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Vishay Siliconix SIR166DP-T1-GE3
- Part No.:
- SIR166DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR166DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,380
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Product details
Overview
SIR166DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 3.2 mΩ at VGS = 10 V and 4.0 mΩ at VGS = 4.5 V, used as low-side switch in notebook PC core VRM and POL applications.
For engineers reviewing the SIR166DP-T1-GE3 datasheet, SIR166DP-T1-GE3 pinout, SIR166DP-T1-GE3 application, or SIR166DP-T1-GE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.1 °C/W), gate charge (Qg = 25 nC typ. at 4.5 V), body diode recovery (trr = 27 ns), avalanche energy rating (EAS = 80 mJ), and PowerPAK SO-8 land pattern compatibility with standard SO-8 footprints.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage switching in synchronous buck converters. Its single-channel configuration supports unidirectional power flow with integrated body diode, and its 100 % Rg and UIS testing ensures gate robustness and avalanche reliability under transient stress.
The PowerPAK SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to PCB copper, delivering junction-to-case thermal resistance of 2.1 °C/W - matching DPAK performance while retaining SO-8 footprint compatibility. It operates across -55 °C to +150 °C junction temperature range with ±20 V gate-source voltage rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 3.3 V/5 V input rail applications |
| RDS(on) @ 10 V | 3.2 mΩ max - Enables <1 W conduction loss at 20 A in VRM low-side position |
| RDS(on) @ 4.5 V | 4.0 mΩ max - Supports efficient operation with 5 V gate drive in POL converters |
| Qg | 25 nC typ. @ 4.5 V - Low gate charge reduces driver power and switching losses at 500 kHz–1 MHz |
| ID (TC = 25 °C) | 40 A continuous - Sustains high-current load transients in CPU core power stages |
| EAS | 80 mJ - Rated single-pulse avalanche energy for reliable operation during inductive turn-off |
| RthJC | 2.1 °C/W - Enables direct thermal path to PCB copper, matching DPAK-level cooling without larger footprint |
Pinout & Package
PowerPAK® SO-8 single-channel leadless package: 6.15 mm × 5.15 mm footprint, 1.04 mm nominal height, exposed drain pad on bottom side for thermal conduction. Compatible with standard SO-8 land patterns; no PCB redesign required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain | Eight-terminal drain connection with bottom-exposed copper pad for low-impedance thermal and current path |
| G (Pin 1 top view) | Gate | Single gate terminal located adjacent to source for minimized gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 3.2 mΩ RDS(on) at 30 V in SO-8 footprint - 40 % lower on-resistance than conventional SO-8 MOSFETs |
| 100 % Rg tested | Guarantees gate resistance ≤1.5 Ω - ensures consistent turn-on timing and prevents oscillation in paralleled configurations |
| 100 % UIS tested | Validates 80 mJ avalanche capability per pulse - eliminates need for external snubbers in VRM inductor flyback events |
| PowerPAK SO-8 thermal design | 2.1 °C/W RthJC enables 40 A operation with only 84 °C junction rise at 25 °C ambient - no heatsink required |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for consumer and industrial end equipment |
Applications
| Notebook PC Core VRM | Point-of-Load Converter |
|---|---|
Use Scenario: High-efficiency synchronous buck stage supplying CPU core voltage (0.8–1.5 V) with up to 40 A peak current. IC Role / Device Role: Low-side power switch handling freewheeling current and conducting majority of output current. Use Value: 4.0 mΩ RDS(on) at 4.5 V gate drive minimizes conduction loss below 1.6 W at 25 A, enabling >95 % efficiency at full load. |
Use Scenario: Compact DC-DC regulator on motherboard or GPU module delivering stable 1.0–3.3 V to ASICs or memory. IC Role / Device Role: Primary low-side MOSFET in 500 kHz–1 MHz switching cell with tight layout constraints. Use Value: 25 nC Qg at 4.5 V allows use of low-power gate drivers (e.g., Si823Hx), reducing driver BOM cost and board space. |
| Server Voltage Regulator | Industrial Motor Control Driver |
Use Scenario: Multi-phase VRM for Xeon or EPYC processors requiring high current density and thermal headroom. IC Role / Device Role: One phase's low-side switch operating in parallel with identical devices for current sharing. Use Value: 100 % UIS testing ensures robustness against phase current imbalance and inductive kickback during fault conditions. |
Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver supporting fan, pump, or actuator control. IC Role / Device Role: Low-side switch managing PWM-controlled current return path with fast body diode recovery. Use Value: 27 ns trr and 18 nC Qrr minimize reverse recovery losses and EMI during commutation at 20 kHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR176DP-T1-GE3 | RDS(on) = 2.8 mΩ @ 10 V (0.4 mΩ lower); Qg = 28 nC @ 4.5 V (3 nC higher); same PowerPAK SO-8 package | Better conduction loss at high current; slightly higher switching loss due to increased Qg | Select when minimizing I²R loss dominates over gate drive power in high-duty-cycle POL designs |
| IRLHS6342TRPBF | RDS(on) = 3.5 mΩ @ 4.5 V (0.5 mΩ higher); Qg = 22 nC @ 4.5 V (3 nC lower); PQFN 3.3 × 3.3 mm package | Smaller footprint but lower current rating (30 A vs. 40 A); reduced thermal mass limits sustained power | Select when board area is constrained and peak current remains ≤30 A with adequate copper cooling |
Compared with SiR176DP-T1-GE3, SIR166DP-T1-GE3 trades 0.4 mΩ higher RDS(on) for 3 nC lower Qg - favoring high-frequency, medium-current POL use. Against IRLHS6342TRPBF, it delivers 10 A higher ID and 2.1 °C/W lower RthJC - critical for thermally dense VRM phases where junction temperature must stay below 125 °C.
Availability
SIR166DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC core VRM, point-of-load converter, and server voltage regulator applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for SIR166DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR166DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, low-voltage synchronous buck converters in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SIR166DP-T1-GE3 at 70 °C case temperature?
The SIR166DP-T1-GE3 is rated for 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and assumes proper PCB copper area for heat dissipation. The device maintains 40 A at both TC = 25 °C and TC = 70 °C due to its PowerPAK SO-8 thermal architecture, unlike many SO-8 MOSFETs that derate significantly above 25 °C.
Does SIR166DP-T1-GE3 support 5 V gate drive in synchronous rectification applications?
Yes, SIR166DP-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 4.0 mΩ max at VGS = 4.5 V and ID = 10 A. Its gate threshold voltage (VGS(th)) ranges from 1.2 V to 2.2 V, ensuring strong enhancement-mode turn-on with standard 5 V logic-level drivers. The low Qg (25 nC typ. at 4.5 V) further supports efficient operation in 5 V-driven POL and VRM circuits.
What is the thermal resistance from junction to ambient (RthJA) for SIR166DP-T1-GE3 on a standard FR4 board?
For SIR166DP-T1-GE3 mounted on a 1" × 1" FR4 board, RthJA is 20 °C/W typical and 25 °C/W maximum (t ≤ 10 s). This value assumes surface-mount conditions per Vishay's test note b. With optimized PCB copper (e.g., 0.5 in² spreading copper), RthJA can be reduced to ~12–15 °C/W - critical for maintaining TJ < 125 °C in high-power notebook VRMs.
Is SIR166DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SIR166DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 6.15 mm × 5.15 mm footprint and pinout as standard SO-8 - pins 1–4 are source, pin 5–8 are drain, and gate is at pin 1 top view. It mounts directly to existing SO-8 land patterns without PCB modification, though optimal thermal performance requires extended drain copper area per Vishay Application Note AN821.
What is the body diode reverse recovery time (trr) of SIR166DP-T1-GE3, and why does it matter?
The body diode reverse recovery time (trr) of SIR166DP-T1-GE3 is 27 ns typical at IF = 10 A, di/dt = 100 A/μs, and TJ = 25 °C. This fast recovery minimizes switching loss and voltage overshoot during synchronous rectification transitions, especially in high-frequency (>500 kHz) VRM applications where slow diode recovery causes shoot-through risk and EMI.
SIR166DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3340 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR166DP-T1-GE3 FAQ
1.How can I place an order for SIR166DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR166DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR166DP-T1-GE3 reliable?
The price and inventory of SIR166DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR166DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR166DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR166DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR166DP-T1-GE3?
SIR166DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR166DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR166DP-T1-GE3?
For technical support, including SIR166DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR166DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR166DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR166DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR166DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR166DP-T1-GE3?
All SIR166DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR166DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR166DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR166DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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