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Vishay Siliconix SIJH5800E-T1-GE3
- Part No.:
- SIJH5800E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SIJH5800E-T1-GE3.pdf
- Description:
- N-CHANNEL 80 V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,786
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Product details
Overview
SIJH5800E-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Gen V power MOSFET rated for 80 V (D–S), 302 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature, with RDS(on) of 1.35 mΩ at VGS = 10 V - optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIJH5800E-T1-GE3 datasheet, SIJH5800E-T1-GE3 pinout, SIJH5800E-T1-GE3 application, or SIJH5800E-T1-GE3 equivalent, this device demands attention for its ultra-low RDS(on) × Qg figure of merit (103 nC total gate charge), PowerPAK® 8 × 8L leadless package, and validated UIS robustness in high-current switching systems.
Technical Context
This MOSFET employs trench-gate silicon technology with optimized cell pitch and deep-trench doping to achieve sub-1.4 mΩ on-resistance while maintaining fast switching dynamics. Its gate threshold voltage (2–4 V) and low gate resistance (0.34–3.4 Ω) support stable drive under high di/dt conditions.
The device integrates a robust body diode with trr = 106–210 ns and Qrr = 190–380 nC, enabling reliable reverse recovery in OR-ing and motor control topologies. Thermal design leverages a low RthJC of 0.36 °C/W (typical) for efficient heat transfer to external heatsinks via the exposed drain paddle.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 80 V - supports 48 V input bus systems with 20 % derating margin for transients. |
| RDS(on) (max) @ 10 V | 1.35 mΩ - enables <1.2 W conduction loss at 30 A, critical for high-current power stages. |
| Qg (typ) | 103 nC - balances switching speed and gate drive power; enables ~500 kHz operation with moderate driver strength. |
| ID (cont) @ TC = 25 °C | 302 A - delivers high current density in compact footprint, reducing parallel device count. |
| RthJC (typ) | 0.36 °C/W - allows >250 W power dissipation with ≤90 °C case-to-ambient delta, simplifying thermal interface design. |
| VGS(th) | 2–4 V - ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers. |
| Body diode VSD | 0.72–1.1 V @ IS = 10 A - reduces forward conduction loss in bidirectional current paths during dead-time. |
Pinout & Package
SIJH5800E-T1-GE3 uses the PowerPAK® 8 × 8L leadless surface-mount package (7.9 mm × 7.9 mm × 1.6 mm), featuring an exposed copper drain paddle on the bottom side for enhanced thermal and electrical performance. The top-side terminals are arranged in a single-row configuration with Gate, Source, Source, Source, Drain layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires <3.4 Ω series gate resistance to damp ringing in hard-switching applications. |
| 2 (S) | Source | Power return path; tied to PCB ground plane; serves as reference for gate drive and current sensing. |
| 3 (S) | Source | Parallel source connection to reduce bond-wire inductance and improve current sharing uniformity. |
| 4 (S) | Source | Third source terminal; lowers effective source inductance for improved dV/dt immunity and EMI performance. |
| D (bottom paddle) | Drain | High-current output node; soldered directly to large copper area for thermal conduction and low-inductance power routing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V architecture | Enables 1.35 mΩ RDS(on) at 80 V rating - 30 % lower on-resistance than prior-generation equivalents in same package. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and avalanche ruggedness up to 281 mJ - eliminates need for external snubbers in inductive load switching. |
| 50 % smaller footprint vs. D2PAK | Reduces board area by 32 mm² - enables higher power density in space-constrained server VRMs and telecom PSUs. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C - compliant for automotive and industrial end-equipment without exemption requests. |
| Up to 302 A ID (cont) | Supports single-device implementation in 100–200 A output stages - avoids current-sharing complexity and mismatch losses. |
Applications
| Synchronous Rectification | OR-ing Circuit |
|---|---|
Use Scenario: High-efficiency secondary-side rectification in isolated 48 V–12 V DC/DC converters for AI accelerators and telecom equipment. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by controller with precise timing to minimize shoot-through risk. Use Value: Reduces conduction loss by >60 % versus 40 V Schottky, improving full-load efficiency from 92.5 % to 95.1 % at 100 A output. |
Use Scenario: Redundant 12 V power supply combining with hot-swap capability in enterprise storage backplanes. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode; controlled by dedicated OR-ing controller. Use Value: Enables <10 mΩ forward path resistance and <100 ns turn-off - cuts voltage drop from 350 mV to 12 mV at 50 A, eliminating thermal runaway risk. |
| Motor Drive Control | Battery Management System |
Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor inverters for industrial automation actuators. IC Role / Device Role / Timing Role: High-current switching element in three-phase inverter leg; operated with bootstrap gate drive and active Miller clamp. Use Value: Withstands repetitive UIS events up to 75 A avalanche current - sustains operation during short-circuit fault conditions without failure. |
