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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR164DP-T1-GE3

Name: SIR164DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR164DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR164DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR164DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 50A PPAK SO-8

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Product details

Overview

SIR164DP-T1-GE3 from Vishay is an N-channel 30 V (D-S) TrenchFET® Gen III power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.5 mΩ at V_GS = 10 V and 3.2 mΩ at V_GS = 4.5 V, with 40.6 nC total gate charge and 50 A continuous drain current at T_C = 25 °C - optimized for high-efficiency DC/DC conversion in notebook CPU core power stages.

For engineers reviewing the SIR164DP-T1-GE3 datasheet, SIR164DP-T1-GE3 pinout, SIR164DP-T1-GE3 application, or SIR164DP-T1-GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V drive, 100 % R_g and UIS tested reliability, thermal performance matching DPAK (R_thJC = 1.2 °C/W), and compatibility with standard SO-8 PCB footprints while enabling higher current density than legacy SO-8 packages.

Technical Context

This MOSFET employs TrenchFET® Gen III silicon technology specifically engineered to reduce ringing in high-frequency switching applications, with verified unclamped inductive switching (UIS) robustness and gate resistance (R_g = 0.2–1.6 Ω) optimized for controlled turn-on/turn-off timing. Its dynamic parameters - C_iss = 3950 pF, C_oss = 740 pF, C_rss = 460 pF - support stable operation in synchronous buck converters operating up to several MHz.

The PowerPAK® SO-8 package features an exposed copper drain pad on the bottom surface, providing a direct low-thermal-resistance path from junction to PCB (R_thJC = 1.2 °C/W typical), and maintains identical pinout and footprint to standard SO-8 - enabling drop-in replacement without layout changes while delivering DPAK-level thermal performance in a smaller, lower-profile form factor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage suitable for 12 V input DC/DC systems with margin against transients
R_DS(on) @ 10 V	2.5 mΩ - enables <1 W conduction loss at 20 A, critical for high-current CPU core rails
R_DS(on) @ 4.5 V	3.2 mΩ - ensures low on-resistance under logic-level gate drive from modern controllers
Q_g typ.	40.6 nC - balances switching speed and gate driver loading in 300–1000 kHz buck converters
I_D cont. @ T_C = 25 °C	50 A - supports high-phase-count multiphase VRMs with minimal parallel devices
R_thJC	1.2 °C/W - matches DPAK thermal capability, allowing >40 W power dissipation with modest heatsinking
Body diode V_SD	0.71 V typ. @ I_S = 3 A - reduces reverse recovery losses during synchronous rectification dead time

Pinout & Package

PowerPAK® SO-8 single-channel leadless package (5.15 mm × 6.15 mm × 1.04 mm), with exposed copper drain pad on bottom surface for enhanced thermal conduction. Compatible with standard SO-8 land patterns and reflow profiles per J-STD-020 (peak 255 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals tied internally - lowers source inductance and improves current sharing in high-di/dt switching
5	Gate (G)	Single gate input with R_g = 0.2–1.6 Ω - enables precise control of dv/dt and EMI in fast-switching topologies
6, 7, 8, Drain Pad	Drain (D)	Eight-terminal drain connection including large bottom-exposed copper pad - minimizes R_DS(on) contribution from package and maximizes heat transfer to PCB

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Reduces switching ringing and EMI without external snubbers, validated across production lots
100 % R_g and UIS tested	Guarantees gate resistance consistency and ruggedness against inductive load transients in VRM applications
PowerPAK® SO-8 package	Delivers DPAK-equivalent R_thJC (1.2 °C/W) in SO-8 footprint - eliminates need for larger packages or complex thermal vias
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for consumer and industrial end equipment
Bottom-side exposed drain	Enables direct thermal coupling to inner-layer copper planes - reduces junction-to-ambient thermal resistance by up to 40 % vs. standard SO-8

