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Vishay Siliconix SIR164ADP-T1-GE3
- Part No.:
- SIR164ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR164ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35.9A/40A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,814
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Product details
Overview
SIR164ADP-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 2.2 mΩ at VGS = 10 V and 3.2 mΩ at VGS = 4.5 V, with 40 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIR164ADP-T1-GE3 datasheet, SIR164ADP-T1-GE3 pinout, SIR164ADP-T1-GE3 application, or SIR164ADP-T1-GE3 equivalent, key selection criteria include low gate charge (22.5 nC typ. at VGS = 4.5 V), robust UIS rating, and thermal performance with RthJC = 1.6 °C/W (typical) for high-density VRM and embedded power designs.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve ultra-low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 22.5 nC typ. at 4.5 V, Qgd = 4 nC) supports efficient operation in high-frequency synchronous buck topologies with minimal drive loss.
The device integrates a robust body diode with trr = 36 ns (typ.) and Qrr = 24 nC (typ.), enabling reliable reverse recovery in hard-switched and resonant converter stages. Thermal design is supported by a leadless PowerPAK® SO-8 package with exposed drain copper on the bottom side for direct PCB thermal coupling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC systems |
| RDS(on) max @ 10 V | 2.2 mΩ - Enables <1 W conduction loss at 20 A in high-current VRMs |
| RDS(on) max @ 4.5 V | 3.2 mΩ - Ensures stable operation with 5 V gate drive in logic-level control circuits |
| Qg typ. @ 4.5 V | 22.5 nC - Reduces gate drive power and enables >1 MHz switching in compact power stages |
| ID cont. @ TC = 25 °C | 40 A - Supports high-current output rails without external heatsinking under case-cooled conditions |
| RthJC max | 2.0 °C/W - Allows precise junction temperature estimation when mounted on thermally enhanced PCBs |
| trr typ. | 36 ns - Minimizes body diode switching loss and EMI in synchronous rectifier mode |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H). Bottom-side drain pad provides primary thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad on bottom surface - primary thermal interface to PCB ground plane |
| Gate (G) | Control terminal | Single gate connection (Pin 1 not used as gate; gate is internal to die - external G connection is via dedicated pad per package drawing) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 2.2 mΩ RDS(on) in PowerPAK® SO-8 - 25 % lower than prior-gen equivalents at same voltage rating |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<2.5 Ω max) and ruggedness against unclamped inductive switching stress |
| Low Qgd/Qg ratio | 0.177 (4 nC / 22.5 nC) - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments |
| Body diode Qrr | 24 nC (typ.) - lowers reverse recovery loss versus standard MOSFETs, critical for ZVS/ZCS soft-switching topologies |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for automotive and industrial end equipment |
Applications
| Server VRM Output Stage | High-Density Telecom DC/DC |
|---|---|
Use Scenario: Primary high-side or synchronous rectifier switch in 48 V–12 V intermediate bus converters powering CPU/GPU VRMs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–600 kHz with 5 V gate drive. Use Value: 3.2 mΩ RDS(on) at 4.5 V enables >95 % efficiency at 40 A load while minimizing board area vs. discrete dual-MOSFET solutions. | Use Scenario: Secondary-side synchronous rectifier in isolated 48 V input telecom PSUs delivering 12 V/20 A outputs. IC Role / Device Role / Timing Role: N-channel rectifier controlled by transformer-coupled or active clamp timing signals. Use Value: 36 ns body diode trr and low Qrr reduce cross-conduction loss and EMI during dead-time transitions. |
| Industrial PLC Power Module | Embedded Computing PMIC |
Use Scenario: Input protection and hot-swap FET in 24 V industrial power distribution units with overcurrent and reverse polarity protection. IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing and thermal foldback. Use Value: 40 A continuous rating and 20 mJ single-pulse avalanche energy support robust fault handling without external crowbar circuitry. | Use Scenario: Point-of-load (POL) regulator switch in fanless edge AI accelerators requiring silent, compact 5 V–1.8 V conversion. IC Role / Device Role / Timing Role: Low-voltage, high-current buck switch operating at 1.2 MHz with integrated controller feedback. Use Value: 22.5 nC total gate charge minimizes driver IC power consumption and allows use of low-cost SOT-23 gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 3.1 mΩ @ 10 V; Qg = 27 nC @ 4.5 V; TO-252 package | Higher thermal resistance (RthJA ≈ 62 °C/W) limits power density in space-constrained layouts | Prefer SIR164ADP-T1-GE3 where PCB area and thermal performance are critical; IRF7470PBF suits cost-sensitive through-hole or larger footprint designs. |
| DMN3020LSD-13 | RDS(on) = 2.8 mΩ @ 10 V; Qg = 20 nC @ 4.5 V; PowerDI 3333 package (3.3 mm × 3.3 mm) | Smaller footprint but lower ID rating (20 A) and no 100 % UIS test screening | Select SIR164ADP-T1-GE3 for 40 A continuous operation and proven ruggedness; DMN3020LSD-13 fits ultra-compact POLs below 20 A. |
Compared with IRF7470PBF and DMN3020LSD-13, the SIR164ADP-T1-GE3 delivers the best balance of low RDS(on), high current capability, and production-tested ruggedness in a thermally optimized 6.15 mm × 5.15 mm leadless package - making it optimal for high-reliability, high-power-density server and telecom power stages.
