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Vishay Siliconix SIJH5100E-T1-GE3
- Part No.:
- SIJH5100E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SIJH5100E-T1-GE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:1,942
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Product details
Overview
SIJH5100E-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 175 °C TrenchFET® Gen V power MOSFET in PowerPAK® 8 × 8L package, delivering 277 A continuous drain current at TC = 25 °C, RDS(on) of 1.89 mΩ at VGS = 10 V, and 85 nC total gate charge - optimized for high-efficiency synchronous rectification and motor drive control in industrial power supplies and battery management systems.
For engineers reviewing the SIJH5100E-T1-GE3 datasheet, SIJH5100E-T1-GE3 pinout, SIJH5100E-T1-GE3 application, or SIJH5100E-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qg figure of merit, 100 % UIS-tested ruggedness, leadless PowerPAK 8 × 8L thermal performance (RthJC = 0.36 °C/W), and validated operation up to TJ = 175 °C in high-current switching nodes.
Technical Context
This MOSFET employs trench-gate silicon technology with optimized cell pitch and deep-trench doping to achieve ultra-low on-resistance while maintaining fast switching dynamics. Its gate charge profile (Qgd = 5.3 nC, Qgs = 31 nC) supports efficient hard-switching in DC-DC converters operating above 100 kHz.
The device integrates a robust body diode with trr = 135 ns (typ.) and Qrr = 220 nC (typ.) at IF = 10 A, enabling reliable OR-ing and reverse-current blocking without external Schottky assistance. Thermal design leverages the exposed-drain PowerPAK 8 × 8L footprint for direct heatsink attachment and minimal junction-to-case resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 100 V - supports 48 V and 60 V bus systems with 20 % derating margin for transients |
| RDS(on) (max) @ 10 V | 1.89 mΩ - enables <1.5 W conduction loss at 20 A, critical for high-current synchronous FETs |
| ID (cont.) @ TC = 25 °C | 277 A - allows single-device implementation in >3 kW power stages without paralleling |
| Qg (typ.) | 85 nC - balances switching loss and drive strength for gate drivers delivering ≥2 A peak |
| RthJC (max) | 0.45 °C/W - permits >300 W dissipation with modest heatsinking, reducing thermal interface complexity |
| VGS(th) range | 2–4 V - ensures clean turn-on with standard 5 V or 3.3 V logic-level controllers |
| Body diode VSD (typ.) | 0.75 V @ IS = 10 A - lowers reverse-conduction loss during dead-time in half-bridge topologies |
Pinout & Package
Package: PowerPAK® 8 × 8L - leadless, bottom-terminated surface-mount package with exposed copper drain pad (8.0 mm × 8.0 mm footprint, 1.6 mm height), optimized for high-current PCB thermal spreading and automated reflow assembly per IPC-J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source terminals | Four parallel source pads minimize source inductance and improve current sharing in high-di/dt applications |
| 5 (G) | Gate terminal | Single gate pad with low-inductance layout; requires <1.6 Ω gate resistor to limit ringing per dynamic test conditions |
| 6–8 (D) | Drain terminals (exposed pad) | Large-area copper drain pad provides primary thermal path to PCB and mechanical anchoring; no solder fillet required at edge |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Enables 1.89 mΩ RDS(on) at 100 V rating - 25 % lower on-resistance than prior-gen equivalents at same die size |
| 100 % UIS tested | Guarantees avalanche energy handling (EAS = 210 mJ) without degradation - eliminates need for external snubbers in inductive loads |
| 50 % smaller footprint vs. D2PAK | Reduces board area by 42 mm² while improving thermal resistance - enables denser power stage layouts |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E - suitable for automotive and industrial end-equipment without exemptions |
| 175 °C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments (e.g., EV charging modules, UPS inverters) |
Applications
| Synchronous Rectification | OR-ing Circuit |
|---|---|
Use Scenario: High-efficiency secondary-side switching in isolated 48 V–60 V DC-DC converters for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by transformer-coupled or controller-synchronized gate signals. Use Value: Reduces conduction loss by >60 % versus 100 V Schottky, enabling >96 % efficiency at full load with 277 A capability. |
Use Scenario: Redundant 48 V power rail combining in data center rack PDUs and battery backup systems. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with active gate control. Use Value: Eliminates forward voltage drop (vs. 0.75 V body diode drop), cutting power loss by 40 % per rail at 100 A. |
| Motor Drive Control | Battery Management |
Use Scenario: High-current half-bridge leg in 48 V BLDC motor drives for e-bikes, scooters, and industrial actuators. IC Role / Device Role / Timing Role: High-side or low-side switch in 3-phase inverter; handles PWM frequencies up to 50 kHz. Use Value: 85 nC Qg and 5.3 nC Qgd enable clean commutation with <40 ns fall time, minimizing shoot-through risk. |
Use Scenario: Main discharge/charge FET in 48 V Li-ion battery packs for energy storage and UPS systems. IC Role / Device Role / Timing Role: Bidirectional current-handling switch controlled via dedicated battery protection IC. Use Value: 303 A continuous source current and 65 A single-pulse avalanche rating protect against short-circuit faults without fuse reliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH5100TRPBF | RDS(on) = 2.0 mΩ @ 10 V; Qg = 92 nC; TO-263 (D2PAK) package; RthJC = 0.55 °C/W | Larger footprint (10.16 × 15.88 mm); higher thermal resistance limits power density in compact designs | Preferred where legacy D2PAK layout compatibility is required and space constraints are relaxed |
| IXTH50N10L2 | RDS(on) = 2.2 mΩ @ 10 V; Qg = 75 nC; TO-247AC package; RthJC = 0.40 °C/W; rated for 100 V, 50 A | Lower current rating (50 A vs. 277 A); requires paralleling for equivalent current handling | Selected when discrete TO-247 mounting and serviceability outweigh integrated thermal performance needs |
Compared with IRFH5100TRPBF and IXTH50N10L2, SIJH5100E-T1-GE3 delivers superior current density (3.4 A/mm² vs. 0.8 A/mm² and 0.2 A/mm²), lower conduction loss at system level, and simplified thermal design due to its optimized PowerPAK 8 × 8L construction - making it the preferred choice for next-generation high-power-density converters.
Availability
SIJH5100E-T1-GE3 is available at Aetrix Electronics and suitable for high-current synchronous rectification, OR-ing circuits, motor drive control, and battery management systems requiring stable component supply across industrial, telecom, and energy storage programs.
Supply support for SIJH5100E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.
The SIJH5100E-T1-GE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-current, high-frequency power conversion in space-constrained industrial and computing applications where thermal performance and ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for SIJH5100E-T1-GE3 at case temperature of 70 °C?
The SIJH5100E-T1-GE3 supports 232 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be verified against actual PCB thermal design using RthJC = 0.36 °C/W (typ.) and ambient conditions. The SIJH5100E-T1-GE3 datasheet confirms this rating is guaranteed by design and applies to steady-state conduction only.
Does SIJH5100E-T1-GE3 require special rework considerations due to its PowerPAK 8 × 8L package?
Yes - SIJH5100E-T1-GE3 uses a leadless PowerPAK 8 × 8L package with an exposed copper drain pad, and manual soldering with a soldering iron is not recommended per Vishay documentation. Rework must follow profiled reflow per J-STD-020, with peak temperature ≤260 °C. The SIJH5100E-T1-GE3 end-of-lead copper exposure means solder fillets at edges are not required or guaranteed; bottom-side interconnection relies on full-pad reflow wetting.
How does the body diode performance of SIJH5100E-T1-GE3 compare to discrete Schottky diodes in OR-ing applications?
The SIJH5100E-T1-GE3 body diode has VSD = 0.75 V (typ.) at IS = 10 A and trr = 135 ns (typ.), offering lower forward drop than many 100 V Si diodes but higher than Schottky alternatives. However, its integrated nature eliminates separate component count and layout parasitics. In OR-ing, the SIJH5100E-T1-GE3 achieves net system loss reduction by enabling active gate control - turning off the body diode during reverse current, which discrete Schottkys cannot do.
Is SIJH5100E-T1-GE3 suitable for use in automotive applications?
The SIJH5100E-T1-GE3 is not AEC-Q101 qualified and is not intended for automotive safety-critical systems. While it operates from −55 °C to +175 °C and meets RoHS/halogen-free requirements, Vishay explicitly states that its products are not designed for life-sustaining applications unless separately qualified in writing. For automotive use, SIJH5100E-T1-GE3 would require additional system-level validation and is typically deployed in non-safety automotive ancillary systems only after customer qualification.
What gate drive voltage range is recommended for reliable operation of SIJH5100E-T1-GE3?
Vishay specifies VGS = ±20 V absolute maximum, with RDS(on) characterized at VGS = 7.5 V (2.14 mΩ max) and VGS = 10 V (1.89 mΩ max). For robust turn-on and noise immunity, a nominal 10–12 V gate drive is recommended; operation at 7.5 V remains fully functional but increases conduction loss by ~13 %. The SIJH5100E-T1-GE3 gate threshold voltage (VGS(th)) ranges from 2 V to 4 V, confirming compatibility with standard 5 V and 3.3 V logic-level controllers when used with appropriate level-shifting.
SIJH5100E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Ta), 277A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.89mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 128 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6900 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIJH5100E-T1-GE3 FAQ
1.How can I place an order for SIJH5100E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJH5100E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJH5100E-T1-GE3 reliable?
The price and inventory of SIJH5100E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJH5100E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJH5100E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJH5100E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJH5100E-T1-GE3?
SIJH5100E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJH5100E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJH5100E-T1-GE3?
For technical support, including SIJH5100E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJH5100E-T1-GE3 requirements.
6.How does Aetrix verify that SIJH5100E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJH5100E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJH5100E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJH5100E-T1-GE3?
All SIJH5100E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJH5100E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJH5100E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJH5100E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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