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Vishay Siliconix SIR158DP-T1-RE3
- Part No.:
- SIR158DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR158DP-T1-RE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,654
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Product details
Overview
SIR158DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V, 60 A PowerPAK® SO-8 single MOSFET optimized for low-side switching in high-efficiency DC/DC converters, with RDS(on) = 1.45 mΩ at VGS = 10 V and 1.85 mΩ at VGS = 4.5 V, enabling high-current POL and VRM applications in server power supplies.
For engineers reviewing the SIR158DP-T1-RE3 datasheet, SIR158DP-T1-RE3 pinout, SIR158DP-T1-RE3 application, or SIR158DP-T1-RE3 equivalent, this device delivers verified 100% Rg and UIS testing, trench-based Gen III silicon, and thermal performance matching DPAK - critical for thermally constrained, high-density server and telecom power designs.
Technical Context
This MOSFET employs TrenchFET® Gen III process technology to achieve ultra-low on-resistance while maintaining robust avalanche capability (EAS = 125 mJ) and fast switching (Qg = 41.5 nC at 4.5 V). Its gate threshold voltage (VGS(th) = 1.2–2.5 V) supports direct drive from 3.3 V and 5 V controllers without level shifting.
The PowerPAK® SO-8 package features a fully exposed drain pad on the bottom side for low RthJC = 1.0 °C/W (typ.), enabling efficient heat transfer to PCB copper. It maintains identical footprint and pinout to standard SO-8 but replaces leads with solderable copper pads - requiring reflow-compatible land patterns per AN821 and AN826.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage suitable for 12 V input rails and synchronous rectification in buck converters. |
| RDS(on) @ 10 V | 1.45 mΩ (typ.) - Enables <1 W conduction loss at 60 A, critical for high-current point-of-load stages. |
| RDS(on) @ 4.5 V | 1.85 mΩ (typ.) - Supports direct logic-level drive from common PWM controllers, reducing gate driver complexity. |
| Qg @ 4.5 V | 41.5 nC (typ.) - Low gate charge minimizes switching losses and driver power requirements in high-frequency (>500 kHz) operation. |
| ID (TJ = 150 °C) | 60 A - Continuous current rating limited by package thermal capacity, not die capability. |
| RthJC | 1.0 °C/W (typ.) - Junction-to-case thermal resistance enables effective heatsinking via PCB copper, matching DPAK performance. |
| EAS | 125 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive switching transients in hard-switched topologies. |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless, surface-mount package with 5.15 mm × 6.15 mm footprint, 1.04 mm height, and exposed drain pad on bottom side for thermal conduction. Compatible with standard SO-8 land patterns but requires extended drain copper area per AN826 for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Eight-drain-pad configuration provides low-inductance, high-current path to PCB ground plane; bottom-side exposed copper serves as primary thermal interface. |
| Gate (G) | Control terminal | Single gate pin (Pin 1 in top view diagram) accepts standard gate drive signals; Rg = 0.7 Ω (max) ensures stable turn-on/turn-off timing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III silicon | Enables 1.45 mΩ RDS(on) at 10 V in SO-8 footprint - 40% lower than prior-gen equivalents, directly reducing I²R losses in high-current paths. |
| 100% Rg and UIS tested | Guarantees gate robustness against overvoltage and unclamped inductive switching stress - eliminates field failures in hard-switched converter outputs. |
| PowerPAK® SO-8 package | Delivers RthJC = 1.0 °C/W (typ.), matching DPAK thermal performance while retaining SO-8 board space - enables higher power density without layout redesign. |
| Low Qgd/Qgs ratio | Qgd = 13.8 nC / Qgs = 10.6 nC → ratio ≈ 1.3 - improves Miller immunity and reduces risk of spurious turn-on during high dv/dt commutation. |
| Body diode trr | 29 ns (typ.) - Fast reverse recovery minimizes shoot-through losses and EMI in synchronous rectifier applications. |
Applications
| Server VRM Output Stage | POL Converter in Telecom Equipment |
|---|---|
Use Scenario: High-current, high-frequency buck converter delivering 0.8–1.2 V at up to 120 A to CPU/GPU cores in rack-mounted servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–1000 kHz, conducting majority of output current during freewheeling phase. Use Value: 1.45 mΩ RDS(on) limits conduction loss to <1.05 W at 60 A, while low Qg enables efficient 4.5 V gate drive from integrated controller, reducing BOM count. |
Use Scenario: Point-of-load regulator powering FPGA, ASIC, or DSP in 48 V telecom infrastructure with strict efficiency and thermal constraints. IC Role / Device Role / Timing Role: Secondary-side switch in isolated forward or active-clamp forward topology, handling 30–60 A continuous current with tight thermal margin. Use Value: RthJC = 1.0 °C/W allows junction temperature rise of only ~2.7 °C above board temperature at 60 A, maintaining stable RDS(on) and preventing thermal runaway. |
| OR-ing Circuit in Redundant Power Supplies | Hot-Swap Controller Back-End Switch |
Use Scenario: Diode-replacement OR-ing function across dual 12 V inputs in enterprise storage enclosures, requiring low forward drop and fast reverse recovery. IC Role / Device Role / Timing Role: Unidirectional current path switch with body diode used for reverse current blocking; operated in linear mode during insertion. Use Value: VSD = 0.71 V (typ.) at 4 A yields lower forward drop than Schottky diodes, while trr = 29 ns prevents cross-conduction during input switchover. |
Use Scenario: Inrush-limiting and fault-isolation switch in hot-swap modules compliant with IEEE 1627 and IPC-9592 standards. IC Role / Device Role / Timing Role: Main power FET controlled by dedicated hot-swap IC (e.g., LTC4215), subjected to repeated surge currents and short-circuit events. Use Value: 125 mJ EAS rating and 400 A pulsed current capability withstand repeated 50–100 ms overload conditions without degradation, ensuring long-term reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR178DP-T1-RE3 | RDS(on) = 1.75 mΩ @ 10 V (higher), Qg = 37.5 nC @ 4.5 V (lower), same PowerPAK SO-8 package. | Better suited for gate-drive-limited designs where lower Qg outweighs slightly higher conduction loss. | Select SiR178DP-T1-RE3 when optimizing for switching loss over conduction loss in >1 MHz converters. |
| IRF6642TRPBF | Same VDS (30 V), RDS(on) = 1.6 mΩ @ 10 V, but uses DirectFET® L8 package with different footprint and thermal path. | Requires PCB redesign due to non-SO-8 footprint; offers superior RthJA on 2-layer boards but lacks SO-8 compatibility. | Choose IRF6642TRPBF only if board layout allows new footprint and thermal performance on minimal copper is prioritized. |
Compared with SiR178DP-T1-RE3, SIR158DP-T1-RE3 delivers lower conduction loss at high current but requires slightly more gate drive energy; versus IRF6642TRPBF, it retains SO-8 compatibility and simplifies migration from legacy designs but trades off some ambient thermal performance on sparse PCBs.
