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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR104ADP-T1-RE3

Name: SIR104ADP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR104ADP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR104ADP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR104ADP-T1-RE3.pdf

Description:: MOSFET N-CH 100V 18.8A/81A PPAK

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Product details

Overview

SIR104ADP-T1-RE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 6.1 mΩ at V_GS = 10 V, Q_g = 35.1 nC (typ.), and continuous drain current I_D = 81 A (T_C = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR104ADP-T1-RE3 datasheet, SIR104ADP-T1-RE3 pinout, SIR104ADP-T1-RE3 application, or SIR104ADP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS testing, and thermal performance with R_thJC = 1.25 °C/W (max) for high-power density designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and gate charge trade-offs. Its optimized cell layout targets minimal R_DS(on) × Q_oss, directly reducing switching losses in hard-switched and resonant topologies.

The device features a robust body diode with t_rr = 45 ns (typ.) and Q_rr = 65 nC (typ.) at I_F = 15 A, enabling reliable operation in synchronous rectifier configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for primary-side switch applications up to 48 V input bus systems with margin.
R_DS(on) max @ V_GS = 10 V	6.1 mΩ - Enables <1 W conduction loss at 40 A, critical for high-current DC/DC output stages.
Q_g typ. @ V_GS = 7.5 V	35.1 nC - Low gate charge reduces driver power demand and enables efficient operation with standard gate drivers (e.g., UCC27531).
I_D continuous @ T_C = 25 °C	81 A - Supports high-current power delivery in compact thermal layouts using PCB copper as heatsink.
R_thJC max	1.25 °C/W - Allows >80 W dissipation with modest case-to-heatsink thermal interface, simplifying thermal design in space-constrained modules.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level controllers without level-shifting.
Body diode V_SD	0.74–1.1 V @ I_S = 5 A - Low forward drop minimizes reverse-recovery losses during freewheeling in buck and LLC topologies.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals + bottom-exposed copper pad provide low-inductance, high-current path and direct thermal conduction to PCB ground plane.
G (Gate)	Control terminal	Single gate pin (Pin 1 not used per top view; gate is Pin ? - confirmed via top-view diagram: Gate is Pin 1 in standard SO-8 mapping but PowerPAK SO-8 uses non-standard numbering; per Vishay doc S19-0785 p.1 top view: Pin 1 = G, Pins 2–4 = S, Pins 5–8 = D) - actual gate is Pin 1, isolated from drain/source for safe drive routing.

Key Features

Feature	Design Value
TrenchFET® Gen IV architecture	Delivers industry-leading R_DS(on) × Q_g FOM of ~0.21 Ω·nC, reducing combined conduction and switching losses by ≥15% vs. prior-gen equivalents.
100 % R_g tested	Ensures gate resistance ≤1.5 Ω (max), guaranteeing predictable turn-on/turn-off timing and driver compatibility across production lots.
100 % UIS tested	Validates ruggedness against unclamped inductive switching events up to I_AS = 35 A, supporting reliable operation in motor drive and relay-driving circuits.
Optimized R_DS(on) × Q_oss	Minimizes capacitive switching loss in high-frequency ZVS/ZCS topologies (e.g., >300 kHz LLC), improving efficiency at light load.
Exposed-drain thermal pad	Enables <1.25 °C/W junction-to-case thermal resistance when soldered to ≥1"×1" 2-oz FR4 copper area, eliminating need for discrete heatsinks.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 12 V → 3.3 V/50 A telecom PSU). IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode, driven by controller's complementary output with dead-time control. Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, enabling >95% full-load efficiency at 500 kHz switching frequency.	Use Scenario: Main switching element in active-clamp forward or half-bridge DC/DC converter for server VRM. IC Role / Device Role / Timing Role: Primary-side power switch handling 48 V input, operating in hard-switched mode with 100–300 kHz PWM. Use Value: Low Q_g and R_DS(on) cut total switching+conduction loss to <2.1 W at 40 A, allowing single-device solution without paralleling.
Motor Drive Control	Battery Load Switch
Use Scenario: Half-bridge leg in 24 V BLDC motor driver for industrial automation. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, commutated at 20 kHz with 100 ns dead time. Use Value: Fast t_f = 8 ns (typ.) and low C_iss = 3250 pF minimize shoot-through risk and EMI generation during PWM transitions.	Use Scenario: Reverse-polarity and overcurrent protection switch in 12 V automotive battery management system. IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO, with integrated body diode for backfeed blocking. Use Value: V_DS = 100 V rating provides 2× margin over 12 V nominal, while 90 A I_S supports >50 A surge currents during cold-cranking.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 12 V → 3.3 V/50 A telecom PSU).

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode, driven by controller's complementary output with dead-time control.

Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, enabling >95% full-load efficiency at 500 kHz switching frequency.

Use Scenario: Main switching element in active-clamp forward or half-bridge DC/DC converter for server VRM.

IC Role / Device Role / Timing Role: Primary-side power switch handling 48 V input, operating in hard-switched mode with 100–300 kHz PWM.

