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Vishay Siliconix SIJH5700E-T1-GE3
- Part No.:
- SIJH5700E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SIJH5700E-T1-GE3.pdf
- Description:
- N-CHANNEL 150 V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:1,978
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Product details
Overview
SIJH5700E-T1-GE3 from Vishay Siliconix is an N-channel 150 V, 175 °C power MOSFET in PowerPAK® 8 × 8L package, delivering 174 A continuous drain current at TC = 25 °C, RDS(on) of 4.1 mΩ at VGS = 10 V, and 93 nC total gate charge - optimized for high-efficiency synchronous rectification and motor drive control in industrial power supplies and battery management systems.
For engineers reviewing the SIJH5700E-T1-GE3 datasheet, SIJH5700E-T1-GE3 pinout, SIJH5700E-T1-GE3 application, or SIJH5700E-T1-GE3 equivalent, key selection criteria include its 150 V VDS rating, ultra-low RDS(on) × Qg figure of merit, 175 °C junction temperature capability, and leadless PowerPAK 8 × 8L thermal performance for high-current DC-DC and OR-ing designs.
Technical Context
This TrenchFET® Gen V MOSFET uses advanced silicon process to achieve low conduction loss (RDS(on) = 4.1 mΩ @ 10 V) and fast switching (Qgd = 8 nC, trr = 197 ns) while maintaining robust avalanche capability (EAS = 80 mJ). Its body diode exhibits low VSD = 0.75 V at 10 A and controlled reverse recovery (Qrr = 1480 nC), enabling efficient hard-switched and synchronous rectifier operation.
The device is fully characterized for high-temperature operation up to TJ = 175 °C, with VGS(th) drift of −9.5 mV/°C and RDS(on) normalized increase of ~2.2× from 25 °C to 150 °C. Thermal resistance is specified as RthJC = 0.36 °C/W (typ), supporting high-power density layouts with direct case-to-heatsink mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports 48 V and 60 V bus systems with 20 %+ voltage margin for transients and ripple |
| RDS(on) max @ 10 V | 4.1 mΩ - enables <1 W conduction loss at 150 A, critical for high-current synchronous rectifiers |
| ID continuous @ TC = 25 °C | 174 A - allows single-device implementation in 1–2 kW power stages without paralleling |
| Qg typ | 93 nC - balances switching speed and gate drive loss for 100–500 kHz operation |
| RthJC | 0.36 °C/W (typ) - permits >300 W dissipation with modest heatsinking, reducing thermal interface complexity |
| EAS | 80 mJ - withstands single-pulse inductive energy in motor drive and DC-DC converter fault conditions |
| VSD @ 10 A | 0.75 V (typ) - lowers forward conduction loss in OR-ing and reverse polarity protection circuits |
Pinout & Package
SIJH5700E-T1-GE3 is housed in a leadless PowerPAK® 8 × 8L package (7.9 mm × 7.9 mm footprint, 1.6 mm height), featuring exposed copper drain pad on bottom side for optimal thermal transfer and four source terminals plus one gate terminal on top side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires 10 V drive for full enhancement; Rg = 1.8 Ω (max) limits ringing risk |
| 2, 3, 4 (S) | Source | Three parallel source connections reduce loop inductance and improve current sharing in high-di/dt applications |
| K (D) | Drain | Exposed copper drain pad on bottom; primary thermal path to PCB/heatsink; not electrically isolated |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers industry-leading RDS(on) × Qg FOM for reduced conduction + switching loss trade-off |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage and ruggedness against unclamped inductive switching stress |
| PowerPAK 8 × 8L footprint | 50 % smaller than D2PAK - saves board space while improving thermal performance via copper-exposed drain |
| 175 °C maximum junction temperature | Enables operation in sealed enclosures or high-ambient environments without derating penalties |
| Lead (Pb)-free and halogen-free | Meets RoHS 2011/65/EU and JEDEC JS709C requirements for green manufacturing compliance |
Applications
| Synchronous Rectification | OR-ing Circuit |
|---|---|
|
Use Scenario: High-efficiency secondary-side rectification in isolated 48 V–60 V DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by controller with precise timing to minimize shoot-through risk. Use Value: Reduces conduction loss by >60 % vs. 150 V Schottky, enabling >96 % efficiency at full load with lower thermal footprint. |
Use Scenario: Redundant 48 V power supply combining with automatic failover in data center rack PDUs. IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction; body diode provides inherent reverse-blocking during fault isolation. Use Value: Eliminates 0.4–0.7 V diode drop, cutting power loss by >30 W per rail and enabling hot-swap capability. |
| Motor Drive Control | Battery Management System |
|
Use Scenario: Half-bridge high-side or low-side switching in 48 V BLDC motor inverters for e-bikes and industrial actuators. IC Role / Device Role / Timing Role: Power switch in H-bridge leg; handles 150 A peak currents with fast turn-off (tf = 45 ns) to limit switching loss. Use Value: Supports 20–100 kHz PWM without excessive heating; avalanche rating ensures reliability during inductive flyback events. |