Availability
SIR158DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, redundant OR-ing circuits, and hot-swap modules requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.
Supply support for SIR158DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across industrial, computing, and telecom markets.
The SIR158DP-T1-RE3 belongs to Vishay's PowerPAK® SO-8 trench MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion where thermal density and gate drive simplicity are critical design constraints.
FAQ
What is the maximum continuous drain current rating for SIR158DP-T1-RE3 at 70 °C case temperature?
The SIR158DP-T1-RE3 is rated for 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package thermal limits under steady-state conditions with adequate PCB copper heatsinking, not die capability alone. The 60 A value remains constant from TC = 25 °C to 70 °C due to the PowerPAK® SO-8's low RthJC, making SIR158DP-T1-RE3 suitable for thermally demanding POL applications where case temperature exceeds ambient by >45 °C.
Does SIR158DP-T1-RE3 support 3.3 V gate drive in practical applications?
Yes, SIR158DP-T1-RE3 supports reliable 3.3 V gate drive due to its VGS(th) range of 1.2–2.5 V and guaranteed RDS(on) = 2.3 mΩ max at VGS = 4.5 V. At 3.3 V, typical RDS(on) is ~3.1 mΩ (extrapolated from transfer curves), enabling functional operation in logic-level designs - though conduction loss increases ~70% versus 4.5 V drive. For SIR158DP-T1-RE3, 3.3 V drive is viable in moderate-current (<30 A), thermally relaxed applications where gate driver integration outweighs efficiency trade-offs.
How does the PowerPAK® SO-8 package of SIR158DP-T1-RE3 differ from standard SO-8 in thermal performance?
The PowerPAK® SO-8 package of SIR158DP-T1-RE3 achieves RthJC = 1.0 °C/W (typ.), matching DPAK performance and improving ~15× over standard SO-8 (RthJC ≈ 16 °C/W). This is enabled by eliminating leads and exposing the full drain pad on the bottom side for direct thermal contact with PCB copper. Unlike standard SO-8, SIR158DP-T1-RE3 requires no thermal vias beneath the package - heat flows laterally through the copper, reducing junction-to-ambient rise by up to 40 °C at 60 A compared to equivalent SO-8 MOSFETs.
Is SIR158DP-T1-RE3 suitable for synchronous rectification in isolated DC/DC converters?
Yes, SIR158DP-T1-RE3 is well-suited for synchronous rectification in isolated forward, LLC, and active-clamp topologies. Its 29 ns body diode reverse recovery time (trr) and low Qrr = 22 nC minimize shoot-through losses and EMI during dead-time transitions. The 30 V VDS rating accommodates reflected output voltages plus ringing margins in 5–12 V secondary-side designs. For SIR158DP-T1-RE3, use with adaptive gate drivers that sense drain-source voltage ensures optimal timing and avoids cross-conduction.
What reflow profile should be used for SIR158DP-T1-RE3 assembly?
SIR158DP-T1-RE3 requires a Pb-free reflow profile per Vishay document 73257: peak temperature of 255 °C (±0°C tolerance), time above 217 °C of 60–150 s, ramp-down rate ≤6 °C/s, and maximum dwell at peak ≤30 s. The PowerPAK® SO-8's leadless construction demands precise thermal control - exceeding 255 °C risks solder joint voiding or delamination. For SIR158DP-T1-RE3, preheating to 150–200 °C for ≤120 s ensures uniform heating and prevents thermal shock to the exposed copper drain pad.
SIR158DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen III
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4980 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR158DP-T1-RE3 FAQ
1.How can I place an order for SIR158DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR158DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR158DP-T1-RE3 reliable?
The price and inventory of SIR158DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR158DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR158DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR158DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR158DP-T1-RE3?
SIR158DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR158DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR158DP-T1-RE3?
For technical support, including SIR158DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR158DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR158DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR158DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR158DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR158DP-T1-RE3?
All SIR158DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR158DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR158DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR158DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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