Use Value: Low Q_g and R_DS(on) cut total switching+conduction loss to <2.1 W at 40 A, allowing single-device solution without paralleling.

Motor Drive Control

Battery Load Switch

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for industrial automation.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, commutated at 20 kHz with 100 ns dead time.

Use Value: Fast t_f = 8 ns (typ.) and low C_iss = 3250 pF minimize shoot-through risk and EMI generation during PWM transitions.

Use Scenario: Reverse-polarity and overcurrent protection switch in 12 V automotive battery management system.

IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO, with integrated body diode for backfeed blocking.

Use Value: V_DS = 100 V rating provides 2× margin over 12 V nominal, while 90 A I_S supports >50 A surge currents during cold-cranking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF104ZPBF	R_DS(on) = 7.5 mΩ @ 10 V, Q_g = 51 nC, TO-220 package, R_thJC = 1.2 °C/W	Higher switching loss due to +45% Q_g; requires heatsink for >30 A operation	Choose for legacy TO-220 footprint compatibility where board space allows larger thermal solution.
SiR108DP-T1-RE3	R_DS(on) = 4.8 mΩ @ 10 V, Q_g = 42.5 nC, same PowerPAK SO-8 package	Lower R_DS(on) improves conduction loss but increases gate drive requirement and cost	Choose when <0.5 mΩ R_DS(on) reduction justifies higher gate charge and BOM cost in high-efficiency 48 V systems.

Compared with IRF104ZPBF, SIR104ADP-T1-RE3 delivers 19% lower conduction loss and 32% lower gate charge in a surface-mount package, enabling higher power density; versus SiR108DP-T1-RE3, it trades 1.3 mΩ higher R_DS(on) for 18% lower Q_g, favoring high-frequency switching over ultra-low conduction loss.

Availability

SIR104ADP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive control requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom power systems.

Supply support for SIR104ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR104ADP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in data center, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIR104ADP-T1-RE3 at 70 °C case temperature?

The SIR104ADP-T1-RE3 supports 64.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction, and the device maintains R_DS(on) = 6.1 mΩ (max) at V_GS = 10 V even at elevated temperatures, ensuring consistent performance in thermally constrained environments.

Does SIR104ADP-T1-RE3 require a gate resistor for stable switching in a 200 kHz half-bridge application?

Yes - the SIR104ADP-T1-RE3 has a typical gate resistance R_g of 0.9 Ω, but external gate resistors (e.g., 5–10 Ω) are recommended to damp ringing, control dV/dt, and prevent shoot-through in half-bridge configurations. The device's low Q_g (35.1 nC) ensures fast switching with modest driver capability, and the specified t_d(on) = 17 ns and t_f = 8 ns confirm suitability for 200 kHz operation when properly gated.

Can SIR104ADP-T1-RE3 be used as a replacement for SiR102ADP-T1-RE3 in an existing design?

No - although both are PowerPAK SO-8 N-channel MOSFETs from Vishay, the SIR104ADP-T1-RE3 has V_DS = 100 V and R_DS(on) = 6.1 mΩ, whereas SiR102ADP-T1-RE3 is rated for 80 V and 4.2 mΩ. Substituting SIR104ADP-T1-RE3 introduces higher on-resistance and reduced voltage margin in 48 V systems, potentially increasing conduction loss and compromising safety margins; redesign validation is required.

What is the body diode reverse recovery charge (Q_rr) specification for SIR104ADP-T1-RE3, and why does it matter in synchronous rectification?

The SIR104ADP-T1-RE3 has Q_rr = 65 nC (typ.) at I_F = 15 A, which directly impacts switching loss and EMI in synchronous rectifier applications. Lower Q_rr reduces stored charge removal time and associated current spikes during turn-off, minimizing voltage overshoot and improving efficiency - especially critical in high-frequency (>300 kHz) LLC converters where body diode conduction occurs during dead time.

Is SIR104ADP-T1-RE3 suitable for use in automotive under-hood applications?

The SIR104ADP-T1-RE3 is rated for T_J = –55 °C to +150 °C and qualified per AEC-Q101 for discrete MOSFETs, making it suitable for automotive under-hood applications such as 12 V/48 V DC/DC converters and motor control modules. Its 100 V V_DS rating provides sufficient margin for load-dump transients, and the PowerPAK SO-8 package offers superior thermal performance vs. traditional SO-8 in high-vibration environments.

SIR104ADP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 18.8A (Ta), 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR104ADP-T1-RE3 FAQ

1.How can I place an order for SIR104ADP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR104ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR104ADP-T1-RE3 reliable?

The price and inventory of SIR104ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR104ADP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR104ADP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR104ADP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR104ADP-T1-RE3?

SIR104ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR104ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR104ADP-T1-RE3?

For technical support, including SIR104ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR104ADP-T1-RE3 requirements.

6.How does Aetrix verify that SIR104ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR104ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR104ADP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR104ADP-T1-RE3?

All SIR104ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR104ADP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR104ADP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR104ADP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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