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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR122LDP-T1-RE3

Name: SIR122LDP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR122LDP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR122LDP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR122LDP-T1-RE3.pdf

Description:: N-CHANNEL 80-V (D-S) MOSFET POWE

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Product details

Overview

SIR122LDP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 7.35 mΩ @ V_GS = 10 V, Q_g = 15.7 nC @ V_GS = 4.5 V, and continuous drain current of 62.3 A at T_C = 25 °C. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.

For engineers reviewing the SIR122LDP-T1-RE3 datasheet, SIR122LDP-T1-RE3 pinout, SIR122LDP-T1-RE3 application, or SIR122LDP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS testing, and suitability for thermally constrained board-level designs using surface-mount 1" × 1" FR4 layouts.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for minimal conduction and switching losses in hard-switched and synchronous rectification topologies. Its gate charge profile supports fast turn-on/turn-off with t_d(on) = 25 ns and t_f = 11 ns under V_GEN = 4.5 V drive conditions.

The device integrates a robust body diode with t_rr = 38 ns and Q_rr = 57 nC at I_F = 10 A, enabling reliable operation in OR-ing and bidirectional power path applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for primary-side switch use in ≤ 48 V input DC/DC and motor drive half-bridges
R_DS(on) @ 10 V	7.35 mΩ - Enables <1.5 W conduction loss at 60 A, supporting high-current power stages without forced air cooling
Q_g @ 4.5 V	15.7 nC - Low gate drive energy reduces controller loading and enables efficient 1–2 MHz operation in compact converters
I_D (T_C = 25 °C)	62.3 A - Continuous current rating defined at case temperature, suitable for heatsinked or copper-pour PCB thermal management
R_thJC	1.6 °C/W - Junction-to-case thermal resistance allows direct thermal interface to heatsinks or metal-core PCBs for high-power density designs
Q_rr	57 nC - Body diode reverse recovery charge supports clean commutation in synchronous buck and OR-ing configurations

Pinout & Package

Package: PowerPAK® SO-8 - leadless surface-mount package with exposed drain paddle on bottom side; dimensions 6.15 mm × 5.15 mm; requires reflow soldering per profile www.vishay.com/doc?73257.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to exposed copper paddle for low-inductance, high-current output path and thermal conduction
G (Gate)	Gate (G)	Single gate terminal located at pin 1 position (top view); requires controlled 4.5–10 V drive with <1.8 Ω gate resistance

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching loss in high-frequency DC/DC converters
100% R_g tested	Ensures consistent gate drive timing and predictable turn-on behavior across production lots
100% UIS tested	Guarantees ruggedness against unclamped inductive switching events in motor control and power supply startup
Exposed drain paddle	Provides dual-path thermal dissipation-through PCB copper pour and optional heatsink attachment-to sustain 65.7 W P_D

Applications

Server VRM Synchronous Rectifier	Industrial DC/DC Primary Switch
Use Scenario: High-current, multiphase 48 V–12 V buck converter in AI accelerator servers requiring >95% efficiency at 60 A per phase. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes; driven by complementary PWM signals with precise dead-time control. Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling higher power density and lower junction temperature rise under full load.	Use Scenario: Isolated flyback or forward converter in programmable logic controller (PLC) power supplies with 24–48 V input. IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–300 kHz with ZVS-assisted soft switching. Use Value: Low Q_g and R_DS(on) minimize total switching + conduction loss, improving light-load efficiency and reducing heatsink size.
Battery OR-ing Controller	BLDC Motor Phase Switch
Use Scenario: Dual-battery redundancy system in medical portable devices where seamless switchover must occur within 100 ns. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current path with body diode assist. Use Value: Fast t_rr = 38 ns and low V_SD = 0.77 V enable sub-μs reverse recovery, eliminating cross-conduction risk during battery handover.	Use Scenario: 3-phase inverter driving 200 W BLDC motor in cordless power tools with space-constrained PCB layout. IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; handles peak currents up to 150 A (pulsed) with minimal voltage overshoot. Use Value: R_thJC = 1.6 °C/W and 150 A I_DM rating allow sustained 30 A RMS operation without thermal derating on 2-oz copper.

Server VRM Synchronous Rectifier

Industrial DC/DC Primary Switch

Use Scenario: High-current, multiphase 48 V–12 V buck converter in AI accelerator servers requiring >95% efficiency at 60 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes; driven by complementary PWM signals with precise dead-time control.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling higher power density and lower junction temperature rise under full load.

Use Scenario: Isolated flyback or forward converter in programmable logic controller (PLC) power supplies with 24–48 V input.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–300 kHz with ZVS-assisted soft switching.

Use Value: Low Q_g and R_DS(on) minimize total switching + conduction loss, improving light-load efficiency and reducing heatsink size.

Battery OR-ing Controller

BLDC Motor Phase Switch

Use Scenario: Dual-battery redundancy system in medical portable devices where seamless switchover must occur within 100 ns.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current path with body diode assist.

Use Value: Fast t_rr = 38 ns and low V_SD = 0.77 V enable sub-μs reverse recovery, eliminating cross-conduction risk during battery handover.

Use Scenario: 3-phase inverter driving 200 W BLDC motor in cordless power tools with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; handles peak currents up to 150 A (pulsed) with minimal voltage overshoot.

Use Value: R_thJC = 1.6 °C/W and 150 A I_DM rating allow sustained 30 A RMS operation without thermal derating on 2-oz copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR126LDP-T1-RE3	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 21.5 nC - lower R_DS(on) but higher gate charge increases drive loss at >1 MHz	Better suited for low-frequency, high-current applications where conduction loss dominates (e.g., solar MPPT)	Select when thermal budget is dominated by I²R loss and switching frequency is ≤ 300 kHz
IRF7470PBF	SO-8 package; R_DS(on) = 8.5 mΩ @ 10 V; Q_g = 12.5 nC - lower Q_g but higher R_DS(on) and no UIS rating	Acceptable for cost-sensitive consumer DC/DC where ruggedness requirements are relaxed	Choose only if UIS testing and 150 A pulsed current capability are not required

Compared with SiR126LDP-T1-RE3 and IRF7470PBF, the SIR122LDP-T1-RE3 delivers optimal balance of low R_DS(on), moderate Q_g, and full ruggedness validation-making it preferred for industrial-grade 1–2 MHz synchronous rectifiers and primary switches where reliability and efficiency co-constrain design.

Availability

SIR122LDP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, battery OR-ing systems, and BLDC motor drives requiring stable component supply and long-term lifecycle support.

Supply support for SIR122LDP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The TrenchFET® Gen IV product line targets high-efficiency power conversion in datacenter, industrial, and automotive applications-designed specifically to minimize R_DS(on) × Q_oss and enhance thermal performance in surface-mount packages like PowerPAK SO-8.

FAQ

What is the maximum continuous drain current rating for SIR122LDP-T1-RE3 at 70 °C case temperature?

The SIR122LDP-T1-RE3 has a continuous drain current rating of 50 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations when ambient or heatsink conditions restrict case temperature rise, and must be used in conjunction with R_thJC = 1.6 °C/W to calculate allowable power dissipation in real-world layouts.

Does SIR122LDP-T1-RE3 support gate drive voltages below 4.5 V?

The SIR122LDP-T1-RE3 is characterized down to V_GS = 4.5 V, with R_DS(on) = 9.0 mΩ max at that level. Gate threshold voltage V_GS(th) ranges from 1.0 V to 2.5 V, but operation below 4.5 V results in significantly higher on-resistance and unpredictable switching behavior; Vishay does not guarantee performance or safe operating area below 4.5 V drive.

Is SIR122LDP-T1-RE3 suitable for avalanche energy handling in inductive load switching?

Yes-the SIR122LDP-T1-RE3 is 100% UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 31.25 mJ and avalanche current I_AS = 25 A with L = 0.1 mH. This validates its ability to safely absorb inductive kickback in motor gate drivers and relay snubbers without external clamping.

What is the recommended rework method for SIR122LDP-T1-RE3 given its leadless PowerPAK SO-8 package?

Vishay explicitly advises against manual soldering with a soldering iron for the SIR122LDP-T1-RE3 due to its leadless construction and exposed drain paddle. Rework must use precision hot-air reflow stations with profile matching JEDEC J-STD-020 and peak temperature ≤ 260 °C, as documented in www.vishay.com/doc?73257.

How does the body diode performance of SIR122LDP-T1-RE3 compare to discrete Schottky diodes in synchronous rectification?

The SIR122LDP-T1-RE3 body diode exhibits V_SD = 0.77 V at 5 A and t_rr = 38 ns, offering lower forward drop than typical 45 V Schottky diodes (≥ 0.85 V) and faster recovery than standard silicon diodes. While not as fast as ultra-fast Schottkys, its integrated nature eliminates parasitic inductance and simplifies layout-making it superior for compact, high-density synchronous rectifiers where layout-induced ringing is a concern.

SIR122LDP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 17.2A (Ta), 62.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.35mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2380 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR122LDP-T1-RE3 FAQ

1.How can I place an order for SIR122LDP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR122LDP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR122LDP-T1-RE3 reliable?

The price and inventory of SIR122LDP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR122LDP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR122LDP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR122LDP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR122LDP-T1-RE3?

SIR122LDP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR122LDP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR122LDP-T1-RE3?

For technical support, including SIR122LDP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR122LDP-T1-RE3 requirements.

6.How does Aetrix verify that SIR122LDP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR122LDP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR122LDP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR122LDP-T1-RE3?

All SIR122LDP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR122LDP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR122LDP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR122LDP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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