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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJK5100E-T1-GE3

Name: SIJK5100E-T1-GE3
Brand: Vishay Siliconix
SKU: SIJK5100E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJK5100E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIJK5100E-T1-GE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET

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Product details

Overview

SIJK5100E-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 417 A (T_C = 25 °C) TrenchFET® Gen V power MOSFET in a PowerPAK® 10 × 12 package, featuring R_DS(on) = 1.4 mΩ at V_GS = 10 V and Q_g = 131 nC - optimized for high-current synchronous rectification and OR-ing in industrial power supplies.

For engineers reviewing the SIJK5100E-T1-GE3 datasheet, SIJK5100E-T1-GE3 pinout, SIJK5100E-T1-GE3 application, or SIJK5100E-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on), 100 % R_g and UIS tested reliability, thermal resistance R_thJC = 0.21 °C/W, and compatibility with high-efficiency 48 V and 54 V bus architectures requiring >400 A continuous conduction capability.

Technical Context

This MOSFET employs trench-gate silicon technology with Gen V process optimization to achieve sub-1.5 mΩ on-resistance at 100 V rating while maintaining robust avalanche energy handling (E_AS = 214 mJ). Its gate charge profile supports fast switching with t_d(on) = 32 ns and t_d(off) = 54 ns under standard 10 V drive conditions.

The device uses a single-die, bottom-side cooled PowerPAK® 10 × 12 leadless package with exposed drain copper on the underside - enabling direct thermal interface to heatsinks or PCB copper planes, and delivering R_thJC as low as 0.21 °C/W for high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V/54 V bus systems with ≥2× voltage margin against transients
R_DS(on) max @ 10 V	1.4 mΩ - enables <1 W conduction loss at 400 A, critical for high-efficiency synchronous rectifiers
I_D continuous @ T_C = 25 °C	417 A - delivers industry-leading current density in 10 × 12 mm footprint
Q_g typ.	131 nC - balances switching speed and gate driver power requirements in hard-switched topologies
R_thJC max	0.28 °C/W - allows direct thermal coupling to heatsink, supporting >500 W dissipation with modest ΔT
E_AS	214 mJ - provides robustness against inductive load turn-off stress in motor drives and hot-swap circuits
V_GS(th)	2–4 V - ensures reliable enhancement-mode operation with standard 3.3 V/5 V logic-level gate drivers

Pinout & Package

PowerPAK® 10 × 12 is a leadless, bottom-terminal package with exposed drain pad on underside and top-side source/gate terminals. Thermal performance relies on soldering the drain pad to large PCB copper area or heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, S	Source	Eight parallel source connections reduce source inductance and improve current sharing in high-di/dt applications
8	Gate	Single gate input with R_g = 0.2–1.6 Ω - compatible with standard gate drivers without external series resistance
Drain (bottom-side exposed copper)	Drain	Full-bottom drain pad serves as primary thermal path and high-current return; requires solder mask defined land pattern per Doc #61538

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers 1.4 mΩ R_DS(on) at 100 V - best-in-class conduction efficiency for high-current DC/DC stages
100 % R_g and UIS tested	Ensures gate robustness and single-pulse avalanche immunity across 100 % production lot - no screening failures in field
PowerPAK® 10 × 12 package	Enables 0.21 °C/W junction-to-case thermal resistance - reduces heatsink size by >40 % vs. TO-263 equivalents
Standard level gate threshold	V_GS(th) = 2–4 V - directly drivable by microcontrollers, PWM controllers, and digital isolators without level-shifting
Enhanced power dissipation	PD = 536 W @ T_C = 25 °C - supports compact, fanless 1 kW+ power modules in telecom and server PSUs

Applications

Synchronous Rectification	OR-ing / Hot-Swap Control
Use Scenario: Secondary-side switching in isolated 48 V–54 V output DC/DC converters for AI accelerators and telecom rectifiers. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency beyond 98 %. Use Value: 1.4 mΩ R_DS(on) cuts conduction loss by >65 % vs. 3.5 mΩ alternatives, enabling >100 A per phase in compact 2-oz copper layouts.	Use Scenario: Redundant 48 V power rail combining in enterprise servers and storage enclosures with automatic fault isolation. IC Role / Device Role / Timing Role: Low-loss, bidirectionally blocking OR-ing FET controlling power path between parallel PSUs and backplane. Use Value: Ultra-low R_DS(on) limits voltage drop to <60 mV at 400 A, reducing thermal derating and enabling smaller busbar design.
Motor Drive Inverter Stage	Battery Management System (BMS)
Use Scenario: High-current half-bridge leg in 48 V BLDC motor drives for automated guided vehicles (AGVs) and e-mobility subsystems. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter with fast body diode recovery (t_rr = 140 ns) for reduced shoot-through risk. Use Value: 214 mJ E_AS withstands motor inductive kickback during emergency stop, eliminating need for external snubbers.	Use Scenario: Main contactor replacement and cell balancing switch in high-voltage Li-ion battery packs for energy storage systems (ESS). IC Role / Device Role / Timing Role: High-current main disconnect FET with integrated body diode for passive balancing and reverse polarity protection. Use Value: 487 A continuous source-drain diode current supports >300 A bidirectional pack current, enabling scalable modular BMS architecture.

Synchronous Rectification

OR-ing / Hot-Swap Control

Use Scenario: Secondary-side switching in isolated 48 V–54 V output DC/DC converters for AI accelerators and telecom rectifiers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency beyond 98 %.

Use Value: 1.4 mΩ R_DS(on) cuts conduction loss by >65 % vs. 3.5 mΩ alternatives, enabling >100 A per phase in compact 2-oz copper layouts.

