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Vishay Siliconix SIR172ADP-T1-GE3
- Part No.:
- SIR172ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR172ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 24A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,157
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Product details
Overview
SIR172ADP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in notebook CPU core power stages. It delivers RDS(on) of 8.5 mΩ at VGS = 10 V, 24 A continuous drain current at TC = 25 °C, and 12.8 nC total gate charge - enabling high-efficiency, space-constrained DC/DC conversion.
For engineers reviewing the SIR172ADP-T1-GE3 datasheet, SIR172ADP-T1-GE3 pinout, SIR172ADP-T1-GE3 application, or SIR172ADP-T1-GE3 equivalent, this page provides verified thermal resistance values (RthJC = 3.5 °C/W), body diode recovery metrics (trr = 15–30 ns), and PowerPAK SO-8 footprint compatibility with standard SO-8 land patterns - critical for notebook VRM layout validation and thermal derating analysis.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (VGS(th) = 1.2–2.4 V) supports 4.5 V logic-level drive, while its 142 pF reverse transfer capacitance (Crss) and 202 pF output capacitance (Coss) enable stable high-frequency synchronous rectification up to 1 MHz.
The PowerPAK SO-8 package features an exposed copper drain pad on the bottom surface, delivering a junction-to-case thermal resistance of 3.5 °C/W (typical) and enabling direct thermal coupling to PCB copper. Its 1.07 mm profile and 6.15 mm × 5.15 mm footprint match standard SO-8 layouts, allowing drop-in replacement without board redesign.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for notebook CPU core rail (≤3.3 V output, 5 V input stage). |
| RDS(on) @ VGS = 10 V | 8.5 mΩ max - Enables ≤200 mW conduction loss at 24 A, critical for high-current VRM efficiency. |
| ID (continuous, TC = 25 °C) | 24 A - Supports full-load operation in dual-phase notebook CPU power stages without forced airflow. |
| Qg (typ.) | 12.8 nC @ VGS = 4.5 V - Low gate charge reduces driver power loss and enables efficient 500 kHz–1 MHz switching. |
| trr (body diode) | 15–30 ns - Fast reverse recovery minimizes shoot-through risk and dead-time losses in synchronous buck converters. |
| RthJC | 3.5 °C/W (typ.) - Thermal path from junction to exposed drain pad allows direct PCB heat spreading, matching DPAK performance. |
| VGS(th) | 1.2–2.4 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers in high-side configurations. |
Pinout & Package
PowerPAK® SO-8 is a leadless, surface-mount package with 1.07 mm height, 6.15 mm × 5.15 mm footprint, and exposed copper drain pad on the bottom. It shares identical pinout and land pattern with standard SO-8, enabling direct PCB layout reuse.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to exposed bottom copper pad - primary thermal and current path to PCB. |
| 5 | Gate (G) | Control terminal; low 0.2–2.4 Ω gate resistance enables fast, low-loss switching with minimal external gate resistor. |
| 6, 7, 8 | Source (S) | Three parallel source terminals tied to internal source metallization - forms return path for high-current synchronous rectification. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers 8.5 mΩ RDS(on) at 10 V in SO-8 footprint - 40 % lower on-resistance than comparable planar MOSFETs. |
| Optimized for high-side synchronous rectifier operation | Low Qgd/Qg ratio (4.1/12.8 nC) ensures clean turn-off and reduced Miller-induced shoot-through in buck high-side position. |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| Lead (Pb)-free and halogen-free construction | Meets RoHS Directive 2011/65/EU and JEDEC JS709B - compliant for global notebook OEM production. |
| PowerPAK® SO-8 thermal architecture | Exposes drain pad directly to PCB - achieves 3.5 °C/W RthJC, matching DPAK thermal performance in SO-8 area. |
Applications
| Notebook CPU Core VRM | High-Density Point-of-Load Converter |
|---|---|
Use Scenario: Primary high-side switch in dual-phase 1–2 V, 30–60 A CPU core power supply on ultra-thin notebook motherboards. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with 3.3 V or 5 V gate drive. Use Value: 8.5 mΩ RDS(on) and 12.8 nC Qg reduce conduction and switching losses by ≥15 % vs. legacy SO-8 MOSFETs, extending battery runtime. | Use Scenario: Compact 12 V input to 1.8 V output converter powering FPGA or ASIC in space-constrained industrial edge modules. IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology where thermal density exceeds 1 W/mm². Use Value: PowerPAK SO-8's 3.5 °C/W RthJC enables >20 A continuous current without heatsink, reducing system BOM cost and footprint. |
| Server Memory Regulator | USB-C PD Fast-Charge Controller |