Use Scenario: Main discharge FET in 48 V Li-ion battery packs for e-mobility auxiliary systems and UPS modules. IC Role / Device Role / Timing Role: Primary overcurrent protection switch; controlled by battery monitor IC with fast response to fault signals. Use Value: Delivers 303 A continuous source-drain diode current - supports regenerative braking energy recirculation without external freewheeling diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH5020TRPBF | RDS(on) = 1.75 mΩ @ 10 V; Qg = 91 nC; TO-252 (DPAK) package; RthJC = 1.2 °C/W. | Lower current rating (180 A) and higher thermal resistance limit use to <100 A continuous designs. | Prefer when cost sensitivity outweighs power density needs and layout allows larger footprint. |
| IXFN300N075T2 | RDS(on) = 0.75 mΩ @ 10 V; Qg = 220 nC; TO-264 package; 75 V rating; TJ max = 175 °C. | Higher gate charge increases driver loss; 75 V rating restricts use in 48 V systems with >15 % transient margin. | Choose only when sub-1 mΩ on-resistance is mandatory and board space permits TO-264 mounting. |
Compared with IRFH5020TRPBF and IXFN300N075T2, SIJH5800E-T1-GE3 delivers optimal balance of ultra-low RDS(on), moderate Qg, and compact PowerPAK® 8 × 8L packaging - making it the preferred choice for high-current, high-density 48 V power conversion where thermal management and layout area are constrained.
Availability
SIJH5800E-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, OR-ing circuits, and motor drive control requiring stable component supply across high-volume production cycles and long-lifecycle industrial programs.
Supply support for SIJH5800E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The SIJH5800E-T1-GE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-current, high-frequency power conversion in data center, telecom, and industrial motor control applications.
FAQ
What is the maximum continuous drain current rating for SIJH5800E-T1-GE3 at TC = 25 °C?
The SIJH5800E-T1-GE3 is rated for 302 A maximum continuous drain current at case temperature (TC) of 25 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal management per Vishay's recommended layout guidelines for the PowerPAK® 8 × 8L package.
Does SIJH5800E-T1-GE3 require a heatsink in typical operation?
SIJH5800E-T1-GE3 does not require an external heatsink when operating below ~150 A continuous current with ≥200 cm² of 2 oz copper on the drain pad layer and adequate airflow. Its RthJC of 0.36 °C/W enables direct thermal coupling to the PCB; however, forced convection or internal copper planes are recommended above 200 A to maintain TJ ≤ 150 °C.
Is SIJH5800E-T1-GE3 suitable for synchronous rectification in 48 V to 12 V DC/DC converters?
Yes, SIJH5800E-T1-GE3 is explicitly designed for synchronous rectification in high-current DC/DC converters. Its 80 V VDS rating, 1.35 mΩ RDS(on), and fast body diode (trr = 106 ns) make it ideal for 48 V input stages delivering up to 200 A at 12 V, where low conduction loss and reliable reverse recovery are critical.
What is the gate-source threshold voltage range for SIJH5800E-T1-GE3?
The gate-source threshold voltage (VGS(th)) for SIJH5800E-T1-GE3 is specified as 2 V minimum to 4 V maximum at ID = 250 μA and TJ = 25 °C. This range ensures compatibility with both 3.3 V and 5 V gate drivers while maintaining sufficient noise margin against spurious turn-on in noisy power environments.
How is the PowerPAK® 8 × 8L package of SIJH5800E-T1-GE3 mounted and reworked?
The PowerPAK® 8 × 8L package of SIJH5800E-T1-GE3 requires reflow soldering per JEDEC J-STD-020 profile (peak 260 °C); manual soldering with an iron is not recommended due to its leadless construction and exposed copper drain paddle. Rework must use precision hot-air stations with thermal profiling to avoid delamination or solder joint voiding.
SIJH5800E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta), 302A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.35mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7730 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIJH5800E-T1-GE3 FAQ
1.How can I place an order for SIJH5800E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJH5800E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJH5800E-T1-GE3 reliable?
The price and inventory of SIJH5800E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJH5800E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJH5800E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJH5800E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJH5800E-T1-GE3?
SIJH5800E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJH5800E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJH5800E-T1-GE3?
For technical support, including SIJH5800E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJH5800E-T1-GE3 requirements.
6.How does Aetrix verify that SIJH5800E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJH5800E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJH5800E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJH5800E-T1-GE3?
All SIJH5800E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJH5800E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJH5800E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJH5800E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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