Use Scenario: Redundant 48 V power rail combining in enterprise servers and storage enclosures with automatic fault isolation.

IC Role / Device Role / Timing Role: Low-loss, bidirectionally blocking OR-ing FET controlling power path between parallel PSUs and backplane.

Use Value: Ultra-low R_DS(on) limits voltage drop to <60 mV at 400 A, reducing thermal derating and enabling smaller busbar design.

Motor Drive Inverter Stage

Battery Management System (BMS)

Use Scenario: High-current half-bridge leg in 48 V BLDC motor drives for automated guided vehicles (AGVs) and e-mobility subsystems.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter with fast body diode recovery (t_rr = 140 ns) for reduced shoot-through risk.

Use Value: 214 mJ E_AS withstands motor inductive kickback during emergency stop, eliminating need for external snubbers.

Use Scenario: Main contactor replacement and cell balancing switch in high-voltage Li-ion battery packs for energy storage systems (ESS).

IC Role / Device Role / Timing Role: High-current main disconnect FET with integrated body diode for passive balancing and reverse polarity protection.

Use Value: 487 A continuous source-drain diode current supports >300 A bidirectional pack current, enabling scalable modular BMS architecture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH420N10L2	R_DS(on) = 1.2 mΩ @ 10 V, but TO-247 package yields R_thJC = 0.35 °C/W - higher thermal impedance	Requires larger heatsink and mechanical mounting; unsuitable for ultra-thin board designs	Choose when legacy TO-247 layout exists and thermal margin >15 °C is available
IRFH5207TRPBF	R_DS(on) = 1.7 mΩ @ 10 V, PowerSO-10 package, R_thJC = 0.32 °C/W - lower current rating (240 A)	Limited to ≤200 A continuous use; not rated for 48 V OR-ing above 300 A	Choose only for space-constrained mid-power designs where peak current <220 A

Compared with IXTH420N10L2 and IRFH5207TRPBF, SIJK5100E-T1-GE3 delivers the lowest thermal resistance and highest current density in its class - making it optimal for next-gen 48 V power architectures where board area, thermal budget, and efficiency are co-constrained.

Availability

SIJK5100E-T1-GE3 is available at Aetrix Electronics and suitable for high-current power supply, motor control, and battery management applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for SIJK5100E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIJK5100E-T1-GE3 belongs to Vishay's TrenchFET® Gen V family - engineered specifically for high-current, high-efficiency DC/DC conversion and power distribution in datacenter, telecom, and industrial automation systems.

FAQ

What is the maximum continuous drain current rating for SIJK5100E-T1-GE3 at case temperature of 100 °C?

The SIJK5100E-T1-GE3 supports 295 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal constraints and assumes proper PCB copper thermal mass and airflow per Vishay's recommended land pattern (Doc #61538). The SIJK5100E-T1-GE3 maintains safe operation up to T_J = 175 °C under these conditions.

Does SIJK5100E-T1-GE3 require a gate resistor for typical PWM switching applications?

The SIJK5100E-T1-GE3 has a measured gate resistance R_g of 0.2–1.6 Ω, which helps dampen ringing and supports stable switching without mandatory external gate resistors in most 100 kHz–500 kHz hard-switched applications. However, a small series resistor (1–5 Ω) is recommended to fine-tune dV/dt and EMI in high-di/dt layouts. The SIJK5100E-T1-GE3 gate drive requirements remain compatible with standard 2 A peak gate drivers.

Can SIJK5100E-T1-GE3 be used in bidirectional current flow applications such as battery OR-ing?

Yes - the SIJK5100E-T1-GE3 supports bidirectional current via its intrinsic body diode, rated for 487 A continuous source-drain current at T_C = 25 °C and 700 A pulsed. Its t_rr = 140 ns and Q_rr = 360 nC enable efficient reverse conduction in OR-ing and hot-swap circuits. For full bidirectional FET operation, external gate control must ensure proper V_GS polarity during reverse conduction - the SIJK5100E-T1-GE3 itself does not integrate reverse gate drive logic.

What is the thermal resistance from junction to ambient (R_thJA) for SIJK5100E-T1-GE3 on a standard FR4 board?

Per the datasheet, the SIJK5100E-T1-GE3 exhibits R_thJA = 6.3 °C/W (typical) and 9.0 °C/W (maximum) when mounted on a 1" × 1" FR4 board with 2 oz copper, as defined in Note b. This value assumes no external heatsink - actual R_thJA improves significantly with thermal vias and copper pour. The SIJK5100E-T1-GE3 is intended for bottom-side cooling, so R_thJA is secondary to R_thJC = 0.21 °C/W in system-level thermal design.

Is SIJK5100E-T1-GE3 suitable for automotive-grade applications?

The SIJK5100E-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. It meets industrial temperature range (−55 °C to +175 °C) and is widely deployed in telecom, server, and industrial motor control - but lacks automotive-specific qualification testing, PPAP documentation, or guaranteed lot traceability per IATF 16949. For automotive use, consider Vishay's AEC-Q101-qualified alternatives like SQJQ410EL.

SIJK5100E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 74A (Ta), 417A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11480 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 17W (Ta), 536W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIJK5100E-T1-GE3 FAQ

1.How can I place an order for SIJK5100E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJK5100E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJK5100E-T1-GE3 reliable?

The price and inventory of SIJK5100E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJK5100E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJK5100E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJK5100E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJK5100E-T1-GE3?

SIJK5100E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJK5100E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJK5100E-T1-GE3?

For technical support, including SIJK5100E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJK5100E-T1-GE3 requirements.

6.How does Aetrix verify that SIJK5100E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJK5100E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJK5100E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJK5100E-T1-GE3?

All SIJK5100E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJK5100E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJK5100E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJK5100E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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