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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR108DP-T1-RE3

Name: SIR108DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR108DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR108DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR108DP-T1-RE3.pdf

Description:: MOSFET N-CH 100V 12.4A/45A PPAK

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Product details

Overview

SIR108DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V, 45 A PowerPAK® SO-8 single MOSFET with R_DS(on) = 13.5 mΩ at V_GS = 10 V and Q_g = 20.9 nC (at V_GS = 7.5 V), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters and power supplies.

For engineers reviewing the SIR108DP-T1-RE3 datasheet, SIR108DP-T1-RE3 pinout, SIR108DP-T1-RE3 application, or SIR108DP-T1-RE3 equivalent, this device delivers low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance matching DPAK while retaining SO-8 footprint compatibility.

Technical Context

This TrenchFET® Gen IV MOSFET uses advanced silicon process tuning to minimize both R_DS(on)–Q_g and R_DS(on)–Q_oss FOMs-critical for high-frequency, high-efficiency switching. Its gate charge profile (Q_g = 20.9 nC typ. at 7.5 V) and low Crss (12 pF) support fast, low-loss transitions in hard-switched topologies.

The PowerPAK SO-8 package features exposed drain copper on the bottom side, enabling direct thermal conduction to PCB copper. With R_thJC = 1.6 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s), it achieves DPAK-level thermal performance without layout changes to legacy SO-8 footprints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC and offline auxiliary supplies
R_DS(on) max	13.5 mΩ at V_GS = 10 V - enables <1.4 W conduction loss at 45 A continuous drain current
Q_g typ.	20.9 nC at V_GS = 7.5 V - reduces gate drive power and enables efficient operation at ≥500 kHz
I_D (T_J = 150 °C)	45 A - rated for high-current synchronous rectifiers and motor drive half-bridges
C_iss/C_oss/C_rss	2060 / 150 / 12 pF - low reverse transfer capacitance minimizes Miller-induced shoot-through risk
R_thJC	1.6 °C/W (typ.) - allows >40 W steady-state dissipation with minimal heatsink when mounted on 2 oz copper
V_GS(th)	2.0–3.6 V - ensures robust turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

PowerPAK® SO-8 single package: leadless, 5.15 mm × 6.15 mm footprint, 1.04 mm height, exposed drain pad on bottom side for thermal conduction. Compatible with standard SO-8 land patterns; no PCB redesign required.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5	Gate (G)	Single gate input with R_g = 0.3–1.5 Ω - supports low-noise, stable gate driving without external series resistance
6, 7, 8	Drain (D)	Three drain terminals connected to large bottom-side copper pad - provides low-inductance, high-current path and primary thermal interface to PCB

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_oss FOM for reduced switching losses in high-frequency SMPS
100% R_g and UIS tested	Ensures gate robustness and avalanche energy handling (E_AS = 20 mJ) in real-world overvoltage transients
PowerPAK SO-8 package	Enables DPAK-equivalent thermal performance (R_thJC = 1.6 °C/W) in SO-8 footprint - eliminates layout rework
Low Q_gd/Q_g ratio	Q_gd = 3.9 nC / Q_g = 20.9 nC → 18.7% - improves hard-switching immunity and reduces Miller plateau duration
Body diode t_rr	48–96 ns - supports ZVS-assisted synchronous rectification with low reverse recovery loss

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, high-efficiency buck converter delivering 12 V @ 60 A to CPU core logic in datacenter servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500–800 kHz with 5 V gate drive. Use Value: 13.5 mΩ R_DS(on) and 20.9 nC Q_g reduce conduction + switching losses by ~18% vs. prior-gen SO-8 MOSFETs, improving full-load efficiency to >95%.	Use Scenario: 48 V-to-12 V isolated DC/DC module for factory automation PLC I/O power rails. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, switching at 300 kHz. Use Value: Low C_rss (12 pF) and tuned Q_g/Q_gd ratio suppress voltage spikes during turn-off, eliminating need for snubbers and reducing EMI filter size.
Brushless DC Motor Inverter	Telecom Rectifier Module
Use Scenario: 24 V three-phase inverter driving 500 W BLDC fan in telecom base station cooling system. IC Role / Device Role / Timing Role: Low-side switch in 60° commutation, driven by 3.3 V microcontroller PWM outputs. Use Value: V_GS(th) range (2.0–3.6 V) guarantees reliable turn-on with 3.3 V logic, while 45 A I_D rating handles peak motor currents up to 75 A.	Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier supplying -48 V backup power. IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) channel used in self-driven synchronous rectification. Use Value: Body diode t_rr = 48 ns and V_SD = 0.77 V (at 5 A) minimize reverse recovery loss and forward drop, increasing rectifier efficiency by 1.2% at 20 A load.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 12 V @ 60 A to CPU core logic in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500–800 kHz with 5 V gate drive.

Use Value: 13.5 mΩ R_DS(on) and 20.9 nC Q_g reduce conduction + switching losses by ~18% vs. prior-gen SO-8 MOSFETs, improving full-load efficiency to >95%.