Use Scenario: 1.2 V DDR5 memory rail regulator requiring high efficiency at light-to-moderate loads in 1U server blades. IC Role / Device Role / Timing Role: High-side MOSFET in multiphase buck converter with adaptive phase shedding. Use Value: Fast 15–30 ns body diode trr minimizes reverse recovery loss during discontinuous conduction mode transitions. | Use Scenario: High-efficiency 20 V input to 5–9 V programmable output stage in portable USB-C PD adapters. IC Role / Device Role / Timing Role: High-side switch in secondary-side synchronous rectification circuit. Use Value: 1.2–2.4 V VGS(th) ensures full enhancement with 3.3 V microcontroller gate drive, eliminating level-shifter complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR178DP-T1-GE3 | RDS(on) = 6.0 mΩ @ 10 V (lower), Qg = 15.2 nC (higher), same PowerPAK SO-8 package. | Better conduction loss but higher gate drive requirement; suited for fixed-frequency >600 kHz designs. | Select SiR178DP-T1-GE3 only if RDS(on) reduction outweighs increased gate drive loss and cost premium. |
| IRF7478PBF | Standard SO-8 package, RDS(on) = 10.5 mΩ @ 10 V, RthJA = 62 °C/W (vs. 27 °C/W for SIR172ADP-T1-GE3). | Higher thermal resistance limits current capability in thermally constrained notebooks. | IRF7478PBF is viable only in non-space-constrained, low-power applications where PCB copper area is abundant. |
Compared with SiR178DP-T1-GE3 and IRF7478PBF, the SIR172ADP-T1-GE3 offers optimal balance of low RDS(on), moderate Qg, and industry-leading thermal performance in SO-8 footprint - making it the preferred choice for high-current, thermally dense notebook CPU core VRMs.
Availability
SIR172ADP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, high-density point-of-load converters, and USB-C PD fast-charge controllers requiring stable component supply, RoHS-compliant sourcing, and consistent PowerPAK SO-8 mechanical form factor.
Supply support for SIR172ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIR172ADP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 product line, engineered specifically for high-efficiency, high-current synchronous rectification in space- and thermally constrained computing and portable power applications.
FAQ
What is the maximum continuous drain current rating for SIR172ADP-T1-GE3 at 70 °C case temperature?
The SIR172ADP-T1-GE3 supports 24 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and applies under steady-state conditions with adequate PCB copper thermal spreading. Derating begins above 70 °C case temperature per the Power Derating curve in the datasheet.
Does SIR172ADP-T1-GE3 require a heatsink when operating at 24 A continuous current?
No, the SIR172ADP-T1-GE3 does not require an external heatsink when operating at 24 A continuous current, provided the PCB implements ≥1 in² of 2 oz copper on the drain pad layer. Its 3.5 °C/W RthJC and exposed drain pad enable sufficient heat transfer to the board, achieving junction temperatures within 150 °C limit under typical notebook VRM thermal conditions.
Is SIR172ADP-T1-GE3 compatible with standard SO-8 solder reflow profiles?
Yes, SIR172ADP-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature of 255 °C for 30 s. The recommended profile matches standard SO-8 requirements, including ramp-up ≤3 °C/s, time above 217 °C of 60–150 s, and no manual soldering - as detailed in Vishay document 73257.
What is the body diode forward voltage of SIR172ADP-T1-GE3 at 5 A source current?
The body diode forward voltage (VSD) of SIR172ADP-T1-GE3 is 0.75–1.1 V at IS = 5 A and TJ = 25 °C, as specified in the Drain-Source Body Diode Characteristics section. This low VSD minimizes conduction loss during synchronous rectifier dead-time intervals.
Can SIR172ADP-T1-GE3 be used as a low-side switch in a synchronous buck converter?
Yes, SIR172ADP-T1-GE3 can be used as a low-side switch, though it is optimized for high-side synchronous rectifier operation. Its 1.2–2.4 V VGS(th), 8.5 mΩ RDS(on), and fast 15–30 ns trr ensure robust low-side performance; however, gate drive must accommodate negative voltage swing relative to source in high-side referenced configurations.
SIR172ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1515 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 29.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR172ADP-T1-GE3 FAQ
1.How can I place an order for SIR172ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR172ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR172ADP-T1-GE3 reliable?
The price and inventory of SIR172ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR172ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR172ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR172ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR172ADP-T1-GE3?
SIR172ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR172ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR172ADP-T1-GE3?
For technical support, including SIR172ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR172ADP-T1-GE3 requirements.
6.How does Aetrix verify that SIR172ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR172ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR172ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR172ADP-T1-GE3?
All SIR172ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR172ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR172ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR172ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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