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Vishay Siliconix SIJH800E-T1-GE3
- Part No.:
- SIJH800E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SIJH800E-T1-GE3.pdf
- Description:
- N-CHANNEL 80-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,154
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Product details
Overview
SIJH800E-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 8 × 8L package, rated for 288 A continuous drain current at TC = 25 °C, with RDS(on) of 0.00155 Ω at VGS = 10 V and 140 nC total gate charge - optimized for high-efficiency synchronous rectification in server VRMs and telecom DC/DC converters.
For engineers reviewing the SIJH800E-T1-GE3 datasheet, SIJH800E-T1-GE3 pinout, SIJH800E-T1-GE3 application, or SIJH800E-T1-GE3 equivalent, key selection criteria include its 175 °C junction temperature rating, ultra-low Qgd/Qgs ratio for reduced switching loss, 50 % smaller footprint than D2PAK, and 100 % UIS-tested ruggedness for high-reliability power stages.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve sub-1.6 mΩ on-resistance at 10 V gate drive while maintaining low gate charge (140 nC typ.) and optimized capacitance profile (Ciss = 10230 pF, Crss = 34 pF). Its thermal design centers on a low RthJC of 0.36 °C/W, enabling high-power density operation when mounted on thermally enhanced PCBs.
The device features a single N-channel configuration with integrated body diode (VSD = 0.7–1.1 V at IS = 10 A), reverse recovery time trr = 77 ns (typ.), and avalanche-rated construction (EAS = 245 mJ). It is fully lead-free and halogen-free, qualified per JEDEC JESD47 and JESD22-A114 standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 80 V - supports 48 V input bus designs with 20 % margin for transient overvoltage |
| RDS(on) (max) @ 10 V | 0.00155 Ω - enables <1.5 W conduction loss at 100 A, critical for high-current VRM phases |
| Qg (typ.) | 140 nC - balances switching speed and gate driver power requirement in 300–1000 kHz applications |
| ID (cont.) @ TC = 25 °C | 288 A - allows single-device implementation in 100–200 A per-phase buck converter stages |
| TJ (operating range) | −55 to +175 °C - supports operation in sealed industrial enclosures and automotive under-hood environments |
| RthJC (max) | 0.45 °C/W - permits >300 W power dissipation with minimal heatsink interface resistance |
| Body diode trr (typ.) | 77 ns - reduces shoot-through risk and commutation loss in synchronous rectifier topologies |
Pinout & Package
SIJH800E-T1-GE3 uses the PowerPAK® 8 × 8L leadless surface-mount package (7.9 mm × 7.9 mm × 1.6 mm), featuring exposed copper drain pad on bottom side for optimal thermal transfer. The package has four source terminals (S1–S4), one gate (G), and one drain (D) connected via the bottom thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1–S4 | Source (common) | Four parallel source connections reduce bond wire inductance and improve current sharing in high-di/dt switching |
| G | Gate | Single gate terminal with Rg = 0.2–2.2 Ω - supports direct drive from standard gate drivers without external series resistor |
| D | Drain | Exposed copper thermal pad - primary heat path to PCB; requires full-solder coverage for rated RthJC performance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 25 % lower RDS(on) × Qg figure-of-merit vs. prior generation - directly reduces combined conduction and switching losses |
| Optimized Qgd/Qgs ratio | Reduces Miller-induced voltage spikes during hard switching - improves noise immunity and EMI performance in dense layouts |
| 100 % UIS tested | Guarantees robustness against unclamped inductive switching events common in motor drives and DC/DC startup/fault conditions |
| 50 % smaller footprint than D2PAK | Enables 2× higher power density in space-constrained server and telecom power supplies without sacrificing thermal performance |
| Lead (Pb)-free and halogen-free | Meets RoHS 2011/65/EU and JEDEC JS709C requirements - supports global environmental compliance without derating |
Applications
| Synchronous Rectification | OR-ing Circuit |
|---|---|
|
Use Scenario: High-current output stage of 48 V–12 V isolated DC/DC converter in AI accelerator rack power system. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to minimize forward voltage drop and conduction loss. Use Value: Achieves >98.5 % efficiency at 150 A load by reducing conduction loss from ~2.5 W (diode) to ~0.8 W (MOSFET). |
Use Scenario: Redundant 12 V power rail combining two hot-swap controllers in network switch line card. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode for reverse current blocking and low-loss forward conduction. Use Value: Eliminates 0.4 V diode drop, reducing power loss by 4.8 W per rail at 12 A and enabling passive cooling. |
| Motor Drive Control | Battery Management |
|
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor controller for industrial robotic arm joint actuator. IC Role / Device Role / Timing Role: High-current, high-dV/dt capable N-channel MOSFET driven via bootstrap gate driver in 20 kHz PWM phase leg. Use Value: Withstands 175 °C junction temperature and 70 A pulsed current, enabling compact motor drive without forced air cooling. |