Use Scenario: High-current discharge/charge path switching in 48 V Li-ion battery packs for energy storage and UPS systems. IC Role / Device Role / Timing Role: Main power FET in bidirectional battery protection circuit; body diode enables passive charging path when gate is off. Use Value: 303 A continuous source-drain diode current supports >100 A charging without external diode; low RDS(on) minimizes pack voltage sag. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH5700TRPBF | RDS(on) = 4.0 mΩ @ 10 V, Qg = 91 nC, same PowerSO-8 package but non-leadless; RthJA = 40 °C/W (vs. 36 °C/W for SIJH5700E) | Limited to lower-power applications due to higher junction-to-ambient thermal resistance | Prefer SIJH5700E-T1-GE3 where PCB space and thermal performance are constrained |
| IXTH174N15T2 | TO-247 package, RDS(on) = 4.2 mΩ @ 10 V, Qg = 120 nC, ID = 174 A, but RthJC = 0.40 °C/W and larger footprint | Requires mechanical heatsink; less suitable for compact surface-mount designs | Choose SIJH5700E-T1-GE3 for SMT-only assembly and improved power density |
Compared with IRFH5700TRPBF and IXTH174N15T2, SIJH5700E-T1-GE3 delivers superior thermal performance in a smaller footprint and lower gate charge, making it optimal for high-current, space-constrained synchronous rectification and OR-ing where board-level thermal management is prioritized over discrete heatsink attachment.
Availability
SIJH5700E-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, OR-ing, and motor drive control requiring stable component supply, long-term production continuity, and automotive-grade reliability screening.
Supply support for SIJH5700E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SIJH5700E-T1-GE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-current, high-voltage industrial and computing power conversion where low RDS(on) × Qg and thermal robustness are critical.
FAQ
What is the maximum continuous drain current rating for SIJH5700E-T1-GE3 at 70 °C case temperature?
The SIJH5700E-T1-GE3 supports 138 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under sustained high-temperature operation and must be validated against actual PCB layout and heatsinking in the target application. The SIJH5700E-T1-GE3 maintains full 174 A capability only at TC = 25 °C.
Does SIJH5700E-T1-GE3 have a guaranteed avalanche rating, and what is its value?
Yes, the SIJH5700E-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 80 mJ and single-pulse avalanche current (IAS) of 40 A with L = 0.1 mH. These values are production-tested per Vishay's UIS qualification standard and ensure reliable operation during inductive switching transients in motor drives and DC-DC converters. The SIJH5700E-T1-GE3 datasheet confirms this rating under Absolute Maximum Ratings.
What is the gate-source threshold voltage range for SIJH5700E-T1-GE3, and how does it vary with temperature?
The SIJH5700E-T1-GE3 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, with a temperature coefficient of −9.5 mV/°C. This negative drift means VGS(th) decreases as junction temperature rises, which helps maintain turn-on margin in high-temperature operation. The SIJH5700E-T1-GE3 remains fully enhanced above 4.5 V gate drive across its full −55 °C to +175 °C operating range.
Can SIJH5700E-T1-GE3 be used in OR-ing applications with reverse polarity protection?
Yes, the SIJH5700E-T1-GE3 is commonly deployed in OR-ing circuits due to its low RDS(on), high ID rating, and integrated body diode with VSD = 0.75 V (typ) at 10 A. When used with proper gate control logic, it blocks reverse current effectively; the body diode also provides fail-safe conduction if gate drive fails. The SIJH5700E-T1-GE3's 150 V VDS rating supports 48 V systems with ample margin for bus transients.
Is SIJH5700E-T1-GE3 compatible with standard reflow soldering profiles, and are there special handling requirements?
Yes, the SIJH5700E-T1-GE3 is qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. However, manual soldering with an iron is not recommended due to its leadless PowerPAK 8 × 8L construction - the exposed copper drain pad requires controlled thermal mass and profile adherence (see Vishay doc #73257). The SIJH5700E-T1-GE3 must be handled per moisture sensitivity level (MSL) 3 guidelines prior to reflow.
SIJH5700E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta), 174A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7500 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIJH5700E-T1-GE3 FAQ
1.How can I place an order for SIJH5700E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJH5700E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJH5700E-T1-GE3 reliable?
The price and inventory of SIJH5700E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJH5700E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJH5700E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJH5700E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJH5700E-T1-GE3?
SIJH5700E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJH5700E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJH5700E-T1-GE3?
For technical support, including SIJH5700E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJH5700E-T1-GE3 requirements.
6.How does Aetrix verify that SIJH5700E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJH5700E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJH5700E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJH5700E-T1-GE3?
All SIJH5700E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJH5700E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJH5700E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJH5700E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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