Use Scenario: 48 V-to-12 V isolated DC/DC module for factory automation PLC I/O power rails.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, switching at 300 kHz.

Use Value: Low C_rss (12 pF) and tuned Q_g/Q_gd ratio suppress voltage spikes during turn-off, eliminating need for snubbers and reducing EMI filter size.

Brushless DC Motor Inverter

Telecom Rectifier Module

Use Scenario: 24 V three-phase inverter driving 500 W BLDC fan in telecom base station cooling system.

IC Role / Device Role / Timing Role: Low-side switch in 60° commutation, driven by 3.3 V microcontroller PWM outputs.

Use Value: V_GS(th) range (2.0–3.6 V) guarantees reliable turn-on with 3.3 V logic, while 45 A I_D rating handles peak motor currents up to 75 A.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier supplying -48 V backup power.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) channel used in self-driven synchronous rectification.

Use Value: Body diode t_rr = 48 ns and V_SD = 0.77 V (at 5 A) minimize reverse recovery loss and forward drop, increasing rectifier efficiency by 1.2% at 20 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR106DP-T1-RE3	Lower V_DS (80 V), lower R_DS(on) (11.5 mΩ), same package and pinout	Better suited for 24–48 V systems; not rated for 100 V bus transients	Select when input voltage stays ≤60 V and lowest possible conduction loss is critical
IRF7470PBF	SO-8 package, higher R_DS(on) (18 mΩ), higher Q_g (32 nC), no 100% UIS test	Legacy part with inferior thermal resistance (R_thJC = 3.0 °C/W) and no PowerPAK thermal advantage	Acceptable for cost-sensitive, low-frequency (<200 kHz), low-power designs where thermal margin is ample

Compared with SiR106DP-T1-RE3, SIR108DP-T1-RE3 trades 15 mΩ lower R_DS(on) for 20 V higher breakdown, making it safer in 100 V industrial or telecom surge environments; versus IRF7470PBF, it delivers 25% lower conduction loss and 35% lower switching loss at 500 kHz, with verified avalanche ruggedness.

Availability

SIR108DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, BLDC motor inverters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for SIR108DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR108DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered specifically for high-current, high-frequency power conversion where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current rating for SIR108DP-T1-RE3 at 70 °C case temperature?

The SIR108DP-T1-RE3 has a continuous drain current rating of 36 A at T_C = 70 °C, per its Absolute Maximum Ratings table. This value reflects derating from the 45 A rating at T_C = 25 °C due to thermal limits, and is validated under steady-state conditions with proper PCB copper area and airflow. The SIR108DP-T1-RE3 must be mounted on a minimum recommended land pattern per Application Note AN826 to achieve this rating reliably.

Does SIR108DP-T1-RE3 support logic-level gate drive?

Yes, the SIR108DP-T1-RE3 supports logic-level gate drive with a guaranteed V_GS(th) range of 2.0 V to 3.6 V at I_D = 250 μA. It fully enhances at V_GS = 5 V (R_DS(on) = 0.0160 Ω max), making it compatible with standard 3.3 V and 5 V microcontrollers and gate drivers. The SIR108DP-T1-RE3 does not require level-shifting circuitry in most digital control applications.

What is the thermal resistance from junction to case (R_thJC) for SIR108DP-T1-RE3, and how is it measured?

The SIR108DP-T1-RE3 has a typical junction-to-case (drain) thermal resistance of 1.6 °C/W, with a maximum of 1.9 °C/W, measured under steady-state conditions with the case (drain pad) mounted to an infinite heat sink. This value is defined in the Thermal Resistance Ratings table and reflects conduction through the exposed drain copper to the PCB. The SIR108DP-T1-RE3 achieves this performance via its PowerPAK SO-8 construction, which places the die directly on the thermally optimized bottom-side copper.

Is SIR108DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?

Yes, the SIR108DP-T1-RE3 is well-suited for synchronous rectification in LLC resonant converters due to its low Q_gd/Q_g ratio (18.7%), fast body diode recovery (t_rr = 48–96 ns), and low R_DS(on) (13.5 mΩ). These characteristics minimize dead-time losses and reverse recovery spikes during zero-voltage switching transitions. The SIR108DP-T1-RE3 has been validated in such topologies per Vishay application notes AN821 and AN826.

What packaging and compliance certifications apply to SIR108DP-T1-RE3?

The SIR108DP-T1-RE3 is supplied in tape-and-reel format (T1) with Pb-free and halogen-free construction, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-RE3" suffix denotes lead (Pb)-free and halogen-free packaging. The device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is qualified for reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C.

SIR108DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 12.4A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2060 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR108DP-T1-RE3 FAQ

1.How can I place an order for SIR108DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR108DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR108DP-T1-RE3 reliable?

The price and inventory of SIR108DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR108DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR108DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR108DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR108DP-T1-RE3?

SIR108DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR108DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR108DP-T1-RE3?

For technical support, including SIR108DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR108DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR108DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR108DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR108DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR108DP-T1-RE3?

All SIR108DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR108DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR108DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR108DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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