scenario: Cell-balancing and protection FET in 16-cell Li-ion battery packs for e-bikes and energy storage. IC Role / Device Role / Timing Role: Primary discharge path switch activated during overvoltage or overtemperature fault conditions. Use Value: 175 °C TJ rating ensures reliable operation under sustained fault currents; 180 mJ EAS withstands single-pulse avalanche events during cell imbalance transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7107TRPBF | RDS(on) = 1.25 mΩ @ 10 V; Qg = 110 nC; TO-263-7L package | Larger footprint (10.16 mm × 15.88 mm); higher RthJA (45 °C/W) | Prefer when existing layout uses D2PAK-7 and thermal margin allows higher junction rise |
| DMTH4007LPSQ-13 | RDS(on) = 0.75 mΩ @ 10 V; Qg = 142 nC; PowerPAK 8 × 8L package | Lower RDS(on) but higher Qg increases switching loss above 200 kHz | Prefer for ultra-low conduction loss in <100 kHz applications where gate drive strength permits |
Compared with SIJH440E-T1-GE3, IRFH7107TRPBF trades 29 % higher RDS(on) for broader package compatibility, while DMTH4007LPSQ-13 delivers 22 % lower on-resistance at the cost of 12 % higher gate charge-making SIJH440E-T1-GE3 optimal for balanced conduction/switching loss in 100–300 kHz industrial power supplies.
Availability
SIJH440E-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, OR-ing, motor drive control, and battery management applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for SIJH440E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIJH440E-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, designed specifically for high-current, high-thermal-demand applications in computing, industrial automation, and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for SIJH440E-T1-GE3?
The SIJH440E-T1-GE3 is rated for 200 A continuous drain current at case temperature TC = 25 °C, derating to 160 A at TC = 70 °C per the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" × 1" FR4) and thermal management per datasheet note b.
Does SIJH440E-T1-GE3 support logic-level gate drive?
Yes, SIJH440E-T1-GE3 supports logic-level gate drive with RDS(on) = 1.15 mΩ at VGS = 4.5 V, making it compatible with 3.3 V and 5 V microcontroller outputs when paired with appropriate gate driver buffering. Its VGS(th) range of 1.0 V to 2.3 V ensures reliable turn-on under these conditions.
What is the thermal resistance from junction to case for SIJH440E-T1-GE3?
The maximum junction-to-case (drain) thermal resistance RthJC for SIJH440E-T1-GE3 is 0.95 °C/W under steady-state conditions. This value enables efficient heat transfer to an external heatsink or thermal pad, supporting >100 W power dissipation when properly mounted.
Is SIJH440E-T1-GE3 suitable for avalanche-rated applications?
Yes, SIJH440E-T1-GE3 is 100 % UIS (unclamped inductive switching) tested with single-pulse avalanche energy EAS = 180 mJ and peak avalanche current IAS = 60 A, qualifying it for use in circuits subject to inductive load switching transients without external snubbers.
What package type does SIJH440E-T1-GE3 use, and how is it mounted?
SIJH440E-T1-GE3 uses the PowerPAK® 8 × 8L leadless package with an exposed drain paddle on the bottom. It is surface-mounted using reflow soldering per JEDEC J-STD-020 profile (peak 260 °C); manual soldering with an iron is not recommended due to thermal mass and leadless construction.
SIJH440E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.96mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 195 nC @ 4.5 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 20330 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 158W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIJH440E-T1-GE3 FAQ
1.How can I place an order for SIJH440E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJH440E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJH440E-T1-GE3 reliable?
The price and inventory of SIJH440E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJH440E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJH440E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJH440E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJH440E-T1-GE3?
SIJH440E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJH440E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJH440E-T1-GE3?
For technical support, including SIJH440E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJH440E-T1-GE3 requirements.
6.How does Aetrix verify that SIJH440E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJH440E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJH440E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJH440E-T1-GE3?
All SIJH440E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJH440E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJH440E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJH440E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIJH440E-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
