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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR112DP-T1-RE3

Name: SIR112DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR112DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR112DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR112DP-T1-RE3.pdf

Description:: MOSFET N-CH 40V 37.6A/133A PPAK

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Product details

Overview

SIR112DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 1.96 mΩ at V_GS = 10 V and 2.65 mΩ at V_GS = 4.5 V, with 133 A continuous drain current (T_C = 25 °C) and 28.7 nC total gate charge - optimized for high-efficiency synchronous rectification and VRM load switching in server and telecom DC/DC converters.

For engineers reviewing the SIR112DP-T1-RE3 datasheet, SIR112DP-T1-RE3 pinout, SIR112DP-T1-RE3 application, or SIR112DP-T1-RE3 equivalent, key selection criteria include its low Q_gd/Q_gs ratio (<1), 100% R_g and UIS testing, junction-to-case thermal resistance of 1.6 °C/W, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance and fast switching with minimized gate charge asymmetry (Q_gd/Q_gs < 1), reducing voltage overshoot and improving hard-switching robustness. Its 40 V V_DS rating and ±16 V V_GS range support operation in 12 V and 48 V intermediate bus architectures.

The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct thermal coupling to the PCB, enabling junction-to-case thermal resistance as low as 1.6 °C/W and eliminating reliance on leadframe conduction - a structural departure from legacy SO-8 that sustains 133 A continuous current without derating at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 12 V and 48 V input rails with 2× safety margin for transient clamping in VRMs and OR-ing circuits
R_DS(on) @ 10 V	1.96 mΩ - enables ≤ 25 W conduction loss at 100 A, critical for high-current point-of-load stages
R_DS(on) @ 4.5 V	2.65 mΩ - ensures stable operation with 5 V gate drive in logic-level control systems
Q_g typ.	28.7 nC - low total gate charge reduces driver power loss and enables >1 MHz switching in resonant topologies
I_D cont. (T_C = 25 °C)	133 A - highest-rated single-die PowerPAK SO-8 device in Vishay's 40 V portfolio, suitable for primary-side switches in high-density DC/DC
R_thJC max.	2.0 °C/W - allows direct thermal path from die to PCB copper, enabling heatsink-free operation up to 40 W dissipation
Q_gd/Q_gs ratio	< 1 - suppresses Miller-induced shoot-through in half-bridge configurations and improves EMI behavior

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with 5.15 mm × 6.15 mm footprint, identical to standard SO-8 but featuring exposed drain copper on the bottom side for enhanced thermal transfer. The package uses a single-die configuration with three terminals: Gate (G), Source (S), and Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce package inductance and improve current sharing in high-di/dt applications like synchronous buck converters
5	Gate (G)	Single gate terminal with 0.2–2 Ω gate resistance - compatible with standard gate drivers without external series resistance
6, 7, 8	Drain (D)	Three exposed-drain terminals on bottom side provide low-inductance, high-current return path to PCB ground plane; no solder fillet required at edge

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables 1.96 mΩ R_DS(on) at 40 V rating - 25 % lower on-resistance than prior-gen equivalents without increasing die size
100 % R_g and UIS tested	Guarantees gate robustness against overvoltage transients and avalanche energy handling up to 45 mJ per pulse
Q_gd/Q_gs < 1	Reduces Miller plateau duration by >30 % vs. conventional MOSFETs, minimizing cross-conduction risk in synchronous rectifiers
PowerPAK® SO-8 footprint	Drop-in replacement for standard SO-8 layouts - no PCB redesign needed while delivering DPAK-level thermal performance (R_thJC = 1.6 °C/W)
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Synchronous Rectification	OR-ing Circuit
Use Scenario: Secondary-side switch in isolated 48 V–12 V DC/DC converters for AI accelerators and high-end servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95 %. Use Value: 1.96 mΩ R_DS(on) cuts conduction loss by 65 % vs. 40 V Schottky, enabling 2.3 W less heat generation at 100 A output.	Use Scenario: Redundant 12 V power supply combining in telecom base station backplanes. IC Role / Device Role / Timing Role: Active OR-ing switch controlling power path between two hot-swap supplies with reverse-current blocking. Use Value: 40 V V_DS rating and 30 A pulsed avalanche current (I_AS) ensure safe turn-off during supply fault events without external protection.
High-Power-Density DC/DC	VRM Load Switch
Use Scenario: Primary-side high-side switch in 48 V–3.3 V non-isolated buck converters for GPU VRMs. IC Role / Device Role / Timing Role: High-current, high-frequency switching element operating at 500 kHz–1 MHz with minimal switching loss. Use Value: 28.7 nC Q_g and 90 pF Crss enable clean 15 ns turn-on delay and 27 ns rise time at 10 A, supporting tight dead-time control.	Use Scenario: Inrush current limiter and hot-swap controller for PCIe add-in cards and NVMe SSD modules. IC Role / Device Role / Timing Role: Load switch managing 50 A steady-state current with controlled slew rate during power-up sequencing. Use Value: 133 A I_D rating and 57 A continuous body diode current (I_S) allow full-system power cycling without derating or paralleling.

Synchronous Rectification

OR-ing Circuit

Use Scenario: Secondary-side switch in isolated 48 V–12 V DC/DC converters for AI accelerators and high-end servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95 %.

Use Value: 1.96 mΩ R_DS(on) cuts conduction loss by 65 % vs. 40 V Schottky, enabling 2.3 W less heat generation at 100 A output.

Use Scenario: Redundant 12 V power supply combining in telecom base station backplanes.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling power path between two hot-swap supplies with reverse-current blocking.

