Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR140DP-T1-RE3

Name: SIR140DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR140DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR140DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR140DP-T1-RE3.pdf

Description:: MOSFET N-CH 25V 71.9A/100A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:11,100

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR140DP-T1-RE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.67 mΩ at V_GS = 10 V and 0.90 mΩ at V_GS = 4.5 V, with 100 A continuous drain current (T_C = 25 °C) and 52.8 nC total gate charge - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIR140DP-T1-RE3 datasheet, SIR140DP-T1-RE3 pinout, SIR140DP-T1-RE3 application, or SIR140DP-T1-RE3 equivalent, this device is selected for low conduction loss, fast switching in buck topologies, thermal robustness on FR4 boards, and compatibility with standard SO-8 land patterns while offering DPAK-level junction-to-case thermal resistance (R_thJC = 0.9 °C/W).

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture with optimized Q_g, Q_gd, and Q_gd/Q_gs ratio to minimize switching losses in hard-switched and synchronous rectifier applications. It features 100% R_g and UIS tested units, with guaranteed avalanche energy rating of 180 mJ (E_AS) and single-pulse avalanche current of 60 A.

The PowerPAK® SO-8 package provides exposed drain copper on the bottom side for direct thermal coupling to PCB copper, achieving R_thJC = 0.9 °C/W (typical) and R_thJA = 15 °C/W (typical, t ≤ 10 s), enabling high-power density operation without external heatsinks in properly designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input systems with margin.
R_DS(on) @ V_GS = 10 V	0.67 mΩ max - Enables <1 W conduction loss at 40 A, critical for high-current synchronous rectifiers.
R_DS(on) @ V_GS = 4.5 V	0.90 mΩ max - Ensures low on-resistance under logic-level gate drive, supporting 3.3 V/5 V controller interfaces.
Q_g typ.	52.8 nC - Low gate charge reduces driver power and enables efficient operation at >500 kHz switching frequencies.
I_D continuous (T_C = 25 °C)	100 A - High current capability supports single-device solutions in OR-ing and load switch applications up to 2.5 kW.
R_thJC (typ.)	0.9 °C/W - Thermal performance matches DPAK, allowing PCB copper to act as primary heatsink without mechanical attachment.
E_AS	180 mJ - Robust avalanche rating supports reliable operation during transient overvoltage events in buck and flyback circuits.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, 5.15 mm × 6.15 mm footprint, 1.04 mm height), compatible with standard SO-8 land patterns but with extended drain pad area for enhanced thermal conduction. Bottom-side exposed drain copper requires full-solder coverage per IPC-7095B.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Eight-drain-terminal configuration connects to large PCB copper pour for minimal R_thJA and high pulsed current handling.
Gate (G)	Control terminal	Single gate pin (Pin 1 in top view labeling) accepts standard gate drivers; low R_g (0.38 Ω typ.) minimizes ringing.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Reduces Q_gd/Q_gs ratio to 0.61 (at V_GS = 10 V), suppressing Miller-induced shoot-through in synchronous buck converters.
100% R_g tested	Ensures gate resistance ≤ 0.75 Ω, guaranteeing predictable turn-on/turn-off timing and driver compatibility.
Exposed drain thermal pad	Enables 0.9 °C/W R_thJC - delivers 2× thermal performance vs. standard SO-8, permitting 100 A operation on 1" × 1" FR4 board.
Body diode t_rr = 77 ns (typ.)	Fast reverse recovery minimizes commutation loss in synchronous rectification, reducing heat generation vs. slower diodes.
Pb-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, supporting environmentally compliant industrial and telecom designs.

Applications

Server VRM Synchronous Rectifier	Industrial 48 V OR-ing Circuit
Use Scenario: High-current output stage of a 4-phase 50 A server VRM, operating at 500 kHz with 3.3 V output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by dedicated gate controller with 4.5 V logic-level output. Use Value: Achieves 98.2% efficiency at full load by cutting conduction loss by 65% versus 3 mΩ alternatives, reducing thermal stress on adjacent components.	Use Scenario: Redundant 48 V power supply backplane where two supplies feed a common bus via ideal diode control. IC Role / Device Role / Timing Role: N-channel MOSFET used as active OR-ing switch, controlled by dedicated ideal diode IC monitoring forward voltage drop. Use Value: Enables <15 mV forward drop at 60 A, eliminating 3.6 W dissipation per device versus discrete diode solution and improving system MTBF.
High-Density Telecom DC/DC Converter	Battery Protection Load Switch
Use Scenario: 12 V input, 3.3 V/60 A output isolated DC/DC module in 1U telecom shelf with strict thermal envelope. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped topology; switched at 300–600 kHz with zero-voltage switching assist. Use Value: Delivers 2.1 W lower conduction loss than SiR872DP at same current, allowing 10 °C cooler junction temperature and extending lifetime by 2.3× (per Arrhenius model).	Use Scenario: Main battery disconnect switch in 24 V industrial battery management system, controlling 80 A peak load current. IC Role / Device Role / Timing Role: Single N-channel load switch with integrated gate driver and overtemperature shutdown. Use Value: Supports <100 μs fault response time due to low Q_g and fast body diode recovery, preventing damage during short-circuit events.

Server VRM Synchronous Rectifier

Industrial 48 V OR-ing Circuit

Use Scenario: High-current output stage of a 4-phase 50 A server VRM, operating at 500 kHz with 3.3 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by dedicated gate controller with 4.5 V logic-level output.

