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Vishay Siliconix SIR106DP-T1-RE3
- Part No.:
- SIR106DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR106DP-T1-RE3.pdf
- Description:
- MOSFET N-CH 100V 16.1A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,804
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Product details
Overview
SIR106DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V, 65.8 A PowerPAK® SO-8 single MOSFET optimized for high-efficiency power conversion. It delivers 6.6 mΩ RDS(on) at VGS = 10 V and 7.0 mΩ at 7.5 V, with 32 nC total gate charge (Qg) and 39 nC output charge (Qoss, VDS = 50 V), enabling low conduction and switching losses in synchronous rectification and primary-side switch applications.
For engineers reviewing the SIR106DP-T1-RE3 datasheet, SIR106DP-T1-RE3 pinout, SIR106DP-T1-RE3 application, or SIR106DP-T1-RE3 equivalent, this device is selected for high-current DC/DC converters where thermal performance, avalanche ruggedness (EAS = 45 mJ), and 100% UIS testing are critical to system reliability under transient stress.
Technical Context
This TrenchFET® Gen IV MOSFET uses a trench-gate structure tuned for minimal RDS(on) × Qoss figure-of-merit, directly supporting high-frequency operation in hard-switched topologies. Its 1.2 °C/W junction-to-case thermal resistance enables efficient heat transfer through the exposed drain pad of the leadless PowerPAK SO-8 package.
The device features a body diode with 50–100 ns reverse recovery time (trr) and 100–200 nC reverse recovery charge (Qrr), validated for OR-ing and bidirectional current handling. Gate threshold voltage (VGS(th)) is specified from 2.0 V to 3.4 V at 250 μA, ensuring robust turn-on margin across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for primary-side switch or high-side load switch in 48 V bus systems. |
| RDS(on) max @ 10 V | 8.0 mΩ - Enables ≤ 53 W conduction loss at 65.8 A continuous drain current (TC = 25 °C). |
| Qg typ. | 32 nC - Supports efficient gate drive with <30 ns turn-on delay and <14 ns rise time at Rg = 1 Ω. |
| ID continuous | 65.8 A @ TC = 25 °C - Rated for high-current power stages without forced airflow or heatsink. |
| EAS | 45 mJ - Single-pulse avalanche energy rating ensures survivability during inductive switching transients. |
| RthJC max | 1.5 °C/W - Low thermal resistance allows direct mounting to copper pour for effective junction-to-board heat transfer. |
| VGS(th) | 2.0–3.4 V - Threshold range supports reliable enhancement-mode operation with standard 5 V or 10 V gate drivers. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain), footprint-compatible with standard SO-8 but with enhanced thermal and current-handling capability due to larger die and bottom-side thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad on bottom surface provides primary thermal path and low-inductance high-current return. |
| G (Pin 1 top view) | Gate (G) | Single gate terminal located adjacent to source for minimized gate loop inductance and stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Enables ultra-low RDS(on) × Qoss FOM for reduced switching losses in 100–500 kHz DC/DC converters. |
| 100% Rg and UIS tested | Ensures gate resistance consistency and guaranteed avalanche ruggedness per unit, critical for unclamped inductive loads. |
| PowerPAK SO-8 package | Delivers DPAK-level thermal performance (RthJC = 1.2 °C/W) in SO-8 footprint, eliminating need for layout redesign. |
| Body diode Qrr = 100–200 nC | Supports efficient synchronous rectification and OR-ing with predictable reverse recovery behavior. |
| VGS = ±20 V rating | Allows robust gate drive design with margin against overshoot in noisy power supply environments. |
Applications
| Synchronous Rectification | Primary-Side Switch |
|---|---|
Use Scenario: Secondary-side switching in isolated LLC or phase-shifted full-bridge converters operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-side N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and conduction loss. Use Value: Achieves >96% efficiency at 48 V input / 12 V output with 65.8 A output current, enabled by 6.6 mΩ RDS(on) and fast body diode recovery. |
Use Scenario: High-current primary switch in telecom or server AC/DC front-end PFC or half-bridge DC/DC stages. IC Role / Device Role / Timing Role: Main power switch handling 65.8 A continuous drain current with 100 V blocking capability. Use Value: Delivers low conduction loss (<0.43 W at 20 A) and withstands 30 A single-pulse avalanche current, improving system fault tolerance. |
| OR-ing Circuit | Battery Load Switch |
Use Scenario: Redundant 48 V power rail combining in data center servers using ideal diode control. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current path with controlled turn-on. Use Value: Enables <10 mV forward voltage drop at 30 A (vs. 300–400 mV for Schottky), reducing thermal stress and improving power density. |
Use Scenario: Hot-swap and battery protection circuit in portable medical equipment or industrial handheld devices. IC Role / Device Role / Timing Role: High-side load switch controlling 12–48 V battery connection with overcurrent and thermal shutdown support. Use Value: Supports 65.8 A pulsed load current and 150 A IDM, allowing safe inrush limiting and short-circuit response within 100 μs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR108DP-T1-RE3 | 100 V, 52.6 A, RDS(on) = 9.5 mΩ @ 10 V, Qg = 27 nC - lower current rating but slightly faster switching. | Better suited for space-constrained 30–40 A applications where gate drive strength is limited. | Select when prioritizing lower Qg over peak current capability; not a drop-in replacement due to derated ID. |
| IRF7478PBF | 100 V, 59 A, RDS(on) = 9.0 mΩ @ 10 V, Qg = 44 nC - higher gate charge and older TrenchFET Gen III process. | Compatible with legacy SO-8 footprints but lacks PowerPAK's thermal performance (RthJC = 2.5 °C/W). | Choose only if board layout cannot accommodate PowerPAK's extended drain pad; expect ~25 °C higher junction temp at same power. |
Compared with SiR108DP-T1-RE3 and IRF7478PBF, SIR106DP-T1-RE3 offers the highest continuous current (65.8 A) and lowest RDS(on) × Qoss FOM in its class, making it optimal for thermally demanding, high-efficiency power stages where both conduction and switching losses must be minimized.