Use Scenario: Primary discharge FET in 48 V LiFePO₄ battery pack protection circuit for energy storage system. IC Role / Device Role / Timing Role: Main current path switch with integrated body diode used for precharge and fault isolation functions. Use Value: 303 A continuous source-drain diode current rating supports safe precharge sequencing without external diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH8325TRPBF | RDS(on) = 0.0014 Ω @ 10 V, Qg = 120 nC, same PowerPAK 8 × 8L package but rated for 75 V VDS | Limited to ≤75 V bus systems; lower Qg reduces gate drive loss but offers no advantage above 75 V transients | Preferable where 75 V rating suffices and lower gate charge is prioritized over 80 V margin |
| IXTH80N20X2 | TO-247 package, 200 V VDS, RDS(on) = 0.0022 Ω @ 10 V, Qg = 165 nC - larger footprint, higher RthJA | Designed for higher-voltage industrial motor drives; not suitable for space-constrained 48 V telecom modules | Only viable if board layout accommodates TO-247 and system requires >80 V breakdown margin |
Compared with IRFH8325TRPBF and IXTH80N20X2, SIJH800E-T1-GE3 uniquely combines 80 V rating, sub-1.6 mΩ RDS(on), and PowerPAK 8 × 8L footprint - making it the only option that meets both high-current density and 80 V transient tolerance requirements in next-gen server VRMs.
Availability
SIJH800E-T1-GE3 is available at Aetrix Electronics and suitable for high-current synchronous rectification, OR-ing circuits, and battery management systems requiring stable component supply across multi-year production cycles.
Supply support for SIJH800E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIJH800E-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SIJH800E-T1-GE3 at case temperature of 70 °C?
The SIJH800E-T1-GE3 is rated for 241 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and must be validated against actual PCB copper area and airflow. SIJH800E-T1-GE3 maintains RDS(on) stability up to 175 °C junction temperature, supporting operation in thermally constrained environments.
Does SIJH800E-T1-GE3 have an integrated body diode, and what are its key parameters?
Yes, SIJH800E-T1-GE3 includes an integrated source-drain body diode with VF = 0.7–1.1 V at IS = 10 A and reverse recovery time trr = 77 ns (typ.) at TJ = 25 °C. Its Qrr = 154 nC (typ.) and ta/tb = 43/35 ns enable efficient commutation in synchronous rectifier and OR-ing applications. SIJH800E-T1-GE3 body diode is rated for 303 A continuous and 350 A pulsed current.
What is the gate threshold voltage range for SIJH800E-T1-GE3, and how does it vary with temperature?
The gate-source threshold voltage VGS(th) for SIJH800E-T1-GE3 is specified as 2–4 V at TJ = 25 °C, with a temperature coefficient of −11 mV/°C. This negative coefficient ensures turn-off safety at elevated temperatures. SIJH800E-T1-GE3 remains fully enhanced down to −55 °C and retains functional gate control up to +175 °C junction temperature.
Is SIJH800E-T1-GE3 suitable for avalanche energy handling, and what is its rated single-pulse EAS?
Yes, SIJH800E-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for 245 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This capability ensures robustness during inductive load switching faults, startup surges, or short-circuit events in motor drives and power supplies. SIJH800E-T1-GE3 avalanche performance is guaranteed across its full operating temperature range.
What are the soldering recommendations for SIJH800E-T1-GE3's PowerPAK 8 × 8L package?
SIJH800E-T1-GE3 requires peak reflow temperature of 260 °C per JEDEC J-STD-020, with strict adherence to the recommended solder profile (Vishay doc #73257). Manual soldering with iron is not recommended due to its leadless construction and exposed copper drain pad. SIJH800E-T1-GE3 must be mounted on FR4 with ≥1" × 1" copper area for thermal performance; solder fillet at the exposed copper tip is not required for reliable interconnection.
SIJH800E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Ta), 299A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.55mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 210 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10230 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIJH800E-T1-GE3 FAQ
1.How can I place an order for SIJH800E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIJH800E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIJH800E-T1-GE3 reliable?
The price and inventory of SIJH800E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJH800E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIJH800E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJH800E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIJH800E-T1-GE3?
SIJH800E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIJH800E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIJH800E-T1-GE3?
For technical support, including SIJH800E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJH800E-T1-GE3 requirements.
6.How does Aetrix verify that SIJH800E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIJH800E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJH800E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIJH800E-T1-GE3?
All SIJH800E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJH800E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIJH800E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIJH800E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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