Use Value: Achieves 98.2% efficiency at full load by cutting conduction loss by 65% versus 3 mΩ alternatives, reducing thermal stress on adjacent components.

Use Scenario: Redundant 48 V power supply backplane where two supplies feed a common bus via ideal diode control.

IC Role / Device Role / Timing Role: N-channel MOSFET used as active OR-ing switch, controlled by dedicated ideal diode IC monitoring forward voltage drop.

Use Value: Enables <15 mV forward drop at 60 A, eliminating 3.6 W dissipation per device versus discrete diode solution and improving system MTBF.

High-Density Telecom DC/DC Converter

Battery Protection Load Switch

Use Scenario: 12 V input, 3.3 V/60 A output isolated DC/DC module in 1U telecom shelf with strict thermal envelope.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped topology; switched at 300–600 kHz with zero-voltage switching assist.

Use Value: Delivers 2.1 W lower conduction loss than SiR872DP at same current, allowing 10 °C cooler junction temperature and extending lifetime by 2.3× (per Arrhenius model).

Use Scenario: Main battery disconnect switch in 24 V industrial battery management system, controlling 80 A peak load current.

IC Role / Device Role / Timing Role: Single N-channel load switch with integrated gate driver and overtemperature shutdown.

Use Value: Supports <100 μs fault response time due to low Q_g and fast body diode recovery, preventing damage during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-RE3	R_DS(on) = 0.85 mΩ @ 10 V; Q_g = 42.5 nC; same PowerPAK SO-8 package	Lower gate charge improves light-load efficiency but higher R_DS(on) increases conduction loss above 45 A	Select for 30–50 A applications prioritizing switching loss reduction over peak current capability
IRL8726PBF	R_DS(on) = 0.75 mΩ @ 10 V; Q_g = 58 nC; TO-220 package; no Pb-free option	Larger thermal mass but higher R_thJC (1.5 °C/W); requires heatsink for >60 A operation	Choose when legacy TO-220 footprint is mandated and board space allows heatsink mounting

Compared with SiR872DP-T1-RE3, SIR140DP-T1-RE3 offers 11% lower R_DS(on) for higher current density, while versus IRL8726PBF it delivers 40% lower R_thJC and eliminates mechanical heatsinking - making it optimal for compact, high-reliability DC/DC and OR-ing designs.

Availability

SIR140DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial OR-ing circuits, and telecom DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIR140DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR140DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and load switching in space-constrained industrial and computing power systems.

FAQ

What is the maximum continuous drain current rating for SIR140DP-T1-RE3 at 70 °C case temperature?

The SIR140DP-T1-RE3 supports 100 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper layout per Vishay Application Note AN821 and adequate airflow or thermal spreading to maintain case temperature at or below 70 °C. Derating applies above this temperature.

Does SIR140DP-T1-RE3 require a heatsink in typical 4-layer FR4 applications?

No, the SIR140DP-T1-RE3 does not require an external heatsink when mounted on a standard 4-layer FR4 board with ≥0.3 in² of copper on the drain layer, per Vishay AN821. Its R_thJC = 0.9 °C/W and R_thJA = 15 °C/W (t ≤ 10 s) enable full 100 A operation with junction temperature maintained below 150 °C using only PCB copper as the thermal path.

Can SIR140DP-T1-RE3 be used with 3.3 V gate drive in synchronous buck converters?

Yes, the SIR140DP-T1-RE3 is fully characterized down to V_GS = 4.5 V, with R_DS(on) = 0.90 mΩ max at that voltage. While 3.3 V is below the specified test condition, its V_GS(th) range (1.0–2.1 V) ensures turn-on; however, R_DS(on) rises significantly below 4.5 V, so 3.3 V operation is feasible only at reduced current (<30 A) and must be validated per application.

What is the body diode reverse recovery time (t_rr) for SIR140DP-T1-RE3, and why does it matter?

The SIR140DP-T1-RE3 has t_rr = 77 ns (typ.) at I_F = 20 A, dI/dt = 100 A/μs, and T_J = 25 °C. This fast recovery minimizes reverse recovery charge (Q_rr = 100 nC typ.), reducing switching loss and EMI in synchronous rectifier applications - especially critical in high-frequency (>300 kHz) DC/DC converters where diode conduction occurs during dead time.

Is SIR140DP-T1-RE3 pin-compatible with standard SO-8 MOSFETs?

Yes, the SIR140DP-T1-RE3 uses the PowerPAK® SO-8 package with identical 5.15 mm × 6.15 mm footprint and pinout as standard SO-8 devices, including matching gate, source, and drain terminal locations. However, its leadless construction requires full-solder coverage of the bottom-side drain pad - unlike gull-wing leads - and rework with soldering iron is not recommended.

SIR140DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 71.9A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.67mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 8150 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR140DP-T1-RE3 FAQ

1.How can I place an order for SIR140DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR140DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR140DP-T1-RE3 reliable?

The price and inventory of SIR140DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR140DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR140DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR140DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR140DP-T1-RE3?

SIR140DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR140DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR140DP-T1-RE3?

For technical support, including SIR140DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR140DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR140DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR140DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR140DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR140DP-T1-RE3?

All SIR140DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR140DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR140DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR140DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …