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Vishay Siliconix SIR1309DP-T1-GE3
- Part No.:
- SIR1309DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR1309DP-T1-GE3.pdf
- Description:
- P-CHANNEL 30 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:4,519
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Product details
Overview
SIR1309DP-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for -30 V VDS, 0.0073 Ω RDS(on) at -10 V VGS, and -65.7 A continuous drain current at TC = 25 °C. It serves as a high-current load switch in battery management and adapter circuits with low gate charge (28 nC typ. at -4.5 V) and robust UIS testing.
For engineers reviewing the SIR1309DP-T1-GE3 datasheet, SIR1309DP-T1-GE3 pinout, SIR1309DP-T1-GE3 application, or SIR1309DP-T1-GE3 equivalent, key selection factors include its -30 V rating, sub-10 mΩ on-resistance at logic-level drive, thermal resistance (RthJC = 1.8 °C/W), body diode recovery (trr = 18 ns), and PowerPAK SO-8 leadless footprint compatibility with high-density PCB layouts.
Technical Context
This P-channel MOSFET employs trench-based silicon architecture optimized for low RDS(on) and fast switching in high-side load-switch configurations. Its gate threshold voltage range (-1 V to -2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic controllers, while the 100 % Rg and UIS tested qualification ensures gate robustness and avalanche energy handling (EAS = 20 mJ).
The device features integrated source-drain body diode with VSD = -0.75 V (typ.) at -5 A and Qrr = 8 nC (typ.), supporting synchronous rectification and flyback recovery in motor drive control. Thermal design leverages the exposed drain paddle in PowerPAK SO-8 for direct heatsinking, delivering 56.8 W maximum power dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 24 V system rail protection and reverse polarity safeguarding |
| RDS(on) max @ -10 V | 0.0073 Ω - Enables <100 mW conduction loss at 30 A, critical for thermally constrained battery switches |
| RDS(on) max @ -4.5 V | 0.0130 Ω - Supports direct interfacing with 3.3 V microcontrollers without level-shifting circuitry |
| Qg typ. @ -4.5 V | 28 nC - Reduces gate drive power and switching losses in high-frequency load switching (e.g., USB PD adapters) |
| ID cont. @ TC = 25 °C | -65.7 A - Delivers high peak current capability for motor startup and surge-limited hot-swap applications |
| RthJC max | 2.2 °C/W - Allows efficient heat transfer to PCB copper or external heatsink, enabling >40 W sustained operation |
| trr typ. | 18 ns - Minimizes reverse recovery losses during commutation in half-bridge motor drivers |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed drain paddle). Dimensions: 6.15 mm × 5.15 mm. The bottom-side drain paddle provides primary thermal path; solder fillet at copper tip not required per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with Rg = 1.1–3.8 Ω - supports controlled turn-on/turn-off without external gate resistor in many designs |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed copper paddle - forms low-impedance thermal and electrical path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 18 % lower RDS(on) vs. prior generation at same voltage rating, improving efficiency in portable power systems |
| 100 % Rg and UIS tested | Ensures gate oxide integrity and single-pulse avalanche survivability up to 20 mJ - critical for unregulated input surges |
| PowerPAK SO-8 leadless construction | Reduces parasitic inductance by >30 % vs. SO-8 with leads, enabling cleaner switching waveforms in high-speed load switching |
| Body diode trr = 18 ns (typ.) | Minimizes cross-conduction losses and EMI in synchronous buck or H-bridge topologies operating above 100 kHz |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS-001 CDM ESD classification (HBM >2 kV, CDM >1 kV) |
Applications
| Adapter Switch | Load Switch |
|---|---|
|
Use Scenario: USB-C PD adapter output stage managing 20 V/5 A delivery with reverse polarity and overcurrent protection. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery path; operates in static on/off mode with <100 ns transition time. Use Value: 0.0073 Ω RDS(on) limits voltage drop to <370 mV at 5 A, preserving regulation margin and reducing thermal load on compact adapter PCBs. |
Use Scenario: Hot-swap controller for industrial I/O module requiring inrush current limiting and fault isolation. IC Role / Device Role / Timing Role: Main power FET in discrete load switch circuit; driven by dedicated gate driver IC with adjustable slew rate. Use Value: -65.7 A rating and 20 mJ EAS withstand capability enable safe interruption of short-circuit events without device failure. |
| Battery Management | Motor Drive Control |
|
Use Scenario: Protection FET in 3-cell Li-ion battery pack (12.6 V max), isolating cell stack during overvoltage or overtemperature faults. IC Role / Device Role / Timing Role: Back-to-back configured P-channel switch providing bidirectional blocking and charge/discharge path control. Use Value: -30 V VDS rating exceeds pack OVP threshold with 20 % margin; low Qg enables fast shutdown (<1 μs) via protection IC. |
Use Scenario: High-side switch in brushed DC motor driver for automotive HVAC blower, operating from 12 V battery rail. IC Role / Device Role / Timing Role: PWM-controlled upper switch in half-bridge configuration; body diode handles freewheeling current during off-time. Use Value: 18 ns trr and 8 nC Qrr minimize switching losses and voltage spikes at 20 kHz PWM, extending motor brush life and reducing EMI filtering cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.012 Ω @ -10 V; Qg = 42 nC; TO-252 package; RthJA = 62 °C/W | Higher thermal resistance and larger footprint limit use in space-constrained 5 A+ load switches | Select when board layout allows DPAK and higher gate drive voltage (>10 V) is available |
| SI7148DP-T1-GE3 | RDS(on) = 0.0095 Ω @ -10 V; Qg = 22 nC; same PowerPAK SO-8; VDS = -25 V | Lower voltage rating restricts use to ≤20 V systems; superior gate charge for ultra-fast switching | Prefer for 3.3 V logic-driven 20 V battery switches where VDS margin is sufficient |
Compared with IRF7470PBF and SI7148DP-T1-GE3, the SIR1309DP-T1-GE3 offers the best balance of -30 V rating, sub-10 mΩ RDS(on), and 28 nC Qg in a thermally efficient PowerPAK SO-8, making it optimal for high-current, logic-level 24 V adapter and motor control designs.
