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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR164DP-T1-RE3

Name: SIR164DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR164DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR164DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR164DP-T1-RE3.pdf

Description:: MOSFET N-CH 30V 50A PPAK SO-8

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Product details

Overview

SIR164DP-T1-RE3 from Vishay is an N-channel 30 V (D-S) TrenchFET® Gen III power MOSFET in PowerPAK® SO-8 package, rated for 50 A continuous drain current at TC = 25 °C, with RDS(on) of 2.5 mΩ at VGS = 10 V and 3.2 mΩ at VGS = 4.5 V, optimized for ringing reduction in high-frequency DC/DC converters powering notebook CPU cores.

For engineers reviewing the SIR164DP-T1-RE3 datasheet, SIR164DP-T1-RE3 pinout, SIR164DP-T1-RE3 application, or SIR164DP-T1-RE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 40.6 nC total gate charge, 1.2 °C/W junction-to-case thermal resistance, and compatibility with standard SO-8 land patterns while delivering DPAK-level thermal performance.

Technical Context

This MOSFET employs TrenchFET® Gen III silicon technology to minimize switching losses and parasitic oscillation in synchronous buck converters. Its gate charge profile (Qg = 40.6 nC typ. at VGS = 4.5 V) and low Crss (460 pF) support fast, controlled turn-on/turn-off with reduced Miller-induced shoot-through risk.

The PowerPAK® SO-8 package features an exposed copper drain pad on the bottom side for direct thermal conduction to the PCB, achieving RthJC = 1.2 °C/W (max 1.8 °C/W), enabling high-current operation without external heatsinks when mounted on adequate copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	30 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input DC/DC stages.
RDS(on) max @ VGS = 10 V	2.5 mΩ - Enables <1.25 W conduction loss at 25 A, critical for high-efficiency CPU core supplies.
RDS(on) max @ VGS = 4.5 V	3.2 mΩ - Ensures robust on-state performance with logic-level gate drivers common in notebook VRMs.
Qg typ.	40.6 nC - Low gate charge reduces driver power demand and switching transition time in 300–1000 kHz applications.
ID continuous @ TC = 25 °C	50 A - Confirmed package-limited current rating under heatsink-mounted conditions per datasheet note (e).
RthJC max	1.8 °C/W - Junction-to-case thermal resistance defines maximum allowable power dissipation before exceeding TJ = 150 °C.
Crss	460 pF - Reverse transfer capacitance directly impacts Miller plateau duration and gate drive stability during hard switching.

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with 5 mm × 6.15 mm footprint, identical to standard SO-8 but with exposed drain copper on the bottom side for enhanced thermal conduction. It is RoHS-compliant, lead (Pb)-free, and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectification.
5, 6, 7, 8	Drain (D)	Eight-terminal drain connection integrates into large bottom-side copper pad for minimal thermal resistance and high pulsed current handling (IDM = 70 A).
Gate (G)	Control input	Single gate terminal located at Pin 1 top-side position; requires <1 Ω series resistance to dampen ringing due to low Rg (0.2–1.6 Ω).

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Reduces switching ringing and EMI in high-frequency (>500 kHz) DC/DC converters without snubbers.
100 % Rg and UIS tested	Ensures gate robustness against transient overvoltage and unclamped inductive switching stress in real-world VRM layouts.
PowerPAK® SO-8 package	Delivers DPAK-equivalent thermal performance (RthJC = 1.2 °C/W) in SO-8 footprint, enabling drop-in upgrade from legacy SO-8 MOSFETs.
Low Qgd / Qg ratio	Qgd = 15.4 nC / Qg = 40.6 nC ≈ 38 % - Minimizes Miller effect, improving controllability during turn-off in synchronous buck topologies.
Body diode trr	31 ns typical - Fast reverse recovery supports efficient synchronous rectification and reduces cross-conduction loss.