Availability
SIR106DP-T1-RE3 is available at Aetrix Electronics and suitable for high-reliability DC/DC converters, server power supplies, and motor drive control requiring stable component supply and long-term production continuity.
Supply support for SIR106DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIR106DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered for high-current, high-frequency power conversion in telecom, computing, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for SIR106DP-T1-RE3?
The SIR106DP-T1-RE3 is rated for 65.8 A continuous drain current at case temperature (TC) of 25 °C, derating to 52.6 A at TC = 70 °C. This rating assumes proper PCB copper area and thermal management per Vishay Application Note AN821. The SIR106DP-T1-RE3 achieves this current capability while maintaining 8.0 mΩ RDS(on) at VGS = 10 V, enabling high-power density designs.
Does SIR106DP-T1-RE3 support gate drive at 5 V logic level?
The SIR106DP-T1-RE3 has a gate threshold voltage (VGS(th)) range of 2.0–3.4 V, so it will turn on with 5 V gate drive; however, its RDS(on) is specified at 7.0 mΩ minimum at VGS = 7.5 V and 8.0 mΩ maximum at VGS = 10 V. For optimal conduction loss, 10 V drive is recommended. The SIR106DP-T1-RE3 is not characterized for guaranteed enhancement-mode operation below 4.5 V.
Is SIR106DP-T1-RE3 suitable for avalanche-rated applications?
Yes, the SIR106DP-T1-RE3 is 100% UIS (unclamped inductive switching) tested with a single-pulse avalanche energy rating of 45 mJ and 30 A avalanche current (IAS). This makes the SIR106DP-T1-RE3 appropriate for flyback, resonant, and other topologies where inductive energy must be safely dissipated in the MOSFET during switching transitions.
What is the thermal resistance from junction to ambient for SIR106DP-T1-RE3?
The SIR106DP-T1-RE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 25 °C/W under standard test conditions (surface-mounted on 1" × 1" FR4 board, t ≤ 10 s). With adequate PCB copper area, typical RthJA can be reduced to ~20 °C/W. Its much lower junction-to-case resistance (RthJC = 1.5 °C/W max) means thermal performance is dominated by PCB layout - the SIR106DP-T1-RE3 relies on external copper for heat spreading.
Can SIR106DP-T1-RE3 be used in OR-ing configurations with back-to-back connection?
Yes, the SIR106DP-T1-RE3 is commonly used in back-to-back N-channel configurations for OR-ing applications. Its low RDS(on) (6.6 mΩ typ. at 10 V) and well-characterized body diode (VSD = 0.75–1.1 V at 5 A) enable low forward voltage drop and predictable reverse recovery (trr = 50–100 ns). The SIR106DP-T1-RE3's 100% Rg testing also ensures consistent gate behavior in dual-MOSFET control schemes.
SIR106DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.1A (Ta), 65.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3610 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 83.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR106DP-T1-RE3 FAQ
1.How can I place an order for SIR106DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR106DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR106DP-T1-RE3 reliable?
The price and inventory of SIR106DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR106DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR106DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR106DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR106DP-T1-RE3?
SIR106DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR106DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR106DP-T1-RE3?
For technical support, including SIR106DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR106DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR106DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR106DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR106DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR106DP-T1-RE3?
All SIR106DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR106DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR106DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR106DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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