Use Value: 40 V V_DS rating and 30 A pulsed avalanche current (I_AS) ensure safe turn-off during supply fault events without external protection.

High-Power-Density DC/DC

VRM Load Switch

Use Scenario: Primary-side high-side switch in 48 V–3.3 V non-isolated buck converters for GPU VRMs.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element operating at 500 kHz–1 MHz with minimal switching loss.

Use Value: 28.7 nC Q_g and 90 pF Crss enable clean 15 ns turn-on delay and 27 ns rise time at 10 A, supporting tight dead-time control.

Use Scenario: Inrush current limiter and hot-swap controller for PCIe add-in cards and NVMe SSD modules.

IC Role / Device Role / Timing Role: Load switch managing 50 A steady-state current with controlled slew rate during power-up sequencing.

Use Value: 133 A I_D rating and 57 A continuous body diode current (I_S) allow full-system power cycling without derating or paralleling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR108DP-T1-RE3	R_DS(on) = 2.25 mΩ @ 10 V; 120 A I_D; same PowerPAK SO-8 package	Lower current rating and slightly higher on-resistance - suitable where thermal margin exceeds 10 W	Select when system peak current stays below 110 A and cost sensitivity outweighs 10 % conduction loss reduction
IRL8726PBF	R_DS(on) = 2.3 mΩ @ 10 V; TO-252 (DPAK) package; R_thJC = 1.2 °C/W	Requires PCB layout change; superior thermal resistance but larger footprint and higher parasitic inductance	Prefer only if existing design uses DPAK land pattern and board space permits larger outline

Compared with SIR112DP-T1-RE3, SiR108DP-T1-RE3 trades 10 % higher R_DS(on) for lower unit cost, while IRL8726PBF offers better thermal resistance but demands layout revision and sacrifices switching speed due to higher Q_g (42 nC). SIR112DP-T1-RE3 uniquely balances ultra-low on-resistance, SO-8 compatibility, and sub-30 nC gate charge for next-gen power density.

Availability

SIR112DP-T1-RE3 is available at Aetrix Electronics and suitable for high-current synchronous rectification, OR-ing, and VRM load switching requiring stable component supply across server, telecom, and industrial embedded programs.

Supply support for SIR112DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR112DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 product line, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter and 5G infrastructure where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SIR112DP-T1-RE3 at 70 °C case temperature?

The SIR112DP-T1-RE3 supports 106 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under sustained high-power operation and assumes proper PCB copper area for heat spreading. At T_C = 25 °C, the rating is 133 A - the highest among Vishay's 40 V PowerPAK SO-8 devices. The SIR112DP-T1-RE3 maintains this capability without requiring external heatsinking when mounted on ≥0.5 in² of 2 oz copper.

Does SIR112DP-T1-RE3 require special reflow profile considerations due to its PowerPAK® SO-8 package?

Yes - the SIR112DP-T1-RE3 uses a leadless PowerPAK® SO-8 package with exposed drain copper, requiring adherence to Vishay's Pb-free reflow profile (peak: 255 °C, time above 217 °C: 60–150 s). Manual soldering with an iron is not recommended. The SIR112DP-T1-RE3 must be processed using controlled convection reflow to ensure uniform heating of the bottom-side thermal pad. Reference document 73257 for full profile details. The SIR112DP-T1-RE3 is qualified per J-STD-020 moisture sensitivity level 1.

Can SIR112DP-T1-RE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes - the SIR112DP-T1-RE3 shares identical mechanical footprint, pinout, and land pattern compatibility with standard SO-8 packages, enabling drop-in replacement without layout changes. However, because the SIR112DP-T1-RE3 places its drain terminals on the bottom side, PCB traces must avoid routing under the device body. The SIR112DP-T1-RE3 delivers DPAK-level thermal performance (R_thJC = 1.6 °C/W) within the SO-8 outline, making it a true performance upgrade path.

What is the body diode forward voltage of SIR112DP-T1-RE3 at 5 A source current?

The body diode forward voltage (V_SD) of the SIR112DP-T1-RE3 is specified as 0.72 V (typical) to 1.1 V (max) at I_S = 5 A and T_J = 25 °C. This low V_SD minimizes conduction loss during reverse recovery and supports efficient operation in bidirectional topologies such as active clamp forward converters. The SIR112DP-T1-RE3 also specifies t_rr = 45 ns (typical) and Q_rr = 45 nC (typical), confirming fast, soft-recovery characteristics suitable for high-frequency synchronous rectification.

Is SIR112DP-T1-RE3 suitable for automotive applications?

No - the SIR112DP-T1-RE3 is not AEC-Q101 qualified and is not intended for automotive use. Its operating junction temperature range is –55 °C to +150 °C, but Vishay does not certify this part for automotive-grade reliability testing, PPAP documentation, or failure analysis protocols. For automotive OR-ing or DC/DC applications, engineers should select Vishay's AEC-Q101-qualified PowerPAK SO-8 devices such as the SQJQ480E or SIJQ480E. The SIR112DP-T1-RE3 is designed exclusively for industrial, computing, and telecom infrastructure.

SIR112DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 37.6A (Ta), 133A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.96mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 4270 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR112DP-T1-RE3 FAQ

1.How can I place an order for SIR112DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR112DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR112DP-T1-RE3 reliable?

The price and inventory of SIR112DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR112DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR112DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR112DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR112DP-T1-RE3?

SIR112DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR112DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR112DP-T1-RE3?

For technical support, including SIR112DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR112DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR112DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR112DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR112DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR112DP-T1-RE3?

All SIR112DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR112DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR112DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR112DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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