Applications

Laptop CPU Core Voltage Regulator	High-Density Server Point-of-Load Converter
Use Scenario: High-current, multi-phase buck converter supplying dynamic 0.8–1.5 V core voltage to Intel/AMD mobile processors under rapid load transients. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET, switching at 300–600 kHz with tight duty cycle control. Use Value: 2.5 mΩ R_DS(on) at 10 V and 3.2 mΩ at 4.5 V minimize conduction loss across full load range, while low Q_g (40.6 nC) enables efficient gate driving with integrated controller outputs.	Use Scenario: Compact 12 V input to 0.9 V/100 A output VRM on server motherboard, constrained by height and thermal envelope. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved multiphase topology, conducting during high-duty-cycle intervals. Use Value: Exposed drain pad and 1.2 °C/W R_thJC allow >40 W dissipation directly into 4-layer PCB, eliminating discrete heatsinks and reducing system height.
Industrial PLC Power Management	USB-C PD Fast Charging DC/DC Stage
Use Scenario: 24 V input DC/DC module powering FPGA, memory, and I/O rails in programmable logic controllers requiring long-term reliability. IC Role / Device Role / Timing Role: Main switch in isolated flyback or non-isolated buck converter operating continuously at 50–80 °C ambient. Use Value: -55 to +150 °C operating temperature range and 100 % UIS testing ensure robustness against bus overvoltage and inductive kickback in noisy factory environments.	Use Scenario: Secondary-side synchronous rectifier in 100 W USB-C PD adapter, where efficiency and thermal management are critical for compact enclosures. IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diodes to reduce forward voltage drop and improve full-load efficiency. Use Value: Body diode V_SD = 0.71 V (typ.) and Q_rr = 22 nC (typ.) minimize reverse recovery loss during hard commutation, increasing efficiency by 0.5–0.8 % at 100 W.

Laptop CPU Core Voltage Regulator

High-Density Server Point-of-Load Converter

Use Scenario: High-current, multi-phase buck converter supplying dynamic 0.8–1.5 V core voltage to Intel/AMD mobile processors under rapid load transients.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET, switching at 300–600 kHz with tight duty cycle control.

Use Value: 2.5 mΩ R_DS(on) at 10 V and 3.2 mΩ at 4.5 V minimize conduction loss across full load range, while low Q_g (40.6 nC) enables efficient gate driving with integrated controller outputs.

Use Scenario: Compact 12 V input to 0.9 V/100 A output VRM on server motherboard, constrained by height and thermal envelope.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved multiphase topology, conducting during high-duty-cycle intervals.

Use Value: Exposed drain pad and 1.2 °C/W R_thJC allow >40 W dissipation directly into 4-layer PCB, eliminating discrete heatsinks and reducing system height.

Industrial PLC Power Management

USB-C PD Fast Charging DC/DC Stage

Use Scenario: 24 V input DC/DC module powering FPGA, memory, and I/O rails in programmable logic controllers requiring long-term reliability.

IC Role / Device Role / Timing Role: Main switch in isolated flyback or non-isolated buck converter operating continuously at 50–80 °C ambient.

Use Value: -55 to +150 °C operating temperature range and 100 % UIS testing ensure robustness against bus overvoltage and inductive kickback in noisy factory environments.

Use Scenario: Secondary-side synchronous rectifier in 100 W USB-C PD adapter, where efficiency and thermal management are critical for compact enclosures.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diodes to reduce forward voltage drop and improve full-load efficiency.