Availability
SIR1309DP-T1-GE3 is available at Aetrix Electronics and suitable for adapter switch, battery management, and motor drive control applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIR1309DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIR1309DP-T1-GE3 belongs to Vishay's TrenchFET Gen IV P-channel MOSFET family, engineered for high-current, low-voltage load switching in space-constrained power systems including portable chargers, industrial PLCs, and automotive body electronics.
FAQ
What is the maximum continuous drain current for SIR1309DP-T1-GE3 at 70 °C case temperature?
The SIR1309DP-T1-GE3 supports -52.6 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be validated against actual PCB copper area and airflow conditions in the end application. The SIR1309DP-T1-GE3 datasheet confirms this rating applies to steady-state conduction with proper heatsinking.
Does SIR1309DP-T1-GE3 require a gate driver for 3.3 V microcontroller operation?
No, the SIR1309DP-T1-GE3 has a gate threshold voltage range of -1 V to -2.5 V and delivers 0.0130 Ω RDS(on) at -4.5 V VGS, enabling full enhancement with standard 3.3 V logic outputs. While a gate driver improves switching speed, the SIR1309DP-T1-GE3 can be directly driven by most MCU GPIO pins in static or low-frequency load-switch applications without additional buffering.
What is the thermal resistance from junction to case (RthJC) for SIR1309DP-T1-GE3?
The SIR1309DP-T1-GE3 has a typical junction-to-case thermal resistance of 1.8 °C/W and a maximum of 2.2 °C/W, measured from die junction to the exposed drain paddle. This low RthJC enables efficient heat transfer to the PCB ground plane or external heatsink, supporting >40 W power dissipation when mounted on ≥1 sq-in FR4 with 2 oz copper. The SIR1309DP-T1-GE3 datasheet specifies this value under steady-state conditions.
Is SIR1309DP-T1-GE3 suitable for reverse polarity protection in 24 V systems?
Yes, the SIR1309DP-T1-GE3 is commonly used for reverse polarity protection due to its -30 V VDS rating, which provides 25 % voltage margin above nominal 24 V rails. Its low RDS(on) minimizes insertion loss, and the integrated body diode blocks reverse current flow when oriented correctly. The SIR1309DP-T1-GE3's 100 % UIS testing further ensures robustness against line transients in automotive and industrial 24 V environments.
How does the PowerPAK SO-8 package of SIR1309DP-T1-GE3 differ from standard SO-8?
The PowerPAK SO-8 package of SIR1309DP-T1-GE3 is leadless, with the drain connected to an exposed copper paddle on the bottom surface instead of gull-wing leads. This eliminates bond wire inductance and reduces thermal resistance by >50 % compared to standard SO-8. The SIR1309DP-T1-GE3 uses this structure to achieve 1.8 °C/W RthJC and improved high-frequency performance, but requires compatible reflow profiles per Vishay document 73257.
SIR1309DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 19.1A (Ta), 65.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3250 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR1309DP-T1-GE3 FAQ
1.How can I place an order for SIR1309DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR1309DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR1309DP-T1-GE3 reliable?
The price and inventory of SIR1309DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR1309DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR1309DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR1309DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR1309DP-T1-GE3?
SIR1309DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR1309DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR1309DP-T1-GE3?
For technical support, including SIR1309DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR1309DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR1309DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR1309DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR1309DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR1309DP-T1-GE3?
All SIR1309DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR1309DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR1309DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR1309DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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