Availability
SIR164ADP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIR164ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, reliability, and miniaturization.
The SIR164ADP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and load switching in enterprise and infrastructure power systems.
FAQ
What is the maximum continuous drain current rating for the SIR164ADP-T1-GE3 at 70 °C case temperature?
The SIR164ADP-T1-GE3 supports 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 40 A value at 25 °C case temperature and is validated under steady-state thermal conditions with adequate PCB copper area for heat spreading. The SIR164ADP-T1-GE3 maintains this current capability due to its low RthJC of 1.6 °C/W (typical) and robust silicon design.
Does the SIR164ADP-T1-GE3 have a specified avalanche energy rating?
Yes, the SIR164ADP-T1-GE3 has a single-pulse avalanche energy rating of 20 mJ (EAS) with L = 0.1 mH, as confirmed in the Absolute Maximum Ratings table. This rating is measured under standardized test conditions and indicates the device's ability to withstand unclamped inductive switching events without failure. The SIR164ADP-T1-GE3 is 100 % UIS tested, ensuring each unit meets this specification before shipment.
What is the typical gate-to-source threshold voltage range for the SIR164ADP-T1-GE3?
The SIR164ADP-T1-GE3 has a gate-source threshold voltage (VGS(th)) range of 1.1 V to 2.2 V at TJ = 25 °C and ID = 250 μA, per the Specifications table. This low-threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. The VGS(th) exhibits a negative temperature coefficient of −5.5 mV/°C, providing inherent current-limiting behavior at elevated temperatures.
Is the SIR164ADP-T1-GE3 compatible with lead-free reflow soldering processes?
Yes, the SIR164ADP-T1-GE3 is rated for lead-free reflow soldering with a peak temperature of 260 °C, as stated in the Absolute Maximum Ratings section. It is qualified per J-STD-020 and features Pb-free and halogen-free construction. Manual soldering with an iron is not recommended due to its leadless PowerPAK® SO-8 package; reflow profiling per Vishay document 73257 is required for reliable interconnection.
How does the body diode performance of the SIR164ADP-T1-GE3 compare to standard MOSFETs in synchronous rectification?
The SIR164ADP-T1-GE3 features a fast, low-loss body diode with trr = 36 ns (typ.) and Qrr = 24 nC (typ.) at IF = 10 A and dI/dt = 100 A/μs. These values are 30–40 % lower than typical Gen III MOSFETs, reducing reverse recovery loss and associated EMI in synchronous rectifier applications. The SIR164ADP-T1-GE3's optimized body diode enables higher efficiency in hard-switched and quasi-resonant topologies without requiring external Schottky assist diodes.
SIR164ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35.9A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3595 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR164ADP-T1-GE3 FAQ
1.How can I place an order for SIR164ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR164ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR164ADP-T1-GE3 reliable?
The price and inventory of SIR164ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR164ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR164ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR164ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR164ADP-T1-GE3?
SIR164ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR164ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR164ADP-T1-GE3?
For technical support, including SIR164ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR164ADP-T1-GE3 requirements.
6.How does Aetrix verify that SIR164ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR164ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR164ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR164ADP-T1-GE3?
All SIR164ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR164ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR164ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR164ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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