Use Value: Body diode V_SD = 0.71 V (typ.) and Q_rr = 22 nC (typ.) minimize reverse recovery loss during hard commutation, increasing efficiency by 0.5–0.8 % at 100 W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR174DP-T1-GE3	Same PowerPAK SO-8 package; higher R_DS(on) = 3.0 mΩ @ 10 V; lower Q_g = 32.5 nC	Better suited for ultra-high-frequency (>1 MHz) designs where gate drive loss dominates	Select when prioritizing switching loss reduction over conduction loss in light-to-moderate load conditions
IRLHS6342TRPBF	SO-8 package; R_DS(on) = 3.1 mΩ @ 4.5 V; no 100 % UIS test; R_thJC = 2.0 °C/W	Lower thermal performance limits continuous current to ~40 A at same board conditions	Acceptable for cost-sensitive, lower-power applications where thermal headroom is ample

Compared with SIR164DP-T1-GE3, SiR174DP-T1-GE3 trades 20 % higher conduction loss for 20 % lower gate charge - advantageous in high-frequency, low-duty-cycle operation - while IRLHS6342TRPBF offers similar R_DS(on) but lacks UIS validation and delivers 67 % higher junction-to-case thermal resistance, limiting usable power in thermally constrained layouts.

Availability

SIR164DP-T1-GE3 is available at Aetrix Electronics and suitable for laptop CPU core VRMs, high-density server point-of-load converters, and industrial PLC power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for SIR164DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, with leadership in power MOSFETs, diodes, resistors, and capacitors for industrial, automotive, and computing markets.

The SIR164DP-T1-GE3 belongs to Vishay's TrenchFET® Gen III PowerPAK® SO-8 product line, designed specifically to deliver DPAK-level thermal and electrical performance in space-constrained, high-current DC/DC applications such as notebook and server voltage regulation.

FAQ

What is the maximum continuous drain current rating for SIR164DP-T1-GE3 at 70 °C case temperature?

The SIR164DP-T1-GE3 supports 50 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and assumes proper PCB copper area and thermal vias to maintain case temperature at or below 70 °C. The device's 1.2 °C/W R_thJC enables this current level with appropriate board-level heatsinking.

Does SIR164DP-T1-GE3 support logic-level gate drive, and what is its R_DS(on) at 4.5 V?

Yes, SIR164DP-T1-GE3 is fully logic-level compatible, with R_DS(on) = 3.2 mΩ maximum at V_GS = 4.5 V and I_D = 10 A. This specification ensures low on-resistance when driven directly by standard 5 V or 4.5 V PWM controllers or integrated drivers without requiring level-shifting circuitry - a key requirement for modern high-efficiency CPU core VRMs.

Is SIR164DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs, and can it be used on existing SO-8 footprints?

Yes, SIR164DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical pinout, dimensions, and solder pad layout as the standard SO-8. It is designed for direct substitution on existing SO-8 land patterns - though optimal thermal performance requires extending the drain pad copper area per Vishay Application Note AN821 and recommended minimum pads in AN826.

What is the body diode reverse recovery charge (Q_rr) of SIR164DP-T1-GE3, and why does it matter in synchronous rectification?

The SIR164DP-T1-GE3 has Q_rr = 22 nC typical at I_F = 10 A, dI/dt = 100 A/μs, and T_J = 25 °C. In synchronous buck converters, low Q_rr minimizes energy loss and voltage overshoot during the body diode's reverse recovery period - directly improving efficiency and reducing EMI, especially during light-load discontinuous conduction mode (DCM) transitions.

How is thermal performance of SIR164DP-T1-GE3 characterized, and what is its junction-to-case thermal resistance?

SIR164DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance R_thJC of 1.2 °C/W under steady-state conditions, matching DPAK performance. This value is measured with the device mounted on an infinite heat sink and reflects the intrinsic thermal path from die to the exposed drain pad. Real-world PCB thermal performance depends on copper area, layer count, and via design - with documented improvements of up to 40 % over standard SO-8 when using optimized layouts.

SIR164DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 123 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3950 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR164DP-T1-GE3 FAQ

1.How can I place an order for SIR164DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR164DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR164DP-T1-GE3 reliable?

The price and inventory of SIR164DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR164DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR164DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR164DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR164DP-T1-GE3?

SIR164DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR164DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR164DP-T1-GE3?

For technical support, including SIR164DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR164DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR164DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR164DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR164DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR164DP-T1-GE3?

All SIR164DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR164DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR164DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR164DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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