Applications

Server VRM Phase Legs	Notebook CPU Core Supply
Use Scenario: High-density 48 V to 1 V intermediate bus conversion in dual-phase server VRMs operating at 600 kHz. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved buck stage, handling up to 45 A peak per phase. Use Value: 3.2 mΩ RDS(on) at 4.5 V enables >92 % efficiency at full load; low Crss prevents false turn-on during high dv/dt transitions.	Use Scenario: Compact 19 V input to 1.0–1.3 V output CPU core regulator in ultrabook platforms with strict height constraints. IC Role / Device Role / Timing Role: Low-side synchronous FET in single-phase buck converter, switching at 1 MHz with 30 ns dead-time. Use Value: PowerPAK® SO-8's 1.2 °C/W RthJC allows 50 A continuous current without thermal derating on 2-layer boards with 0.5 in² drain copper.
GPU Power Delivery	Industrial DC/DC Modules
Use Scenario: Multi-phase GPU VRM on discrete graphics cards requiring high peak current (≥60 A) and tight thermal management. IC Role / Device Role / Timing Role: Bottom-side switch in 3-phase buck configuration, driven by integrated PWM controller with adaptive dead-time control. Use Value: 40.6 nC Qg enables clean 10 ns rise/fall times at 10 V drive, minimizing overlap loss and maintaining >94 % efficiency at 500 kHz.	Use Scenario: Isolated 48 V to 12 V DC/DC module for industrial PLC I/O modules with extended temperature range (-40 to +105 °C ambient). IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward topology, operating at 350 kHz with 150 V transient clamping. Use Value: 30 V VDS rating with 100 % UIS testing ensures reliability under repetitive avalanche stress during line transients.

Server VRM Phase Legs

Notebook CPU Core Supply

Use Scenario: High-density 48 V to 1 V intermediate bus conversion in dual-phase server VRMs operating at 600 kHz.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved buck stage, handling up to 45 A peak per phase.

Use Value: 3.2 mΩ RDS(on) at 4.5 V enables >92 % efficiency at full load; low Crss prevents false turn-on during high dv/dt transitions.

Use Scenario: Compact 19 V input to 1.0–1.3 V output CPU core regulator in ultrabook platforms with strict height constraints.

IC Role / Device Role / Timing Role: Low-side synchronous FET in single-phase buck converter, switching at 1 MHz with 30 ns dead-time.

Use Value: PowerPAK® SO-8's 1.2 °C/W RthJC allows 50 A continuous current without thermal derating on 2-layer boards with 0.5 in² drain copper.

GPU Power Delivery

Industrial DC/DC Modules

Use Scenario: Multi-phase GPU VRM on discrete graphics cards requiring high peak current (≥60 A) and tight thermal management.

IC Role / Device Role / Timing Role: Bottom-side switch in 3-phase buck configuration, driven by integrated PWM controller with adaptive dead-time control.

Use Value: 40.6 nC Qg enables clean 10 ns rise/fall times at 10 V drive, minimizing overlap loss and maintaining >94 % efficiency at 500 kHz.

Use Scenario: Isolated 48 V to 12 V DC/DC module for industrial PLC I/O modules with extended temperature range (-40 to +105 °C ambient).

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward topology, operating at 350 kHz with 150 V transient clamping.

Use Value: 30 V VDS rating with 100 % UIS testing ensures reliability under repetitive avalanche stress during line transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR170DP-T1-RE3	Same PowerPAK® SO-8 package, 30 V, but higher RDS(on): 2.8 mΩ @ 10 V and 3.6 mΩ @ 4.5 V; Qg = 44.5 nC.	Slightly lower efficiency at high load; marginally slower switching due to higher Qg and Crss (490 pF).	Acceptable alternative where 0.3 mΩ RDS(on) penalty is tolerable and existing layout uses same footprint.
IRF7478PBF	Standard SO-8 package (not PowerPAK), 30 V, RDS(on) = 3.1 mΩ @ 10 V, RthJC = 16 °C/W, Qg = 32 nC.	Higher thermal resistance limits continuous current to ~22 A at TC = 25 °C; unsuitable for sustained 50 A operation.	Only viable for low-power or thermally relaxed designs; not a thermal or current-capability substitute.

Compared with SiR170DP-T1-RE3, SIR164DP-T1-RE3 delivers lower conduction loss and faster switching; versus IRF7478PBF, it provides 13× better thermal resistance and 2.3× higher current capability in the same board area-making it essential for space-constrained, high-current VRMs.

Availability

SIR164DP-T1-RE3 is available at Aetrix Electronics and suitable for notebook CPU core supplies, server VRM phase legs, and industrial DC/DC modules requiring stable component supply, long-term production continuity, and verified thermal performance under high ambient temperatures.

Supply support for SIR164DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, specializing in high-reliability power management solutions for computing, industrial, and automotive markets.

The SIR164DP-T1-RE3 belongs to Vishay's TrenchFET® Gen III PowerPAK® SO-8 MOSFET product line, engineered specifically for high-efficiency, high-current synchronous buck converters in space-constrained computing power delivery systems.

FAQ

What is the maximum continuous drain current rating for SIR164DP-T1-RE3 under standard PCB mounting conditions?

The SIR164DP-T1-RE3 is rated for 33.3 A continuous drain current at TA = 25 °C on a 1" × 1" FR4 board (note b), and 26.5 A at TA = 70 °C. These values reflect thermal limitations of the PCB environment-not the package limit. The 50 A rating applies only under case temperature-controlled conditions (TC = 25 °C) with heatsinking, as specified in the Absolute Maximum Ratings table.

Does SIR164DP-T1-RE3 support 4.5 V gate drive in synchronous buck applications?

Yes, SIR164DP-T1-RE3 is fully characterized for 4.5 V gate drive: RDS(on) is guaranteed ≤3.2 mΩ at ID = 10 A and VGS = 4.5 V, and total gate charge is 40.6 nC typ. This makes it compatible with standard 5 V logic-level PWM controllers used in notebook and server VRMs without requiring level-shifting circuitry.

How does the PowerPAK® SO-8 package of SIR164DP-T1-RE3 improve thermal performance compared to standard SO-8 MOSFETs?

The PowerPAK® SO-8 package of SIR164DP-T1-RE3 achieves RthJC = 1.2 °C/W (vs. ~16 °C/W for standard SO-8), due to its exposed copper drain pad directly bonded to PCB copper. This allows SIR164DP-T1-RE3 to dissipate 69 W at TC = 25 °C-enabling 50 A operation with minimal board-level thermal design overhead.

Is SIR164DP-T1-RE3 suitable for avalanche-rated applications such as active-clamp forward converters?

Yes, SIR164DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested with single-pulse avalanche energy EAS = 80 mJ and peak current IAS = 40 A (L = 0.1 mH). This qualifies it for controlled avalanche operation in topologies like active-clamp forward, provided layout minimizes stray inductance and gate drive remains stable during recovery.

What is the body diode reverse recovery time (trr) of SIR164DP-T1-RE3, and why does it matter in synchronous rectification?

The body diode trr of SIR164DP-T1-RE3 is 31 ns typ. (60 ns max) at IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C. This fast recovery minimizes reverse recovery charge (Qrr = 22 nC typ.), reducing cross-conduction loss and EMI during the dead-time interval in synchronous buck converters-directly improving light-load efficiency and thermal behavior.

SIR164DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen III

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 123 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3950 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR164DP-T1-RE3 FAQ

1.How can I place an order for SIR164DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR164DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR164DP-T1-RE3 reliable?

The price and inventory of SIR164DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR164DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR164DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR164DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR164DP-T1-RE3?

SIR164DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR164DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR164DP-T1-RE3?

For technical support, including SIR164DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR164DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR164DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR164DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR164DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR164DP-T1-RE3?

All SIR164DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR164DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR164DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR164DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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